JP7204689B2 - 非酸化物セラミック粉末を製造する方法 - Google Patents
非酸化物セラミック粉末を製造する方法 Download PDFInfo
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- JP7204689B2 JP7204689B2 JP2019568335A JP2019568335A JP7204689B2 JP 7204689 B2 JP7204689 B2 JP 7204689B2 JP 2019568335 A JP2019568335 A JP 2019568335A JP 2019568335 A JP2019568335 A JP 2019568335A JP 7204689 B2 JP7204689 B2 JP 7204689B2
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- metal halide
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- 239000000843 powder Substances 0.000 title claims description 89
- 229910052575 non-oxide ceramic Inorganic materials 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 239000011225 non-oxide ceramic Substances 0.000 title claims description 20
- 229910001507 metal halide Inorganic materials 0.000 claims description 78
- 238000000034 method Methods 0.000 claims description 65
- 239000008188 pellet Substances 0.000 claims description 62
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 42
- 239000000203 mixture Substances 0.000 claims description 36
- 238000002844 melting Methods 0.000 claims description 21
- 230000008018 melting Effects 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 21
- 239000011780 sodium chloride Substances 0.000 claims description 21
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 20
- 239000001301 oxygen Substances 0.000 claims description 20
- 229910052760 oxygen Inorganic materials 0.000 claims description 20
- 239000002243 precursor Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 239000007858 starting material Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 150000005309 metal halides Chemical class 0.000 claims description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 7
- 150000001247 metal acetylides Chemical class 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 2
- 235000002639 sodium chloride Nutrition 0.000 description 93
- 150000003839 salts Chemical class 0.000 description 73
- 239000012071 phase Substances 0.000 description 49
- 238000003786 synthesis reaction Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 24
- 239000010936 titanium Substances 0.000 description 24
- 239000012298 atmosphere Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 9
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 230000004907 flux Effects 0.000 description 7
- 229910009817 Ti3SiC2 Inorganic materials 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 238000012512 characterization method Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- -1 titanium hydride Chemical compound 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 235000011164 potassium chloride Nutrition 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- 229910003178 Mo2C Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004115 Sodium Silicate Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011833 salt mixture Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 229910052911 sodium silicate Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002076 thermal analysis method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000003842 bromide salts Chemical class 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 description 1
- 229910052912 lithium silicate Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000011858 nanopowder Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000048 titanium hydride Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000003826 uniaxial pressing Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000004584 weight gain Effects 0.000 description 1
- 235000019786 weight gain Nutrition 0.000 description 1
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- C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
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Description
非酸化物材料の合成は、酸素の存在下で材料が酸化するのを防ぐために、常に保護雰囲気または真空で実施されることが知られている。したがって、望ましくない酸化から保護しなくてはならない非酸化物材料の加工(Prozessieren)を、通常アルゴン、窒素の保護雰囲気または真空で行うことは避けられない要求である。
本発明の課題は、従来の方法よりも著しく安価であり、かつさらに取り扱いも容易である、非酸化物セラミック粉末を製造するための、特にMAX相粉末を製造するための代替的合成手段を提供することである。
本発明の範囲において、非酸化物セラミック粉末を製造する際に、非酸化物材料が酸化されることなく従来の通常の保護雰囲気または真空での使用を省くことが可能であることが見出された。
さらに、複数の実施形態に基づいて本発明をより詳細に説明するが、これは広い保護範囲を制限することを意図するものではない。
この場合、Ti3SiC2粉末を製造するために、Ti(純度99.9%、-325メッシュ)、Si(純度99.9%、-325メッシュ)およびグラファイト(純度99.9%)をNaClと混合し、その際Ti/Si/Cの質量比を3:1:2に設定した。Ti+Si+C対NaClの質量比は1:1だった。
この場合、Ti3AlC2粉末を製造するために、Ti(純度99.9%、-325メッシュ)、Al(純度99.9%、-325メッシュ)およびグラファイト(純度99.99%)をKBrと混合し、その際Ti/Al/Cのモル比を3:1:2に設定した。Ti+Al+C対NaClの質量比は1:1だった。
この場合、Cr2AlC粉末を製造するために、Cr(純度99.9%、-60メッシュ)、Al(純度99.9%、-325メッシュ)およびグラファイト(純度99.99%)をKBrと混合し、その際Cr/Al/Cのモル比を2:1:1に設定した。Cr+Al+C対NaClの質量比は1:1だった。
この場合、非典型的なMAX相粉末の製造のための例として、しかし炭化物粉末のための例として、Ti(純度99.9%、-325メッシュ)およびグラファイト(純度99%)をKBrと混合し、その際Ti/Cのモル比を1:1に設定した。Ti+C対KBrの質量比は同様に1:1だった。
[1] W. Jeitschko, H. Nowotny, Die Kristallstruktur von Ti3SiC2 - ein neuer Komplexcarbid-Typ, Monatshefte fuer Chemie - Chemical Monthly, March 1967, Volume 98, Issue 2, Pages 329 - 337.
