JP6189727B2 - Universal chuck device - Google Patents

Description

  The present invention relates to a universal chuck device for adsorbing a semiconductor wafer.

  Conventionally, a disk part on which a semiconductor wafer is placed, an annular part that surrounds the disk part via a partition, a through hole that extends downward from the lower surface of the disk part, and a ventilation that extends from the lower surface of the annular part to the through hole A universal chuck device including a mechanism has been proposed (see Patent Document 1). The ventilation mechanism has a spherical valve that is slidably disposed in the switching valve chamber and is biased to an initial position by a spring. When the outer diameter of the semiconductor wafer is smaller than the inner diameter of the annular portion, the spherical valve is pressed against the valve seat with a negative pressure to close the ventilation mechanism. According to such a universal chuck device, a plurality of sizes of semiconductor wafers can be adsorbed without replacing parts.

JP-A-8-1464

  However, since a spherical valve is used in Patent Document 1, in order to configure the spherical valve to be pressed against the valve seat by negative pressure, the size, weight and position of the spherical valve and the biasing force of the spring are precisely set. Need to design. Therefore, development of a universal chuck device having a simpler configuration is demanded.

  The present invention has been made in view of the above-described situation, and an object of the present invention is to provide a universal chuck device capable of adsorbing a plurality of sizes of semiconductor wafers with a simple configuration.

  The universal chuck apparatus which concerns on a 1st aspect is provided with the support part which can rotate centering | focusing on a predetermined | prescribed rotating shaft. The support unit includes a support surface that is substantially perpendicular to a predetermined rotation axis, an inner tube that opens to the support surface, a switching valve chamber that is connected to the inner tube, and a support surface outside the inner tube with respect to the predetermined rotation axis. An outer pipe connected to the switching valve chamber, a communication pipe connected to the switching valve chamber and the inner pipe, a switching valve slidably disposed in the switching valve chamber, and a switching valve disposed in the switching valve chamber. And a biasing member that biases to the initial position. The switching valve includes a first large diameter portion having an outer diameter substantially the same as the inner diameter of the switching valve chamber, a second large diameter portion having an outer diameter substantially the same as the inner diameter of the switching valve chamber, a first large diameter portion, and a second And a small-diameter portion having an outer diameter smaller than the inner diameter of the switching valve chamber. The small diameter portion is located between the outer pipe and the communication pipe when the switching valve is located at the initial position.

  According to the universal chuck device according to the first aspect, when the large-sized semiconductor wafer is placed and the inner tube is decompressed, the switching valve does not move from the initial position, so that the large-sized semiconductor wafer can be adsorbed. Further, when a small-sized semiconductor wafer is placed and the inner tube is depressurized, the switching valve moves to the inner tube side and can attract the small-sized semiconductor wafer. Thus, by using the switching valve having the first large diameter portion, the second large diameter portion, and the small diameter portion, it is possible to adsorb a plurality of sizes of semiconductor wafers with a simple configuration.

  The universal chuck apparatus which concerns on a 2nd aspect is related with a 1st aspect, and is further provided with the mounting part arrange | positioned on a support surface. The mounting unit includes a breathable inner mounting unit, an impermeable first partition wall surrounding the outer periphery of the inner mounting unit, a breathable outer mounting unit surrounding the outer periphery of the first partition wall, and an outer mounting unit. And an air-impermeable second partition wall surrounding the portion. The inner placement portion is disposed on the inner tube, and the outer placement portion is disposed on the outer tube.

  According to the universal chuck device according to the second aspect, the small-sized semiconductor wafer can be sucked entirely by the inner mounting portion, and the large-sized semiconductor wafer can be entirely sucked by the inner mounting portion and the outer mounting portion. Can be adsorbed.

  A universal chuck device according to a third aspect relates to the first aspect, wherein the support portion includes an inner groove formed on the support surface and continuous with the inner tube, and an outer groove formed on the support surface and continuous with the outer tube. Have.

  According to the universal chuck device according to the third aspect, a small-sized semiconductor wafer can be sucked by the inner groove and the large-sized semiconductor wafer by the inner groove and the outer groove without providing a mounting portion. can do. Therefore, the configuration of the universal chuck device can be further simplified.

  The universal chuck device according to the fourth aspect relates to any one of the first to third aspects, and the inner diameter of the lateral hole connected to the inner pipe in the switching valve chamber is smaller than the inner diameter of the inner pipe.

