JP5418323B2 - Dielectric porcelain composition and electronic component - Google Patents

Description

  The present invention relates to a dielectric ceramic composition and an electronic component.

  In recent years, along with rapid progress in performance of electrical equipment, miniaturization and complexity of electrical circuits are also progressing rapidly. For this reason, electronic components are required to be further reduced in size and performance. That is, a dielectric ceramic composition and an electron having a high relative dielectric constant in order to maintain capacitance even when miniaturized while maintaining good temperature characteristics, and also having a high AC breakdown voltage for use under a high voltage Parts are required.

Conventionally, as a high dielectric constant dielectric ceramic composition widely used as a ceramic capacitor, a multilayer capacitor, a high frequency capacitor, a high voltage capacitor or the like, the one shown in Patent Document 1 is known. In Patent Document 1, the composition formula is (Ba _1-x Ca _x ) (Ti _1-y Zr _y ) O ₃ (where 0.10 <x ≦ 0.25, 0 <y ≦ 0.25). A dielectric ceramic composition mainly composed of barium titanate is disclosed.

In Patent Document 2, the composition formula is represented by (Ba _1−x Ca _x ) (Ti _1−y Zr _y ) O ₃ (where 0 <x ≦ 0.25, 0 <y ≦ 0.25). A dielectric ceramic composition containing barium titanate as a main component and further containing Y ₂ O ₃ , MgO, and Al ₂ O ₃ is disclosed.

  However, in such a conventional high dielectric constant dielectric ceramic composition, when the relative dielectric constant is 3000 or more, it is difficult to reduce the dielectric loss, and a high AC breakdown voltage of 6 kV / mm or more is required. It was difficult to secure.

JP 2003-104774 A JP 2003-109430 A

  The present invention has been made in view of such circumstances, and its object is to provide a dielectric ceramic composition having a high relative dielectric constant and AC breakdown voltage, low dielectric loss, and good temperature characteristics and sinterability. With the goal. Another object of the present invention is to provide an electronic component having a dielectric layer composed of such a dielectric ceramic composition.

  As a result of intensive investigations to achieve the above object, the present inventors are able to achieve the above object by setting the composition of the dielectric ceramic composition as a specific component and setting these ratios within a predetermined range. As a result, the present invention has been completed.

That is, the dielectric ceramic composition according to the present invention for solving the aforementioned problems _{is, (Ba 1-u-v} -w, Ca u, Mg v, Sr w) α (Ti 1-x, Zr x) of _{O 3} A dielectric ceramic composition having a main component represented by a composition formula, nickel oxide, cerium oxide, and manganese oxide,
U in the composition formula is 0.20 to 0.27,
V in the composition formula is 0.018 to 0.049,
W in the composition formula is 0.004 to 0.018,
X in the composition formula is 0.118 to 0.149,
Α in the composition formula is 0.95 to 1.02,
Containing 0.03 to 0.4 parts by weight of the nickel oxide with respect to 100 parts by weight of the main component,
Containing 0.03 to 0.4 parts by weight of the cerium oxide with respect to 100 parts by weight of the main component,
The dielectric ceramic composition contains 0.03 to 0.4 parts by weight of the manganese oxide with respect to 100 parts by weight of the main component.

  According to the present invention, it is possible to provide a dielectric ceramic composition having a high relative dielectric constant and AC breakdown voltage, low dielectric loss, and good temperature characteristics and sinterability. Moreover, according to this invention, the dielectric ceramic composition which can prevent the thermal runaway at room temperature can be provided. Specifically, thermal runaway at room temperature can be prevented by setting the Curie temperature of the dielectric ceramic composition to 20 ° C. or lower.

  Here, thermal runaway is a phenomenon in which the temperature cannot be controlled due to positive feedback that heat generation causes further heat generation.

  An electronic component according to an embodiment of the present invention has a dielectric layer made of the dielectric ceramic composition.

  The electronic component according to the embodiment of the present invention is not particularly limited, but includes a single plate type ceramic capacitor, a feedthrough capacitor, a multilayer ceramic capacitor, a piezoelectric element, a chip inductor, a chip varistor, a chip thermistor, a chip resistor, and other surface mounts. (SMD) chip type electronic components are exemplified.

