JP5438331B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
- Publication number
- JP5438331B2 JP5438331B2 JP2009020511A JP2009020511A JP5438331B2 JP 5438331 B2 JP5438331 B2 JP 5438331B2 JP 2009020511 A JP2009020511 A JP 2009020511A JP 2009020511 A JP2009020511 A JP 2009020511A JP 5438331 B2 JP5438331 B2 JP 5438331B2
- Authority
- JP
- Japan
- Prior art keywords
- multiplication
- solid
- imaging device
- state imaging
- register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
[第1の実施形態]
[第2の実施形態]
[第3の実施形態]
[第4の実施形態]
Claims (5)
- 複数の出力ポートを備えるマルチポート型、かつ、電荷増倍型の固体撮像装置において、
前記複数の出力ポートにそれぞれ対応した複数の部分撮像領域を有し、入射光量に応じた電荷を生成する撮像領域と、
前記複数の部分撮像領域からの電荷をそれぞれ受ける複数の出力レジスタ部と、
前記複数の出力レジスタ部からの電荷をそれぞれ増倍する複数の増倍レジスタ部と、
を備え、
前記複数の増倍レジスタ部の増倍段数はそれぞれ異なる、
固体撮像装置。 - 電荷増倍作用を有さないダミーレジスタ部であって、前記複数の増倍レジスタ部の増倍段数の差を補うための複数のダミーレジスタ部を更に備える、
請求項1に記載の固体撮像装置。 - 前記複数の増倍レジスタ部は、それぞれ、所定の段数の増倍レジスタを有し、
前記所定の段数の増倍レジスタのうちの前記増倍段数以外の増倍レジスタは、電荷増倍作用を有さないダミーレジスタとして機能する、
請求項1に記載の固体撮像装置。 - 前記複数の増倍レジスタ部から出力される電荷量に応じて、前記複数の増倍レジスタ部の増倍段数をそれぞれ制御する制御部を更に備える、
請求項3に記載の固体撮像装置。 - 前記制御部は、前記ダミーレジスタとして機能させる増倍レジスタに、前記増倍段数の増倍レジスタとは異なる駆動電圧を供給する、
請求項4に記載の固体撮像装置。
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009020511A JP5438331B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
| EP10735756.8A EP2385555B1 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device |
| PCT/JP2010/050805 WO2010087287A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
| KR1020117007768A KR101657725B1 (ko) | 2009-01-30 | 2010-01-22 | 고체 촬상 장치 |
| CN201080006096.2A CN102301478B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
| US13/144,727 US8754355B2 (en) | 2009-01-30 | 2010-01-22 | Charge multiplying solid state imaging device having multiplication register units with different number of multiplication stages |
| TW99102300A TWI474477B (zh) | 2009-01-30 | 2010-01-27 | Solid-state imaging device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009020511A JP5438331B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010177567A JP2010177567A (ja) | 2010-08-12 |
| JP5438331B2 true JP5438331B2 (ja) | 2014-03-12 |
Family
ID=42395549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009020511A Expired - Fee Related JP5438331B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8754355B2 (ja) |
| EP (1) | EP2385555B1 (ja) |
| JP (1) | JP5438331B2 (ja) |
| KR (1) | KR101657725B1 (ja) |
| CN (1) | CN102301478B (ja) |
| TW (1) | TWI474477B (ja) |
| WO (1) | WO2010087287A1 (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5237844B2 (ja) | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| CN103698018B (zh) * | 2013-12-20 | 2016-06-29 | 北京理工大学 | 一种带电子倍增的铂硅红外焦平面探测器 |
| CN104767945B (zh) * | 2015-04-14 | 2018-02-06 | 中国电子科技集团公司第四十四研究所 | 能提高emccd转移效率的驱动电路 |
| CN106506998A (zh) * | 2016-11-07 | 2017-03-15 | 中国电子科技集团公司第四十四研究所 | 一种高动态响应范围ccd图像传感器 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2323471B (en) * | 1997-03-22 | 2002-04-17 | Eev Ltd | CCd imagers |
| GB9828166D0 (en) * | 1998-12-22 | 1999-02-17 | Eev Ltd | Imaging apparatus |
| GB2371403B (en) | 2001-01-18 | 2005-07-27 | Marconi Applied Techn Ltd | Solid state imager arrangements |
| JP2003018467A (ja) * | 2001-07-04 | 2003-01-17 | Fuji Photo Film Co Ltd | 電荷増倍型固体電子撮像装置およびその制御方法 |
| JP2003037846A (ja) * | 2001-07-23 | 2003-02-07 | Fuji Photo Film Co Ltd | カラー撮像装置およびその制御方法 |
| GB0316994D0 (en) * | 2003-07-21 | 2003-08-27 | E2V Tech Uk Ltd | Smear reduction in CCD images |
| JP4464253B2 (ja) * | 2003-12-09 | 2010-05-19 | 株式会社リコー | 画像読み取り装置、画像形成装置、画像読み取り方法及び画像形成方法 |
| JP4751617B2 (ja) * | 2005-01-21 | 2011-08-17 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| JP4878123B2 (ja) * | 2005-02-07 | 2012-02-15 | 浜松ホトニクス株式会社 | 固体撮像装置 |
| GB2429521A (en) * | 2005-08-18 | 2007-02-28 | E2V Tech | CCD device for time resolved spectroscopy |
| GB2431538B (en) | 2005-10-24 | 2010-12-22 | E2V Tech | CCD device |
| JP5237844B2 (ja) * | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
-
2009
- 2009-01-30 JP JP2009020511A patent/JP5438331B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-22 KR KR1020117007768A patent/KR101657725B1/ko not_active Expired - Fee Related
- 2010-01-22 WO PCT/JP2010/050805 patent/WO2010087287A1/ja not_active Ceased
- 2010-01-22 US US13/144,727 patent/US8754355B2/en not_active Expired - Fee Related
- 2010-01-22 CN CN201080006096.2A patent/CN102301478B/zh not_active Expired - Fee Related
- 2010-01-22 EP EP10735756.8A patent/EP2385555B1/en not_active Not-in-force
- 2010-01-27 TW TW99102300A patent/TWI474477B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102301478B (zh) | 2014-01-15 |
| TW201103138A (en) | 2011-01-16 |
| CN102301478A (zh) | 2011-12-28 |
| EP2385555B1 (en) | 2014-12-03 |
| WO2010087287A1 (ja) | 2010-08-05 |
| KR20110107318A (ko) | 2011-09-30 |
| KR101657725B1 (ko) | 2016-09-19 |
| US8754355B2 (en) | 2014-06-17 |
| TWI474477B (zh) | 2015-02-21 |
| JP2010177567A (ja) | 2010-08-12 |
| US20110272557A1 (en) | 2011-11-10 |
| EP2385555A1 (en) | 2011-11-09 |
| EP2385555A4 (en) | 2012-09-05 |
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