  According to the universal chuck device according to the fourth aspect, it is possible to quickly depressurize the horizontal hole as compared with the case where the inner diameter of the horizontal hole is larger than the inner diameter of the inner tube. Therefore, the switching valve can be moved smoothly when sucking a small-sized semiconductor wafer.

  The universal chuck device according to the fifth aspect relates to any one of the first to fourth aspects, and the inner diameter of the lateral hole is larger than the inner diameter of the communication pipe.

  According to the universal chuck device of the fifth aspect, when a small-sized semiconductor wafer is sucked, the switching valve can be smoothly moved from the initial position due to the pressure difference caused by the diameter difference between the lateral hole and the communication pipe. .

  ADVANTAGE OF THE INVENTION According to this invention, the universal chuck apparatus which can adsorb | suck semiconductor wafers of multiple sizes with a simple structure can be provided.

The top perspective view showing the appearance of the universal chuck device concerning a 1st embodiment. The top perspective view which shows the internal structure of the universal chuck apparatus which concerns on 1st Embodiment. Sectional drawing of the universal chuck apparatus which concerns on 1st Embodiment Sectional drawing of the universal chuck apparatus which concerns on 1st Embodiment The top perspective view showing the appearance of the universal chuck device concerning a 2nd embodiment. Sectional drawing of the universal chuck apparatus which concerns on 2nd Embodiment Sectional drawing of the universal chuck apparatus which concerns on 2nd Embodiment

<First Embodiment>
The configuration of the universal chuck device 100 according to the first embodiment will be described with reference to the drawings. FIG. 1 is a top perspective view showing the external appearance of the universal chuck device 100. FIG. 2 is a top perspective view showing the internal structure of the universal chuck device 100. 3 and 4 are cross-sectional views of the universal chuck device 100. FIG. FIG. 2 illustrates a state where the placement unit 10 is removed. FIG. 3 shows a state where the large-sized semiconductor wafer 200 is attracted to the universal chuck device 100. FIG. 4 shows a state where a small-sized semiconductor wafer 210 is attracted to the universal chuck device 100.

  The universal chuck device 100 can adsorb a large semiconductor wafer 200 and a small semiconductor wafer 210. The universal chuck device 100 can rotate around the rotation axis AX. The rotating semiconductor wafers 200 and 210 are ground by a grinding device (not shown).

  The universal chuck device 100 includes a placement unit 10 and a support unit 20.

  The placement unit 10 is a member for placing a plurality of sizes of semiconductor wafers 200 and 210. The placement unit 10 is disposed on the support surface 20 </ b> S of the support unit 20.

  The placement unit 10 includes an inner placement unit 11, a first partition 12, an outer placement unit 13, and a second partition 14.

  The inner placement part 11 is a disk-shaped member centered on the rotation axis AX. The inner placement portion 11 is disposed on an inner tube 21 described later. As shown in FIG. 4, the radius of the inner mounting portion 11 is equal to the radius of the small-sized semiconductor wafer 210. The inner placement part 11 has air permeability. The inner mounting portion 11 can be formed by sintering a disk-shaped molded body made of alumina, silicon nitride, boron nitride, silicon carbide, titanium carbide or the like.

  The first partition 12 is formed in an annular shape. The first partition wall 12 surrounds the outer periphery of the inner placement portion 11. The first partition 12 has air permeability. The first partition 12 may be a dense body or a porous body including closed pores. The first partition wall 12 can be formed by spraying the same ceramic material as the inner mounting portion 11 on the outer periphery of the inner mounting portion 11.

  The outer placement portion 13 is formed in an annular shape. The outer placement portion 13 is disposed on an outer tube 23 described later. The outer mounting portion 13 surrounds the outer periphery of the first partition wall 12. As shown in FIG. 3, the radius of the outer mounting portion 13 is equal to the radius of the large-sized semiconductor wafer 200. The outer placement part 13 has air permeability. The outer mounting portion 13 can be formed by sintering an annular formed body made of the same ceramic material as the inner mounting portion 11.

