JPH01101100A - Thin film array ultrasonic converter - Google Patents
Thin film array ultrasonic converterInfo
- Publication number
- JPH01101100A JPH01101100A JP62257223A JP25722387A JPH01101100A JP H01101100 A JPH01101100 A JP H01101100A JP 62257223 A JP62257223 A JP 62257223A JP 25722387 A JP25722387 A JP 25722387A JP H01101100 A JPH01101100 A JP H01101100A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- array ultrasonic
- matching layer
- ultrasonic transducer
- film array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims description 35
- 239000000758 substrate Substances 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 7
- 239000005350 fused silica glass Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 235000011389 fruit/vegetable juice Nutrition 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003325 tomography Methods 0.000 description 1
Landscapes
- Ultra Sonic Daignosis Equipment (AREA)
- Transducers For Ultrasonic Waves (AREA)
- Investigating Or Analyzing Materials By The Use Of Ultrasonic Waves (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は超音波変換器に係り、特に微細な構造を非破壊
で観察するのに好適な薄膜アレイ超音波変換器に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an ultrasonic transducer, and particularly to a thin film array ultrasonic transducer suitable for nondestructively observing fine structures.
従来、超音波断層装置には周波数１〜１０ＭＨｚの超音
波を送受するアレイセンサが使用されている。しかし最
近では、半導体のパッケージ検査や材料の欠陥検査など
、より＊、Ｗな構造を見る必要ができており、そのため
には周波数５０〜１００ＭＨｚの高周波超音波を用いて
分解能を向上させる必要がある。この領域の超音波を送
受する圧電体は厚さ５０μｍ以下となるため、薄膜とし
て形成された圧電体を使用する。Conventionally, an array sensor that transmits and receives ultrasonic waves with a frequency of 1 to 10 MHz has been used in an ultrasonic tomography apparatus. However, recently, it has become necessary to see more *W structures, such as in semiconductor package inspection and material defect inspection, and to do so, it is necessary to improve the resolution using high-frequency ultrasonic waves with a frequency of 50 to 100 MHz. . Since the piezoelectric material that transmits and receives ultrasonic waves in this region has a thickness of 50 μm or less, a piezoelectric material formed as a thin film is used.
従来、この薄膜超音波変換器は、曝−の変換部として形
成され、機械的に平面内で走査して情報を得、画像を構
成する方法がとられている。この方法を利用した超音波
顕微鏡については「固体物Ｊ！］！Ｊ １７ （１９８
２年）第５工頁から第５７頁において論じられている。Conventionally, this thin film ultrasonic transducer is formed as an exposure converter, and a method has been adopted in which it mechanically scans within a plane to obtain information and construct an image. Regarding ultrasound microscopy using this method, see “Solid Objects J!]!J 17 (198
2) Discussed on pages 5 to 57.
０
〔発明が解決しようとする間層点〕
上記従来技術においては、超音波は圧電薄膜の形成され
ている基板をレンズとし、このレンズを介して放射され
ており、通常音ｌＦｌ！整合層が設けられていない。こ
れに対してアレイ変換器の場合には、各素子間の電気的
１機械的分離を良くするためにアレイ状にした圧電薄膜
側から直接音を放出させる方式が有利と考えられる。そ
の場合、圧電薄膜と超音波の伝播媒体（例えば水）との
マツチングをとるための音響整合層を必要とする。0 [Interlayer point to be solved by the invention] In the above-mentioned conventional technology, the ultrasonic wave is emitted through the lens using the substrate on which the piezoelectric thin film is formed, and the normal sound lFl! No matching layer is provided. On the other hand, in the case of an array transducer, it is considered advantageous to emit sound directly from the piezoelectric thin film side arranged in an array in order to improve electrical and mechanical separation between each element. In that case, an acoustic matching layer is required to match the piezoelectric thin film and the ultrasonic propagation medium (eg, water).
数ＭＨｚ帯の超音波アレイ変換器では１通常セラミック
スを所望の厚み９幅に研磨、切断した後。For ultrasonic array transducers in the several MHz band, 1. Normally, ceramics are polished and cut to the desired thickness and width.
