JP6173684B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP6173684B2 JP6173684B2 JP2012280480A JP2012280480A JP6173684B2 JP 6173684 B2 JP6173684 B2 JP 6173684B2 JP 2012280480 A JP2012280480 A JP 2012280480A JP 2012280480 A JP2012280480 A JP 2012280480A JP 6173684 B2 JP6173684 B2 JP 6173684B2
- Authority
- JP
- Japan
- Prior art keywords
- control gate
- length
- semiconductor device
- height
- buckling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
- H10D30/693—Vertical IGFETs having charge trapping gate insulators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012280480A JP6173684B2 (ja) | 2012-12-25 | 2012-12-25 | 半導体装置の製造方法 |
| TW102121548A TWI500085B (zh) | 2012-12-25 | 2013-06-18 | Manufacturing method of semiconductor device |
| CN201310330352.9A CN103904033B (zh) | 2012-12-25 | 2013-08-01 | 半导体装置的制造方法 |
| US13/958,685 US9099349B2 (en) | 2012-12-25 | 2013-08-05 | Semiconductor device manufacturing method |
| KR1020130093469A KR101513596B1 (ko) | 2012-12-25 | 2013-08-07 | 반도체 장치의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012280480A JP6173684B2 (ja) | 2012-12-25 | 2012-12-25 | 半導体装置の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017121831A Division JP6363266B2 (ja) | 2017-06-22 | 2017-06-22 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014127475A JP2014127475A (ja) | 2014-07-07 |
| JP2014127475A5 JP2014127475A5 (2) | 2016-06-02 |
| JP6173684B2 true JP6173684B2 (ja) | 2017-08-02 |
Family
ID=50973676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012280480A Active JP6173684B2 (ja) | 2012-12-25 | 2012-12-25 | 半導体装置の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9099349B2 (2) |
| JP (1) | JP6173684B2 (2) |
| KR (1) | KR101513596B1 (2) |
| CN (1) | CN103904033B (2) |
| TW (1) | TWI500085B (2) |
Families Citing this family (90)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| US9202785B2 (en) * | 2013-11-08 | 2015-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Three dimensional integrated circuit capacitor having vias |
| US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
| US9455267B2 (en) | 2014-09-19 | 2016-09-27 | Sandisk Technologies Llc | Three dimensional NAND device having nonlinear control gate electrodes and method of making thereof |
| US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
| US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
| US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
| US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
| US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
| US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
| US9356034B1 (en) | 2015-02-05 | 2016-05-31 | Sandisk Technologies Inc. | Multilevel interconnect structure and methods of manufacturing the same |
| CN106206447A (zh) * | 2015-05-05 | 2016-12-07 | 中芯国际集成电路制造(上海)有限公司 | 3d nand器件的形成方法 |
| US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
| US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
| KR102428311B1 (ko) | 2015-08-06 | 2022-08-02 | 삼성전자주식회사 | 반도체 장치 |
| US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
| US9455271B1 (en) | 2015-08-13 | 2016-09-27 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of manufacturing semiconductor memory device and method of layouting auxiliary pattern |
| US9653303B2 (en) | 2015-08-18 | 2017-05-16 | Kabushiki Kaisha Toshiba | Method of manufacturing semiconductor device |
| US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
| US10147736B2 (en) | 2015-09-03 | 2018-12-04 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
| US9911749B2 (en) | 2015-09-09 | 2018-03-06 | Toshiba Memory Corporation | Stacked 3D semiconductor memory structure |
| KR102611438B1 (ko) | 2016-01-07 | 2023-12-08 | 삼성전자주식회사 | 반도체 메모리 소자 |
| KR102535855B1 (ko) * | 2016-02-01 | 2023-05-24 | 에스케이하이닉스 주식회사 | 반도체 장치 |
| US9859363B2 (en) * | 2016-02-16 | 2018-01-02 | Sandisk Technologies Llc | Self-aligned isolation dielectric structures for a three-dimensional memory device |
| KR102630180B1 (ko) * | 2016-02-22 | 2024-01-26 | 삼성전자주식회사 | 수직형 메모리 장치의 레이아웃 검증 방법 |
| US9941209B2 (en) * | 2016-03-11 | 2018-04-10 | Micron Technology, Inc. | Conductive structures, systems and devices including conductive structures and related methods |
| US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