  The second partition 14 is formed in an annular shape. The second partition wall 14 surrounds the outer periphery of the outer placement portion 13. The second partition wall 14 is impermeable. In the present embodiment, the second partition wall 14 is formed integrally with the support portion 20. The second partition wall 14 can be formed of the same material as that of the first partition wall 12. However, when the second partition wall 14 is formed integrally with the support portion 20 as in the present embodiment, the same material as the support portion 20 (for example, , Metal materials such as aluminum and steel).

  The support part 20 can rotate around the rotation axis AX. The support part 20 is comprised with air-impermeable materials, such as aluminum and steel. The support unit 20 includes a support surface 20 </ b> S, an inner tube 21, a switching valve chamber 22, an outer tube 23, a communication tube 24, a switching valve 25, and an urging member 26.

  The support surface 20S is provided substantially perpendicular to the rotation axis AX. The mounting part 10 is mounted on the support surface 20S, and the support surface 20S supports the semiconductor wafers 200 and 210 indirectly.

  As shown in FIG. 2, the inner tube 21 opens in the support surface 20S. In the present embodiment, the central axis of the inner tube 21 coincides with the rotation axis AX, but may be located outside the rotation axis AX. Further, the inner diameter 21r of the inner tube 21 is formed in two stages, but may be uniform. When adsorbing the semiconductor wafers 200 and 210, the inside of the inner tube 21 is depressurized by a vacuum device (not shown).

  The switching valve chamber 22 is continuous with the inner pipe 21 through the lateral hole 22a. The switching valve chamber 22 extends in the horizontal direction perpendicular to the rotation axis AX. The switching valve chamber 22 is formed in a cylindrical shape. In the present embodiment, the inner diameter 22r of the switching valve chamber 22 is larger than the inner diameter 22s of the lateral hole 22a, and the inner diameter 22s of the lateral hole 22a is smaller than the inner diameter 21r of the inner tube 21.

  The switching valve chamber 22 accommodates the switching valve 25 and the urging member 26. The switching valve chamber 22 has a valve seat 22b against which the switching valve 25 abuts.

  The outer tube 23 is formed outside the inner tube 21 as shown in FIG. The outer tube 23 opens to the support surface 20S outside the inner tube 21 around the rotation axis AX. The outer pipe 23 continues to the switching valve chamber 22. The outer tube 23 has an opening 23 a formed in the side surface 22 </ b> S of the switching valve chamber 22. In the present embodiment, the inner diameter 23r of the outer tube 23 is smaller than the inner diameter 21r of the inner tube 21, but is not limited thereto.

  The communication pipe 24 is connected to the switching valve chamber 22 and the inner pipe 21. The communication pipe 24 has an opening 24 a formed on the side surface 22 </ b> S of the switching valve chamber 22 and an opening 24 b formed on the side surface 21 </ b> S of the inner pipe 21. In the present embodiment, the inner diameter 24r of the communication pipe 24 is smaller than the inner diameter 21r of the inner pipe 21 and smaller than the inner diameter 22s of the lateral hole 22a.

  The switching valve 25 and the urging member 26 are accommodated in the switching valve chamber 22. The switching valve 25 is slidably disposed in the horizontal direction. The urging member 26 urges the switching valve 25 to maintain the initial position (see FIG. 3). In the present embodiment, the urging member 26 is a coil spring connected to the switching valve 25 (first large diameter portion 25a) and the valve seat 22b, but may be an elastic member.

  The switching valve 25 includes a first large diameter portion 25a, a second large diameter portion 25b, and a small diameter portion 25c.

  The first large diameter portion 25 a has an outer diameter 25 r that is substantially the same as the inner diameter 22 r of the switching valve chamber 22. In the present embodiment, the width of the first large diameter portion 25a is approximately the same as the width 25w of the second large diameter portion 25b, but can be changed as appropriate. The second large diameter portion 25 b has an outer diameter 25 s that is substantially the same as the inner diameter 22 r of the switching valve chamber 22. The width 25w of the second large diameter portion 25b is larger than the inner diameter 23r of the outer tube 23 and the inner diameter 24r of the communication tube 24. The first large diameter portion 25a and the second large diameter portion 25b may be in close contact with the side surface 22S of the switching valve chamber 22. The small diameter part 25c connects the first large diameter part 25a and the second large diameter part 25b. The small diameter portion 25 c has an outer diameter 25 t that is smaller than the inner diameter 22 r of the switching valve chamber 22. The outer diameter 25t of the small diameter portion 25c is smaller than the outer diameter 25r of the first large diameter portion 25a and the outer diameter 25s of the second large diameter portion 25b.

