JP6571022B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP6571022B2 JP6571022B2 JP2016019830A JP2016019830A JP6571022B2 JP 6571022 B2 JP6571022 B2 JP 6571022B2 JP 2016019830 A JP2016019830 A JP 2016019830A JP 2016019830 A JP2016019830 A JP 2016019830A JP 6571022 B2 JP6571022 B2 JP 6571022B2
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- substrate processing
- processing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
- H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6534—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a liquid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
- H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
- H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0229—Suction chambers for aspirating the sprayed liquid
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
104 主供給配管
200 供給制御モジュール(処理流体供給制御部)
201 ベース板
202,204 流れ制御機器(開閉弁、流量制御弁)
205 モジュール配管
210、220 駆動部(第1駆動機器ボックス、第2駆動機器ボックス)
213,223 駆動機器(ソレノイドバルブ、電空レギュレータ)
Claims (9)
- 基板に処理流体を供給して処理を行う複数の基板処理部と、
前記複数の前記基板処理部と1対1で対応するとともに、前記基板処理部に供給される処理流体に作用することにより当該処理流体の流れを制御する流れ制御機器を含んでいる、複数の処理流体供給制御部と、
前記複数の前記処理流体供給制御部と1対1で対応するとともに、対応する処理流体供給制御部の流れ制御機器を動作させる駆動機器を含んでいる、複数の駆動部と、
を備え、
前記複数の基板処理部の各々が、対応する前記処理流体供給制御部及び前記駆動部と一緒に個別の組立体を形成し、
前記各基板処理部はスロットが設けられた底板を有し、前記組立体を形成するときに前記スロットに前記処理流体供給制御部が挿入されることを特徴とする基板処理装置。 - 前記各処理流体供給制御部は、対応する前記基板処理部の下方に隣接して設けられている、請求項1記載の基板処理装置。
- 前記各駆動部は、対応する前記処理流体供給制御部に隣接して設けられている、請求項2記載の基板処理装置。
- 前記各処理流体供給制御部およびこれに対応する前記駆動部は、対応する前記基板処理部に固定されている、請求項3記載の基板処理装置。
- 前記各処理液供給制御部は、相互に分離可能な複数の供給制御モジュールを備え、前記各供給制御モジュールは、ベース板と、前記ベース板上に取り付けられた前記流れ制御機器およびモジュール配管を有している、請求項1記載の基板処理装置。
- 前記各処理流体供給制御部を構成する前記複数の供給制御モジュールは、複数の前記ベース板が直立した状態で水平方向に並べられた状態で、対応する前記基板処理部の前記底板に設けられた前記スロットにより保持されている、請求項5記載の基板処理装置。
- 前記処理流体としての処理液を処理液供給源から前記複数の基板処理部に供給する主供給配管をさらに備え、前記主供給配管から前記複数の処理流体供給制御部に処理流体が分配され、前記複数の基板処理部は、水平方向の第1方向に並べられ、前記主供給配管は、前記複数の基板処理部の下方を前記第1方向に延びている、請求項1記載の基板処理装置。
- 前記組立体の各々は、1つの組立体単位で個別に搬送可能である、請求項1から7のうちのいずれか一項に記載の基板処理装置。
- 前記組立体の各々は、前記基板処理装置の機枠を用いることなく個別に一体化されている、請求項8記載の基板処理装置。
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016019830A JP6571022B2 (ja) | 2016-02-04 | 2016-02-04 | 基板処理装置 |
| KR1020170010885A KR102683496B1 (ko) | 2016-02-04 | 2017-01-24 | 기판 처리 장치 및 기판 처리 장치의 조립 방법 |
| US15/423,815 US11056357B2 (en) | 2016-02-04 | 2017-02-03 | Substrate processing apparatus and substrate processing apparatus assembling method |
| CN201710065981.1A CN107039313B (zh) | 2016-02-04 | 2017-02-06 | 基板处理装置和基板处理装置的组装方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016019830A JP6571022B2 (ja) | 2016-02-04 | 2016-02-04 | 基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017139360A JP2017139360A (ja) | 2017-08-10 |
| JP6571022B2 true JP6571022B2 (ja) | 2019-09-04 |
Family
ID=59497944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016019830A Active JP6571022B2 (ja) | 2016-02-04 | 2016-02-04 | 基板処理装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11056357B2 (ja) |
| JP (1) | JP6571022B2 (ja) |
| KR (1) | KR102683496B1 (ja) |
| CN (1) | CN107039313B (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102478777B1 (ko) * | 2017-04-06 | 2022-12-21 | 도쿄엘렉트론가부시키가이샤 | 액 공급 장치 및 액 공급 방법 |
| JP7085126B2 (ja) * | 2018-05-10 | 2022-06-16 | トヨタ自動車株式会社 | 全固体電池の制御方法 |
| JP7373968B2 (ja) * | 2019-11-01 | 2023-11-06 | 東京エレクトロン株式会社 | ガス供給システム |
| TWI799172B (zh) * | 2021-03-19 | 2023-04-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置、及基板處理方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4098326A (en) * | 1976-09-30 | 1978-07-04 | Mcdonnell Douglas Corporation | Heat exchanger gas separator |
| DE4438806C1 (de) * | 1994-10-31 | 1996-03-21 | Weidmueller Interface | Modulare Steuerungsanlage mit Busleiter |
| JP4011210B2 (ja) * | 1998-10-13 | 2007-11-21 | 株式会社コガネイ | 薬液供給方法および薬液供給装置 |
| WO2004109420A1 (ja) | 2003-06-09 | 2004-12-16 | Ckd Corporation | 相対的圧力制御システム及び相対的流量制御システム |
| JP2006114607A (ja) * | 2004-10-13 | 2006-04-27 | Tokyo Electron Ltd | 処理液供給装置 |
| JP4767783B2 (ja) | 2006-07-26 | 2011-09-07 | 東京エレクトロン株式会社 | 液処理装置 |
| JP5406518B2 (ja) * | 2008-12-18 | 2014-02-05 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| JP5146526B2 (ja) * | 2010-12-28 | 2013-02-20 | 東京エレクトロン株式会社 | 液処理装置 |
| JP5146527B2 (ja) * | 2010-12-28 | 2013-02-20 | 東京エレクトロン株式会社 | 液処理装置 |
-
2016
- 2016-02-04 JP JP2016019830A patent/JP6571022B2/ja active Active
-
2017
- 2017-01-24 KR KR1020170010885A patent/KR102683496B1/ko active Active
- 2017-02-03 US US15/423,815 patent/US11056357B2/en active Active
- 2017-02-06 CN CN201710065981.1A patent/CN107039313B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN107039313B (zh) | 2021-11-30 |
| US11056357B2 (en) | 2021-07-06 |
| JP2017139360A (ja) | 2017-08-10 |
| US20170229324A1 (en) | 2017-08-10 |
| KR20170093066A (ko) | 2017-08-14 |
| KR102683496B1 (ko) | 2024-07-09 |
| CN107039313A (zh) | 2017-08-11 |
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