JP5458372B2 - 露光方法及び露光装置 - Google Patents
露光方法及び露光装置 Download PDFInfo
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- JP5458372B2 JP5458372B2 JP2009090618A JP2009090618A JP5458372B2 JP 5458372 B2 JP5458372 B2 JP 5458372B2 JP 2009090618 A JP2009090618 A JP 2009090618A JP 2009090618 A JP2009090618 A JP 2009090618A JP 5458372 B2 JP5458372 B2 JP 5458372B2
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- Prior art keywords
- exposure
- exposed
- mask pattern
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- photomask
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- 238000000034 method Methods 0.000 title claims description 22
- 230000032258 transport Effects 0.000 description 27
- 238000003384 imaging method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
先ず、ステップS1においては、マスクステージ4は、フォトマスク11の第1のマスクパターン群12を露光可能に選択して停止している。
4…マスクステージ
5…光源光
8…被露光体
9…第1の露光領域
10…第2の露光領域
11…フォトマスク
12…第1のマスクパターン群
13…第2のマスクパターン群
24…第1の露光パターン
25…第2の露光パターン
Claims (4)
- 被露光体を一方向に予め定められた速度で継続的に搬送しながら該被露光体の搬送方向に所定間隔で設定された複数の露光領域毎に異なる露光パターンを形成する露光方法であって、
前記各露光パターンに対応する複数種のマスクパターン群を前記被露光体の搬送方向に前記所定間隔と同じ間隔で並べて形成したフォトマスクの一のマスクパターン群を使用し、且つ該フォトマスクの停止状態で移動中の前記被露光体の一の露光領域に対する露光を実行し、前記一の露光領域の前記被露光体の搬送方向後端部が前記一のマスクパターン群の同方向の後端部に合致すると、前記フォトマスクを前記被露光体の移動に同期して移動して前記一のマスクパターン群から別のマスクパターン群に切り替える段階と、
前記フォトマスクのマスクパターン群の切り替えが終了すると、該フォトマスクの移動を停止して前記別のマスクパターン群により移動中の前記被露光体の次の露光領域に対する露光を実行する段階と、
を行うことを特徴とする露光方法。 - 前記フォトマスクは、前記被露光体の搬送方向に移動することを特徴とする請求項1記載の露光方法。
- 被露光体を一方向に予め定められた速度で継続的に搬送しながら該被露光体の搬送方向に所定間隔で設定された複数の露光領域毎に異なる露光パターンを形成する露光装置であって、
前記被露光体を所定速度で搬送する搬送手段と、
前記搬送手段の上面に対向して配設され、前記各露光パターンに対応する複数種のマスクパターン群を前記被露光体の搬送方向に前記所定間隔と同じ間隔で並べて形成したフォトマスクを保持すると共に、前記搬送手段の移動に同期して移動可能に形成されたマスクステージと、を備え、
前記マスクステージが停止状態で前記フォトマスクの一のマスクパターン群を使用して移動中の前記被露光体の一の露光領域に対する露光を実行し、前記一の露光領域の前記被露光体の搬送方向後端部が前記一のマスクパターン群の同方向の後端部に合致すると、前記マスクステージを移動して前記フォトマスクの一のマスクパターン群から別のマスクパターン群に切り替え、該マスクパターンの切り替えが終了すると、前記マスクステージを停止させて前記別のマスクパターン群により移動中の前記被露光体の次の露光領域に対する露光を実行することを特徴とする露光装置。 - 前記マスクステージは、前記被露光体の搬送方向に移動することを特徴とする請求項3記載の露光装置。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009090618A JP5458372B2 (ja) | 2009-04-03 | 2009-04-03 | 露光方法及び露光装置 |
| PCT/JP2010/054564 WO2010113643A1 (ja) | 2009-04-03 | 2010-03-17 | 露光方法及び露光装置 |
| CN201080013999.3A CN102365588B (zh) | 2009-04-03 | 2010-03-17 | 曝光方法及曝光装置 |
| KR1020117026084A KR101691682B1 (ko) | 2009-04-03 | 2010-03-17 | 노광 방법 및 노광 장치 |
| TW099110266A TWI490659B (zh) | 2009-04-03 | 2010-04-02 | 曝光方法及曝光裝置(二) |
| US13/251,492 US8982321B2 (en) | 2009-04-03 | 2011-10-03 | Exposure method and exposure apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009090618A JP5458372B2 (ja) | 2009-04-03 | 2009-04-03 | 露光方法及び露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010243680A JP2010243680A (ja) | 2010-10-28 |
| JP5458372B2 true JP5458372B2 (ja) | 2014-04-02 |
Family
ID=42827943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009090618A Expired - Fee Related JP5458372B2 (ja) | 2009-04-03 | 2009-04-03 | 露光方法及び露光装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8982321B2 (ja) |
| JP (1) | JP5458372B2 (ja) |
| KR (1) | KR101691682B1 (ja) |
| CN (1) | CN102365588B (ja) |
| TW (1) | TWI490659B (ja) |
| WO (1) | WO2010113643A1 (ja) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5458372B2 (ja) | 2009-04-03 | 2014-04-02 | 株式会社ブイ・テクノロジー | 露光方法及び露光装置 |
| JP5709495B2 (ja) * | 2010-12-06 | 2015-04-30 | 凸版印刷株式会社 | 露光装置 |