FIG. 1A is a front view of a ceramic capacitor according to an embodiment of the present invention, and FIG. 1B is a side sectional view of the ceramic capacitor according to an embodiment of the present invention. FIG. 2 is a perspective view of a feedthrough capacitor according to an embodiment of the present invention. FIG. 3 is a graph showing the relationship of the relative dielectric constant with respect to the temperature of the dielectric ceramic composition according to one embodiment of the present invention.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments of the present invention will be described based on the embodiments shown in the drawings.

Ceramic capacitor 2
As shown in FIG. 1A, a ceramic capacitor 2 according to an embodiment of the present invention includes a dielectric layer 10, a pair of terminal electrodes 12, 14 formed on the opposing surface thereof, and the terminal electrodes 12, 14 The lead terminals 6 and 8 are connected to each other, and these are covered with the protective resin 4. The shape of the ceramic capacitor 2 may be appropriately determined according to the purpose and application, but is preferably a disk-type capacitor in which the dielectric layer 10 has a disk shape. The size may be appropriately determined according to the purpose and application, but the diameter is usually about 5 to 20 mm, preferably about 5 to 15 mm.

  The thickness of the dielectric layer 10 is not particularly limited, and may be appropriately determined according to the use or the like, but is preferably 0.3 to 2 mm. By setting the thickness of the dielectric layer 10 in such a range, it can be suitably used for medium to high pressure applications.

  The terminal electrodes 12 and 14 are made of a conductive material. Examples of the conductive material used for the terminal electrodes 12 and 14 include Cu, Cu alloy, Ag, Ag alloy, and In—Ga alloy.

Dielectric layer 10
The dielectric layer 10 of the ceramic capacitor 2 is composed of a dielectric ceramic composition according to an embodiment of the present invention.

The dielectric ceramic composition according to an embodiment of the present invention _is represented by a composition formula of _{(Ba 1-u-v-} w, Ca u, Mg v, Sr w) α (Ti 1-x, Zr x) O 3 A dielectric ceramic composition having a main component, nickel oxide, cerium oxide, and manganese oxide.

  U in the composition formula represents the ratio of Ca, and the range thereof is 0.20 to 0.27, preferably 0.22 to 0.24. When Ca is contained in this range, the relative dielectric constant is improved, the dielectric loss is lowered, and the temperature characteristics tend to be improved.

  V in the composition formula represents a ratio of Mg, and the range thereof is 0.018 to 0.049, preferably 0.028 to 0.03. By containing Mg in this range, the relative permittivity, the AC breakdown voltage and the sinterability are improved, and the temperature characteristics tend to be good.

  W in the composition formula represents a ratio of Sr, and the range thereof is 0.004 to 0.018, preferably 0.015 to 0.017. When Sr is contained in this range, the temperature characteristics are improved and the dielectric loss tends to decrease.

  X in the composition formula represents a ratio of Zr, and the range thereof is 0.118 to 0.149, preferably 0.13 to 0.14. When Zr is contained in this range, the dielectric loss is reduced, the AC breakdown voltage is improved, and the temperature characteristics tend to be improved.

  Α in the composition formula is 0.95 to 1.02, more preferably 1.01 to 1.015. By setting α within this range, the relative permittivity and sinterability are improved, and the dielectric loss and the Curie temperature tend to decrease.

  The dielectric ceramic composition according to the embodiment of the present invention contains 0.03 to 0.4 parts by weight, preferably 0.05 to 0.3 parts by weight of nickel oxide based on 100 parts by weight of the main component. More preferably, it contains 0.1 to 0.2 parts by weight. By containing nickel oxide in this range, the relative permittivity, the AC breakdown voltage, and the sinterability tend to be improved.

  The dielectric ceramic composition according to the embodiment of the present invention contains 0.03 to 0.4 parts by weight, preferably 0.05 to 0.3 parts by weight, of cerium oxide with respect to 100 parts by weight of the main component. More preferably, it contains 0.1 to 0.2 parts by weight. By containing cerium oxide in this range, the temperature characteristics are improved, the AC breakdown voltage and the relative dielectric constant are improved, and the dielectric loss tends to decrease.

  The dielectric ceramic composition according to the embodiment of the present invention contains 0.03 to 0.4 parts by weight, preferably 0.05 to 0.3 parts by weight of manganese oxide with respect to 100 parts by weight of the main component. More preferably, it contains 0.1 to 0.2 parts by weight. By containing manganese oxide in this range, the relative dielectric constant, the AC breakdown voltage, and the sinterability are improved, and the dielectric loss tends to decrease.

  Hereinafter, nickel oxide, cerium oxide or manganese oxide is referred to as “subcomponent”.

Manufacturing method of ceramic capacitor 2
Next, a method for manufacturing the ceramic capacitor 2 will be described.
First, a dielectric ceramic composition powder that will form the dielectric layer 10 shown in FIG. 1 after firing is manufactured.

A raw material for the main component and a raw material for each subcomponent are prepared. Examples of the main component raw material include Ba, Ca, Mg, Sr, Ti, and Zr oxides and / or raw materials that become oxides by firing, and composite oxides thereof. For example, barium carbonate (BaCO ₃ ), calcium carbonate (CaCO ₃ ), magnesium carbonate (MgCO ₃ ), strontium carbonate (SrCO ₃ ), titanium oxide (TiO ₂ ), zirconium oxide (ZrO ₂ ), nickel oxide (NiO), cerium oxide (CeO ₂ ) Manganese oxide (MnO) or the like can be used. In addition, it is also possible to use various compounds that become oxides or titanium compounds after firing, such as hydroxides. In that case, the content may be changed as appropriate so that the number of metal elements matches.

  The main component raw material may be manufactured by a solid phase method or a liquid phase method such as a hydrothermal synthesis method or an oxalate method. It is preferable to manufacture.

  The raw materials for each subcomponent are not particularly limited, and the above-mentioned oxides and composite oxides of each subcomponent, or various compounds that become these oxides or composite oxides by firing, such as carbonates, nitrates, hydroxides, etc. , Organic metal compounds and the like can be appropriately selected and used.

  As a method for producing a dielectric ceramic composition according to an embodiment of the present invention, first, a raw material of a main component, or a raw material of a main component and a raw material of a subcomponent are blended, and wet mixing is performed using a ball mill using zirconia balls or the like. To do. When the subcomponents are blended at this point, each subcomponent may be blended so as to have the composition of the dielectric ceramic composition described above, or only a part may be blended and the remaining subcomponents after calcining May be added.

  The obtained mixture is granulated and molded, and the obtained molded product is calcined in an air atmosphere to obtain a calcined powder. As the calcining conditions, for example, the calcining temperature is preferably 1000 to 1300 ° C., more preferably 1150 to 1250 ° C., and the calcining time is preferably 0.5 to 4 hours. Alternatively, the raw material of the main component and the raw material of the subcomponent may be calcined separately and then mixed to form a dielectric ceramic composition powder.

  Next, the obtained calcined powder is coarsely pulverized. Here, the subcomponents are added together with the raw materials of the subcomponents added before calcination so as to have the composition of the dielectric ceramic composition described above.

  The calcined powder or the calcined powder and the raw materials of the accessory components are wet-ground by a ball mill or the like, further mixed, and dried to obtain a dielectric ceramic composition powder. As described above, by manufacturing the dielectric ceramic composition powder by the solid phase method, it is possible to reduce the manufacturing cost while realizing desired characteristics.

  Next, an appropriate amount of a binder is added to the obtained dielectric ceramic composition powder, granulated, and the obtained granulated product is compression-molded into a disk having a predetermined size, thereby forming a green molded body and To do. The obtained green molded body is fired to obtain a sintered body of the dielectric ceramic composition. In addition, although it does not specifically limit as conditions for baking, Preferably holding temperature is 1200-1400 degreeC, More preferably, it is 1280-1360 degreeC, It is preferable to make a baking atmosphere into the air.

  Terminal electrodes 12 and 14 are formed by printing terminal electrodes on the main surface of the sintered body of the obtained dielectric ceramic composition and baking it as necessary. Thereafter, the lead terminals 6 and 8 are joined to the terminal electrodes 12 and 14 by soldering or the like, and finally, the element main body is covered with the protective resin 4 so as to be shown in FIGS. 1 (A) and 1 (B). Such a single plate type ceramic capacitor is obtained.

  The ceramic capacitor of the present invention thus manufactured is mounted on a printed circuit board or the like via lead terminals 6 and 8, and is used for various electronic devices.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to such embodiment at all, Of course, it can implement in a various aspect within the range which does not deviate from the summary of this invention. .

