JP7554103B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP7554103B2 JP7554103B2 JP2020198317A JP2020198317A JP7554103B2 JP 7554103 B2 JP7554103 B2 JP 7554103B2 JP 2020198317 A JP2020198317 A JP 2020198317A JP 2020198317 A JP2020198317 A JP 2020198317A JP 7554103 B2 JP7554103 B2 JP 7554103B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7606—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
- H10P72/0418—Apparatus for fluid treatment for etching
- H10P72/0422—Apparatus for fluid treatment for etching for wet etching
- H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7608—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Polarising Elements (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
すなわち、従来の装置は、平面視で回転台の外周側に配置されている複数本の支持ピンと、平面視で回転台の中心部に配置されている回転軸との導通を図る必要がある。そのためには、例えば、回転台を導電性の材料で構成することにより、支持ピンと回転軸との導通を図ることができる。
すなわち、請求項1に記載の発明は、基板に対して所定の処理を行う基板処理装置において、鉛直軸周りに回転可能に構成された回転台と、前記回転台の中心部に連結され、接地された回転軸を備え、前記回転台を水平面内で回転駆動する回転駆動手段と、前記回転台の外周側における上面に設けられ、導電性の材料からなる複数本の支持ピンを備え、前記回転台の上面から基板を離間した状態で水平姿勢に保持する保持機構と、導電性を備え、前記回転台の一部を構成し、前記複数本の支持ピンと前記回転軸とを電気的に接続したグラウンド線と、を備え、前記グラウンド線は、前記回転台の下面に埋設され、前記回転台は、前記支持ピンから前記回転軸に向かって長軸を有する溝が形成され、前記溝は、前記長軸に直交する短軸における縦断面において、上底が下底より長く形成された台形状を呈し、前記グラウンド線は、前記短軸における縦断面が前記溝に応じた形状を呈していることを特徴とするものである。
また、基板を処理する処理液が回り込みにくくできる。また、処理液が回り込んだとしても、落下させ易くできる。したがって、処理に伴う処理液の付着に起因する不都合を抑制できる。
また、グラウンド線を埋設するので、回転台の下面における凹凸を少なくできる。したがって、回転台の回転に伴う乱流を抑制できる。
また、ネジ等による物理力を用いることなく、グラウンド線を回転台に溝を介して取り付けることができる。したがって、樹脂等に生じやすい、荷重をかけると時間とともに変形していく現象(クリープ現象と呼ばれる)を防止できる。
1 … ベースユニット
3 … チャックユニット
5 … 飛散防止カップ
7 … 供給ノズル
9 … 制御部
11 … 電動モータ
13 … 切り換え機構
15 … カバー
17 … 回転軸
23 … 回転台
25 … 保持機構
27 … 固定ピン
29 … 可動ピン
31 … 貫通口
33 … 切り欠き部
35 … 下部ピン部
37 … 上部ピン部
37a … 軸部
37b … 支持片
37d … 傾斜面
41 … ピンカバー
43 … グラウンド線
47 … 下部ピン部
47c … 回転マグネット
49 … 上部ピン部
49a … 軸部
49b … 支持片
49d … 傾斜面
53 … 支持プレート
57 … 固定マグネット
59 … エアシリンダ
63 … 駆動マグネット
Claims (4)
- 基板に対して所定の処理を行う基板処理装置において、
鉛直軸周りに回転可能に構成された回転台と、
前記回転台の中心部に連結され、接地された回転軸を備え、前記回転台を水平面内で回転駆動する回転駆動手段と、
前記回転台の外周側における上面に設けられ、導電性の材料からなる複数本の支持ピンを備え、前記回転台の上面から基板を離間した状態で水平姿勢に保持する保持機構と、
導電性を備え、前記回転台の一部を構成し、前記複数本の支持ピンと前記回転軸とを電気的に接続したグラウンド線と、
を備え、
前記グラウンド線は、前記回転台の下面に埋設され、
前記回転台は、前記支持ピンから前記回転軸に向かって長軸を有する溝が形成され、
前記溝は、前記長軸に直交する短軸における縦断面において、上底が下底より長く形成された台形状を呈し、
前記グラウンド線は、前記短軸における縦断面が前記溝に応じた形状を呈していることを特徴とする基板処理装置。 - 請求項1に記載の基板処理装置において、
前記複数本の支持ピンは、
PEEK(ポリエーテルエーテルケトン)材にカーボンナノチューブを配合した材料で構成されていることを特徴とする基板処理装置。 - 請求項1または2に記載の基板処理装置において、
前記グラウンド線は、前記回転台の面方向に薄く形成された板状部材であることを特徴とする基板処理装置。 - 請求項1から3のいずれかに記載の基板処理装置において、
前記複数本の支持ピンは、少なくとも4本であり、
前記グラウンド線は、平面視において十字型を形成し、前記複数本の支持ピンのうち4本に接続されていることを特徴とする基板処理装置。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020198317A JP7554103B2 (ja) | 2020-11-30 | 2020-11-30 | 基板処理装置 |
| US17/524,798 US12278135B2 (en) | 2020-11-30 | 2021-11-12 | Substrate treating apparatus |
| TW110142905A TWI806245B (zh) | 2020-11-30 | 2021-11-18 | 基板處理裝置 |
| KR1020210166812A KR102665573B1 (ko) | 2020-11-30 | 2021-11-29 | 기판 처리 장치 |
| CN202111461026.2A CN114582784B (zh) | 2020-11-30 | 2021-11-30 | 衬底处理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020198317A JP7554103B2 (ja) | 2020-11-30 | 2020-11-30 | 基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022086363A JP2022086363A (ja) | 2022-06-09 |
| JP7554103B2 true JP7554103B2 (ja) | 2024-09-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020198317A Active JP7554103B2 (ja) | 2020-11-30 | 2020-11-30 | 基板処理装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12278135B2 (ja) |
| JP (1) | JP7554103B2 (ja) |
| KR (1) | KR102665573B1 (ja) |
| CN (1) | CN114582784B (ja) |
| TW (1) | TWI806245B (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102561219B1 (ko) * | 2021-08-24 | 2023-07-28 | (주)디바이스이엔지 | 기판 처리장치용 기판 지지 조립체 |
