JP5529698B2 - マイクロリソグラフィーシステム及び基板を露光する方法 - Google Patents
マイクロリソグラフィーシステム及び基板を露光する方法 Download PDFInfo
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- JP5529698B2 JP5529698B2 JP2010209880A JP2010209880A JP5529698B2 JP 5529698 B2 JP5529698 B2 JP 5529698B2 JP 2010209880 A JP2010209880 A JP 2010209880A JP 2010209880 A JP2010209880 A JP 2010209880A JP 5529698 B2 JP5529698 B2 JP 5529698B2
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- Prior art keywords
- illumination
- optical member
- diffractive optical
- numerical aperture
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001393 microlithography Methods 0.000 title claims description 21
- 238000000034 method Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 title claims description 6
- 230000003287 optical effect Effects 0.000 claims description 91
- 238000005286 illumination Methods 0.000 claims description 55
- 238000003384 imaging method Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009432 framing Methods 0.000 description 3
- 230000003466 anti-cipated effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70158—Diffractive optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
- G03F7/70183—Zoom systems for adjusting beam diameter
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Microscoopes, Condenser (AREA)
Description
可干渉距離(mm)、X&Y:
248nm時間的−比スペック空間0.35×0.15、
193nm時間的−3、空間0.6×0.085
X&Yビーム発散度、mrad、
248nm+/−3.5×+/−3.5、
193nm+/−1×+/−1.75、
ビームサイズ(nm)、X&Y;6×16;20×20;12×32。
Claims (14)
- マイクロリソグラフィーシステムであって、
照明源と、
対物レンズ側からの順序で、
(a)前記照明源からの照明を受光する円形開口数を有する第1の回折光学部材、
(b)ズームレンズ、
(c)矩形開口数を有するアキシコン、
(d)矩形開口数を有する第2の回折光学部材、
(e)円形開口数を有するコンデンサレンズ、
(f)リレーレンズ、
(g)配置されるレチクル
を含む照明光学システムと、
基板上に前記レチクルを結像する投影光学システムと
を備え、
前記マイクロリソグラフィーシステムがズーミング可能な開口数を提供し、
前記照明光学システムの開口数と前記投影光学システムの開口数との比が連続的に変更可能であり、
前記照明光学システムは、前記第2の回折光学部材と前記コンデンサレンズとの間に第3の回折光学部材を更に有し、
前記照明光学システムは、前記第2の回折光学部材を異なる回折光学部材に交換するチェンジャーユニットを更に含み、
前記照明光学システムがフィールドサイズを不連続的に変更する、マイクロリソグラフィーシステム。 - 前記比が約0.2と1の間で連続的に変更可能である、請求項1記載のシステム。
- 前記照明源がエキシマーレーザを含む、請求項1又は2記載のシステム。
- 前記第1の回折光学部材がマイクロレンズアレイを含む、請求項1から3のいずれかに記載のシステム。
- 前記第1の回折光学部材がフレネルレンズを含む、請求項1から3のいずれかに記載のシステム。
- 前記第1の回折光学部材が回折格子を含む、請求項1から3のいずれかに記載のシステム。
- 前記照明システムが更に前記第2の回折部材と前記コンデンサレンズとの間にアキシコンを含む、請求項1から6のいずれかに記載のシステム。
- 前記第2の回折光学部材がマイクロレンズアレイを含む、請求項1から7のいずれかに記載のシステム。
- 前記第2の回折光学部材の前記マイクロレンズアレイが円柱レンズのアレイを含む、請求項8記載のシステム。
- 前記照明光学システムが更に前記コンデンサレンズと前記リレーレンズとの間にデリミッターを含む、請求項1から9のいずれかに記載のシステム。
- 前記照明光学システムが更に前記リレーレンズ内の中心部に配置されたテレセントリック絞りを含む、請求項1から10のいずれかに記載のシステム。
- 前記ズームレンズが非結像ズームレンズである、請求項1から11のいずれかに記載のシステム。
- 基板を露光する方法であって、
対物レンズ側からの順序で、
(a)照明源からの照明を受光する円形開口数を有する第1の回折光学部材、
(b)ズームレンズ、
(c)矩形開口数を有するアキシコン、
(d)矩形開口数を有する第2の回折光学部材、
(e)円形開口数を有するコンデンサレンズ、
(f)リレーレンズ、
(g)配置されるレチクル
を含む照明光学システムを照明し、
レチクルの面にズーミング可能な開口数ビームを形成し、かつ
レチクルの面に形成されたビームを投影光学システムを通して基板上に投影するステップを含み、
前記照明光学システムの開口数と前記投影光学システムの開口数との比が連続的に変更可能であり、
前記照明光学システムは、前記第2の回折光学部材と前記コンデンサレンズとの間に第3の回折光学部材を更に有し、
前記照明光学システムは、前記第2の回折光学部材を異なる回折光学部材に交換するチェンジャーユニットを更に含み、
前記方法が、前記照明光学システムのフィールドサイズを不連続的に変更するステップ
をさらに含む、方法。 - 前記ズームレンズが非結像ズームレンズである、請求項13記載の方法。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/166062 | 2002-06-11 | ||
| US10/166,062 US6813003B2 (en) | 2002-06-11 | 2002-06-11 | Advanced illumination system for use in microlithography |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003166954A Division JP2004031949A (ja) | 2002-06-11 | 2003-06-11 | マイクロリソグラフィー系、マイクロリソグラフィー用の照明系及び基板を露光する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011009780A JP2011009780A (ja) | 2011-01-13 |
| JP5529698B2 true JP5529698B2 (ja) | 2014-06-25 |
Family
ID=29583729
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003166954A Pending JP2004031949A (ja) | 2002-06-11 | 2003-06-11 | マイクロリソグラフィー系、マイクロリソグラフィー用の照明系及び基板を露光する方法 |
