JPH01102435U - - Google Patents
Info
- Publication number
- JPH01102435U JPH01102435U JP19665087U JP19665087U JPH01102435U JP H01102435 U JPH01102435 U JP H01102435U JP 19665087 U JP19665087 U JP 19665087U JP 19665087 U JP19665087 U JP 19665087U JP H01102435 U JPH01102435 U JP H01102435U
- Authority
- JP
- Japan
- Prior art keywords
- casing
- partition plate
- open end
- cylindrical member
- swirl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cylinder Crankcases Of Internal Combustion Engines (AREA)
Description
第１図は本考案によるスワールポート構造を有
する部分的シリンダヘツド断面図；第２図は本考
案のスワールポート構造を構成する筒部材の外観
斜視図；第３図は第１図―線に沿つた断面図
；第４図は第１図―線に沿つた断面図；第５
図は筒部材の別実施例を示す外観斜視図；第６ａ
図は第４図に示すスワールポート開口巾ｍと最大
スワール比ＳＲｍａｘ．の関係を示すグラフ；第
６ｂ図は第３図に示すスワールポート開口巾ｎと
最小スワール比ＳＲｍｉｎ．の関係を示すグラフ
。
３……吸気ポート、７，７′……筒部材、８，
８′……筐体、９，９′……仕切板、１１，１１
′，１２，１２′……側板。
Fig. 1 is a partial sectional view of a cylinder head having a swirl port structure according to the present invention; Fig. 2 is an external perspective view of a cylindrical member constituting the swirl port structure of the present invention; Fig. 3 is taken along the line shown in Fig. 1. Cross-sectional view of ivy; Figure 4 is a cross-sectional view along the line of Figure 1; Figure 5
The figure is an external perspective view showing another embodiment of the cylindrical member; No. 6a
The figure shows the swirl port opening width m and the maximum swirl ratio SRmax shown in FIG. FIG. 6b is a graph showing the relationship between the swirl port opening width n and the minimum swirl ratio SRmin. shown in FIG. A graph showing the relationship between. 3... Intake port, 7, 7'... Cylindrical member, 8,
8'... Housing, 9, 9'... Partition plate, 11, 11
', 12, 12'...Side plate.
Claims (1)
筐体内部を二分割する仕切板と、その分割により
形成された２つの隔室内に配置されると共に上記
筐体の一開放端より他の開放端にかけ上記隔室断
面積を減少すべく筐体長手軸に対し傾斜して配置
される側板とにより構成される筒部材を、吸気ポ
ート内に挿着してなる内燃機関のスワールポート
構造。 A casing with both ends open, a partition plate inserted into the casing and dividing the inside of the casing into two, and a partition plate disposed within two compartments formed by the partitioning, and a partition plate inserted into the casing and partitioned from one open end of the casing. A swirl port for an internal combustion engine in which a cylindrical member is inserted into an intake port and includes a side plate extending over the other open end and arranged at an angle with respect to the longitudinal axis of the housing to reduce the cross-sectional area of the compartment. structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19665087U JPH01102435U (en) | 1987-12-26 | 1987-12-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19665087U JPH01102435U (en) | 1987-12-26 | 1987-12-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01102435U true JPH01102435U (en) | 1989-07-11 |
Family
ID=31487250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19665087U Pending JPH01102435U (en) | 1987-12-26 | 1987-12-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01102435U (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
-
1987
- 1987-12-26 JP JP19665087U patent/JPH01102435U/ja active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7019332B2 (en) | 2001-07-20 | 2006-03-28 | Freescale Semiconductor, Inc. | Fabrication of a wavelength locker within a semiconductor structure |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |