JP5141020B2 - 多結晶シリコンの鋳造方法 - Google Patents

多結晶シリコンの鋳造方法 Download PDF

Info

Publication number: JP5141020B2
Authority: JP; Japan
Prior art keywords: ingot; silicon; molten silicon; casting method; induction coil
Prior art date: 2007-01-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

JP2007006762A

Other languages

English (en)

Japanese (ja)

Other versions

JP2008174397A (ja

Inventor

賢一笹谷

敬太中川

智弘鬼塚

信之久保

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sumco Corp

Original Assignee

Sumco Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2007-01-16

Filing date

2007-01-16

Publication date

2013-02-13

2007-01-16 Application filed by Sumco Corp filed Critical Sumco Corp

2007-01-16 Priority to JP2007006762A priority Critical patent/JP5141020B2/ja

2008-01-14 Priority to EP08000576A priority patent/EP1947221A3/de

2008-01-14 Priority to US12/007,651 priority patent/US20080210156A1/en

2008-07-31 Publication of JP2008174397A publication Critical patent/JP2008174397A/ja

2013-02-13 Application granted granted Critical

2013-02-13 Publication of JP5141020B2 publication Critical patent/JP5141020B2/ja

Status Expired - Fee Related legal-status Critical Current

2027-01-16 Anticipated expiration legal-status Critical

Links

238000005266 casting Methods 0.000 title claims description 75
238000000034 method Methods 0.000 title claims description 67
229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 28
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 103
229910052710 silicon Inorganic materials 0.000 claims description 103
239000010703 silicon Substances 0.000 claims description 103
238000001816 cooling Methods 0.000 claims description 53
230000006698 induction Effects 0.000 claims description 41
239000000758 substrate Substances 0.000 claims description 15
230000005674 electromagnetic induction Effects 0.000 claims description 5
238000009749 continuous casting Methods 0.000 claims description 4
238000010438 heat treatment Methods 0.000 claims description 3
239000000155 melt Substances 0.000 claims 1
238000003756 stirring Methods 0.000 description 29
239000013078 crystal Substances 0.000 description 24
238000006243 chemical reaction Methods 0.000 description 20
238000007711 solidification Methods 0.000 description 14
230000008023 solidification Effects 0.000 description 14
238000004519 manufacturing process Methods 0.000 description 10
230000002500 effect on skin Effects 0.000 description 9
239000002210 silicon-based material Substances 0.000 description 9
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
239000000463 material Substances 0.000 description 7
238000002844 melting Methods 0.000 description 6
230000008018 melting Effects 0.000 description 6
239000004065 semiconductor Substances 0.000 description 6
230000000052 comparative effect Effects 0.000 description 5
230000003111 delayed effect Effects 0.000 description 5
239000002245 particle Substances 0.000 description 5
239000002994 raw material Substances 0.000 description 5
238000005520 cutting process Methods 0.000 description 4
230000006866 deterioration Effects 0.000 description 4
238000010586 diagram Methods 0.000 description 4
229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
230000008901 benefit Effects 0.000 description 3
229910003460 diamond Inorganic materials 0.000 description 3
239000010432 diamond Substances 0.000 description 3
230000000694 effects Effects 0.000 description 3
239000007789 gas Substances 0.000 description 3
229910002804 graphite Inorganic materials 0.000 description 3
239000010439 graphite Substances 0.000 description 3
238000007665 sagging Methods 0.000 description 3
239000004020 conductor Substances 0.000 description 2
238000011109 contamination Methods 0.000 description 2
238000002425 crystallisation Methods 0.000 description 2
230000008025 crystallization Effects 0.000 description 2
230000007547 defect Effects 0.000 description 2
230000020169 heat generation Effects 0.000 description 2
239000012535 impurity Substances 0.000 description 2
239000011261 inert gas Substances 0.000 description 2
239000007788 liquid Substances 0.000 description 2
238000003760 magnetic stirring Methods 0.000 description 2
230000002093 peripheral effect Effects 0.000 description 2
230000001737 promoting effect Effects 0.000 description 2
239000010453 quartz Substances 0.000 description 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
238000005054 agglomeration Methods 0.000 description 1
230000002776 aggregation Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
229910052796 boron Inorganic materials 0.000 description 1
230000008859 change Effects 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
238000009826 distribution Methods 0.000 description 1
230000004927 fusion Effects 0.000 description 1
230000003993 interaction Effects 0.000 description 1
238000005259 measurement Methods 0.000 description 1
239000002184 metal Substances 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000006082 mold release agent Substances 0.000 description 1
230000035699 permeability Effects 0.000 description 1
230000002040 relaxant effect Effects 0.000 description 1
238000004904 shortening Methods 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/001—Continuous growth
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Silicon Compounds (AREA)
Continuous Casting (AREA)

