JPH01104745U - - Google Patents

Description

[Brief explanation of drawings]

FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor device according to the invention, FIG. 2 is a circuit diagram showing a source follower load drive circuit according to the same embodiment, and FIG. 3 is a first conventional example of the semiconductor device. 4 is a circuit diagram showing the equivalent circuit of the first conventional example, FIG. 5 is a circuit diagram showing the second conventional example, and FIG. 6 is a diagram of the protection diode in the second conventional example. FIG. 7 is a partial circuit diagram showing an equivalent circuit of a second conventional example using the same protection diode as above;
FIG. 8 is a vertical cross-sectional view showing another configuration of the protection diode in the second conventional example, and FIG. 9 is a partial circuit diagram showing an equivalent circuit of the second conventional example using a protection diode with another configuration similar to the above. It is. 1: n ⁺ substrate, 2: n-type epitaxial layer forming an epitaxial semiconductor substrate together with n ⁺ substrate, 10: n-channel VDMOS, 20: CM
OS, 30: n-channel thin film MOSFET, 3
3: Gate electrode of thin film MOSFET.

Claims (1)

[Claims for Utility Model Registration] In a semiconductor device in which an n-channel vertical MOSFET used in a source follower and a CMOS forming a peripheral circuit of the vertical MOSFET are integrated on the same semiconductor substrate, An n-channel thin film MOSFET is formed insulated from the semiconductor substrate, the thin film MOSFET is connected in series to the low potential side of the CMOS, and the gate electrode of the thin film MOSFET is connected to the power supply of the CMOS. Characteristic semiconductor devices.