JP5243699B2 - 試料のエッジ検査のためのシステム及び方法 - Google Patents

試料のエッジ検査のためのシステム及び方法 Download PDF

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Publication number
JP5243699B2
JP5243699B2 JP2006156327A JP2006156327A JP5243699B2 JP 5243699 B2 JP5243699 B2 JP 5243699B2 JP 2006156327 A JP2006156327 A JP 2006156327A JP 2006156327 A JP2006156327 A JP 2006156327A JP 5243699 B2 JP5243699 B2 JP 5243699B2
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Japan
Prior art keywords
edge
sample
light
wafer
inspection
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Expired - Fee Related
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JP2006156327A
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Japanese (ja)
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JP2006343331A (ja
JP2006343331A5 (2
Inventor
カート・リンドセイ・ヘラー
スティーブ・ウィフェン・クイ
ジャレッド・レラ
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KLA Corp
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KLA Corp
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Publication of JP2006343331A5 publication Critical patent/JP2006343331A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G01N21/9503—Wafer edge inspection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G01N2021/8822—Dark field detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95623—Inspecting patterns on the surface of objects using a spatial filtering method

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2006156327A 2005-06-06 2006-06-05 試料のエッジ検査のためのシステム及び方法 Expired - Fee Related JP5243699B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/145,874 2005-06-06
US11/145,874 US7728965B2 (en) 2005-06-06 2005-06-06 Systems and methods for inspecting an edge of a specimen

Publications (3)

Publication Number Publication Date
JP2006343331A JP2006343331A (ja) 2006-12-21
JP2006343331A5 JP2006343331A5 (2) 2009-07-16
JP5243699B2 true JP5243699B2 (ja) 2013-07-24

Family

ID=37493791

Family Applications (1)

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JP2006156327A Expired - Fee Related JP5243699B2 (ja) 2005-06-06 2006-06-05 試料のエッジ検査のためのシステム及び方法

Country Status (2)

Country Link
US (1) US7728965B2 (2)
JP (1) JP5243699B2 (2)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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US20060192949A1 (en) * 2004-12-19 2006-08-31 Bills Richard E System and method for inspecting a workpiece surface by analyzing scattered light in a back quartersphere region above the workpiece
JP5279992B2 (ja) * 2006-07-13 2013-09-04 株式会社日立ハイテクノロジーズ 表面検査方法及び装置
US7787114B2 (en) * 2007-06-06 2010-08-31 Kla-Tencor Technologies Corp. Systems and methods for inspecting a specimen with light at varying power levels
US7746459B2 (en) * 2007-08-10 2010-06-29 Kla-Tencor Technologies Corp. Systems configured to inspect a wafer
US7623229B1 (en) 2008-10-07 2009-11-24 Kla-Tencor Corporation Systems and methods for inspecting wafers
JP2011075406A (ja) * 2009-09-30 2011-04-14 Hitachi High-Technologies Corp 表面欠陥検査方法及びその装置
JP5216752B2 (ja) 2009-11-18 2013-06-19 株式会社日立ハイテクノロジーズ 欠陥検出方法及び欠陥検出装置並びにこれを備えた欠陥観察装置
US8891079B2 (en) 2010-12-16 2014-11-18 Kla-Tencor Corp. Wafer inspection
US9279774B2 (en) * 2011-07-12 2016-03-08 Kla-Tencor Corp. Wafer inspection
US8786850B2 (en) * 2012-10-29 2014-07-22 Kla-Tencor Corporation Illumination energy management in surface inspection
US9201019B2 (en) * 2013-05-30 2015-12-01 Seagate Technology Llc Article edge inspection
US9809898B2 (en) * 2013-06-26 2017-11-07 Lam Research Corporation Electroplating and post-electrofill systems with integrated process edge imaging and metrology systems
WO2015039245A1 (en) * 2013-09-18 2015-03-26 Ats Automation Tooling Systems Inc. System and method for decoration inspection on transparent media
US9822460B2 (en) 2014-01-21 2017-11-21 Lam Research Corporation Methods and apparatuses for electroplating and seed layer detection
US9377416B2 (en) 2014-05-17 2016-06-28 Kla-Tencor Corp. Wafer edge detection and inspection
US9885671B2 (en) 2014-06-09 2018-02-06 Kla-Tencor Corporation Miniaturized imaging apparatus for wafer edge
US9645097B2 (en) 2014-06-20 2017-05-09 Kla-Tencor Corporation In-line wafer edge inspection, wafer pre-alignment, and wafer cleaning
US9735035B1 (en) 2016-01-29 2017-08-15 Lam Research Corporation Methods and apparatuses for estimating on-wafer oxide layer reduction effectiveness via color sensing
KR101992778B1 (ko) * 2017-11-01 2019-06-25 에스케이실트론 주식회사 웨이퍼 및 그 형상 분석 방법
US10811290B2 (en) * 2018-05-23 2020-10-20 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for inspection stations
US10942135B2 (en) * 2018-11-14 2021-03-09 Kla Corporation Radial polarizer for particle detection
US10948423B2 (en) 2019-02-17 2021-03-16 Kla Corporation Sensitive particle detection with spatially-varying polarization rotator and polarizer
CN112881428B (zh) * 2021-01-20 2024-08-09 苏州协同创新智能制造装备有限公司 一种基于激光测距的曲面屏幕边缘外弧缺陷检测的方法