JP2007006762A 2007-01-16 2007-01-16 多結晶シリコンの鋳造方法 Expired - Fee Related JP5141020B2 (ja)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
JP2007006762A JP5141020B2 (ja)	2007-01-16	2007-01-16	多結晶シリコンの鋳造方法
EP08000576A EP1947221A3 (de)	2007-01-16	2008-01-14	Gussverfahren für Polykristallinsilizium
US12/007,651 US20080210156A1 (en)	2007-01-16	2008-01-14	Casting method for polycrystalline silicon

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2007006762A JP5141020B2 (ja)	2007-01-16	2007-01-16	多結晶シリコンの鋳造方法

Publications (2)

Publication Number	Publication Date
JP2008174397A JP2008174397A (ja)	2008-07-31
JP5141020B2 true JP5141020B2 (ja)	2013-02-13

Family

ID=39400921

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2007006762A Expired - Fee Related JP5141020B2 (ja)	2007-01-16	2007-01-16	多結晶シリコンの鋳造方法

Country Status (3)

Country	Link
US (1)	US20080210156A1 (de)
EP (1)	EP1947221A3 (de)
JP (1)	JP5141020B2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2008156166A (ja) *	2006-12-25	2008-07-10	Sumco Solar Corp	シリコンインゴットの鋳造方法および切断方法
US20100047148A1 (en) *	2008-05-23	2010-02-25	Rec Silicon, Inc.	Skull reactor
US20090289390A1 (en) *	2008-05-23	2009-11-26	Rec Silicon, Inc.	Direct silicon or reactive metal casting
US20100148403A1 (en) *	2008-12-16	2010-06-17	Bp Corporation North America Inc.	Systems and Methods For Manufacturing Cast Silicon
UA94784C2 (uk) *	2009-07-20	2011-06-10	Частное Акционерное Общество «Пиллар»	Пристрій для одержання зливків мультикристалічного кремнію індукційним методом
AU2009355442A1 (en)	2009-11-20	2012-05-31	Consarc Corporation	Electromagnetic casting apparatus for silicon
WO2011077556A1 (ja) *	2009-12-25	2011-06-30	Kaneko Kyojiro	シリコン電磁鋳造装置
CN101830465B (zh) *	2010-05-26	2012-12-19	丽达科技有限公司	硅电磁铸造装置
JP2012020891A (ja) *	2010-07-13	2012-02-02	Sumco Corp	多結晶シリコンの鋳造方法
JP2012036056A (ja) *	2010-08-11	2012-02-23	Sumco Corp	シリコンの電磁鋳造装置
JP2012036059A (ja) *	2010-08-11	2012-02-23	Sumco Corp	シリコンの電磁鋳造装置
JP2012041209A (ja) *	2010-08-16	2012-03-01	Sumco Corp	シリコンの電磁鋳造装置
JP2012166979A (ja) *	2011-02-14	2012-09-06	Sumco Corp	多結晶シリコンの電磁鋳造方法および電磁鋳造装置
JP2012171821A (ja) *	2011-02-18	2012-09-10	Sumco Corp	多結晶ウェーハ及びその製造方法、並びに多結晶材料の鋳造方法
CN104169475B (zh)	2012-03-26	2018-01-12	胜高股份有限公司	多晶硅及其铸造方法
KR101479310B1 (ko)	2013-01-31	2015-01-06	한국에너지기술연구원	나노입자 포집장치
TWI626339B (zh) *	2016-12-23	2018-06-11	Nat Chung Shan Inst Science & Tech	Vacuum refining furnace device combining electron beam and region melting
CN113584586B (zh) *	2021-08-06	2024-04-26	宁夏红日东升新能源材料有限公司	一种多晶硅离心定向凝固提纯方法与装置
CN114561697A (zh) *	2022-03-02	2022-05-31	宁夏高创特能源科技有限公司	细小柱状晶硅靶材基体的铸锭制备方法及其制备设备

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR2609655B1 (fr)	1987-01-15	1989-03-24	Cezus Co Europ Zirconium	Dispositif de fusion et coulee continue de metaux, son procede de mise en oeuvre et son utilisation
DE68913237T2 (de) *	1988-07-05	1994-09-29	Osaka Titanium	Siliciumgiessvorrichtung.
DE69120326T2 (de) *	1990-03-30	1996-12-12	Sumitomo Sitix Corp	Verfahren zur Herstellung eines Siliziumeinkristalles
JP2000264775A (ja) *	1999-03-23	2000-09-26	Sumitomo Sitix Amagasaki:Kk	電磁誘導鋳造装置
EP1254861B1 (de) *	2000-12-28	2008-01-30	Sumco Corporation	Kontinuierliches giessverfahren für silizium
US8021483B2 (en) *	2002-02-20	2011-09-20	Hemlock Semiconductor Corporation	Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
WO2006088037A1 (ja) *	2005-02-17	2006-08-24	Sumco Solar Corporation	シリコン鋳造装置およびシリコン基板の製造方法
JP2007051026A (ja) *	2005-08-18	2007-03-01	Sumco Solar Corp	シリコン多結晶の鋳造方法
JP5040521B2 (ja) *	2007-08-17	2012-10-03	株式会社Ｓｕｍｃｏ	シリコン鋳造装置