| JP2010209880A Expired - Fee Related JP5529698B2 (ja) | 2002-06-11 | 2010-09-17 | マイクロリソグラフィーシステム及び基板を露光する方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003166954A Pending JP2004031949A (ja) | 2002-06-11 | 2003-06-11 | マイクロリソグラフィー系、マイクロリソグラフィー用の照明系及び基板を露光する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US6813003B2 (ja) |
| EP (1) | EP1372034A3 (ja) |
| JP (2) | JP2004031949A (ja) |
| KR (1) | KR100818320B1 (ja) |
| CN (1) | CN100407053C (ja) |
| SG (1) | SG107150A1 (ja) |
| TW (1) | TWI317855B (ja) |
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| US6813003B2 (en) * | 2002-06-11 | 2004-11-02 | Mark Oskotsky | Advanced illumination system for use in microlithography |
| US7006295B2 (en) * | 2001-10-18 | 2006-02-28 | Asml Holding N.V. | Illumination system and method for efficiently illuminating a pattern generator |
| US6842223B2 (en) | 2003-04-11 | 2005-01-11 | Nikon Precision Inc. | Enhanced illuminator for use in photolithographic systems |
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| EP1170635B1 (en) * | 2000-07-05 | 2006-06-07 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| JP2002083759A (ja) * | 2000-09-07 | 2002-03-22 | Nikon Corp | 照明光学装置および該照明光学装置を備えた露光装置 |
| JP2002158157A (ja) * | 2000-11-17 | 2002-05-31 | Nikon Corp | 照明光学装置および露光装置並びにマイクロデバイスの製造方法 |
| JP2002231619A (ja) * | 2000-11-29 | 2002-08-16 | Nikon Corp | 照明光学装置および該照明光学装置を備えた露光装置 |
| KR20020046932A (ko) * | 2000-12-14 | 2002-06-21 | 시마무라 테루오 | 콘덴서 광학계, 및 그 광학계를 구비한 조명 광학 장치그리고 노광 장치 |
| JP4659223B2 (ja) * | 2001-01-15 | 2011-03-30 | キヤノン株式会社 | 照明装置及びこれに用いる投影露光装置並びにデバイスの製造方法 |
| US6573975B2 (en) | 2001-04-04 | 2003-06-03 | Pradeep K. Govil | DUV scanner linewidth control by mask error factor compensation |
| DE10144243A1 (de) * | 2001-09-05 | 2003-03-20 | Zeiss Carl | Zoom-System für eine Beleuchtungseinrichtung |
| US6775069B2 (en) | 2001-10-18 | 2004-08-10 | Asml Holding N.V. | Advanced illumination system for use in microlithography |
| US7079321B2 (en) * | 2001-10-18 | 2006-07-18 | Asml Holding N.V. | Illumination system and method allowing for varying of both field height and pupil |
| US6813003B2 (en) * | 2002-06-11 | 2004-11-02 | Mark Oskotsky | Advanced illumination system for use in microlithography |
| US7006295B2 (en) * | 2001-10-18 | 2006-02-28 | Asml Holding N.V. | Illumination system and method for efficiently illuminating a pattern generator |
-
2002
- 2002-06-11 US US10/166,062 patent/US6813003B2/en not_active Expired - Lifetime
-
2003
- 2003-06-10 TW TW092115719A patent/TWI317855B/zh not_active IP Right Cessation
- 2003-06-11 SG SG200304444A patent/SG107150A1/en unknown
- 2003-06-11 KR KR1020030037509A patent/KR100818320B1/ko not_active Expired - Fee Related
- 2003-06-11 JP JP2003166954A patent/JP2004031949A/ja active Pending
- 2003-06-11 EP EP03013136A patent/EP1372034A3/en not_active Withdrawn
- 2003-06-11 CN CN03142709XA patent/CN100407053C/zh not_active Expired - Fee Related
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2004
- 2004-07-22 US US10/896,022 patent/US7187430B2/en not_active Expired - Fee Related
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2007
- 2007-03-06 US US11/682,573 patent/US20070146674A1/en not_active Abandoned
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Also Published As
| Publication number | Publication date |
|---|---|
| US6813003B2 (en) | 2004-11-02 |
| US20030227609A1 (en) | 2003-12-11 |
| TW200403542A (en) | 2004-03-01 |
| US7187430B2 (en) | 2007-03-06 |
| KR20040026099A (ko) | 2004-03-27 |
| JP2004031949A (ja) | 2004-01-29 |
| EP1372034A2 (en) | 2003-12-17 |
| EP1372034A3 (en) | 2005-06-22 |
| KR100818320B1 (ko) | 2008-04-01 |
| CN100407053C (zh) | 2008-07-30 |
| US20070146674A1 (en) | 2007-06-28 |
| SG107150A1 (en) | 2004-11-29 |
| US20040263821A1 (en) | 2004-12-30 |
| TWI317855B (en) | 2009-12-01 |
| JP2011009780A (ja) | 2011-01-13 |
| CN1474235A (zh) | 2004-02-11 |
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