[2] Michael W. Barsoum, Tamnr el-Raghy, Synthesis and Characterization of a Remarkable Ceramic: Ti3SiC2, Journal of the American Chemical Society, Volume 79, Issue 7, July 1996 , Pages 1953 - 1956.
[3] T. Goto, T. Hirai, Chemically vapor deposited Ti3SiC2, Materials Research Bulletin,
Volume 22, Issue 9, September 1987, Pages 1195 - 1201.
[4] Xue Guo, Junxia Wang, Shiyuan Yang, Long Gao, Bin Qian, Preparation of Ti3SiC2 powders by the molten salt method, Materials Letters, Volume 111, 15 November 2013, Pages 211 - 213.
[5] Jing Guo, Hanzheng Guo, Amanda L. Baker, Michael T. Lanagan, Elizabeth R. Kupp, Gary L. Messing, and Clive A. Randall, Cold Sintering: A Paradigm Shift for Processing and Integration of Ceramics, Angewandte Chemie, International Edition, Volume 55, Issue 38, Version of Record online: 11 AUG 2016.
本発明は以下の項目の実施形態を含む。
[項目1]
化学量論的量の、窒化物、炭化物、ホウ化物または少なくとも1つのMAX相を形成するのに必要な元素を含む元素状出発物質または他の前駆体を、少なくとも1つの金属ハロゲン塩(NZ)と混合し圧縮する、少なくとも1つの窒化物、炭化物、ホウ化物または少なくとも1つの一般組成式M n+1 AX n [式中、
M=遷移元素の群(Sc、Ti、V、Cr、Zr、Nb、Mo、HfおよびTa)からの少なくとも1つの元素、
A=群(Si、Al、Ga、Ge、As、Cd、In、Sn、TlおよびPb)からの少なくとも1つのA群元素、
X=炭素(C)および/または窒素(N)および/またはホウ素(B)および
n=1、2または3]
のMAX相を含む非酸化物セラミック粉末を製造する方法において、
-圧縮したペレット(4)を少なくとも1つの金属ハロゲン塩で被覆し(ummanteln)、再度圧縮し(3)、
-引き続き、金属ハロゲン塩床(NZ)(2)中で加熱する
ことを特徴とする、前記方法。
[項目2]
出発物質または他の前駆体と、金属ハロゲン塩との混合を、非反応性溶媒中でまたは乾式で行う、項目1に記載の方法。
[項目3]
混合をボールミルで行う、項目1または2に記載の方法。
[項目4]
加熱を、使用する金属ハロゲン塩の溶融温度より上の温度まで少なくとも行う、項目1~3のいずれか一つに記載の方法。
[項目5]
金属ハロゲン塩(NZ)[ここで、N=群(Li、Na、K、Rb、Cs、Mg、Be、Ca、Ba)からの少なくとも1つの元素およびZ=群(F、Cl、Br、I)からの少なくとも1つの元素]または相応する金属ハロゲン塩の混合物、特にNaClまたはKBrを使用する、項目1~4のいずれか一つに記載の方法。
[項目6]
元素状出発物質または他の前駆体および少なくとも1つの金属ハロゲン塩を含む混合物を、乾燥混合物として、まず圧縮してペレット(4)にする、項目1~5のいずれか一つに記載の方法。
