JP6780095B2 - 光電変換素子の製造方法 - Google Patents

光電変換素子の製造方法 Download PDF

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Publication number
JP6780095B2
JP6780095B2 JP2019509771A JP2019509771A JP6780095B2 JP 6780095 B2 JP6780095 B2 JP 6780095B2 JP 2019509771 A JP2019509771 A JP 2019509771A JP 2019509771 A JP2019509771 A JP 2019509771A JP 6780095 B2 JP6780095 B2 JP 6780095B2
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Japan
Prior art keywords
electrode
photoelectric conversion
insulating film
surface side
main surface
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JP2019509771A
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English (en)
Japanese (ja)
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JPWO2018181128A1 (ja
Inventor
和田　英敏
英敏 和田
末崎　恭
恭 末崎
将典 福田
将典 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
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Kaneka Corp
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Publication of JPWO2018181128A1 publication Critical patent/JPWO2018181128A1/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing of the conductive pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
JP2019509771A 2017-03-31 2018-03-26 光電変換素子の製造方法 Active JP6780095B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017072808 2017-03-31
JP2017072808 2017-03-31
PCT/JP2018/012036 WO2018181128A1 (fr) 2017-03-31 2018-03-26 Procédé de production d'un élément de conversion photoélectrique

Publications (2)

Publication Number Publication Date
JPWO2018181128A1 JPWO2018181128A1 (ja) 2019-11-07
JP6780095B2 true JP6780095B2 (ja) 2020-11-04

Family

ID=63675736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019509771A Active JP6780095B2 (ja) 2017-03-31 2018-03-26 光電変換素子の製造方法

Country Status (2)

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JP (1) JP6780095B2 (fr)
WO (1) WO2018181128A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110217809A1 (en) * 2008-11-14 2011-09-08 Applied Nanotech Holdings, Inc. Inks and pastes for solar cell fabricaton
CN102770969A (zh) * 2009-12-21 2012-11-07 第一太阳能有限公司 具有缓冲层的光伏装置
JP5980574B2 (ja) * 2012-05-29 2016-08-31 ハリマ化成株式会社 導電性金属厚膜形成用材料および導電性金属厚膜の形成方法
EP2993700B1 (fr) * 2013-05-17 2017-06-28 Kaneka Corporation Procédé de production d'une cellule solaire

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Publication number Publication date
JPWO2018181128A1 (ja) 2019-11-07
WO2018181128A1 (fr) 2018-10-04

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