| WO2012175899A1 (en) | 2011-06-23 | 2012-12-27 | Syngenta Limited | Herbicidal composition comprising a pyrandione herbicide and a sulfonyl urea herbicide |
| CN102866592B (zh) * | 2012-09-17 | 2015-07-29 | 上海华力微电子有限公司 | 一种提高多层整合光罩工艺套准精度的光刻曝光方法 |
| CN102880012A (zh) * | 2012-09-17 | 2013-01-16 | 上海华力微电子有限公司 | 一种可提高工艺套准精度的曝光方法 |
| CN104122756B (zh) * | 2013-04-28 | 2016-12-28 | 无锡华润上华科技有限公司 | 判断光刻版套刻精度一致性的方法和光刻机 |
| KR101724640B1 (ko) * | 2015-07-21 | 2017-04-11 | 주식회사 필옵틱스 | 레이저 노광 장치 |
| JP6723112B2 (ja) * | 2016-08-29 | 2020-07-15 | 株式会社ブイ・テクノロジー | 露光装置及び露光方法 |
| CN107422615B (zh) * | 2017-09-25 | 2019-08-06 | 武汉华星光电技术有限公司 | 曝光机控制方法、曝光机控制系统及存储介质 |
| JP7082679B2 (ja) | 2018-03-19 | 2022-06-08 | トゥラ イーテクノロジー,インコーポレイテッド | パルス化電気機械制御 |
| US12311772B2 (en) | 2018-03-19 | 2025-05-27 | Tula eTechnology, Inc. | Pulse modulated control with field weakening for improved machine efficiency |
| US12319147B2 (en) | 2021-01-26 | 2025-06-03 | Tula eTechnology, Inc. | Pulsed electric machine control |
| WO2023064226A1 (en) | 2021-10-11 | 2023-04-20 | Tula eTechnology, Inc. | Pulsed control of multiple electric machines |
| CN217181403U (zh) * | 2022-01-26 | 2022-08-12 | 宁德时代新能源科技股份有限公司 | 一种曝光设备 |
| JP2025528312A (ja) | 2022-08-22 | 2025-08-28 | トゥラ イーテクノロジー,インコーポレイテッド | パルス化電気機械の効率を改善するための昇圧ロータ供給回路および方法 |
| CN116430685B (zh) * | 2023-04-28 | 2023-11-14 | 广东科视光学技术股份有限公司 | 全自动曝光方法 |
| US12370907B2 (en) | 2023-10-17 | 2025-07-29 | Tula eTechnology, Inc. | On-pulse transition times for pulsed controlled electric machines using boost voltages |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11237744A (ja) * | 1997-12-18 | 1999-08-31 | Sanee Giken Kk | 露光装置および露光方法 |
| JP4144059B2 (ja) * | 1998-01-27 | 2008-09-03 | 株式会社ニコン | 走査型露光装置 |
| JP2002099097A (ja) * | 2000-09-25 | 2002-04-05 | Nikon Corp | 走査露光方法および走査型露光装置 |
| JP3689698B2 (ja) * | 2003-01-31 | 2005-08-31 | キヤノン株式会社 | 投影露光装置、投影露光方法および被露光部材の製造方法 |
| TW591698B (en) * | 2003-08-18 | 2004-06-11 | Au Optronics Corp | Thin film transistor array substrate and photolithography process and mask design thereof |
| JP2005345586A (ja) * | 2004-06-01 | 2005-12-15 | Ono Sokki Co Ltd | 配線基板用露光装置 |
| GB2422679A (en) * | 2005-01-28 | 2006-08-02 | Exitech Ltd | Exposure method and tool |
| JP5083517B2 (ja) | 2007-06-18 | 2012-11-28 | 凸版印刷株式会社 | 異種パターンの露光方法 |
| TWI402918B (zh) * | 2007-11-28 | 2013-07-21 | Au Optronics Corp | 光罩及薄膜電晶體基板之製造方法 |
| JP5458372B2 (ja) | 2009-04-03 | 2014-04-02 | 株式会社ブイ・テクノロジー | 露光方法及び露光装置 |
-
2009
- 2009-04-03 JP JP2009090618A patent/JP5458372B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-17 KR KR1020117026084A patent/KR101691682B1/ko not_active Expired - Fee Related
- 2010-03-17 CN CN201080013999.3A patent/CN102365588B/zh not_active Expired - Fee Related
- 2010-03-17 WO PCT/JP2010/054564 patent/WO2010113643A1/ja not_active Ceased
- 2010-04-02 TW TW099110266A patent/TWI490659B/zh not_active IP Right Cessation
-
2011
- 2011-10-03 US US13/251,492 patent/US8982321B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TWI490659B (zh) | 2015-07-01 |
| CN102365588A (zh) | 2012-02-29 |
| US8982321B2 (en) | 2015-03-17 |
| TW201109848A (en) | 2011-03-16 |
| KR20120013361A (ko) | 2012-02-14 |
| KR101691682B1 (ko) | 2016-12-30 |
| CN102365588B (zh) | 2014-03-12 |
| WO2010113643A1 (ja) | 2010-10-07 |
| US20120075612A1 (en) | 2012-03-29 |
| JP2010243680A (ja) | 2010-10-28 |
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