| EP3420590B1 (en) * | 2016-06-28 | 2020-01-29 | SanDisk Technologies LLC | Offset backside contact via structures for a three-dimensional memory device |
| US9917093B2 (en) * | 2016-06-28 | 2018-03-13 | Sandisk Technologies Llc | Inter-plane offset in backside contact via structures for a three-dimensional memory device |
| US10103161B2 (en) * | 2016-06-28 | 2018-10-16 | Sandisk Technologies Llc | Offset backside contact via structures for a three-dimensional memory device |
| US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
| US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
| US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
| US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
| US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
| US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
| US9972641B1 (en) * | 2016-11-17 | 2018-05-15 | Sandisk Technologies Llc | Three-dimensional memory device having a multilevel drain select gate electrode and method of making thereof |
| US10083982B2 (en) * | 2016-11-17 | 2018-09-25 | Sandisk Technologies Llc | Three-dimensional memory device having select gate electrode that is thicker than word lines and method of making thereof |
| US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
| JP2018125476A (ja) | 2017-02-03 | 2018-08-09 | 東芝メモリ株式会社 | テンプレート、インプリント装置および半導体装置の製造方法 |
| US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
| US10319739B2 (en) * | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
| US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
| US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
| JP7176860B6 (ja) | 2017-05-17 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 前駆体の流れを改善する半導体処理チャンバ |
| US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
| US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
| US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
| US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
| US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
| US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
| US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
| US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
| KR102432379B1 (ko) | 2017-10-16 | 2022-08-12 | 삼성전자주식회사 | 반도체 소자 |
| US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
| US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
| US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
| US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
| US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
| TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
| US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
| US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
| US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
| US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
| US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
| CN112105902B (zh) * | 2018-04-11 | 2022-07-22 | 杜比实验室特许公司 | 基于机器学习的用于音频编码和解码的基于感知的损失函数 |
| CN108493191B (zh) * | 2018-04-12 | 2019-06-11 | 长江存储科技有限责任公司 | 形成三维存储器件的栅极隔槽的方法及其使用的光掩模 |
| US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
| US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
| JP2019220612A (ja) | 2018-06-21 | 2019-12-26 | キオクシア株式会社 | 半導体記憶装置 |
| US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
| US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
| US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
| US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
| US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
| US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
| US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
| US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
| US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
| US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
| US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
| US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
| CN109801922B (zh) * | 2019-01-31 | 2020-10-20 | 长江存储科技有限责任公司 | 一种形成三维存储器的方法及三维存储器 |
| US11903214B2 (en) * | 2020-07-16 | 2024-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three-dimensional ferroelectric random access memory devices and methods of forming |
| KR20220098963A (ko) * | 2021-01-05 | 2022-07-12 | 에스케이하이닉스 주식회사 | 반도체장치 및 그 제조 방법 |