  As shown in FIG. 3, when the switching valve 25 is in the initial position, the first large-diameter portion 25a is closer to the inner tube 21 than the openings 23a and 24a, and the second large-diameter portion 25b is inside the openings 23a and 24a. Apart from the tube 21, the small diameter portion 25c is located between the openings 23a, 24a.

  When the large-sized semiconductor wafer 200 is placed and the inner tube 21 is depressurized, the same negative pressure is applied to the outside and the inside of the first large-diameter portion 25a. Therefore, as shown in FIG. Does not move from its initial position. In this case, since the outer tube 23 and the communication tube 24 communicate with each other through a space around the small diameter portion 25 c, the outer peripheral portion of the large-sized semiconductor wafer 200 is adsorbed by the outer mounting portion 13.

  Further, when the inner tube 21 is depressurized by placing a small semiconductor wafer 210, the inner tube 22s of the switching valve 25 in the switching valve chamber 22 is larger because the inner diameter 22s of the lateral hole 22a is larger than the inner diameter 24r of the communication tube 24. The air is exhausted first from the space on the 21 side (left side in the figure). Due to the pressure difference caused by this, atmospheric pressure is applied to the outside of the first large-diameter portion 25a while negative pressure is applied to the inside, so that the switching valve 25 moves to the inner tube 21 side as shown in FIG. Stops in contact with the seat 22b. In this case, since the space between the outer tube 23 and the communication tube 24 is blocked by the second large diameter portion 25 b, no air is sucked from the outer mounting portion 13 into the outer tube 23. When the decompression of the inner pipe 21 is stopped, the switching valve 25 returns to the initial position by the urging force of the urging member 26.

(Function and effect)
(1) The universal chuck device 100 according to the first embodiment includes a support unit 20. The support unit 20 includes a support surface 20 </ b> S, an inner tube 21, a switching valve chamber 22, an outer tube 23, a communication tube 24, a switching valve 25, and an urging member 26. The support surface 20 </ b> S is substantially perpendicular to the rotation axis AX of the support unit 20. The inner tube 21 opens to the support surface 20S. The switching valve chamber 22 continues to the inner pipe 21. The outer tube 23 opens to the support surface 20S outside the inner tube 21 around the rotation axis AX, and continues to the switching valve chamber 22. The communication pipe 24 is connected to the switching valve chamber 22 and the inner pipe 21. The switching valve 25 includes a first large diameter portion 25a, a second large diameter portion 25b, and a small diameter portion 25c. The small diameter portion 25c is located between the openings 23a and 24a (that is, the outer tube 23 and the communication tube 24) when the switching valve 25 is in the initial position.

  Accordingly, when the large-sized semiconductor wafer 200 is placed and the inner tube 21 is depressurized, an equivalent negative pressure is applied to the inside and the outside of the first large-diameter portion 25a, and as shown in FIG. Since it does not move from the initial position, the large-sized semiconductor wafer 200 can be sucked.

  When the small-sized semiconductor wafer 210 is placed and the inner tube 21 is depressurized, an atmospheric pressure is applied to the outer surface of the first large diameter portion 25a while a negative pressure is applied to the inner surface, as shown in FIG. As described above, since the switching valve 25 moves until it contacts the valve seat 22b, the small-sized semiconductor wafer 210 can be adsorbed.

  Thus, according to the universal chuck device 100 according to the present embodiment, the switching valve 25 having the first large-diameter portion 25a, the second large-diameter portion 25b, and the small-diameter portion 25c can be used to increase the size with a simple configuration. The semiconductor wafer 200 having a size and the semiconductor wafer 210 having a small size can be adsorbed.

  (2) The universal chuck device 100 includes the placement unit 10 disposed on the support surface 20S. The placement unit 10 includes an inner placement unit 11, a first partition 12, an outer placement unit 13, and a second partition 14. The inner placement unit 11 is disposed on the inner tube 21. The outer placement portion 13 is disposed on the outer tube 23.

  Therefore, the small-sized semiconductor wafer 210 can be sucked entirely by the inner mounting portion 11, and the large-sized semiconductor wafer 200 can be sucked by the inner mounting portion 11 and the outer mounting portion 13 as a whole.