  In the embodiment described above, the single-plate ceramic capacitor whose dielectric layer is a single layer is exemplified as the electronic component according to the present invention, but the electronic component according to the present invention is not limited to the single-plate ceramic capacitor, A multilayer ceramic capacitor produced by a normal printing method or sheet method using a dielectric paste and an electrode paste containing the dielectric ceramic composition described above may also be used.

  For example, the dielectric layer 210 of the feedthrough capacitor 22 shown in FIG. 2 may be manufactured using the above-described dielectric ceramic composition. The feedthrough capacitor 22 includes a dielectric layer 210, individual electrodes 212 a and 212 b that are independent from each other on one surface of the dielectric layer 210, and a common electrode 214 that is formed on the opposing surface of the individual electrode. The dielectric layer 210, the individual electrodes 212a and 212b, and the common electrode 214 have two through holes 216a and 216b.

  The dielectric layer 210 can be manufactured by the same method as the dielectric layer 10 of the ceramic capacitor 2 described above. The through holes 216a and 216b of the dielectric layer 210 can be formed when the granulated product of the dielectric ceramic composition powder is compression-molded.

  Hereinafter, although this invention is demonstrated based on a more detailed Example, this invention is not limited to these Examples.

Sample 1
BaCO ₃ , CaCO ₃ , MgCO ₃ , SrCO ₃ , TiO ₂ and ZrO ₂ were prepared as the main component raw materials. Further, NiO, CeO ₂ , and MnCO ₃ were prepared as raw materials for subcomponents. Then, these prepared raw materials were weighed so as to have the composition shown in Sample 1 of Table 1, and this raw material mixture was wet mixed and stirred for 3 hours with a ball mill, and after dehydration and drying, at 1170 to 1210 ° C. Preliminary firing was performed to cause a chemical reaction.

  Next, after coarsely pulverizing this, it was again finely pulverized with a pot mill, dehydrated and dried, and polyvinyl alcohol (PVA) as an organic binder was added thereto, granulated and sized to obtain a granular powder. This granular powder was molded at a pressure of 300 MPa to obtain a disk-shaped molded product having a diameter of 16.5 mm and a thickness of 1.15 mm.

  The obtained molded body was subjected to main firing at around 1350 ° C. in air to obtain a porcelain body. A sintered electrode was formed with silver (Ag) paste on both sides of the porcelain body thus obtained, and a lead wire was soldered to this to obtain a porcelain capacitor. Table 3 shows the results of measuring the relative permittivity, dielectric loss, AC breakdown voltage, Curie temperature, temperature characteristics, and sinterability of the sample thus obtained.

(Relative permittivity (ε))
The relative dielectric constant ε was measured for a capacitor sample at a reference temperature of 20 ° C. using a digital LCR meter (4274A manufactured by Agilent Technologies) under the conditions of a frequency of 1 kHz and an input signal level (measurement voltage) of 1.0 Vrms. Calculated from capacitance (no unit). It is preferable that the relative dielectric constant is high. In this example, 3000 or more was considered good.

(Dielectric loss (tan δ))
Dielectric loss (tan δ) was measured with a digital LCR meter (Agilent Technology 4274A) at a reference temperature of 20 ° C. and a frequency of 1 kHz and an input signal level (measurement voltage) of 1.0 Vrms with respect to a capacitor sample. . The dielectric loss is preferably as low as possible. In this example, 0.5% or less was considered good.

(AC breakdown voltage (AC-Eb))
For the AC breakdown voltage (AC-Eb), an AC electric field is gradually applied to both ends of the capacitor at a voltage of 100 V / s, and the electric field value at the time when a leakage current of 100 mA flows is defined as the AC breakdown electric field. It was measured. It is preferable that the AC breakdown electric field is high. In this example, 6.0 kV / mm or more was considered good.

(Curie temperature (Cp))
The relationship between the relative dielectric constant and the temperature when the ambient temperature of the capacitor sample was changed from −40 to 100 ° C. was graphed, and the inflection point was defined as the Curie temperature (Cp). The relative dielectric constant was measured by the above method. If the Curie temperature is higher than room temperature, there is a risk of thermal runaway when the capacitor is used at room temperature. Therefore, in this example, 20 ° C. or less was set as a preferable range. Moreover, about the sample 1 and the sample 41s, the graph showing the change of the dielectric constant in the range of -40-100 degreeC is shown in FIG.