上記音響整合層を形成している。この音響整合層は切断
せずに用いられる場合もあるが、素子間の分離を良くす
るためには分離した方が良い。しかも、数１０ＭＨｚ以
上の超音波を送受するプレイ変換器の場合には１つのエ
レメントの幅も小さくなり、整合層の分離は必須である
。The above acoustic matching layer is formed. Although this acoustic matching layer may be used without being cut, it is better to separate it in order to improve separation between elements. Moreover, in the case of a play transducer that transmits and receives ultrasonic waves of several tens of MHz or more, the width of one element becomes small, and separation of matching layers is essential.
しかしながら、従来の方法に準じて、薄膜圧電体をエツ
チングにより分割した後、音響整合層を形成し、さらに
これをエツチングして分割する方法では、パターンの合
わせ精度も高く要求され、また工程も多くなる。これま
で、厚み縦振動を利用した薄膜アレイ変換器については
具体的な報告例がなく、音響整合層まで含めた変換器を
構成する上での問題点に配慮がなされていなかった。However, according to the conventional method, a thin film piezoelectric material is divided by etching, an acoustic matching layer is formed, and this is further divided by etching. This method requires high pattern alignment accuracy and requires many steps. Become. Until now, there have been no specific reports on thin film array transducers that utilize thickness longitudinal vibration, and no consideration has been given to the problems involved in constructing a transducer that includes an acoustic matching layer.
本発明の目的は、少ない工程で形成可能な薄膜アレイ変
換器を提供することにある。An object of the present invention is to provide a thin film array transducer that can be formed with fewer steps.
上記目的、基板上に形成された圧電薄膜、さらにその上
に形成された上部電極よりなる超音波変換塁上、先に音
響整合層を形成した後、音響整合層、上部電極、圧電薄
膜を順次エツチングすることにより達成される。For the above purpose, on an ultrasonic conversion base consisting of a piezoelectric thin film formed on a substrate and an upper electrode formed on top of it, an acoustic matching layer is first formed, and then an acoustic matching layer, an upper electrode, and a piezoelectric thin film are sequentially formed. This is achieved by etching.
薄膜アレイ超音波変換器を作成するには、−様に形成さ
れた変換器を分割する必要がある。しかし、１つ１つの
変換器の大きさが１０μｍのオーダになるため１分割を
行うためにはフォトリソグラフィ技術及びエツチングの
技術を必要とする。To create a thin film array ultrasound transducer, it is necessary to split the otherwise formed transducer. However, since the size of each converter is on the order of 10 μm, photolithography and etching techniques are required to perform one division.
超音波変換器を構成している圧電薄膜、電極、音響整合
層をエツチングする場合、各々適当なエツチング液を選
択する必要があり、それとともにエツチング液に対する
耐性の有る材料でマスクを形成する。When etching the piezoelectric thin film, electrode, and acoustic matching layer constituting the ultrasonic transducer, it is necessary to select an appropriate etching solution for each, and at the same time, a mask is formed of a material that is resistant to the etching solution.
本発明になる薄膜アレイ超音波変換器では、音響整合層
まで先に形成した後、各々その上に設けられた層をマス
クとして順次エツチングすることを特徴としている。ま
ず、フォトリソグラフィーで形成されたレジストパター
ンをマスクとして音響整合層をエツチングし１次の電極
層及び圧電薄膜はバターニングされた音Ｗ整合層をマス
クとしてエツチングを行う。これにより、フォトリソグ
ラフィーによるパターニングは１回で済み、工程を少な
くすることが可能となる。The thin film array ultrasonic transducer according to the present invention is characterized in that after forming up to the acoustic matching layer first, the layers provided thereon are sequentially etched using the layers provided thereon as masks. First, the acoustic matching layer is etched using a resist pattern formed by photolithography as a mask, and the primary electrode layer and piezoelectric thin film are etched using the patterned acoustic W matching layer as a mask. As a result, patterning by photolithography only needs to be performed once, making it possible to reduce the number of steps.