  (3) In the present embodiment, the inner diameter 22s of the lateral hole 22a is smaller than the inner diameter 21r of the inner tube 21. Therefore, compared to the case where the inner diameter 22s of the lateral hole 22a is larger than the inner diameter 21r of the inner tube 21, the lateral hole 22a can be quickly decompressed. Therefore, when adsorbing the small-sized semiconductor wafer 210, the switching valve 25 can be moved smoothly.

(4)
In the present embodiment, the inner diameter 22s of the lateral hole 22a is larger than the inner diameter 24r of the communication pipe 24. Therefore, when adsorbing the small-sized semiconductor wafer 210, the switching valve 25 can be smoothly moved from the initial position due to the pressure difference caused by the difference in diameter between the lateral hole 22a and the communication pipe 24.

Second Embodiment
The configuration of the universal chuck device 100 ′ according to the second embodiment will be described with reference to the drawings. FIG. 5 is a top perspective view showing the external appearance of the universal chuck device 100 ′. 6 and 7 are cross-sectional views of the universal chuck device 100 ′. FIG. 6 illustrates a state in which a large-sized semiconductor wafer 200 is attracted to the universal chuck device 100 ′. FIG. 7 shows a state where a small-sized semiconductor wafer 210 is attracted to the universal chuck device 100 ′.

  The universal chuck device 100 ′ according to the second embodiment is different from the universal chuck device 100 according to the first embodiment in that the mounting portion 10 is not provided. Hereinafter, the difference will be mainly described.

  The support portion 20 ′ includes a support surface 20 </ b> S, a first inner groove 101, a first communication groove 102, a second inner groove 103, a second communication groove 104, and an outer groove 105.

  The support surface 20S is provided substantially perpendicular to the rotation axis AX. The semiconductor wafers 200 and 210 are directly placed on the support surface 20S.

  The first inner groove 101 and the first communication groove 102 are formed on the support surface 20S. The first inner groove 101 is formed outside the opening of the inner tube 21 with the rotation axis AX as a reference. In the present embodiment, the first inner groove 101 is formed in an annular shape around the rotation axis AX so as to surround the opening of the inner tube 21. The first communication groove 102 is continuous with the first inner groove 101 and the opening of the inner tube 21. The first inner groove 101 is continuous with the inner pipe 21 via the first communication groove 102.

  The second inner groove 103 and the second communication groove 104 are formed on the support surface 20S. The second inner groove 103 is formed outside the first inner groove 101 on the basis of the rotation axis AX. In the present embodiment, the second inner groove 103 is formed in an annular shape around the rotation axis AX so as to surround the first inner groove 101. The second communication groove 104 is continuous with the first inner groove 101 and the second inner groove 103. The second inner groove 103 is connected to the inner tube 21 via the second communication groove 104, the first inner groove 101, and the first communication groove 102.

  The outer groove 105 is formed in the support surface 20S. The outer groove 105 is formed outside the second inner groove 103 with reference to the rotation axis AX. In the present embodiment, the outer groove 105 is formed in an annular shape around the rotation axis AX so as to surround the second inner groove 103. An outer tube 23 is opened inside the outer groove 105, whereby the outer groove 105 is connected to the outer tube 23. However, the outer groove 105 may be continued to the outer tube 23 through a communication groove formed in the support surface 20S.

  The shape and size of the first inner groove 101, the first communication groove 102, the second inner groove 103, the second communication groove 104, and the outer groove 105 are arbitrarily changed according to the shape and size of the semiconductor wafers 200 and 210. Is possible. Other configurations are the same as those described in the first embodiment.

(Function and effect)
(1) The universal chuck device 100 ′ according to the second embodiment includes a support portion 20 ′. The support portion 20 ′ has a first inner groove 101 and an outer groove 105. The first inner groove 101 is formed in the support surface 20 </ b> S and continues to the inner tube 21. The outer groove 105 is formed in the support surface 20 </ b> S and continues to the outer tube 23.

  Therefore, the small-sized semiconductor wafer 210 can be adsorbed by the first first inner groove 101 and the second inner groove 103 without providing the mounting portion 10 of the first embodiment, and the large-sized semiconductor wafer 200 is The first inner groove 101, the second inner groove 103, and the outer groove 105 can be adsorbed. Therefore, the configuration of the universal chuck device 100 ′ can be simplified.

