JP7510698B2 - ２次元フォトニック結晶面発光レーザ - Google Patents

２次元フォトニック結晶面発光レーザ Download PDF

Info

Publication number
JP7510698B2
JP7510698B2 JP2021542686A JP2021542686A JP7510698B2 JP 7510698 B2 JP7510698 B2 JP 7510698B2 JP 2021542686 A JP2021542686 A JP 2021542686A JP 2021542686 A JP2021542686 A JP 2021542686A JP 7510698 B2 JP7510698 B2 JP 7510698B2
Authority
JP
Japan
Prior art keywords
photonic crystal
refractive index
dimensional photonic
crystal surface
injection region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021542686A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021039316A1 (de
JPWO2021039316A5 (de
Inventor
進 野田
卓也 井上
昌宏 吉田
ゾイサ メーナカ デ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyoto University NUC
Original Assignee
Kyoto University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyoto University NUC filed Critical Kyoto University NUC
Publication of JPWO2021039316A1 publication Critical patent/JPWO2021039316A1/ja
Publication of JPWO2021039316A5 publication Critical patent/JPWO2021039316A5/ja
Application granted granted Critical
Publication of JP7510698B2 publication Critical patent/JP7510698B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
JP2021542686A 2019-08-30 2020-08-04 ２次元フォトニック結晶面発光レーザ Active JP7510698B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019158767 2019-08-30
JP2019158767 2019-08-30
PCT/JP2020/029874 WO2021039316A1 (ja) 2019-08-30 2020-08-04 ２次元フォトニック結晶面発光レーザ

Publications (3)

Publication Number Publication Date
JPWO2021039316A1 JPWO2021039316A1 (de) 2021-03-04
JPWO2021039316A5 JPWO2021039316A5 (de) 2023-06-07
JP7510698B2 true JP7510698B2 (ja) 2024-07-04

Family

ID=74684747

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021542686A Active JP7510698B2 (ja) 2019-08-30 2020-08-04 ２次元フォトニック結晶面発光レーザ

Country Status (5)

Country Link
US (1) US12184036B2 (de)
EP (1) EP4024630B1 (de)
JP (1) JP7510698B2 (de)
CN (1) CN114287089B (de)
WO (1) WO2021039316A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN121816676A (zh) 2023-09-04 2026-04-07 国立大学法人京都大学 二维光子晶体激光器
JP2025169022A (ja) * 2024-04-30 2025-11-12 国立大学法人京都大学 ２次元フォトニック結晶レーザ用パルス電源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1812211A (zh) 2005-01-26 2006-08-02 北京大学 基于二维光子晶体的光二极管及其制备方法
JP2008288558A (ja) 2007-04-20 2008-11-27 Canon Inc 面発光レーザ
JP2009054795A (ja) 2007-08-27 2009-03-12 Yokohama National Univ 半導体レーザ
JP2009231578A (ja) 2008-03-24 2009-10-08 Yokohama National Univ 半導体レーザ
JP2013041948A (ja) 2011-08-12 2013-02-28 Kyoto Univ フォトニック結晶面発光レーザ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6711200B1 (en) * 1999-09-07 2004-03-23 California Institute Of Technology Tuneable photonic crystal lasers and a method of fabricating the same
US7248770B2 (en) * 2003-11-04 2007-07-24 Mesophotonics Limited Photonic band structure devices
JP4594814B2 (ja) * 2004-10-25 2010-12-08 株式会社リコー フォトニック結晶レーザ、フォトニック結晶レーザの製造方法、面発光レーザアレイ、光伝送システム、及び書き込みシステム
JP4294023B2 (ja) * 2005-12-27 2009-07-08 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ光源
JP5070161B2 (ja) * 2007-08-31 2012-11-07 独立行政法人科学技術振興機構 フォトニック結晶レーザ
JP5627361B2 (ja) * 2010-09-16 2014-11-19 キヤノン株式会社 ２次元フォトニック結晶面発光レーザ
JP5721422B2 (ja) 2010-12-20 2015-05-20 キヤノン株式会社 面発光レーザ及びアレイ光源
WO2016031965A1 (ja) * 2014-08-29 2016-03-03 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
JP6865439B2 (ja) * 2015-08-28 2021-04-28 国立大学法人京都大学 ２次元フォトニック結晶面発光レーザ
DE112017001040T8 (de) * 2016-02-29 2019-05-02 Hamamatsu Photonics K.K. Oberflächenemittierender laser mit zweidimensionalem photonischen kristall und verfahren zu seiner herstellung
JP6868864B2 (ja) 2017-03-06 2021-05-12 スタンレー電気株式会社 照明装置
JP6581691B2 (ja) * 2018-05-23 2019-09-25 ローム株式会社 ２次元フォトニック結晶面発光レーザ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1812211A (zh) 2005-01-26 2006-08-02 北京大学 基于二维光子晶体的光二极管及其制备方法
JP2008288558A (ja) 2007-04-20 2008-11-27 Canon Inc 面発光レーザ
JP2009054795A (ja) 2007-08-27 2009-03-12 Yokohama National Univ 半導体レーザ
JP2009231578A (ja) 2008-03-24 2009-10-08 Yokohama National Univ 半導体レーザ
JP2013041948A (ja) 2011-08-12 2013-02-28 Kyoto Univ フォトニック結晶面発光レーザ

Also Published As

Publication number Publication date
US12184036B2 (en) 2024-12-31
EP4024630A4 (de) 2022-11-16
US20220271503A1 (en) 2022-08-25
EP4024630B1 (de) 2024-07-31
CN114287089A (zh) 2022-04-05
JPWO2021039316A1 (de) 2021-03-04
WO2021039316A1 (ja) 2021-03-04
CN114287089B (zh) 2024-04-05
EP4024630A1 (de) 2022-07-06

Similar Documents

Publication Publication Date Title
US12155176B2 (en) Two-dimensional photonic-crystal surface-emitting laser
KR100759603B1 (ko) 수직 공진기형 면발광 레이저 장치
JP5737945B2 (ja) 少なくとも１つの電流バリアを備えた端面発光型半導体レーザチップ
JP6860175B2 (ja) ２次元フォトニック結晶面発光レーザ及びその製造方法
JP7291497B2 (ja) 垂直共振器型発光素子
JP6240429B2 (ja) 面発光型半導体レーザおよび光伝送装置
US7965749B2 (en) Laser diode and method of manufacturing the same
JP7190865B2 (ja) 垂直共振器型発光素子
US20070201527A1 (en) Vertical cavity surface emitting laser
EP3869642B1 (de) Lichtemittierendes element vom vertikalresonatortyp
JPWO2003067724A1 (ja) 半導体発光素子およびその製造方法
JP7510698B2 (ja) ２次元フォトニック結晶面発光レーザ
CN115133399B (zh) 一种半导体激光器及其制备方法
JP5015641B2 (ja) ２次元フォトニック結晶面発光レーザ
US7301977B2 (en) Tuneable unipolar lasers
JP7076572B2 (ja) 光半導体装置および光半導体装置の製造方法
Holc et al. Impact of band structure and absorber dynamics on self-Q-switching in GaN-based multisection laser diodes at high reverse bias
JP2012160524A (ja) 半導体レーザおよびその製造方法
JP7406365B2 (ja) 垂直共振器型発光素子
KR102103515B1 (ko) 레이저 다이오드 구조 및 제조 방법
JP7323211B2 (ja) 半導体レーザ
CN120728362A (zh) 一种面发射激光器
JP2025130228A (ja) ２次元フォトニック結晶レーザ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230530

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20230530

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240411

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240611

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240617