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US6271916B1 (en) * 1994-03-24 2001-08-07 Kla-Tencor Corporation Process and assembly for non-destructive surface inspections
JPH07306154A (ja) * 1994-05-10 1995-11-21 Hitachi Electron Eng Co Ltd ウエハの異物検出方法
US6201601B1 (en) * 1997-09-19 2001-03-13 Kla-Tencor Corporation Sample inspection system
JP3930129B2 (ja) * 1997-11-21 2007-06-13 株式会社トプコン 表面検査方法及び装置
JP3425590B2 (ja) * 1998-06-04 2003-07-14 三菱住友シリコン株式会社 端部傷検査方法およびその装置
JP3996728B2 (ja) * 2000-03-08 2007-10-24 株式会社日立製作所 表面検査装置およびその方法
US6590645B1 (en) * 2000-05-04 2003-07-08 Kla-Tencor Corporation System and methods for classifying anomalies of sample surfaces
US6545752B1 (en) * 2000-07-07 2003-04-08 Daitron, Inc. Method and apparatus for detecting defects along the edge of electronic media
KR100403862B1 (ko) * 2001-01-26 2003-11-01 어플라이드비전텍(주) 반도체 웨이퍼 검사 장치 및 그 방법
JP4230674B2 (ja) * 2001-03-01 2009-02-25 株式会社日立製作所 欠陥検査装置およびその方法
US6538730B2 (en) * 2001-04-06 2003-03-25 Kla-Tencor Technologies Corporation Defect detection system
JP3728495B2 (ja) * 2001-10-05 2005-12-21 独立行政法人産業技術総合研究所 多層膜マスク欠陥検査方法及び装置
JP3629244B2 (ja) * 2002-02-19 2005-03-16 本多エレクトロン株式会社 ウエーハ用検査装置
KR100445457B1 (ko) * 2002-02-25 2004-08-21 삼성전자주식회사 웨이퍼 후면 검사 장치 및 검사 방법
US7130039B2 (en) * 2002-04-18 2006-10-31 Kla-Tencor Technologies Corporation Simultaneous multi-spot inspection and imaging
DE10330005B4 (de) * 2003-07-03 2006-12-21 Leica Microsystems Semiconductor Gmbh Vorrichtung zur Inspektion eines Wafers
US6947588B2 (en) * 2003-07-14 2005-09-20 August Technology Corp. Edge normal process
US7340087B2 (en) * 2003-07-14 2008-03-04 Rudolph Technologies, Inc. Edge inspection
US7280200B2 (en) * 2003-07-18 2007-10-09 Ade Corporation Detection of a wafer edge using collimated light
US7130036B1 (en) * 2003-09-16 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for inspection of an entire wafer surface using multiple detection channels
US7433031B2 (en) * 2003-10-29 2008-10-07 Core Tech Optical, Inc. Defect review system with 2D scanning and a ring detector
US7280197B1 (en) * 2004-07-27 2007-10-09 Kla-Tehcor Technologies Corporation Wafer edge inspection apparatus
US7161669B2 (en) * 2005-05-06 2007-01-09 Kla- Tencor Technologies Corporation Wafer edge inspection
US7161667B2 (en) * 2005-05-06 2007-01-09 Kla-Tencor Technologies Corporation Wafer edge inspection

Also Published As

Publication number Publication date
JP2006343331A (ja) 2006-12-21
US20060274304A1 (en) 2006-12-07
US7728965B2 (en) 2010-06-01

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