  (2) The support portion 20 ′ has a second inner groove 103 formed outside the first inner groove 101. Therefore, the semiconductor wafers 200 and 210 can be adsorbed more firmly.

(Other embodiments)
(A) In the above embodiment, the switching valve chamber 22 is formed to extend in the horizontal direction, but may be inclined with respect to the horizontal direction.

  (B) In the above embodiment, the inner tube 21 and the outer tube 23 are formed in parallel with the rotation axis AX, but may be inclined with respect to the rotation axis AX.

  (C) In the above embodiment, the communication pipe 24 is formed in an L shape, but may be formed in a straight line or may be formed in multiple stages.

  (D) Although the urging member 26 is disposed between the switching valve 25 and the inner tube 21 and is connected to the first large diameter portion 25a and the valve seat 22b, it is disposed on the opposite side of the inner tube 21. The second large diameter portion 25 b and the outer end surface of the switching valve 22 may be connected.

  (E) In the first embodiment, the universal chuck device 100 can suck the large-sized semiconductor wafer 200 and the small-sized semiconductor wafer 210, but sucks three or more types of semiconductor wafers. It may be possible. Specifically, a breathable member and a non-breathable member are repeatedly formed outside the second partition wall 14 and a switching valve mechanism (a switching valve chamber 22 and an outer pipe 23 and a communication pipe corresponding to the added breathable member). 24, the switching valve 25, and the urging member 26) may be formed inside the support portion 20.

  (F) In the first embodiment, the outer tube 23 opens at one place on the support surface 20S. However, the present invention is not limited to this. The outer tube 23 may be opened at a plurality of locations on the support surface 20S. In this case, each opening needs to be formed below the outer placement portion 13.

  (G) In the second embodiment, the universal chuck device 100 ′ can suck the large-sized semiconductor wafer 200 and the small-sized semiconductor wafer 210. It may be adsorbable. Specifically, an outer tube and an outer groove are repeatedly formed outside the outer tube 23, and a switching valve mechanism corresponding to the added outer tube may be formed inside the support portion 20 '.

DESCRIPTION OF SYMBOLS 10 Mounting part 11 Inner mounting part 12 1st partition 13 Outer mounting part 14 2nd partition 20 Support part 21 Inner pipe 22 Switching valve chamber 22a Side hole 22b Valve seat 23 Outer pipe 24 Communication pipe 25 Switching valve 26 Energizing Element

Claims (5)

Provided with a support portion that can rotate around a predetermined rotation axis,
The support part is
A support surface substantially perpendicular to the predetermined axis of rotation;
An inner tube opening in the support surface;
A switching valve chamber connected to the inner pipe;
An outer tube that opens to the support surface outside the inner tube with respect to the predetermined rotation axis, and that is continuous with the switching valve chamber;
A communication pipe connected to the switching valve chamber and the inner pipe;
A switching valve slidably disposed in the switching valve chamber;
A biasing member disposed in the switching valve chamber and biasing the switching valve to an initial position;
Have
The switching valve is
A first large diameter portion having an outer diameter substantially the same as the inner diameter of the switching valve chamber;
A second large diameter portion having an outer diameter substantially the same as the inner diameter of the switching valve chamber;
Connecting the first large diameter portion and the second outer diameter portion, a small diameter portion having an outer diameter smaller than the inner diameter of the switching valve chamber;
Including
The small diameter portion is located between the outer pipe and the communication pipe when the switching valve is located at the initial position.
Universal chuck device. It further comprises a mounting portion disposed on the support surface,
The placement section is
A breathable inner mounting;
An impermeable first partition wall that surrounds the outer periphery of the inner mounting portion;
A breathable outer mounting portion surrounding the outer periphery of the first partition;
An impermeable second partition wall surrounding the outer mounting portion;
Have
The inner mounting portion is disposed on the inner tube;
The outer mounting portion is disposed on the outer tube;
The universal chuck device according to claim 1. The support part is
An inner groove formed in the support surface and connected to the inner tube;
An outer groove formed in the support surface and connected to the outer tube;
Having
The universal chuck device according to claim 1. Of the switching valve chamber, the inner diameter of the lateral hole connected to the inner pipe is smaller than the inner diameter of the inner pipe,
The universal chuck device according to claim 1. The inner diameter of the lateral hole is larger than the inner diameter of the communication pipe.
The universal chuck device according to claim 1.

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