JPH01101339A - Production of silicon dioxide-coated acrylic resin form - Google Patents
Production of silicon dioxide-coated acrylic resin formInfo
- Publication number
- JPH01101339A JPH01101339A JP62260161A JP26016187A JPH01101339A JP H01101339 A JPH01101339 A JP H01101339A JP 62260161 A JP62260161 A JP 62260161A JP 26016187 A JP26016187 A JP 26016187A JP H01101339 A JPH01101339 A JP H01101339A
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- film
- acrylic resin
- coating
- resin molded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 69
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 69
- 239000004925 Acrylic resin Substances 0.000 title claims abstract description 42
- 229920000178 Acrylic resin Polymers 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000000576 coating method Methods 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 55
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 42
- 239000002253 acid Substances 0.000 claims abstract description 17
- -1 methacryloxy Chemical group 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 7
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 5
- 125000003668 acetyloxy group Chemical group [H]C([H])([H])C(=O)O[*] 0.000 claims abstract description 3
- 125000000962 organic group Chemical group 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 40
- 239000007788 liquid Substances 0.000 claims description 18
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 125000005083 alkoxyalkoxy group Chemical group 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000005647 linker group Chemical group 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 229910020487 SiO3/2 Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 75
- 238000000034 method Methods 0.000 description 23
- 239000000243 solution Substances 0.000 description 20
- 229920003023 plastic Polymers 0.000 description 13
- 239000004033 plastic Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 9
- 238000001556 precipitation Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 4
- 239000004327 boric acid Substances 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920000298 Cellophane Polymers 0.000 description 2
- 108010009736 Protein Hydrolysates Proteins 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000007602 hot air drying Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000005372 silanol group Chemical group 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000004964 aerogel Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- LRCFXGAMWKDGLA-UHFFFAOYSA-N dioxosilane;hydrate Chemical compound O.O=[Si]=O LRCFXGAMWKDGLA-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Manufacturing Optical Record Carriers (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は二酸化珪素被覆アクリル樹脂成形体の製造方法
に係り、特に表面に微細な凹凸を持った光デイスク基板
用アクリル円盤等のアクリル樹脂成形体表面に、該表面
凹凸を維持することができ、かつ、耐久性に優れた均一
厚さの二酸化珪素被膜を形成することができる二酸化珪
素被膜の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for producing a silicon dioxide-coated acrylic resin molded body, and particularly to acrylic resin molding such as an acrylic disk for an optical disk substrate having fine irregularities on the surface. The present invention relates to a method for producing a silicon dioxide film that can maintain the surface irregularities and form a highly durable and uniformly thick silicon dioxide film on a body surface.
[従来の技術]
光を利用したメモリ材の使用基板には、透明性が要求さ
れる。透明なディスク素材としては、ガラス又は透明プ
ラスチックが使用される可能性が高い。ディスク材料と
してのガラス、プラスチックは、それぞれ長所、欠点を
持ち、材料選定が困難であるが、成形加工性、安全性、
製造コストの面で、プラスチックがより優れているとみ
なされる。[Prior Art] Transparency is required for substrates using light-based memory materials. Glass or transparent plastic is likely to be used as the transparent disc material. Glass and plastic as disc materials each have their own advantages and disadvantages, making material selection difficult.
Plastic is considered superior in terms of manufacturing costs.
ただし、PMMA、PC等のプラスチックは、通気性や
透水性が良好であるため、反りの原因となったり、ディ
スク基板として使用した場合、基板裏面から侵入した0
2 、H20が記録膜層に拡散し、記録層の酸化に伴な
う性能低下をもたらす。そこで、これを防ぐために、一
般に基板と記録層の間には、Si3 Na 、Sin、
5i02等の下地膜を設ける処理がなされている。これ
ら下地膜は、通常、蒸着、スパッタ等の真空法により成
膜されている。However, since plastics such as PMMA and PC have good air permeability and water permeability, they may cause warping, or when used as a disk substrate, zero particles may enter from the back side of the substrate.
2. H20 diffuses into the recording film layer, resulting in performance deterioration due to oxidation of the recording layer. Therefore, in order to prevent this, Si3Na, Sin,
A process is performed to provide a base film such as 5i02. These base films are usually formed by vacuum methods such as vapor deposition and sputtering.
一方、二酸化珪素被膜の製造方法としては、これら蒸着
、スパッタ等の手段の他に、二酸化珪素の過飽和状態に
ある珪弗化水素酸溶液に基材を浸漬して基材表面に二酸
化珪素被膜を形成する方法(以後「析出法」と略称する
。)が知られている(例えば特開昭62−20876)
。On the other hand, as a method for producing a silicon dioxide film, in addition to these methods such as vapor deposition and sputtering, a silicon dioxide film is formed on the surface of the base material by immersing the base material in a hydrosilicofluoric acid solution that is supersaturated with silicon dioxide. A method for forming the oxide (hereinafter abbreviated as "precipitation method") is known (for example, Japanese Patent Application Laid-Open No. 62-20876).
.
特に、プラスチック成形体に析出法によって二酸化珪素
被膜を形成する方法に関しては、プラスチック成形体に
有機珪素化合物、それらの加水分解物及びコロイダルシ
リカ等の珪素化合物を被覆硬化させて第1次被膜とした
後、析出法で第1次被膜上に二酸化珪素被膜を形成させ
る方法が知られている(例えば、特開昭6l−1273
4)。In particular, regarding the method of forming a silicon dioxide coating on a plastic molded body by a precipitation method, the plastic molded body is coated with silicon compounds such as organic silicon compounds, their hydrolysates, and colloidal silica and cured to form a primary coating. After that, a method is known in which a silicon dioxide film is formed on the primary film by a precipitation method (for example, Japanese Patent Application Laid-Open No. 61-1273).
4).
[発明が解決しようとする問題点]
プラスチック成形体の表面に従来の蒸着、スパッタ等の
真空法によって二酸化珪素膜を成膜する場合、
■ 成膜中に基板からガスが発生するため良質な膜が得
られにくい。[Problems to be solved by the invention] When forming a silicon dioxide film on the surface of a plastic molded body by conventional vacuum methods such as vapor deposition and sputtering, ■ gas is generated from the substrate during film formation, resulting in a high quality film. is difficult to obtain.
■ 光デイスク基板、グレーティングレンズ等の表面に
形成されている、トラッキング用の溝状の凹凸形状に追
従した膜を成膜することが困難である。(2) It is difficult to form a film that follows the uneven shape of tracking grooves formed on the surface of an optical disk substrate, grating lens, etc.
■ 得られた膜は樹脂基板との密着性に乏しく、温湿度
負荷により剥離しやすい。■ The obtained film has poor adhesion to the resin substrate and is easily peeled off due to temperature and humidity loads.
等の問題点があった
これに対し、析出法によれば、真空法による二酸化珪素
成膜法に比較して
■ 低温成膜が可能である。On the other hand, the deposition method allows film formation at a lower temperature than the vacuum method.
■ 異型表面への均一成膜が可能である。■ Uniform film formation on irregularly shaped surfaces is possible.
等の効果が奏され、光デイスク基板の下地膜を二酸化珪
素膜に限定した場合、先述のスパッタ或いは蒸着法の問
題点をある程度解決し得ることが期待できる。When such effects are achieved and the base film of the optical disk substrate is limited to a silicon dioxide film, it is expected that the problems of the above-mentioned sputtering or vapor deposition methods can be solved to some extent.
しかしながら、先ディスク基板、グレーティングレンズ
等の微細な凹凸を有するプラスチック基板上に、有機珪
素化合物、それらの加水分解物及びコロイダルシリカ等
の珪素化合物を被覆硬化させて得られる第1次被膜は、
膜厚0.5〜30μmと厚くなりやすいために、基板表
面の凹凸が消失しやすく、該第1次被膜上に析出法によ
って二酸化珪素を被覆しても、実用に適した光デイスク
基板、グレーティングレンズ等が作成できないという問
題点があった。However, the primary film obtained by coating and curing silicon compounds such as organosilicon compounds, their hydrolysates, and colloidal silica on plastic substrates with fine irregularities such as front disk substrates and grating lenses,
Since the film thickness tends to be as thick as 0.5 to 30 μm, the irregularities on the substrate surface are likely to disappear, and even if silicon dioxide is coated on the primary film by a precipitation method, optical disk substrates and gratings that are suitable for practical use. There was a problem that lenses etc. could not be created.
[藺題点を解決するための手段及び作用]本発明は、上
記従来の問題点を解決し、プラスチック成形体として特
にアクリル樹脂成形体に、表面凹凸を維持し得る、かつ
耐久性に優れた均一厚さの二酸化珪素被膜を製造する方
法を提供するものである。[Means and effects for solving the problems] The present invention solves the above-mentioned conventional problems and provides a plastic molded product, especially an acrylic resin molded product, which can maintain surface irregularities and has excellent durability. A method of producing a silicon dioxide coating of uniform thickness is provided.
本発明は、
アクリル樹脂成形体に有機珪素化合物を被覆硬化させて
第1次被膜とした後、該第1次被膜つきアクリル樹脂成
形体と二酸化珪素の過飽和状態の珪弗化水素酸溶液とを
接触させて第1次被膜上に二酸化珪素被膜を成形させる
二酸化珪素被覆アクリル樹脂成形体の製造方法において
、
該第1次被膜が一般式(r)で示されるメタクリロキシ
基を有する珪素化合物と、一般式(夏りで示される珪素
化合物の加水分解物とを、該一般式(1)で示されるメ
タクリロキシ基を有する珪素化合物のR’SiO3/2
換算重量(A)と、−散式(II )で示される珪素化
合物のStow換算重量(B)との比が0.1<B/A
<0.5となるように含む混合物を被覆硬化させて形成
されることを特徴とする二酸化珪素被覆アクリル樹脂成
形体の製造方法を要旨とするものである。In the present invention, an acrylic resin molded body is coated with an organosilicon compound and cured to form a primary coating, and then the acrylic resin molded body with the primary coating is treated with a supersaturated hydrosilicofluoric acid solution of silicon dioxide. A method for producing a silicon dioxide-coated acrylic resin molded article, in which a silicon dioxide coating is formed on a primary coating by contacting the silicon compound with a methacryloxy group represented by the general formula (r); R'SiO3/2 of a silicon compound having a methacryloxy group represented by the general formula (1)
The ratio of the converted weight (A) to the Stow converted weight (B) of the silicon compound represented by formula (II) is 0.1<B/A
The gist of the present invention is a method for producing a silicon dioxide-coated acrylic resin molded article, which is formed by coating and curing a mixture containing a silicon dioxide-coated acrylic resin molded article in such a manner that the acrylic resin molded article is less than 0.5.
R’ St (R’ )3 ・・・(り5
i(R3)4 ・・−(TI)(式中、
R1はメタクリロキシ基を有する有機基であり R2及
びR3は、アルコキシ基、アルコキシアルコキシ基、ア
セトキシ基及び塩素元素から選ばれる1種もしくは複数
の結合基である。)析出法によって直接プラスチック成
形体表面に二酸化珪素膜を被覆する場合、珪弗化水素酸
溶液とプラスチックの反応性や濡れ性が悪いため、付着
力が弱く、また、ムラのある膜しか得られないが、プラ
スチック成形体に予め有機珪素化合物を被覆硬化させて
おけば、表面のシラノール基が珪弗化水素酸溶液中の珪
素成分との結合の場となるため、析出法によって得られ
る二酸化珪素膜の付着力及びムラを改善することが可能
である。R' St (R')3...(ri5
i(R3)4...-(TI) (in the formula,
R1 is an organic group having a methacryloxy group, and R2 and R3 are one or more bonding groups selected from an alkoxy group, an alkoxyalkoxy group, an acetoxy group, and a chlorine element. ) When directly coating the surface of a plastic molded object with a silicon dioxide film using the precipitation method, the reactivity and wettability of the hydrosilicofluoric acid solution and the plastic are poor, resulting in weak adhesion and uneven film formation. However, if the plastic molded body is coated with an organosilicon compound and cured in advance, the silanol groups on the surface will become a place for bonding with the silicon component in the hydrosilicofluoric acid solution. It is possible to improve the adhesion and unevenness of the film.
しかし、有機珪素化合物を被覆硬化させて得られる第1
次被膜の膜厚を数百オングストローム以下と薄くする場
合には、析出法によってムラのない均一な膜であって、
付着力の強固な二酸化珪素被膜を得るには、プラスチッ
クの種類によって有機珪素化合物を選択する必要がある
。However, the first method obtained by coating and curing an organosilicon compound
When the thickness of the subsequent coating is reduced to several hundred angstroms or less, the deposition method is used to create an even and uniform film.
In order to obtain a silicon dioxide film with strong adhesion, it is necessary to select an organic silicon compound depending on the type of plastic.
本発明者らは、アクリル樹脂成形体に対して好適な、第
1次被膜形成のための有機珪素化合物について鋭意研究
を重ねた結果、前記一般式(1)で示されるメタクリロ
キシ基を有する珪素化合物と、一般式(TI )で示さ
れる珪素化合物の加水分解物の特定割合の混合系が最適
であることを見出し、本発明を完成させた。As a result of extensive research into organosilicon compounds suitable for forming primary coatings on acrylic resin molded bodies, the present inventors have discovered a silicon compound having a methacryloxy group represented by the general formula (1) above. The present invention has been completed based on the discovery that a mixed system of a hydrolyzate of a silicon compound represented by the general formula (TI) in a specific ratio is optimal.
以下に本発明の詳細な説明する。The present invention will be explained in detail below.
本発明において、第1次被膜の形成に用いられる珪素化
合物のうち、前記一般式(I)で示されるメタクリロキ
シ基を有する珪素化合物としてはγ−メタクリロキシプ
ロピルトリメトキシシランが好ましい。また、一般式(
II)で示される珪素化合物としてはテトラエトキシシ
ランが挙げられ、その加水分解物とは、該珪素化合物中
のアルコキシ基、アルコキシアルコキシ基、アシルオキ
シ基、塩素元素の一部又は全部が水酸基に置換されたも
の、更に置換された水酸基同志が一部自然に縮合したも
のを含んでいる。これらの加水分解物は、例えば水及び
アルコールの様な混合溶媒中で酸の存在下、加水分解す
ることによって容易に得ることができる。In the present invention, among the silicon compounds used to form the primary film, γ-methacryloxypropyltrimethoxysilane is preferable as the silicon compound having a methacryloxy group represented by the general formula (I). Also, the general formula (
Examples of the silicon compound represented by II) include tetraethoxysilane, and its hydrolyzate is a silicon compound in which part or all of the alkoxy group, alkoxyalkoxy group, acyloxy group, or chlorine element is substituted with a hydroxyl group. It also includes those in which substituted hydroxyl groups are partially naturally condensed. These hydrolysates can be easily obtained, for example, by hydrolysis in a mixed solvent such as water and alcohol in the presence of an acid.
前記一般式(I)で示されるメタクリロキシ基を有する
珪素化合物としては、1種を単独で用いても、2種以上
を併用しても良い。また、一般式(TI)で示される珪
素化合物も同様に、1 fmを単独で用いても、2種以
上を併用しても良い。As the silicon compound having a methacryloxy group represented by the general formula (I), one type may be used alone or two or more types may be used in combination. Similarly, with respect to the silicon compound represented by the general formula (TI), 1 fm may be used alone or two or more types may be used in combination.
本発明において、一般式(I)で示されるメタクリロキ
シ基を有する珪素化合物と、一般式(II)で示される
珪素化合物の加水分解物との混合割合は、一般式(I)
で示されるメタクリロキシ基を有する珪素化合物のR’
S i 03/2換算重ff1(A)と、一般式(I
I)で示される珪素化合物の5in2換算重量(B)と
の比が、0.1くB/A<0.5となるようにする。In the present invention, the mixing ratio of the silicon compound having a methacryloxy group represented by the general formula (I) and the hydrolyzate of the silicon compound represented by the general formula (II) is as follows:
R' of a silicon compound having a methacryloxy group represented by
S i 03/2 equivalent weight ff1(A) and the general formula (I
The ratio of the silicon compound represented by I) to the 5in2 equivalent weight (B) is set to be 0.1 and B/A<0.5.
析出法によって得られる二酸化珪素被膜の付着力に関し
ては、被膜を形成するアクリル樹脂成形体のアクリル樹
脂の平均分子量及び上記珪素化合物の混合比B/Aによ
って大きく支配される。The adhesion of the silicon dioxide coating obtained by the precipitation method is largely controlled by the average molecular weight of the acrylic resin of the acrylic resin molding forming the coating and the mixing ratio B/A of the silicon compound.
本発明において、付着力の強固な二酸化珪素被膜を得る
ためには、使用するアクリル樹脂基板の平均分子量は8
万以下が好ましく、また、上記B/A比は0.1<B/
Aである必要がある。In the present invention, in order to obtain a silicon dioxide coating with strong adhesion, the average molecular weight of the acrylic resin substrate used is 8.
The above B/A ratio is preferably 0.1<B/
It needs to be A.
このような珪素化合物の混合物をアクリル樹脂成形体に
被覆硬化させ第1次被膜とする方法としては、該珪素化
合物の混合物を各種溶媒に溶かしたものを塗布液とする
浸漬塗布法が好適である。As a method for coating and curing such a mixture of silicon compounds on an acrylic resin molded body to form a primary film, a dip coating method using a coating solution prepared by dissolving the mixture of silicon compounds in various solvents is suitable. .
形成される第1次被膜は、塗布液中の珪素化合物の濃度
、浸漬塗布の際の引き上げ速度などの塗布条件を設定す
ることによって、ガラス基板(例えば通常の板ガラス、
ソーダライムガラス等)上に、同様な条件で被膜の作成
を行なった場合に、その膜厚が5〜50nm好ましくは
10〜30nm厚の被膜が作成されるような条件で成膜
されることが望ましい。The primary coating to be formed can be applied to a glass substrate (for example, ordinary plate glass,
When a film is formed under similar conditions on (soda lime glass, etc.), the film can be formed under conditions such that a film with a thickness of 5 to 50 nm, preferably 10 to 30 nm, is created. desirable.
即ち、第1次被膜が、ガラス基板上に50nm程度まで
の膜厚の被膜が形成される条件で作成された被膜であれ
ば、光デイスク基板の表面凹凸形状を保持した塗膜が得
られる。ガラス基板上に作成した場合に50nmより厚
くなる条件で第1次被膜を作成すると、形状追従性の悪
化を招く場合がある。また、ガラス基板上で膜厚が5n
mより薄くなるような条件では、析出法によって得られ
る二酸化珪素被膜の付着強度の低下を招くため適当では
ない。That is, if the primary coating is formed under conditions such that a coating with a thickness of up to about 50 nm is formed on a glass substrate, a coating that maintains the surface unevenness of the optical disk substrate can be obtained. If the primary film is created on a glass substrate under conditions where it becomes thicker than 50 nm, shape followability may deteriorate. Also, the film thickness was 5n on the glass substrate.
Conditions where the thickness is less than m are not suitable because this will result in a decrease in the adhesion strength of the silicon dioxide film obtained by the precipitation method.
本発明において、このような膜厚の第1次被膜を形成す
るためには、塗布液中の珪素化合物濃度が0.5〜3重
量%であることが好ましい。In the present invention, in order to form a primary film having such a thickness, it is preferable that the silicon compound concentration in the coating liquid is 0.5 to 3% by weight.
なお、上記のように、第1次被膜の膜厚形成条件をガラ
ス基板をモニターとして表すのは、アクリル樹脂基板上
の第1次被膜の膜厚を直接測定する場合、
■ アクリル樹脂基板は表面の平滑性が悪く、接触針式
膜厚測定機での膜厚測定が困難である。As mentioned above, the conditions for forming the thickness of the primary coating are expressed using the glass substrate as a monitor when directly measuring the thickness of the primary coating on the acrylic resin substrate. The smoothness of the film is poor, making it difficult to measure the film thickness with a contact needle film thickness measuring device.
■ アクリル樹脂基板に塗布された珪素化合物が次第に
アクリル樹脂基板内部に拡散するため、アクリル樹脂基
板と珪素化合物との界面が不明−瞭であり、電子顕微鏡
等の観察によっても膜厚測定が不可能である。■ Because the silicon compound applied to the acrylic resin substrate gradually diffuses into the interior of the acrylic resin substrate, the interface between the acrylic resin substrate and the silicon compound is unclear, making it impossible to measure the film thickness by observation using an electron microscope, etc. It is.
という2つの問題があるからである。・このようにして
、アクリル樹脂基板上に作成された第1次被膜は、一般
式(I−)で示されるメタクリロキシ基を有する珪素化
合物がアクリル樹脂基板内部に浸透するため、ある程度
の膜厚以下であれば、光デイスク基板の形状を保持し得
る。ただし、一般式(II)で示される珪素化合物の加
水分解物は、アクリル樹脂基板内部に浸透し難いため、
メタクリロキシ基を有する珪素化合物に対する混合比率
(B/A)が高くなると、光デイスク基板の表面形状を
損なう結果となる。このため、本発明においては、前記
混合比率B/AはB/Aく0.5とする。“
本発明においては、第1次被膜を形成したアクリル樹脂
基板を、次いで、二酸化珪素の過飽和状態の珪弗化水素
酸溶液と接触させて、第1次被膜上に二酸化珪素被膜を
形成させる。This is because there are two problems.・In this way, the primary film created on the acrylic resin substrate has a film thickness below a certain level because the silicon compound having a methacryloxy group represented by the general formula (I-) penetrates into the inside of the acrylic resin substrate. If so, the shape of the optical disk substrate can be maintained. However, since the hydrolyzate of the silicon compound represented by general formula (II) is difficult to penetrate into the inside of the acrylic resin substrate,
If the mixing ratio (B/A) to the silicon compound having a methacryloxy group becomes high, the surface shape of the optical disk substrate will be damaged. Therefore, in the present invention, the mixing ratio B/A is set to B/A minus 0.5. “In the present invention, the acrylic resin substrate on which the primary film has been formed is then brought into contact with a supersaturated hydrosilicofluoric acid solution of silicon dioxide to form a silicon dioxide film on the primary film.
二酸化珪素の過飽和状態の珪弗化水素酸溶液(以下、「
処理液」と略称する。)としては、珪弗化水素酸溶液に
二酸化珪素(シリカゲル、エアロゲル、シリカガラス、
その他二酸化珪素含有物など)を溶解させた後、水又は
試薬(ホウ酸、塩化アルミニウム、金属アルミニウム、
その他)を添加するか処理液温度を上昇させる等の手段
で、二酸化珪素の過飽和状態としたものが使用される。A supersaturated silicofluoric acid solution of silicon dioxide (hereinafter referred to as “
It is abbreviated as "processing liquid". ), silicon dioxide (silica gel, aerogel, silica glass,
Other silicon dioxide-containing substances) are dissolved in water or reagents (boric acid, aluminum chloride, metallic aluminum,
A supersaturated state of silicon dioxide is used, for example, by adding a solution (other than others) or increasing the temperature of the processing solution.
本発明において、第1次被膜つきアクリル樹脂成形体の
基板と接触させる処理液中の珪弗化水素酸の濃度として
は、1〜3モル/Itが好ましく、特に3モル/1より
濃い珪弗化水素酸水溶液に二酸化珪素を飽和させた後、
水で稀釈して1〜3モル/Lの濃度としたものが被膜形
成速度が速く、・効率良く被膜形成が行なえるので望ま
しい。In the present invention, the concentration of hydrosilicofluoric acid in the treatment liquid that is brought into contact with the substrate of the acrylic resin molded body with the primary coating is preferably 1 to 3 mol/It, particularly silicofluoric acid that is higher than 3 mol/It. After saturating silicon dioxide in an aqueous solution of hydrohydric acid,
It is preferable to dilute it with water to a concentration of 1 to 3 mol/L because the film formation rate is fast and the film can be formed efficiently.
また、該処理液は
(イ) 該成形体との接触時においても、■連続的に硼
酸や塩・化アルミニウム等の添加剤水溶液が添加、混合
されている、■アルミニウム等の金属が溶解混合されて
いる、■温度を一時冷却して二酸化珪素を飽和させ、そ
の後再び温度を上昇させる等の手段によって常時過飽和
度が維持されている処理液であり、
(ロ) 1分間あたり処理液全量の3%以上の処理液が
フィルターで濾過され戻される処理液である、
ことが好ましい。In addition, the treatment liquid (a) also contains (a) an aqueous solution of additives such as boric acid, chloride/aluminum chloride, etc. that is continuously added and mixed during contact with the molded body, and (i) metals such as aluminum are dissolved and mixed. ■It is a processing liquid in which the degree of supersaturation is maintained at all times by means such as temporarily cooling the temperature to saturate silicon dioxide, and then raising the temperature again, and (b) the total amount of processing liquid per minute. It is preferable that 3% or more of the treatment liquid is the treatment liquid that is filtered through a filter and returned.
ここで、接触時において、■連続的に硼酸等の水溶液を
添加混合したり、■アルミニウム等の金属を溶解混合す
るのは、被膜の形成速度を向上させるために好ましい。At the time of contact, it is preferable to (1) continuously add and mix an aqueous solution such as boric acid or (2) dissolve and mix a metal such as aluminum in order to improve the rate of film formation.
硼酸の場合、その添加量は、処理液中の珪弗化水素酸1
モルに対して5X10−’モル/Hr”’1.0xlO
−’モル/Hrの範囲が好ましく、また、金属アルミニ
ウムを溶解させる場合その溶解量は、処理液中の珪弗化
水・素酸1モルに対してlXl0−’モル/ h r〜
4X10−3モル/ h rの範囲が好ましい。In the case of boric acid, the amount added is 1 part of hydrosilicic acid in the processing solution.
5X10-'mol/Hr"'1.0xlO per mole
-' mol/Hr is preferable, and when metallic aluminum is dissolved, the amount dissolved is lXl0-' mol/hr to 1 mol of fluorosilicic acid/hydrogen acid in the treatment solution.
A range of 4X10-3 mol/hr is preferred.
マタ、3%以上の処理液を循環させることは均質な被膜
を連続的に得るために効果的であり、フィルターで処理
液を濾過することは凹凸形状のない被膜を得るために好
ましい。Circulating the treatment liquid at a concentration of 3% or more is effective for continuously obtaining a homogeneous coating, and filtering the treatment liquid with a filter is preferable for obtaining a coating without irregularities.
処理液を浸漬槽に入れて該成形体と接触させる場合には
、浸漬中の該成形体表面において該処理液が層流となっ
て流れるようにすることがムラのない均質な被膜を得る
ために効果的である。When the treatment liquid is placed in a dipping tank and brought into contact with the molded body, it is necessary to allow the treatment liquid to flow in a laminar flow on the surface of the molded body during immersion in order to obtain an even and homogeneous coating. effective.
なお、このような析出法によって得られる二酸化珪素被
膜中には、吸着水やシラノール基が含まれており、これ
らを除去するためには、該被膜に高周波等による加熱処
理を施すことが好ましい。Note that the silicon dioxide film obtained by such a precipitation method contains adsorbed water and silanol groups, and in order to remove these, it is preferable to subject the film to heat treatment using high frequency waves or the like.
[実施例]
以下、実施例及び比較例を挙げて本発明の詳細な説明す
るが、本発明はその要旨を超えない限り、以下の実施例
に限定されるものではい。[Examples] Hereinafter, the present invention will be described in detail with reference to Examples and Comparative Examples, but the present invention is not limited to the following Examples unless it exceeds the gist thereof.
実施例1
γ−メタクリロキシプロピルトリメトキシシラン1.5
gとC3GL−0803P (チッソ■製、固形分濃度
8%(テトラエトキシシランの加水分解物))3gの混
合物(B/A=0.22)をエタノール:イソプロピル
アルコール:n−ブチルアルコール=5:3:2(体積
比)の混合溶媒250mAに溶解した溶液(珪素化合物
濃度的0.9重量%)に、縦、横100mm、厚さ1.
5mmのアクリル樹脂平板(押出板、数平均分子量57
000)を浸漬し、15cm/minの速度で引き上げ
た後、室温で1時間放置した。・上記操作と全く同様の
条件でガラス基板に第1次被膜を成形したところ、その
膜厚はおよそ1゜nmであった。Example 1 γ-methacryloxypropyltrimethoxysilane 1.5
A mixture of 3 g of C3GL-0803P (manufactured by Chisso ■, solid content concentration 8% (hydrolyzate of tetraethoxysilane)) (B/A = 0.22) was mixed with ethanol: isopropyl alcohol: n-butyl alcohol = 5: A solution (silicon compound concentration: 0.9% by weight) dissolved in 250 mA of a mixed solvent of 3:2 (volume ratio) was coated with a 100 mm length and width and a thickness of 1.5 mm.
5mm acrylic resin flat plate (extruded plate, number average molecular weight 57
000) was immersed, pulled up at a speed of 15 cm/min, and then left at room temperature for 1 hour. - When a primary film was formed on a glass substrate under exactly the same conditions as the above operation, the film thickness was approximately 1 nm.
得られた第1次被膜付きアクリル平板に、第1図に示す
二酸化珪素被膜製造装置を用いて、二酸化珪素被膜を作
成した。A silicon dioxide film was formed on the obtained primary coated acrylic flat plate using the silicon dioxide film manufacturing apparatus shown in FIG.
第1図において、浸漬槽は外槽1と内槽2から成り、内
槽2と外槽1の間には水3が満たしである。この水は温
度40℃となるようヒーター4で加熱され、かつ、温度
分布均一化のため攪拌されている。内槽2は前部6、中
部7、後部8、か、ら成り、各部には工業用シリカゲル
粉末を二酸化珪素の供給源として、二酸化珪素を溶解・
飽和させた2、5mou/41の珪弗化水素酸水溶液6
.5j2が満たしである。In FIG. 1, the dipping tank consists of an outer tank 1 and an inner tank 2, and the space between the inner tank 2 and the outer tank 1 is filled with water 3. This water is heated by a heater 4 to a temperature of 40° C., and is stirred to make the temperature distribution uniform. The inner tank 2 consists of a front part 6, a middle part 7, and a rear part 8, and each part has industrial silica gel powder used as a source of silicon dioxide to dissolve and dissolve silicon dioxide.
Saturated 2.5 mou/41 aqueous solution of hydrosilicofluoric acid 6
.. 5j2 is satisfied.
このような装置により、まず循環ポンプ10を作動させ
て内槽後部8の反応液を一定量づつ汲出して、フィルタ
ー11で濾過し、内槽前部6へ戻す処理液循環を開始し
た。Using such a device, first, the circulation pump 10 was operated to pump out a certain amount of the reaction liquid from the rear part 8 of the inner tank, filter it with the filter 11, and start circulating the treated liquid back to the front part 6 of the inner tank.
その後、縦、横50mm、厚さ3mmのAJ2板123
枚を内槽後部8に浸漬し、10時間保持した。この状態
で反応液は適度なSin、過飽和度を有する処理液とな
った。ここでフィルター11の絶対除去率を1.5μm
、処理液循環流量を520mj!/m1n(処理液全量
が約6.5ftであるので、循環流量は8%/ m i
nである)に調整した。そして、前記珪素化合物によ
り第1次被膜を形成したアクリル平板9を内槽中部7に
垂直に浸漬し、前記条件、(即ち、AIL板3枚を浸漬
したまま8%/ m i・nの循環を行ない、1.5μ
mのフィルターで濾過する)で、120分間保持した。After that, AJ2 plate 123 with length and width of 50 mm and thickness of 3 mm
The sheet was immersed in the rear part 8 of the inner tank and held for 10 hours. In this state, the reaction solution became a treatment solution having appropriate levels of Sin and supersaturation. Here, the absolute removal rate of filter 11 is 1.5 μm.
, processing liquid circulation flow rate is 520mj! /m1n (The total volume of processing liquid is approximately 6.5ft, so the circulation flow rate is 8%/m1n.
n). Then, the acrylic flat plate 9 on which the primary coating was formed with the silicon compound was immersed vertically into the inner tank middle part 7, and the conditions were as described above (i.e., 8%/min circulation with the three AIL plates immersed). 1.5μ
(filtered with a filter of 500 ml) for 120 minutes.
上記処理で得られた二酸化珪素被膜の膜厚は、約110
0nであった。この成膜部を、ESCA(Electr
on 5pectroscopyfor Chem
ical Analysis)を用いて分析した結果
、殆どが5i02からなることが確認された。The thickness of the silicon dioxide film obtained by the above treatment is approximately 110
It was 0n. This film-forming part is
on 5pectroscopy for Chem
As a result of analysis using ical analysis), it was confirmed that most of the material consisted of 5i02.
得られた二酸化珪素被膜は、セロハン粘着テーブを貼り
付けて引き剥すテストでは、全く剥れない強固な付着力
を有するものであった。また、上記二酸化珪素被膜付き
アクリル樹脂基板を、沸騰水中に1時間浸漬したが、被
膜の密着性に変化はなかった。The obtained silicon dioxide film had a strong adhesion that could not be peeled off at all in a test in which a cellophane adhesive tape was attached and peeled off. Further, the acrylic resin substrate with the silicon dioxide coating was immersed in boiling water for 1 hour, but there was no change in the adhesion of the coating.
比較例1
γ−メタクリロキシプロピルトリメトキシシラン2gを
エタノール:イソプロピルアルコール:n−ブチルアル
コール=5:3:2(体積比)の混合溶媒250ml1
.に溶解した溶液に、縦、横100mm、厚さ1.5m
mのアクリル平板(押出板、数平均分子量57000)
を浸漬し15cm/minの速度で引き上げた後室温で
1時間放置した。Comparative Example 1 2 g of γ-methacryloxypropyltrimethoxysilane was added to 250 ml of a mixed solvent of ethanol: isopropyl alcohol: n-butyl alcohol = 5:3:2 (volume ratio).
.. 100mm in length and width and 1.5m in thickness.
m acrylic flat plate (extruded plate, number average molecular weight 57,000)
was immersed, pulled up at a speed of 15 cm/min, and then left at room temperature for 1 hour.
この第1次被膜付きアクリル平板に、実施例1と同様に
して二酸化珪素被膜(100nm)を作成した。A silicon dioxide film (100 nm) was formed on this primary coated acrylic flat plate in the same manner as in Example 1.
得られた二酸化珪素被膜は白濁したムラの多いものであ
り、電子顕微鏡観察の結果、二酸化珪素が粒子状にまば
らに付着していることが判明した。The obtained silicon dioxide coating was cloudy and uneven, and as a result of electron microscopic observation, it was found that silicon dioxide was sparsely attached in the form of particles.
実施例2.3、比較例2,3
以下の4種類の60mmφ、厚さ1.5mmのアクリル
平板(押出板、数平均分子量57000)を用意した。Example 2.3, Comparative Examples 2 and 3 The following four types of acrylic flat plates (extruded plates, number average molecular weight 57,000) each having a diameter of 60 mm and a thickness of 1.5 mm were prepared.
(i) 実施例1と同様な処理により二酸化珪素波
11i(50部m厚)を形成したもの(実施例(ii)
実施例1と同様な処理により二酸化珪素被膜(10
0nm厚)を形成したもの(実施例3)
(iii) スパッタ法により表裏両面に二酸化珪素
波11i(100nm厚)を形成したもの(比較例2)
(iv) 未処理のもの(比較例3)これらの透湿度
をJIS Z−0208(40℃90%RH)により
測定した結果を第1表に示す。(i) A silicon dioxide wave 11i (50 parts m thick) formed by the same process as in Example 1 (Example (ii)
A silicon dioxide film (10
0 nm thick) (Example 3) (iii) Silicon dioxide waves 11i (100 nm thick) were formed on both the front and back surfaces by sputtering (Comparative Example 2) (iv) Untreated (Comparative Example 3) Table 1 shows the results of measuring the moisture permeability of these materials according to JIS Z-0208 (40° C., 90% RH).
第1表より明らかなように、析出法による二酸化珪素被
膜は水蒸気を遮断する効果を充分に有しており、その効
果はスパッタ法による二酸化珪素以上であることが判明
した。As is clear from Table 1, the silicon dioxide film formed by the precipitation method has a sufficient effect of blocking water vapor, and the effect was found to be greater than that of the silicon dioxide film formed by the sputtering method.
第 1 表
比較例4(特開昭61−12734 実施例3参照)
メチルトリメトキシシラン207部、コロイダルシリカ
(8産化学工業(株)製、商品名スノーテックスC0固
形分20%)341部及び酢酸6部を混合し、外部冷却
子攪拌1時間実施後、室温で1日放置した。この様にし
て得られた加水分解物溶液160部にエチルセロソルブ
30部、塩化アンモニウム0.5部、フローコントロー
ル剤少々添加し塗料とした。Table 1 Comparative Example 4 (see Example 3 of JP-A-61-12734)
207 parts of methyltrimethoxysilane, 341 parts of colloidal silica (manufactured by Yasan Kagaku Kogyo Co., Ltd., trade name Snowtex C0 solid content 20%) and 6 parts of acetic acid were mixed, and after stirring with an external cooler for 1 hour, the mixture was heated to room temperature. I left it for a day. To 160 parts of the hydrolyzate solution thus obtained were added 30 parts of ethyl cellosolve, 0.5 parts of ammonium chloride, and a small amount of a flow control agent to prepare a paint.
予め洗浄したアクリル基板(縦100mm。Pre-cleaned acrylic substrate (length 100mm.
横100mm、厚さ1.4mm)に前記塗料を塗布し、
熱風乾燥炉で90℃、3時間加熱して乾燥硬化させた。Apply the above paint to a width of 100 mm and a thickness of 1.4 mm,
It was dried and cured by heating at 90° C. for 3 hours in a hot air drying oven.
アクリル基板上には約5μmの厚みの第1次被膜が形成
されていた。A primary film with a thickness of approximately 5 μm was formed on the acrylic substrate.
比較例5
比較例4においてアクリル基板上に数百オングストロー
ムの第1次被膜を形成させるためにメチルトリメトキシ
シランの加水分解物溶液4部にエチルアルコール:イソ
プロピルアルコール:n−ブチルアルコール=5:3:
、2(体積比)の混合溶媒200部、塩化アンモニウム
及びフローコントロール剤少々添加したものを塗布液と
した。Comparative Example 5 In Comparative Example 4, in order to form a primary film of several hundred angstroms on an acrylic substrate, ethyl alcohol: isopropyl alcohol: n-butyl alcohol = 5:3 was added to 4 parts of a hydrolyzate solution of methyltrimethoxysilane. :
, 2 (volume ratio), ammonium chloride, and a small amount of a flow control agent were added to prepare a coating liquid.
、縦、横100mm、厚さ1.5mmのアクリル平板(
押出板、数平均分子量57,000)に前記塗布液を塗
布し、熱風乾燥炉で80℃、3時間加熱して乾燥硬化さ
せた。上記操作と全く同様の条件でガラス基板に第1次
被膜を成形したところ、その膜厚はおよそ10部mであ
った。, an acrylic flat plate with length and width of 100 mm and thickness of 1.5 mm (
The coating solution was applied to an extruded plate (number average molecular weight: 57,000), and dried and cured by heating at 80° C. for 3 hours in a hot air drying oven. When a primary film was formed on a glass substrate under the same conditions as the above operation, the film thickness was approximately 10 parts m.
その後、得られた第1次被膜つきアクリル基板に実施例
1と同様にして、珪弗化水素酸の二酸化珪素過飽和溶液
を用い二酸化珪素被膜(150nm)を形成した。Thereafter, a silicon dioxide film (150 nm) was formed on the obtained acrylic substrate with the primary film in the same manner as in Example 1 using a silicon dioxide supersaturated solution of hydrosilicofluoric acid.
得られた二酸化珪素被膜はセロハン粘着テープを貼りつ
けて引き剥すテストで容易に剥離する、密着性に乏しい
ものであった。The resulting silicon dioxide coating had poor adhesion and was easily peeled off in a test in which cellophane adhesive tape was applied and peeled off.
[発明の効果]
以上詳述した通り、本発明の二酸化珪素被覆アクリル樹
脂成形体の製造方法は、アクリル樹脂成形体表面に前記
一般式(I)で示されるメタクリ 。[Effects of the Invention] As described in detail above, the method for producing a silicon dioxide-coated acrylic resin molded article of the present invention provides a method for producing a silicon dioxide-coated acrylic resin molded article by applying a methacrylic resin represented by the general formula (I) on the surface of the acrylic resin molded article.
ロキシ基を有する珪素化合物と、一般式(II)で示さ
れる珪素化合物の加水分解物とを、特定割合で含む混合
物を被覆硬化させることにより、非常に薄い、付着性良
好な珪素含有被膜を第1次被膜として被覆し、更にその
上に該第10次被膜と付着性良好な二酸化珪素被膜を作
成するものであって、本発明の方法によれば、
■ 蒸着、スパッタ法で直接アクリル樹脂成形体表面に
形成された二酸化珪素被膜に比較して、はるかに耐久性
の良い被膜を形成することができる。By coating and curing a mixture containing a silicon compound having a roxy group and a hydrolyzate of the silicon compound represented by the general formula (II) in a specific ratio, a very thin silicon-containing coating with good adhesion is formed. According to the method of the present invention, the silicon dioxide film is coated as a primary film, and then a silicon dioxide film with good adhesion to the 10th film is formed on top of the first film. It is possible to form a coating that is much more durable than a silicon dioxide coating formed on the body surface.
■ 第1次被膜形成のための塗布法において、使用する
塗布液として珪素化合物の希薄溶液を用いることができ
、更に該珪素化合物がアクリル樹脂内部へ拡散するため
微細な凹凸形状をもつ光デイスク基板へもその形状を損
なう事なく薄膜被覆する事ができる。■ In the coating method for forming the primary film, a dilute solution of a silicon compound can be used as the coating liquid, and furthermore, the silicon compound diffuses into the acrylic resin, so the optical disk substrate has a fine uneven shape. It is possible to coat the surface with a thin film without damaging its shape.
■ 第1次被膜形成後、溶液と接触させることによって
二酸化珪素を析出させ膜状にするものであるため、アク
リル樹脂製光デイスク基板等の表面の凹凸形状に追従し
た二酸化珪素被膜を形成できる。(2) After the primary coating is formed, silicon dioxide is precipitated into a film by contacting with a solution, so it is possible to form a silicon dioxide coating that follows the uneven shape of the surface of an acrylic resin optical disk substrate, etc.
■ 表裏両面の同時成膜が可能であり、得られた二酸化
珪素被膜は、水蒸気、酸素等の透過を遮断する効果を有
するだけでなく、光ディスクのレーザー入射側表面の耐
摩耗性を向上させる効果も備えている。■ Films can be formed on both the front and back surfaces at the same time, and the resulting silicon dioxide film not only has the effect of blocking the transmission of water vapor, oxygen, etc., but also has the effect of improving the wear resistance of the laser incident side surface of the optical disc. It is also equipped with
等の優れた効果が奏される。Excellent effects such as these can be achieved.
第1図は実施例において使用した二酸化珪素被膜製造装
置の系統説明図である。
1・・・外槽、2・・・内槽、
3・・・水、 4・・・ヒーター、5・
・・攪拌器、 6・・・内槽前部、7・・・
内槽中部、 8・・・内槽後部、9・・・アクリ
ル樹脂成形体、
10・・・循環ポンプ、 11・・・フィルター、
12・・・金属アルミニウム板、
13・・・攪拌器。
代理人 弁理士 重 野 剛FIG. 1 is a system explanatory diagram of the silicon dioxide film manufacturing apparatus used in the examples. 1...Outer tank, 2...Inner tank, 3...Water, 4...Heater, 5...
... Stirrer, 6... Inner tank front, 7...
Middle part of inner tank, 8... Rear part of inner tank, 9... Acrylic resin molded body, 10... Circulation pump, 11... Filter,
12... Metal aluminum plate, 13... Stirrer. Agent Patent Attorney Tsuyoshi Shigeno
Claims (4)
させて第1次被膜とした後、該第1次被膜つきアクリル
樹脂成形体と二酸化珪素の過飽和状態の珪弗化水素酸溶
液とを接触させて第1次被膜上に二酸化珪素被膜を成形
させる二酸化珪素被覆アクリル樹脂成形体の製造方法に
おいて、該第1次被膜が一般式( I )で示されるメタ
クリロキシ基を有する珪素化合物と、一般式(II)で示
される珪素化合物の加水分解物とを、該一般式( I )
で示されるメタクリロキシ基を有する珪素化合物のR^
1SiO_3_/_2換算重量(A)と、一般式(II)
で示される珪素化合物のSiO_2換算重量(B)との
比が0.1<B/A<0.5となるように含む混合物を
被覆硬化させて形成されることを特徴とする二酸化珪素
被覆アクリル樹脂成形体の製造方法。 R^1Si(R^2)_3・・・( I ) Si(R^3)_4・・・(II) (式中、R^1はメタクリロキシ基を有する有機基であ
り、R^2及びR^3は、アルコキシ基、アルコキシア
ルコキシ基、アセトキシ基及び塩素元素から選ばれる1
種もしくは複数の結合基である。)(1) After coating an acrylic resin molded body with an organosilicon compound and curing it to form a primary coating, the acrylic resin molded body with the primary coating is brought into contact with a supersaturated hydrosilicofluoric acid solution of silicon dioxide. In the method for producing a silicon dioxide-coated acrylic resin molded article, the primary coating comprises a silicon compound having a methacryloxy group represented by the general formula (I) and a silicon dioxide coating formed on the primary coating by forming a silicon dioxide coating on the primary coating. (II) and the hydrolyzate of the silicon compound represented by the general formula (I).
R^ of a silicon compound having a methacryloxy group represented by
1SiO_3_/_2 equivalent weight (A) and general formula (II)
A silicon dioxide-coated acrylic product, characterized in that it is formed by coating and curing a mixture containing a silicon compound represented by the formula in such a manner that the ratio of the silicon compound to the SiO_2 equivalent weight (B) is 0.1<B/A<0.5. A method for producing a resin molded body. R^1Si(R^2)_3...(I) Si(R^3)_4...(II) (In the formula, R^1 is an organic group having a methacryloxy group, and R^2 and R ^3 is 1 selected from alkoxy group, alkoxyalkoxy group, acetoxy group, and chlorine element
A species or a plurality of linking groups. )
である特許請求の範囲第1項に記載の二酸化珪素被覆ア
クリル樹脂成形体の製造方法。(2) The method for producing a silicon dioxide-coated acrylic resin molded article according to claim 1, wherein the acrylic resin molded article has a number average molecular weight of 80,000 or less.
の条件で被膜の作成を行なった場合に、5〜50nm厚
の被膜が作成される条件である特許請求の範囲第1項又
は第2項に記載の二酸化珪素被覆アクリル樹脂成形体の
製造方法。(3) Claim 1, wherein the conditions for creating the first film are such that a film with a thickness of 5 to 50 nm is created when the film is created on a glass substrate under similar conditions. Or the method for producing a silicon dioxide-coated acrylic resin molded article according to item 2.
む塗布液を塗布し乾燥させることにより形成される特許
請求の範囲第1項ないし第3項のいずれか1項に記載の
二酸化珪素被覆アクリル樹脂成形体の製造方法。(4) The primary film is formed by applying a coating liquid containing 0.5 to 3% by weight of a silicon compound and drying the coating according to any one of claims 1 to 3. A method for producing a silicon dioxide-coated acrylic resin molded article.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260161A JPH0762086B2 (en) | 1987-10-15 | 1987-10-15 | Method for producing silicon dioxide-coated acrylic resin molded body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62260161A JPH0762086B2 (en) | 1987-10-15 | 1987-10-15 | Method for producing silicon dioxide-coated acrylic resin molded body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01101339A true JPH01101339A (en) | 1989-04-19 |
| JPH0762086B2 JPH0762086B2 (en) | 1995-07-05 |
Family
ID=17344165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62260161A Expired - Fee Related JPH0762086B2 (en) | 1987-10-15 | 1987-10-15 | Method for producing silicon dioxide-coated acrylic resin molded body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0762086B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5520952A (en) * | 1993-07-16 | 1996-05-28 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a protective coating film on electronic parts and devices |
-
1987
- 1987-10-15 JP JP62260161A patent/JPH0762086B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5520952A (en) * | 1993-07-16 | 1996-05-28 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a protective coating film on electronic parts and devices |
| US5662961A (en) * | 1993-07-16 | 1997-09-02 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming a protective coating film on electronic parts and devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0762086B2 (en) | 1995-07-05 |
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