(Temperature characteristics (TC))
The capacitance of the capacitor sample was measured at −25 ° C. and 85 ° C. using a digital LCR meter (YHP 4284A) under the conditions of a frequency of 1 kHz and an input signal level (measurement voltage) of 1 Vrms, and a reference temperature of 20 ° C. The change rate (unit:%) of the capacitance at −25 ° C. and 85 ° C. with respect to the capacitance was calculated. In this example, ΔC / C20 is preferably in a range of + 20% to −55%, and “◯” when the range is satisfied at both −25 ° C. and 85 ° C., and “X” when at least one of them is off. did.

(Sinterability)
With respect to the obtained sintered body, the sintered body density was calculated from the size and weight of the sintered body after firing, and the sintered body density was 5.2 g / cm ³ or more. The thing below cm ³ was made into x. Here, the reason why the reference is less than 5.2 g / cm ³ is that the strength of the substrate is remarkably lowered when it is less than 5.2 g / cm ³ .

Samples 2-61
Except for weighing to the compositions shown in Samples 2 to 61 (Tables 1 and 2), each capacitor sample was obtained in the same manner as Sample 1, and then the relative permittivity, dielectric loss, AC breakdown voltage, Curie temperature, Temperature characteristics and sinterability were evaluated. The results are shown in Table 3 or 4.

  From Samples 1 to 12, when α in the composition formula is 0.95 to 1.02 (Samples 1 and 3 to 11), the sinterability is higher than when α exceeds 1.020 (Sample 2). It was confirmed that it was good. Further, when α in the composition formula is 0.95 to 1.02 (Samples 1 and 3-11), the relative dielectric constant is higher than that when α is less than 0.95 (Sample 12), and the dielectric It was confirmed that the loss and the Curie temperature were lowered.

  From samples 1 and 13 to 21, when u in the composition formula is 0.20 to 0.27 (samples 1 and 14 to 20), the ratio is higher than when u exceeds 0.27 (sample 13). It was confirmed that the dielectric constant increased and the dielectric loss decreased. Further, when u in the composition formula is 0.20 ≦ u ≦ 0.27 (samples 1, 14 to 20), temperature characteristics are better than when u is less than 0.20 (sample 21). It was confirmed that

  From Samples 1, 22-26, the relative dielectric constant when v in the composition formula is 0.018-0.049 (Samples 1, 23-25) and when v exceeds 0.048 (Sample 22) The rate increased and it was confirmed that the sinterability was good. Further, when v in the composition formula is 0.018 to 0.049 (samples 23 to 25), the AC breakdown voltage is higher than that when v is less than 0.018 (sample 26), and the temperature It was confirmed that the characteristics were good.

  From samples 1 and 27 to 33, when w in the composition formula is 0.004 to 0.018 (sample 1, 28 to 32), temperature characteristics are compared to when w exceeds 0.018 (sample 27). Was confirmed to be good. In addition, when w in the composition formula is 0.004 to 0.018 (sample 1, 28 to 32), it is confirmed that the dielectric loss is lower than when w is less than 0.004 (sample 33). did it.

  From Samples 1 and 34 to 41, when the x in the composition formula is 0.118 to 0.149 (Sample 35 to 40), the AC breakdown voltage is higher than when x exceeds 0.149 (Sample 34). It became high and it has confirmed that a temperature characteristic became favorable. Further, when x in the composition formula is 0.118 to 0.149 (sample 35 to 40), the AC breakdown voltage is higher and the temperature characteristic is higher than when x is less than 0.118 (sample 41). It was confirmed that the dielectric loss was reduced and the dielectric loss was reduced.

  From the samples 1 and 42 to 48, when the nickel oxide content is 0.03 to 0.4 parts by weight with respect to 100 parts by weight of the main component (samples 1 and 43 to 47), the nickel oxide content is 0. It was confirmed that the relative dielectric constant and the AC breakdown voltage were higher and the sinterability was better than in the case of exceeding 4 parts by weight (Sample 42). Further, when the content of nickel oxide is 0.03 to 0.4 parts by weight with respect to 100 parts by weight of the main component (Sample 1, 43 to 47), the content of nickel oxide is less than 0.03 parts by weight. It was confirmed that the relative dielectric constant and the AC breakdown voltage were higher than in the case (Sample 48).

