JP5268953B2 - 研磨材成形体 - Google Patents
研磨材成形体 Download PDFInfo
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- JP5268953B2 JP5268953B2 JP2009554120A JP2009554120A JP5268953B2 JP 5268953 B2 JP5268953 B2 JP 5268953B2 JP 2009554120 A JP2009554120 A JP 2009554120A JP 2009554120 A JP2009554120 A JP 2009554120A JP 5268953 B2 JP5268953 B2 JP 5268953B2
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- pcd
- polycrystalline diamond
- tspcd
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- abrasive compact
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- 238000000465 moulding Methods 0.000 title description 13
- 239000000463 material Substances 0.000 claims abstract description 73
- 239000002245 particle Substances 0.000 claims abstract description 49
- 239000008187 granular material Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000005520 cutting process Methods 0.000 claims abstract description 11
- 238000005553 drilling Methods 0.000 claims abstract description 3
- 229910003460 diamond Inorganic materials 0.000 claims abstract 28
- 239000010432 diamond Substances 0.000 claims abstract 28
- 239000002904 solvent Substances 0.000 claims description 28
- 239000011159 matrix material Substances 0.000 claims description 18
- 239000011859 microparticle Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000919 ceramic Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000010419 fine particle Substances 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000003863 metallic catalyst Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- -1 alkaline earth metal carbonate Chemical class 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 150000004679 hydroxides Chemical class 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 34
- 239000002184 metal Substances 0.000 description 34
- 239000003054 catalyst Substances 0.000 description 27
- 238000005245 sintering Methods 0.000 description 22
- 239000002131 composite material Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 17
- 239000011230 binding agent Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 239000000843 powder Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000006399 behavior Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000002386 leaching Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 208000013201 Stress fracture Diseases 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 150000001247 metal acetylides Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000005323 carbonate salts Chemical class 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000010438 granite Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
・非金属の触媒/溶媒で焼結されたPCD
・浸出させたPCD、及び
・焼結されたセラミックマトリックス中のダイヤモンド粒子、特に、ケイ素ベースのセラミックマトリックス中のダイヤモンド
等の、様々な材料種から選択され得る(しかしそれらに限定されるものではない)。
・例えば、アルカリ金属又はアルカリ土類金属の炭酸塩、硫酸塩又は水酸化物塩等の、非金属の触媒/溶媒の存在下で焼結されたPCD
・浸出させたPCD、すなわち、金属相が、いくつかの種類の物理化学的処理により次いで大部分除去された、標準的な金属の触媒/溶媒を用いて生成されるPCD材料、及び
・セラミックマトリックスが、酸化物、窒化物、炭化物、及びそれらの任意の組合せであり得る、焼結されたセラミックマトリックス中のダイヤモンド粒子
等の、様々な材料の種類から選択され得る(しかしそれらに限定されるものではない)。
浸潤させ、ダイヤモンド粒と反応させるための元素ケイ素を用いて従来の熱安定性のPCD成形体を製造して、高圧及び高温の条件下でSiC−ダイヤモンド成形体を製造した。この場合におけるダイヤモンド粒は、約20μm大であった。この成形体は、炭化物の基材により支持されていなかった。次いで、焼結された本体は、破砕及び粉砕されて、凝集した又は焼結されたTSPCDの微粒子又は顆粒を生成した。次いで、これらの微粒子又は顆粒を篩いにかけて、所望の大きさ、すなわち50から150μmの間の予備焼結した粒子又は顆粒を得た。