[項目7]
混合物を、まず一軸方向に圧縮し、引き続き冷間静水圧圧縮してペレット(4)にする、項目6に記載の方法。
[項目8]
圧縮工程に10MPA~1000MPA、有利には50MPA~500MPAの圧力を使用する、項目1~7のいずれか一つに記載の方法。
[項目9]
被覆体の圧縮工程に10MPA~1000MPA、有利には50MPA~500MPAの圧力を使用する、項目1~8のいずれか一つに記載の方法。
[項目10]
金属ハロゲン塩で被覆した(3)ペレット(4)を、金属ハロゲン塩浴(2)中に配置し、金属ハロゲン塩の溶融温度より上の温度まで共に加熱する、項目1~9のいずれか一つに記載の方法。
[項目11]
金属ハロゲン塩浴の加熱を、酸素の存在下で行う、項目1~10のいずれか一つに記載の方法。
[項目12]
ペレット(4)を備える溶融金属ハロゲン塩浴(2)に、付加的に、さらに溶融ケイ酸塩を加えるが、この溶融ケイ酸塩は層として溶融金属ハロゲン塩浴上に浮遊する、項目1~11のいずれか一つに記載の方法。
[項目13]
溶融金属ハロゲン塩浴および溶融ケイ酸塩を、ケイ酸塩を金属ハロゲン塩浴に添加する前に同じ温度まで加熱する、項目12に記載の方法。
[項目14]
冷却後に金属ハロゲン塩を液体中で溶解し、したがってペレットを取り除くことができる、項目1~13のいずれか一つに記載の方法。
[項目15]
金属ハロゲン塩を水または水溶液または短鎖アルコール中で溶解する、項目14に記載の方法。
Claims (16)
- 化学量論的量の、窒化物、炭化物、ホウ化物または少なくとも1つのMAX相を形成するのに必要な元素を含む元素状出発物質または他の前駆体を、少なくとも1つの金属ハロゲン塩(NZ)と混合し圧縮する、少なくとも1つの窒化物、炭化物、ホウ化物または少なくとも1つの一般組成式Mn+1AXn[式中、
M=遷移元素の群(Sc、Ti、V、Cr、Zr、Nb、Mo、HfおよびTa)からの少なくとも1つの元素、
A=群(Si、Al、Ga、Ge、As、Cd、In、Sn、TlおよびPb)からの少なくとも1つのA群元素、
X=炭素(C)および/または窒素(N)および/またはホウ素(B)および
n=1、2または3]
のMAX相を含む非酸化物セラミック粉末を製造する方法において、
-圧縮したペレット(4)を少なくとも1つの金属ハロゲン塩で被覆し(ummanteln)、再度圧縮し(3)、
-引き続き、金属ハロゲン塩床(NZ)(2)中で加熱し、
加熱を、使用する金属ハロゲン塩の溶融温度より上の温度まで少なくとも行い、
金属ハロゲン塩(NZ)[ここで、N=群(Na、K)からの少なくとも1つの元素およびZ=群(F、Cl、Br、I)からの少なくとも1つの元素]または相応する金属ハロゲン塩の混合物を使用する、
ことを特徴とする、前記方法。 - 出発物質または他の前駆体と、金属ハロゲン塩との混合を、非反応性溶媒中でまたは乾式で行う、請求項1に記載の方法。
- 混合をボールミルで行う、請求項1または2に記載の方法。
- 加熱を、使用する金属ハロゲン塩の溶融温度より上の温度~1400℃までで少なくとも行う、請求項1~3のいずれか一つに記載の方法。
- 金属ハロゲン塩(NZ)として、NaClまたはKBrを使用する、請求項1~4のいずれか一つに記載の方法。
- 元素状出発物質または他の前駆体および少なくとも1つの金属ハロゲン塩を含む混合物を、乾燥混合物として、まず圧縮してペレット(4)にする、請求項1~5のいずれか一つに記載の方法。
- 混合物を、まず一軸方向に圧縮し、引き続き冷間静水圧圧縮してペレット(4)にする、請求項6に記載の方法。
- 圧縮工程に10MPa~1000MPaの圧力を使用する、請求項1~7のいずれか一つに記載の方法。