以下１本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図は、本発明になる薄膜アレイ超音波変換器を示し
、ａは平面図、ｂは断面図を示している。FIG. 1 shows a thin film array ultrasonic transducer according to the present invention, in which a is a plan view and b is a cross-sectional view.
同図において１は石英ガラス基板、２はクロム（Ｃｒ）
・金（Ａｕ）ｉｌを極、３及び３−１〜３−ｎは酸化亜
鉛（ＺｎＯ）＊膜、４及び４−１〜４−ｎは、アル゛ミ
ニウム（ＡＱ）電極、５及び５−１〜５−ｎは５ｉ０２
からなる音響整合層である。In the same figure, 1 is a quartz glass substrate, 2 is chromium (Cr)
・Gold (Au) il electrodes, 3 and 3-1 to 3-n are zinc oxide (ZnO)* films, 4 and 4-1 to 4-n are aluminum (AQ) electrodes, 5 and 5- 1-5-n is 5i02
This is an acoustic matching layer consisting of.
第１図に示した超音波変換器の作成手順を第２図により
説明する。まず１石英ガラス基板ｌｌ上に２２０℃でク
ロミウム（Ｃｒ）及び金（Ａ ｕ ）蒸着し、下部電極
１２を形成する（同図ａ）。次に高周波マグネトロンス
パッタ法により、膜厚３０μｍの酸化亜鉛薄１１１１３
を形成する（同図ｂ）。The procedure for creating the ultrasonic transducer shown in FIG. 1 will be explained with reference to FIG. 2. First, chromium (Cr) and gold (A u ) are vapor-deposited onto a quartz glass substrate 11 at 220° C. to form a lower electrode 12 (a in the same figure). Next, a thin film of zinc oxide 11113 with a thickness of 30 μm was formed by high-frequency magnetron sputtering.
(Figure b).
スパッタ条件は、パワー７５Ｗで基板温度２２０℃、ア
ルゴン（Ａｒ）−酸素（０２）（５０％−５０％）導入
ガスのガス圧を３Ｐａ （パスカル）とした。The sputtering conditions were a power of 75 W, a substrate temperature of 220° C., and a gas pressure of argon (Ar)-oxygen (02) (50%-50%) introduced gas of 3 Pa (Pascal).
上記の薄膜１３上に、室温でアルミニウム（ＡＱ）を蒸
着し、上部電極１４を形成する（同図ｃ）、さらに、高
周波マグネトロンスパッタ法により膜厚約１５μｍの酸
化シリコン（ＳｉＯ２）膜を音響整合Ｍ！ｊ１５として
形成する（同図ｄ）。Aluminum (AQ) is vapor-deposited on the thin film 13 at room temperature to form the upper electrode 14 (see figure c). Furthermore, a silicon oxide (SiO2) film with a thickness of approximately 15 μm is acoustically matched by high-frequency magnetron sputtering. M! j15 (d in the same figure).
スパッタ条件はパワー２００Ｗで、基板温度２００℃、
アルゴン（Ａｒ）−酸素（９０％−１０％）導入ガスの
ガス圧を５Ｐａとした。この条件でスパッタ時間は７時
間である。The sputtering conditions were a power of 200W, a substrate temperature of 200℃,
The gas pressure of the argon (Ar)-oxygen (90%-10%) introduced gas was 5 Pa. Under these conditions, the sputtering time was 7 hours.
上記の一様な多層膜をアレイ変換器に加工するため、以
下のようにエツチングを行う。まず、フォトリソグラフ
ィ技術を用いて、ピッチ６０μｍ、エレメント幅５０μ
ｍ、溝幅１０μｍ、短軸方向の長さ１ｍｍのレジストパ
ターン１６−１〜１６− ｎを形成する（同図８）、こ
のレジストパターンをマスクとして、フッ酸（ＨＦ）及
びフッ化アンモニウム（’Ｎ Ｈ３Ｆ ）の混合液（混
合比ｌ：６）中で１時間エツチングを行い、酸化シリコ
ン膜１５をパターニングする（同図ｆ）、レジストを除
去した後、パターニングされた酸化シリコン膜１５をマ
スクとしてアルミニウムのエツチング液（リン酸、硝酸
、氷酢酸、水＝７５：５：１５：５の混合液）中で２分
間エツチングを行い、アルミニウム膜１４をパターニン
グする（同図ｇ）。In order to process the above uniform multilayer film into an array transducer, etching is performed as follows. First, using photolithography technology, the pitch was 60 μm and the element width was 50 μm.