  From Samples 1 and 49 to 55, when the cerium oxide content is 0.03 to 0.4 parts by weight with respect to 100 parts by weight of the main component (samples 50 to 54), the cerium oxide content is 0.4. It was confirmed that the relative dielectric constant was higher, the dielectric loss was lower, and the temperature characteristics were better than in the case of exceeding the weight part (Sample 49). Further, when the content of cerium oxide is 0.03 to 0.4 parts by weight with respect to 100 parts by weight of the main component (samples 50 to 54), when the content of cerium oxide is less than 0.03 parts by weight ( As compared with sample 55), it was confirmed that the AC breakdown voltage was higher and the temperature characteristics were better.

  From Samples 1 and 56 to 60, when the manganese oxide content is 0.03 to 0.4 parts by weight with respect to 100 parts by weight of the main component (Samples 1 and 57 to 59), the manganese oxide content is 0.00. It was confirmed that the relative dielectric constant and the AC breakdown voltage were higher and the dielectric loss was lower than when the amount exceeds 4 parts by weight (Sample 56). In addition, when the content of manganese oxide is 0.03 to 0.4 parts by weight with respect to 100 parts by weight of the main component (Sample 1, 57 to 59), the content of manganese oxide is less than 0.03 parts by weight It was confirmed that the relative dielectric constant was higher than that of (Sample 60) and the sinterability was improved.

  The composition of the main components is u = 0.20 to 0.27, v is 0.018 to 0.049, w is 0.004 to 0.018, x is 0.118 to 0.149, and α is 0. Even if it satisfies .95 to 1.02 but does not contain subcomponents (Sample 61), it is confirmed that the dielectric constant and AC breakdown voltage are lowered, the dielectric loss is increased, and the sinterability is deteriorated. did it.

  Furthermore, from FIG. 3A, it was confirmed that Sample 1 had a Curie temperature of −10 ° C., and when it exceeded −10 ° C., the relative dielectric constant decreased with increasing temperature. Thus, when the Curie temperature is as low as −10 ° C., the relative dielectric constant decreases with increasing temperature near room temperature (20 ° C.). As a result, even if the sample generates heat due to the application of an AC electric field, the relative permittivity decreases and the heat generation is suppressed, thereby avoiding positive feedback that the heat generation causes further heat generation and preventing thermal runaway. it can.

  On the other hand, as shown in FIG. 3B, the sample 41s has a Curie temperature of 35 ° C., and the dielectric constant increases with increasing temperature below 35 ° C., and the relative dielectric constant decreases with increasing temperature above 35 ° C. It could be confirmed. Thus, when the Curie temperature is as high as 35 ° C., the relative dielectric constant increases up to the Curie temperature as the temperature rises near the room temperature of 20 ° C. As a result, even if the sample generates heat due to application of an alternating electric field, the relative permittivity does not decrease, so that a positive feedback state in which heat generation causes further heat generation may occur, and thermal runaway may occur.

2 ... Single plate type ceramic capacitor 4 ... Protective resin 6, 8 ... Lead terminal 10 ... Dielectric layer 12, 14 ... Terminal electrode 22 ... Through-type capacitor 210 ... Dielectric layer 212a, 212b ... Individual electrode 214 ... Common electrode 216a, 216b ... Through hole

Claims (2)

A main component _{(Ba 1-u-v-} w, Ca u, Mg v, Sr w) expressed _{α (Ti 1-x, Zr} x) by the composition formula of _{O 3,} nickel oxide, and cerium oxide, A dielectric porcelain composition comprising manganese,
U in the composition formula is 0.20 to 0.27,
V in the composition formula is 0.018 to 0.049,
W in the composition formula is 0.004 to 0.018,
X in the composition formula is 0.118 to 0.149,
Α in the composition formula is 0.95 to 1.02,
Containing 0.03 to 0.4 parts by weight of the nickel oxide with respect to 100 parts by weight of the main component,
Containing 0.03 to 0.4 parts by weight of the cerium oxide with respect to 100 parts by weight of the main component,
A dielectric ceramic composition comprising 0.03 to 0.4 parts by weight of the manganese oxide with respect to 100 parts by weight of the main component. The electronic component which has a dielectric material layer comprised with the dielectric material ceramic composition of Claim 1.

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