実施例1と同様に、TSPCDの微粒子又は顆粒を、約6μm大のダイヤモンド粒により調製し、30から100μmの間の所望の大きさに篩った。
Claims (14)
- 結合したダイヤモンド粒子の第1の多結晶ダイヤモンド(PCD)材料と、前記第1のPCD材料の至るところに散在するか又は前記第1のPCD材料の所定の領域に散在する第2のPCD材料とを含み、前記第2のPCD材料が、熱安定性多結晶ダイヤモンド(TSPCD)材料の微粒子又は顆粒を含み、前記TSPCDの微粒子又は顆粒の大きさが、1から500μmの間の範囲内であることを特徴とする多結晶ダイヤモンド研磨材成形体。
- 前記第2のPCD材料のTSPCDの微粒子又は顆粒が、前記第1のPCD材料の内部又は前記第1のPCD材料の所定の領域の内部に一様又は均一に分散されている、請求項1に記載の多結晶ダイヤモンド研磨材成形体。
- TSPCDの微粒子又は顆粒の大きさが、5から250μmの間の範囲内である、請求項1又は2に記載の多結晶ダイヤモンド研磨材成形体。
- TSPCDの微粒子又は顆粒中の粒径分布が多峰性である、請求項1から3までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- 予備焼結されたTSPCDの質量パーセントが、2%から50質量%の間の範囲内である、請求項1から4までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- 予備焼結されたTSPCDの質量パーセントが、10%から40質量%の間の範囲内である、請求項1から5までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- TSPCDの微粒子又は顆粒が、非金属の触媒/溶媒で焼結されたPCD、浸出させたPCD、若しくは焼結されたセラミックマトリックス中のダイヤモンド粒子、又はそれらの組合せを含む、請求項1から6までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- 非金属の触媒/溶媒が、アルカリ金属又はアルカリ土類金属の炭酸塩、硫酸塩又は水酸化物塩を含む、請求項7に記載の多結晶ダイヤモンド研磨材成形体。
- 焼結されたセラミックマトリックスが、酸化物、窒化物、炭化物、若しくはケイ素ベースのセラミック、又はそれらの組合せを含む、請求項7に記載の多結晶ダイヤモンド研磨材成形体。
- ケイ素ベースのセラミックが、炭化ケイ素、窒化ケイ素、サイアロン、又はケイ素、炭素、窒素、アルミニウム、チタン及び酸素の組合せにより形成される材料を含む、請求項9に記載の多結晶ダイヤモンド研磨材成形体。
- 第1のPCDの平均ダイヤモンド粒径が、50μm以下である、請求項1から10までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- 第1のPCDの平均ダイヤモンド粒径が、25μm以下である、請求項1から11までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- 多結晶ダイヤモンド研磨材成形体が、超硬合金の支持体又は基材に結合している、請求項1から12までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体。
- 請求項1から13までのいずれか一項に記載の多結晶ダイヤモンド研磨材成形体を含む、基材の切削若しくは研磨に適した、又は掘削用途の、研磨材の切削要素。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ZA200702386 | 2007-03-22 | ||
| PCT/IB2008/051058 WO2008114228A1 (en) | 2007-03-22 | 2008-03-20 | Abrasive compacts |
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| Publication Number | Publication Date |
|---|---|
| JP2011515306A JP2011515306A (ja) | 2011-05-19 |
| JP5268953B2 true JP5268953B2 (ja) | 2013-08-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2009554120A Expired - Fee Related JP5268953B2 (ja) | 2007-03-22 | 2008-03-20 | 研磨材成形体 |
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| Country | Link |
|---|---|
| US (1) | US20100275523A1 (ja) |
| EP (1) | EP2132348B1 (ja) |
| JP (1) | JP5268953B2 (ja) |
| KR (1) | KR20100015759A (ja) |
| CN (1) | CN101617060B (ja) |
| AT (1) | ATE510036T1 (ja) |
| CA (1) | CA2673467A1 (ja) |
| PL (1) | PL2132348T3 (ja) |
| WO (1) | WO2008114228A1 (ja) |
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| US8297382B2 (en) | 2008-10-03 | 2012-10-30 | Us Synthetic Corporation | Polycrystalline diamond compacts, method of fabricating same, and various applications |
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| US8727042B2 (en) | 2009-09-11 | 2014-05-20 | Baker Hughes Incorporated | Polycrystalline compacts having material disposed in interstitial spaces therein, and cutting elements including such compacts |
| US8496076B2 (en) | 2009-10-15 | 2013-07-30 | Baker Hughes Incorporated | Polycrystalline compacts including nanoparticulate inclusions, cutting elements and earth-boring tools including such compacts, and methods of forming such compacts |