Resist patterns 16-1 to 16-n with a groove width of 10 μm and a length of 1 mm in the minor axis direction are formed (FIG. 8). Using this resist pattern as a mask, hydrofluoric acid (HF) and ammonium fluoride (' The silicon oxide film 15 is patterned by etching for 1 hour in a mixed solution of N H3F (mixing ratio 1:6) (f in the same figure). After removing the resist, the patterned silicon oxide film 15 is used as a mask. Etching is performed for 2 minutes in an aluminum etching solution (a mixture of phosphoric acid, nitric acid, glacial acetic acid, and water = 75:5:15:5) to pattern the aluminum film 14 (see g in the figure).
さらに、２％の塩酸水溶液中で５分間エツチングを行い
酸化亜鉛薄膜１３をパターニングする（同（ｉ２１ｈ）
、最後に、各素子からのリード線引出し部となる上部
電極１４−１．２．・・・、ｎの一部を露出させるため
、その上の整合層を除去する。Furthermore, the zinc oxide thin film 13 is patterned by etching in a 2% hydrochloric acid aqueous solution for 5 minutes (same (i21h)).
, and finally, upper electrodes 14-1.2, which serve as lead wire extraction parts from each element. . . ., the matching layer thereon is removed to expose a portion of n.
以上のようにして、第１図に示した薄膜アレイ変換器が
構成される。この方法では、微細パターンの形成が１回
で済むため、マスク合わせの精度も必要としない、この
変換器の下部電極及び上部電極４−１〜４−ｎよりワイ
ヤボンディングによりリード線を引出す。In the manner described above, the thin film array transducer shown in FIG. 1 is constructed. In this method, since the fine pattern is formed only once, precision in mask alignment is not required.Lead wires are drawn out from the lower electrodes and upper electrodes 4-1 to 4-n of this converter by wire bonding.
この状態において、下部電極、酸化亜鉛薄膜３−１〜３
− ｎ 、上部電極４−１〜４− ｎ 、音響整合層５
−１〜５−ｎより成るｎ個のエレメントを複数個ずつま
とめ、各々に中心部はど遅れた位相差を与えて駆動して
音波を放射させ、そのビームの測定を行ったところ、ア
レイの配列方向に鋭いビーム形状となった。さらに複数
ごとに順次切換えて駆動することによりビームを走査で
きることが確認できた。これはエツチングにより各エレ
メントが分離され、独立に動作できるためである。In this state, the lower electrode, zinc oxide thin film 3-1 to 3
-n, upper electrodes 4-1 to 4-n, acoustic matching layer 5
When a plurality of n elements consisting of -1 to 5-n were grouped together, each was driven with a delayed phase difference at the center to emit a sound wave, and the beam was measured. The beam has a sharp shape in the array direction. Furthermore, it was confirmed that the beam could be scanned by sequentially switching and driving multiple units. This is because each element is separated by etching and can operate independently.
第３図は１本発明の第２実施例である薄膜アレイ変換器
の平面および断面を示す図である。第３図において、２
１は基板、２２−１〜２２−ｎは下部電極２３−１〜２
３− ｎは酸化亜鉛（ＺｎＯ）薄膜、２４−１〜２４−
ｎはアルミニウム（ＡＱ）膜、２５は金膜、２６−１〜
２６−ｎは溶融石英（ＳｉＯｓ＋）膜である。FIG. 3 is a plan view and a cross-sectional view of a thin film array transducer according to a second embodiment of the present invention. In Figure 3, 2
1 is a substrate, 22-1 to 22-n are lower electrodes 23-1 to 2
3-n is a zinc oxide (ZnO) thin film, 24-1 to 24-
n is aluminum (AQ) film, 25 is gold film, 26-1~
26-n is a fused silica (SiOs+) film.