| KR102535757B1 (ko) | 2021-08-24 | 2023-05-26 | (주)디바이스이엔지 | 기판 처리장치용 기판 지지 조립체 |
| US12568786B2 (en) * | 2023-05-26 | 2026-03-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Processing tool and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231176A (ja) | 2001-01-31 | 2002-08-16 | Hitachi Ltd | イオン注入機 |
| JP2009010275A (ja) | 2007-06-29 | 2009-01-15 | Dainichi Shoji Kk | ウエハ吸着板及びその製作方法 |
| JP2013526018A (ja) | 2010-04-16 | 2013-06-20 | ラム・リサーチ・アーゲー | 接地されたチャック |
| JP2014130901A (ja) | 2012-12-28 | 2014-07-10 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
| US20160197000A1 (en) | 2015-01-06 | 2016-07-07 | Samsung Electronics Co., Ltd. | Single-wafer-type cleaning apparatus |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4213698A (en) * | 1978-12-01 | 1980-07-22 | Bell Telephone Laboratories, Incorporated | Apparatus and method for holding and planarizing thin workpieces |
| JP3492107B2 (ja) * | 1996-09-09 | 2004-02-03 | 大日本スクリーン製造株式会社 | 回転式現像装置 |
| JP2004303836A (ja) | 2003-03-28 | 2004-10-28 | Tokyo Electron Ltd | 基板処理装置 |
| KR100483757B1 (ko) * | 2003-03-31 | 2005-04-19 | 지이티 주식회사 | 용접물 클램핑장치 |
| JP2005072559A (ja) | 2003-08-05 | 2005-03-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| KR20050070705A (ko) * | 2003-12-30 | 2005-07-07 | 동부아남반도체 주식회사 | 스핀 스크러버 장비의 접지장치 |
| US7547181B2 (en) * | 2004-11-15 | 2009-06-16 | Dainippon Screen Mfg. Co., Ltd. | Substrate position correcting method and apparatus using either substrate radius or center of rotation correction adjustment sum |
| JP2008016660A (ja) * | 2006-07-06 | 2008-01-24 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| CN101896879B (zh) * | 2007-12-14 | 2013-05-29 | 株式会社爱发科 | 触摸面板、触摸面板的制造方法 |
| KR20110096852A (ko) * | 2010-02-23 | 2011-08-31 | 세메스 주식회사 | 기판 회전 장치 |
| US10192771B2 (en) * | 2015-09-29 | 2019-01-29 | SCREEN Holdings Co., Ltd. | Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method |
| JP6691836B2 (ja) | 2016-06-20 | 2020-05-13 | 株式会社Screenホールディングス | 基板処理装置 |
| JP6712939B2 (ja) * | 2016-06-20 | 2020-06-24 | 東京エレクトロン株式会社 | 静電容量測定用の測定器、及び、測定器を用いて処理システムにおける搬送位置データを較正する方法 |
| JP7281868B2 (ja) * | 2018-01-23 | 2023-05-26 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
| KR102097009B1 (ko) | 2018-06-11 | 2020-05-28 | 세메스 주식회사 | 스핀척 및 기판처리장치 |
| JP7308048B2 (ja) * | 2019-02-15 | 2023-07-13 | 株式会社Screenホールディングス | 液処理装置および液処理方法 |
-
2020
- 2020-11-30 JP JP2020198317A patent/JP7554103B2/ja active Active
-
2021
- 2021-11-12 US US17/524,798 patent/US12278135B2/en active Active
- 2021-11-18 TW TW110142905A patent/TWI806245B/zh active
- 2021-11-29 KR KR1020210166812A patent/KR102665573B1/ko active Active
- 2021-11-30 CN CN202111461026.2A patent/CN114582784B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002231176A (ja) | 2001-01-31 | 2002-08-16 | Hitachi Ltd | イオン注入機 |
| JP2009010275A (ja) | 2007-06-29 | 2009-01-15 | Dainichi Shoji Kk | ウエハ吸着板及びその製作方法 |
| JP2013526018A (ja) | 2010-04-16 | 2013-06-20 | ラム・リサーチ・アーゲー | 接地されたチャック |
| JP2014130901A (ja) | 2012-12-28 | 2014-07-10 | Tokyo Electron Ltd | 液処理装置及び液処理方法 |
| US20160197000A1 (en) | 2015-01-06 | 2016-07-07 | Samsung Electronics Co., Ltd. | Single-wafer-type cleaning apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20220076369A (ko) | 2022-06-08 |
| US20220172979A1 (en) | 2022-06-02 |
| KR102665573B1 (ko) | 2024-05-14 |
| TW202226443A (zh) | 2022-07-01 |
| TWI806245B (zh) | 2023-06-21 |
| US12278135B2 (en) | 2025-04-15 |
| JP2022086363A (ja) | 2022-06-09 |
| CN114582784B (zh) | 2025-11-14 |
| CN114582784A (zh) | 2022-06-03 |
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