| JP5603591B2 (ja) * | 2009-11-27 | 2014-10-08 | 株式会社アドマテックス | 加工用砥粒、加工具、加工液およびそれらを用いた加工方法 |
| US8590643B2 (en) | 2009-12-07 | 2013-11-26 | Element Six Limited | Polycrystalline diamond structure |
| GB201014283D0 (en) * | 2010-08-27 | 2010-10-13 | Element Six Production Pty Ltd | Method of making polycrystalline diamond material |
| WO2012152848A2 (en) | 2011-05-10 | 2012-11-15 | Element Six Abrasives S.A. | Tip for degradation tool and tool comprising same |
| US9061264B2 (en) * | 2011-05-19 | 2015-06-23 | Robert H. Frushour | High abrasion low stress PDC |
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| KR20140108243A (ko) * | 2011-12-30 | 2014-09-05 | 산드빅 인터렉츄얼 프로퍼티 에이비 | 다이아몬드 복합물 및 다이아몬드 복합물의 제조 방법 |
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| US9423370B2 (en) * | 2012-02-21 | 2016-08-23 | Varel International Ind., L.P | Use of capacitance to analyze polycrystalline diamond |
| US9475176B2 (en) * | 2012-11-15 | 2016-10-25 | Smith International, Inc. | Sintering of thick solid carbonate-based PCD for drilling application |
| KR101651664B1 (ko) * | 2014-02-04 | 2016-08-29 | 일진다이아몬드(주) | 열적 안정성이 향상된 다결정 다이아몬드 컴팩트 |
| WO2016049452A1 (en) * | 2014-09-26 | 2016-03-31 | Diamond Innovations, Inc. | Cutters comprising polycrystalline diamond attached to a hard metal carbide substrate |
| EP3514123B1 (en) * | 2014-09-26 | 2021-11-03 | Diamond Innovations, Inc. | Method for making a superabrasive compact |
| JP6871173B2 (ja) * | 2015-01-28 | 2021-05-12 | ダイヤモンド イノヴェーションズ インコーポレイテッド | 砕けやすいセラミック結合ダイヤモンドコンポジット粒子及びその製造方法 |
| CA3010419C (en) * | 2016-01-28 | 2023-10-03 | National Oilwell DHT, L.P. | Systems and methods of fabrication and use of wear-resistant materials |
| US10287824B2 (en) | 2016-03-04 | 2019-05-14 | Baker Hughes Incorporated | Methods of forming polycrystalline diamond |
| US11292750B2 (en) | 2017-05-12 | 2022-04-05 | Baker Hughes Holdings Llc | Cutting elements and structures |
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-
2008
- 2008-03-20 KR KR1020097021963A patent/KR20100015759A/ko not_active Ceased
- 2008-03-20 CA CA002673467A patent/CA2673467A1/en not_active Abandoned
- 2008-03-20 AT AT08719781T patent/ATE510036T1/de not_active IP Right Cessation
- 2008-03-20 PL PL08719781T patent/PL2132348T3/pl unknown
- 2008-03-20 JP JP2009554120A patent/JP5268953B2/ja not_active Expired - Fee Related
- 2008-03-20 US US12/525,945 patent/US20100275523A1/en not_active Abandoned
- 2008-03-20 WO PCT/IB2008/051058 patent/WO2008114228A1/en not_active Ceased
- 2008-03-20 EP EP08719781A patent/EP2132348B1/en active Active
- 2008-03-20 CN CN2008800053868A patent/CN101617060B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| ATE510036T1 (de) | 2011-06-15 |
| EP2132348A1 (en) | 2009-12-16 |
| JP2011515306A (ja) | 2011-05-19 |
| KR20100015759A (ko) | 2010-02-12 |
| CN101617060A (zh) | 2009-12-30 |
| WO2008114228A1 (en) | 2008-09-25 |
| CN101617060B (zh) | 2013-07-03 |
| CA2673467A1 (en) | 2008-09-25 |
| PL2132348T3 (pl) | 2011-10-31 |
| EP2132348B1 (en) | 2011-05-18 |
| US20100275523A1 (en) | 2010-11-04 |
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