このアレイ変換器の製作は、前述の第１の実施例とほぼ
同様にして行う。但し、この第２の実施例においては下
部電極が各素子を分離している電極であり、上部電極が
共通電極となっている点が異なる。まず石英ガラス基板
１上にクロム（Ｃｒ）及び金（Ａ ｕ ）よりなる電極
を形成し、素子幅と同じかそれより広い幅を有する部分
２２−１〜２２−ｎに分割する。この上に酸化亜鉛（Ｚ
ｎＯ）薄１１１２３．アルミニウム（ＡＱ）電極２４を
形成する。さらにその一部を金（Ａｕ）膜２５で覆う。This array transducer is manufactured in substantially the same manner as in the first embodiment described above. However, this second embodiment differs in that the lower electrode is an electrode that separates each element, and the upper electrode is a common electrode. First, an electrode made of chromium (Cr) and gold (Au) is formed on a quartz glass substrate 1, and is divided into portions 22-1 to 22-n each having a width equal to or wider than the device width. On top of this, zinc oxide (Z
nO) Thin 11123. An aluminum (AQ) electrode 24 is formed. Furthermore, a part of it is covered with a gold (Au) film 25.
この金膜はアルミニウムをエツチングする際のマスクの
役割を果たす。さらにアルミニウム膜上に溶融石英（Ｓ
ｉＯｚ）膜２６を形成し、下部電極２２−１〜２２−ｎ
と位置合わせをして、ピッチ６０μｍ２幅５０μｍ、長
さ１ｍｍのライン状レジストパターンを形成し、以下第
１の実施例と同様に順次エツチングを行えば良い。この
方法では溶融石英膜２６を２度に分けてエツチングする
必要がない。また、基板上に形成された下部電極がリー
ド線引出しの際のポンディングパッドとなり、充分な強
度が得られるという利点がある。This gold film serves as a mask when etching aluminum. Furthermore, fused silica (S) is placed on the aluminum film.
iOz) film 26 is formed, and the lower electrodes 22-1 to 22-n
A line-shaped resist pattern having a pitch of 60 μm, a width of 50 μm, and a length of 1 mm is formed by aligning the pattern with the resist pattern, and then etching is performed sequentially in the same manner as in the first embodiment. This method eliminates the need to etch the fused silica film 26 twice. Further, the lower electrode formed on the substrate serves as a bonding pad when drawing out lead wires, and there is an advantage that sufficient strength can be obtained.
以上説明したように、本発明によれば、音？［金層まで
一様に形成した後、順次エツチングを行っているので、
フォトリソグラフィーによる微細パターンの形成が１回
で済み、アレイ変換器の作成工程を少なくすることが可
能である。As explained above, according to the present invention, sound? [After uniformly forming the gold layer, etching is performed sequentially, so
Formation of a fine pattern by photolithography only needs to be done once, and it is possible to reduce the number of steps for creating an array converter.
第１図は本発明の実施例である超音波薄膜アレイ変換器
の平面図（ａ）及び断面図（ｂ）、第２図は本発明の超
音波変換器の作成手順を示す加工工程断面図、第３図は
本発明の他の実施例である超音波薄膜アレイ変換器の平
面図（ａ）及び断面図（ｂ）である。
１．１１．’２１・・・基板、２，１２，２２・・・下
部電極、３，１３．２３・・・酸化亜鉛薄膜、４．１４
・・・上部電極、５，１５．２６・・・音響整合層、２
４・・・アルミニウム膜、２５・・・金膜。
肯 １１！１
汁 ２ 図FIG. 1 is a plan view (a) and a cross-sectional view (b) of an ultrasonic thin film array transducer according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the processing steps showing the steps for manufacturing the ultrasonic transducer of the present invention. , FIG. 3 is a plan view (a) and a cross-sectional view (b) of an ultrasonic thin film array transducer according to another embodiment of the present invention. 1.11. '21...Substrate, 2,12,22...Lower electrode, 3,13.23...Zinc oxide thin film, 4.14
... Upper electrode, 5, 15.26 ... Acoustic matching layer, 2
4... Aluminum film, 25... Gold film. Confirmation 11!1 Juice 2 Diagram
Claims (5)
膜、該薄膜上に形成された上部電極、および該上部電極
上に形成された音響整合層より成る素子を多数配列した
薄膜アレイ超音波変換器において、音響整合層まで含め
た上記素子を基板上に一様に形成した後、順次アレイ状
にエッチングしたことを特徴とする薄膜アレイ超音波変
換器。1. A thin film array ultrasonic transducer in which a large number of elements each consisting of a thin film made of a piezoelectric material, an upper electrode formed on the thin film, and an acoustic matching layer formed on the upper electrode are arranged on a substrate on which a lower electrode is formed. 1. A thin film array ultrasonic transducer characterized in that the above elements including an acoustic matching layer are uniformly formed on a substrate and then sequentially etched in an array shape.