| JP2022184482A (ja) | 2021-06-01 | 2022-12-13 | キオクシア株式会社 | 半導体記憶装置 |
| US20250107110A1 (en) * | 2023-09-21 | 2025-03-27 | Macronix International Co., Ltd. | Capacitor structure |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005085938A (ja) | 2003-09-08 | 2005-03-31 | Fujio Masuoka | メモリセルユニット、不揮発性半導体装置およびそれを備えてなる液晶表示装置 |
| KR100661186B1 (ko) * | 2005-03-23 | 2006-12-22 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
| TWI281232B (en) * | 2005-10-17 | 2007-05-11 | Promos Technologies Inc | Method for fabricating nonvolatile memory array |
| JP4822841B2 (ja) * | 2005-12-28 | 2011-11-24 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
| US7780862B2 (en) * | 2006-03-21 | 2010-08-24 | Applied Materials, Inc. | Device and method for etching flash memory gate stacks comprising high-k dielectric |
| JP5016832B2 (ja) * | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
| KR101524830B1 (ko) * | 2009-07-20 | 2015-06-03 | 삼성전자주식회사 | 반도체 소자 및 그 형성방법 |
| US9111799B2 (en) * | 2010-05-25 | 2015-08-18 | Samsung Electronics Co., Ltd. | Semiconductor device with a pick-up region |
| JP2012015343A (ja) * | 2010-07-01 | 2012-01-19 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
| US20120168858A1 (en) * | 2010-12-30 | 2012-07-05 | Hynix Semiconductor Inc. | Non-volatile memory device and method of fabricating the same |
-
2012
- 2012-12-25 JP JP2012280480A patent/JP6173684B2/ja active Active
-
2013
- 2013-06-18 TW TW102121548A patent/TWI500085B/zh active
- 2013-08-01 CN CN201310330352.9A patent/CN103904033B/zh active Active
- 2013-08-05 US US13/958,685 patent/US9099349B2/en active Active
- 2013-08-07 KR KR1020130093469A patent/KR101513596B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140082914A (ko) | 2014-07-03 |
| CN103904033B (zh) | 2017-03-01 |
| CN103904033A (zh) | 2014-07-02 |
| US20140175534A1 (en) | 2014-06-26 |
| JP2014127475A (ja) | 2014-07-07 |
| KR101513596B1 (ko) | 2015-04-20 |
| US9099349B2 (en) | 2015-08-04 |
| TWI500085B (zh) | 2015-09-11 |
| TW201426871A (zh) | 2014-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2014127475A (ja) | 半導体装置の製造方法 | |
| TWI657503B (zh) | 在金屬線之陣列之心軸及非心軸線中形成自對準切口的設備及方法 | |
| CN101304007B (zh) | 制造快闪存储器件的方法 | |
| CN111403399B (zh) | 一种三维存储器件及其制造方法 | |
| US8178442B2 (en) | Method of forming patterns of semiconductor device | |
| CN110534517B (zh) | 集成电路存储器及其形成方法、半导体集成电路器件 | |
| US20110294297A1 (en) | Method of manufacturing semiconductor device | |
| JP2011171735A (ja) | ３次元半導体装置の配線構造体 | |
| US20140306353A1 (en) | 3d memory array | |
| US20120168841A1 (en) | Multiple Patterning Method | |
| CN110518016B (zh) | 间距可扩充立体nand存储器 | |
| CN104051326A (zh) | 在衬底不同深度有接触着陆区的装置的形成方法及3-d结构 | |
| JP2019201038A (ja) | 半導体装置およびその製造方法 | |
| CN108281413A (zh) | 制作电容器的方法 | |
| TW202018868A (zh) | 修改積體電路佈局的方法 | |
| JP4829333B2 (ja) | 半導体記憶装置 | |
| JP6363266B2 (ja) | 半導体装置の製造方法 | |
| JP4167664B2 (ja) | レチクルの補正方法、レチクルの作製方法、パターン形成方法及び半導体装置の製造方法 | |
| TWI847217B (zh) | 三維記憶體元件及製造方法 | |
| TWI806350B (zh) | 半導體記憶裝置 | |
| CN110707044A (zh) | 形成半导体装置布局的方法 | |
| JP2023090215A (ja) | 半導体記憶装置 | |
| US20230229073A1 (en) | Method of correcting a design layout of a semiconductor device, a computing device performing the same and a method of fabricating a semiconductor device using the same | |
| CN115831926B (zh) | 晶圆的测试结构及其制备方法 | |
| KR101145783B1 (ko) | 반도체 메모리 장치 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151020 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20151102 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20151102 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160309 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160408 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160913 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20160915 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161028 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170116 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170123 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170221 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170227 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170606 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170705 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6173684 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |