JP6500255B2 - 発光装置の製造方法 - Google Patents
発光装置の製造方法 Download PDFInfo
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- JP6500255B2 JP6500255B2 JP2015203906A JP2015203906A JP6500255B2 JP 6500255 B2 JP6500255 B2 JP 6500255B2 JP 2015203906 A JP2015203906 A JP 2015203906A JP 2015203906 A JP2015203906 A JP 2015203906A JP 6500255 B2 JP6500255 B2 JP 6500255B2
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- light emitting
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
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- Led Device Packages (AREA)
Description
(樹脂シートの構成)
図1は、実施の形態に係る樹脂シート10の斜視図である。また、図2(a)、(b)は、それぞれ、図1の切断線A−A、B−Bに沿って切断された樹脂シート10の垂直断面図である。
図3(a)〜(d)は、実施の形態に係る発光装置の製造工程を示す垂直断面図である。
上記実施の形態によれば、発光素子が波長変換層に覆われ、かつリフレクタに囲まれた発光装置を簡易に製造することができる。
11 反射材含有部
12 蛍光体含有部
20 基板
21 発光素子
30、30a、30b、30c、30d 発光装置
31 リフレクタ
32 波長変換層
Claims (3)
- 格子状の反射材含有部と、前記反射材含有部の格子状の開口部を覆うとともに周りが前記反射材含有部によって囲まれた膜状の蛍光体含有部と、を備え、側面が枠で包囲されて保持された樹脂シートを準備する工程と、
複数の発光素子の底面が基板の上面に配置されるように前記複数の発光素子を前記基板上に搭載する工程と、
前記複数の発光素子の各々の周囲を前記複数の発光素子の上面の高さより大なる高さで前記反射材含有部が囲み、かつ前記複数の発光素子の各々の上方を前記反射材含有部の高さ以下の高さで前記蛍光体含有部が覆うように、前記樹脂シートの前記側面を前記枠が包囲して保持した状態で前記複数の発光素子が搭載された基板上に前記樹脂シートを被せる工程と、
前記樹脂シートを前記基板に被せた後、前記樹脂シートの側面を前記枠が包囲して保持した状態で前記樹脂シートを加熱により軟化させ、前記複数の発光素子の上面に前記蛍光体含有部を、前記複数の発光素子の側面に前記反射材含有部を密着させる工程と、
軟化した前記樹脂シートを硬化させた後、前記基板と前記樹脂シートを切断して、前記基板上の発光素子と、前記発光素子を囲む前記反射材含有部からなる環状のリフレクタと、前記発光素子の上面を覆う前記蛍光体含有部からなる波長変換層とを有する発光装置に個片化する工程と、
を含む発光装置の製造方法。 - 脱泡処理をしながら、前記樹脂シートを軟化させる、
請求項1に記載の発光装置の製造方法。 - 前記脱泡処理が真空脱泡である、
請求項2に記載の発光装置の製造方法。
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015203906A JP6500255B2 (ja) | 2015-10-15 | 2015-10-15 | 発光装置の製造方法 |
| US15/287,567 US10243122B2 (en) | 2015-10-15 | 2016-10-06 | Method of manufacturing light-emitting device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015203906A JP6500255B2 (ja) | 2015-10-15 | 2015-10-15 | 発光装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017076719A JP2017076719A (ja) | 2017-04-20 |
| JP6500255B2 true JP6500255B2 (ja) | 2019-04-17 |
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| JP2015203906A Active JP6500255B2 (ja) | 2015-10-15 | 2015-10-15 | 発光装置の製造方法 |
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| US (1) | US10243122B2 (ja) |
| JP (1) | JP6500255B2 (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10224358B2 (en) * | 2017-05-09 | 2019-03-05 | Lumileds Llc | Light emitting device with reflective sidewall |
| CN108878625B (zh) | 2017-05-12 | 2023-05-05 | 日亚化学工业株式会社 | 发光装置及其制造方法 |
| JP6696521B2 (ja) * | 2017-05-12 | 2020-05-20 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
| JP6838528B2 (ja) | 2017-08-31 | 2021-03-03 | 日亜化学工業株式会社 | 基板の製造方法と発光装置の製造方法 |
| JP6677232B2 (ja) | 2017-09-29 | 2020-04-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
| US11335835B2 (en) * | 2017-12-20 | 2022-05-17 | Lumileds Llc | Converter fill for LED array |
| WO2019139357A1 (ko) * | 2018-01-10 | 2019-07-18 | 서울반도체주식회사 | 발광 장치 |
| KR102701802B1 (ko) | 2018-01-10 | 2024-09-03 | 서울반도체 주식회사 | 발광 장치 |
| KR102453678B1 (ko) * | 2018-02-20 | 2022-10-11 | 에피스타 코포레이션 | 발광소자 및 그의 제작방법 |
| US10553768B2 (en) * | 2018-04-11 | 2020-02-04 | Nichia Corporation | Light-emitting device |
| EP3956925A1 (en) * | 2019-04-18 | 2022-02-23 | Lumileds Holding B.V. | Lighting device |
| FR3095550B1 (fr) * | 2019-04-26 | 2021-05-21 | Commissariat Energie Atomique | Procede de realisation d’un dispositif photo-emetteur et/ou photo-recepteur a grille de separation optique metallique |
| JP7121294B2 (ja) * | 2019-09-10 | 2022-08-18 | 日亜化学工業株式会社 | 発光装置の製造方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3844196B2 (ja) | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
| CN102576735B (zh) * | 2009-09-30 | 2016-01-20 | 大日本印刷株式会社 | 挠性装置用基板、挠性装置用薄膜晶体管基板、挠性装置、薄膜元件用基板、薄膜元件、薄膜晶体管、薄膜元件用基板的制造方法、薄膜元件的制造方法及薄膜晶体管的制造方法 |
| JP5700544B2 (ja) * | 2011-04-14 | 2015-04-15 | 日東電工株式会社 | 発光ダイオード装置の製造方法 |
| JP5745319B2 (ja) * | 2011-04-14 | 2015-07-08 | 日東電工株式会社 | 蛍光反射シート、および、発光ダイオード装置の製造方法 |
| JP5452645B2 (ja) | 2011-09-02 | 2014-03-26 | 三菱電機株式会社 | 発光装置及び発光装置の製造方法 |
| JP2013118210A (ja) * | 2011-12-01 | 2013-06-13 | Citizen Holdings Co Ltd | 半導体発光装置及びその製造方法 |
| US8907502B2 (en) * | 2012-06-29 | 2014-12-09 | Nitto Denko Corporation | Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device |
| KR102075993B1 (ko) * | 2013-12-23 | 2020-02-11 | 삼성전자주식회사 | 백색 led 소자들을 제조하는 방법 |
| JP6187277B2 (ja) * | 2014-01-21 | 2017-08-30 | 豊田合成株式会社 | 発光装置及びその製造方法 |
| JP6755090B2 (ja) * | 2014-12-11 | 2020-09-16 | シチズン電子株式会社 | 発光装置及び発光装置の製造方法 |
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2015
- 2015-10-15 JP JP2015203906A patent/JP6500255B2/ja active Active
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2016
- 2016-10-06 US US15/287,567 patent/US10243122B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20170110635A1 (en) | 2017-04-20 |
| US10243122B2 (en) | 2019-03-26 |
| JP2017076719A (ja) | 2017-04-20 |
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