特徴とする特許請求の範囲第１項記載の薄膜アレイ超音
波変換器。2. 2. The thin film array ultrasonic transducer according to claim 1, wherein zinc oxide (ZnO) is used for the piezoelectric material.
ることを特徴とする特許請求の範囲第１項記載の薄膜ア
レイ超音波変換器。3. 2. The thin film array ultrasonic transducer according to claim 1, wherein fused silica (SiO_2) is used for the acoustic matching layer.
特徴とする特許請求の範囲第２項記載の薄膜アレイ超音
波変換器。4. 3. The thin film array ultrasonic transducer according to claim 2, wherein fused silica (SiO_2) is used for the substrate.
る特許請求の範囲第２項記載の薄膜アレイ超音波変換器
。5. 3. The thin film array ultrasonic transducer according to claim 2, wherein Al_2O_3 is used for the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62257223A JP2620945B2 (en) | 1987-10-14 | 1987-10-14 | Manufacturing method of thin film array ultrasonic transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62257223A JP2620945B2 (en) | 1987-10-14 | 1987-10-14 | Manufacturing method of thin film array ultrasonic transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01101100A true JPH01101100A (en) | 1989-04-19 |
| JP2620945B2 JP2620945B2 (en) | 1997-06-18 |
Family
ID=17303377
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62257223A Expired - Lifetime JP2620945B2 (en) | 1987-10-14 | 1987-10-14 | Manufacturing method of thin film array ultrasonic transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2620945B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5038068A (en) * | 1988-12-09 | 1991-08-06 | Hitachi Construction Machinery Co., Ltd. | Thin film pattern and method of forming the same |
| US7726192B2 (en) | 2006-10-04 | 2010-06-01 | Denso Corporation | Ultrasonic sensor |
| CN111559734A (en) * | 2020-05-20 | 2020-08-21 | 内江师范学院 | Manufacturing method of multi-frequency CMUT device and multi-frequency CMUT device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60128769A (en) * | 1983-12-16 | 1985-07-09 | Nippon Telegr & Teleph Corp <Ntt> | Communication conference device |
| JPS6115500A (en) * | 1984-07-02 | 1986-01-23 | Tdk Corp | Manufacture of ultrasonic probe |
-
1987
- 1987-10-14 JP JP62257223A patent/JP2620945B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60128769A (en) * | 1983-12-16 | 1985-07-09 | Nippon Telegr & Teleph Corp <Ntt> | Communication conference device |
| JPS6115500A (en) * | 1984-07-02 | 1986-01-23 | Tdk Corp | Manufacture of ultrasonic probe |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5038068A (en) * | 1988-12-09 | 1991-08-06 | Hitachi Construction Machinery Co., Ltd. | Thin film pattern and method of forming the same |
| US7726192B2 (en) | 2006-10-04 | 2010-06-01 | Denso Corporation | Ultrasonic sensor |
| CN111559734A (en) * | 2020-05-20 | 2020-08-21 | 内江师范学院 | Manufacturing method of multi-frequency CMUT device and multi-frequency CMUT device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2620945B2 (en) | 1997-06-18 |
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