2007
- 2007-01-16 JP JP2007006762A patent/JP5141020B2/ja not_active Expired - Fee Related
2008
- 2008-01-14 EP EP08000576A patent/EP1947221A3/de not_active Withdrawn
- 2008-01-14 US US12/007,651 patent/US20080210156A1/en not_active Abandoned

Also Published As

Publication number	Publication date
US20080210156A1 (en)	2008-09-04
EP1947221A3 (de)	2010-04-07
EP1947221A2 (de)	2008-07-23
JP2008174397A (ja)	2008-07-31

Legal Events

Date	Code	Title	Description
2010-01-09	A621	Written request for application examination	Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100108
2011-10-28	A977	Report on retrieval	Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111028
2011-11-22	A131	Notification of reasons for refusal	Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111122
2012-01-14	A521	Written amendment	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120113
2012-02-18	A521	Written amendment	Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120217
2012-03-23	A711	Notification of change in applicant	Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20120322
2012-10-16	TRDD	Decision of grant or rejection written
2012-10-24	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121023
2012-10-25	A01	Written decision to grant a patent or to grant a registration (utility model)	Free format text: JAPANESE INTERMEDIATE CODE: A01
2012-11-29	A61	First payment of annual fees (during grant procedure)	Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121105
2012-11-30	FPAY	Renewal fee payment (event date is renewal date of database)	Free format text: PAYMENT UNTIL: 20151130 Year of fee payment: 3
2012-11-30	R150	Certificate of patent or registration of utility model	Free format text: JAPANESE INTERMEDIATE CODE: R150
2015-11-30	LAPS	Cancellation because of no payment of annual fees

Publication	Publication Date	Title
JP2008174397A (ja)	2008-07-31	多結晶シリコンの鋳造方法
JP3573045B2 (ja)	2004-10-06	高品質シリコン単結晶の製造方法
US20090044926A1 (en)	2009-02-19	Silicon casting apparatus
JP2021107325A (ja)	2021-07-29	ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
JP7495448B2 (ja)	2024-06-04	鋳造法で酸化ガリウム単結晶を成長させる方法
JP2008156166A (ja)	2008-07-10	シリコンインゴットの鋳造方法および切断方法
JP5163386B2 (ja)	2013-03-13	シリコン融液形成装置
TW201404956A (zh)	2014-02-01	用於生產錠料的設備和方法
JP6121422B2 (ja)	2017-04-26	方向性凝固によって結晶性材料を作製するための、追加の側方熱源が備わったシステム
TWI796517B (zh)	2023-03-21	單晶矽鑄碇及其製造方法
JP2657240B2 (ja)	1997-09-24	シリコン鋳造装置
JP3533812B2 (ja)	2004-05-31	チョクラルスキー法による結晶製造装置、結晶製造方法、およびこの方法から製造される結晶
JP5861770B2 (ja)	2016-02-16	多結晶シリコンおよびその鋳造方法
EP1742277A2 (de)	2007-01-10	Polykristallines Silizium für Solarzellen sowie Verfahren zur Herstellung desselben
JP5201446B2 (ja)	2013-06-05	ターゲット材およびその製造方法
JP4664967B2 (ja)	2011-04-06	シリコン鋳造装置およびシリコン基板の製造方法
JP2004284892A (ja)	2004-10-14	多結晶シリコンの製造方法
WO2012111850A1 (ja)	2012-08-23	多結晶ウェーハ及びその製造方法、並びに多結晶材料の鋳造方法
JP5051044B2 (ja)	2012-10-17	シリコン単結晶の育成方法
JP2006273628A (ja)	2006-10-12	多結晶シリコンインゴットの製造方法
JP2012041211A (ja)	2012-03-01	多結晶シリコンウェーハ及びその鋳造方法
JP2013112539A (ja)	2013-06-10	シリコンインゴットの連続鋳造方法
JP5500138B2 (ja)	2014-05-21	炭素ドープシリコン単結晶の製造方法
JP2005324993A (ja)	2005-11-24	単結晶の製造装置
JPH0259494A (ja)	1990-02-28	シリコン単結晶の製造方法及び装置