- 被覆体の圧縮工程に10MPa~1000MPaの圧力を使用する、請求項1~8のいずれか一つに記載の方法。
- 金属ハロゲン塩で被覆した(3)ペレット(4)を、金属ハロゲン塩浴(2)中に配置し、金属ハロゲン塩の溶融温度より上の温度まで共に加熱する、請求項1~9のいずれか一つに記載の方法。
- 金属ハロゲン塩浴の加熱を、酸素の存在下で行う、請求項1~10のいずれか一つに記載の方法。
- ペレット(4)を備える溶融金属ハロゲン塩浴(2)に、付加的に、さらに溶融ケイ酸塩を加えるが、この溶融ケイ酸塩は層として溶融金属ハロゲン塩浴上に浮遊する、請求項1~11のいずれか一つに記載の方法。
- 溶融金属ハロゲン塩浴および溶融ケイ酸塩を、ケイ酸塩を金属ハロゲン塩浴に添加する前に同じ温度まで加熱する、請求項12に記載の方法。
- 冷却後に金属ハロゲン塩を液体中で溶解し、したがってペレットを取り除くことができる、請求項1~13のいずれか一つに記載の方法。
- 金属ハロゲン塩を水または水溶液または短鎖アルコール中で溶解する、請求項14に記載の方法。
- 式中、
M=遷移元素の群(TiおよびCr)からの少なくとも1つの元素、
A=群(SiおよびAl)からの少なくとも1つのA群元素、
である、請求項1~15のいずれか一つに記載の方法。
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| PCT/DE2018/000178 WO2019011358A1 (de) | 2017-07-13 | 2018-06-07 | Verfahren zur herstellung von nicht oxidischen, keramischen pulvern |
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| CN114349014B (zh) * | 2022-01-25 | 2023-11-28 | 吉林大学 | 一种纳米二硼化钛片层粉体的高压熔盐可控制备方法 |
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| KR102685290B1 (ko) * | 2022-06-02 | 2024-07-17 | 주식회사 엘오티아이 | 저산소 맥스 상 합성 방법 |
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| CN115595543B (zh) * | 2022-10-28 | 2024-06-07 | 西安理工大学 | 一种具有MAB相结构的MoAlB陶瓷薄膜及其制备方法 |
| CN116040640B (zh) * | 2023-02-21 | 2024-05-28 | 哈尔滨工业大学 | 一种合成mab相陶瓷粉末的方法 |
| CN117534469A (zh) * | 2023-12-07 | 2024-02-09 | 中国人民解放军陆军装甲兵学院 | 一种钒掺杂四元max相吸波陶瓷及其制备方法与应用 |
| CN117964370B (zh) * | 2024-04-01 | 2024-07-26 | 中国科学技术大学 | 一种高纯度镓系层状碳/氮化物max相材料及其制备方法 |
| CN118771890A (zh) * | 2024-07-23 | 2024-10-15 | 西北工业大学 | 一种多元单相硼化物陶瓷粉体材料及其制备方法和应用 |
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| KR102588091B1 (ko) | 2023-10-16 |
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