JPH01105384A - Bubble magnetic zone divider - Google Patents

Abstract

PURPOSE:To effectively give a generated magnetic field from a conductor to a bubble by providing the conductors at a nonion implantation area in the bubble magnetic zone divider of a memory element to have a hair pin shaped conductor for the bubble switching and a conductor for bubble cutting to cross it. CONSTITUTION:An ion implantation area 1, nonion implantation area 2, a minor loop 3, a major line 4, a conductor 5 for stretching, and a conductor 6 for cutting constitute a bubble magnetic zone divider. In such a constitution, the hair pin shaped conductor 5 to pass through the cusp of the line 4 and the cusp of the loop 3 and the conductor 6 to cross it are provided in the nonion implantation area 2. With such a constitution, when a bubble 7 arrives at the cusp, a current in a direction to weaken the bias magnetic field in the loop is applied to the conductor 5, the bubble can be extended, and the current in the direction to enforce the magnetic field is applied to the conductor 6, and the current value at the time of dividing the bubble into two can be reduced.

Description

[Detailed Description of the Invention] [Summary] Regarding a bubble magnetic domain divider for an ion-implanted magnetic bubble memory element used in a storage device such as an electronic computing device, hairpin-shaped bubble stretching is performed for the purpose of reducing the current value for bubble division. In a bubble magnetic domain divider for an ion-implanted magnetic bubble memory element, the bubble stretching conductor and the bubble-cutting conductor are provided in a non-ion-implanted region.

[Industrial application field]

The present invention relates to a bubble magnetic domain divider for an ion-implanted magnetic bubble memory element used in a storage device such as an electronic computing device.

A magnetic bubble memory element is produced by forming a thin film of magnetic garnet (magnetic bubble crystal) on a single crystal substrate of gadolinium gallium garnet (GGG) or the like by liquid phase epitaxial growth, and then depositing a soft magnetic thin film of permalloy or the like on top of that by liquid phase epitaxial growth. A bubble transfer path with a matrix of patterns, or a cotiguous disk-type or snake-type ion-implanted bubble transfer path formed by the ion implantation method, in which bubbles generated by a bubble generator according to information are transferred to the transfer path. Information is recorded as "1" if there is a hub at a predetermined position in the pattern, and "0" if there is no hub. Information is read out by stretching the bubbles using a bubble domain expander to form striped magnetic domains, and then reading them out as electrical signals using a detector that utilizes the magnetoresistive effect to detect the presence or absence of bubbles.

In such a magnetic bubble memory element, in order to speed up the writing and reading of information, the information storage part is divided into a large number of minor loops, and these loops are connected to the major line for writing and the major line for reading. A minor one-way system is used. In this case, to read the information (bubble), in order to avoid erasing the bubble stored in the minor loop, the bubble is divided into two, one is left in the minor loop, and the other is placed on the major line for reading. It is designed to be sent to Therefore, a bubble magnetic domain divider is required.

[Conventional technology]

FIG. 2 is a diagram showing a conventional bubble domain separator for an ion-implanted magnetic bubble memory. In the figure, 1 is an ion-implanted region, 2 is a non-ion-implanted region, 3 is a minor loop of the snake-type transfer path, and 4 is a major line for reading, and the bubble magnetic domain divider is the cusp of major line 4 and the minor loop 3. It consists of a trench conductor 5 provided by tying the cusps together, and a cutting conductor 6 provided across the conductor. When the hublure comes to the cusp of minor loop 3, a pulse current is applied to the stretching conductor 5 to stretch the bubble, and then a pulse current is applied to the cutting conductor 6 to cut the bubble into two, and one of the cut parts Minor loop 3
and the other side is contracted to the cusp of major line 4.

[Problem that the invention seeks to solve]

In the above-mentioned conventional bubble magnetic domain divider, when stretching the bubble 7, it is pulled out into the ion-implanted region 1, but in this case, a large current is required because the magnetic field from the stretching conductor 5 is blocked by the ion-implanted layer. There was a drawback.

SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to provide a bubble magnetic domain divider that can reduce the current value for bubble division.

[Means for solving problems]

The above object is to provide a bubble magnetic domain divider for an ion-implanted magnetic bubble memory element having a hairpin-shaped bubble stretch conductor 5 and a bubble cut conductor 6 crossing the conductor 5. This is achieved by providing a bubble domain divider characterized in that the conductor 6 is provided in the non-ion implanted region 2.

[For production]

By providing the bubble stretching conductor 5 and the bubble cutting conductor 6 in the non-ion implanted region 2, the magnetic field from these conductors does not pass through the ion implanted layer and reaches the bubble layer directly, so that bubbles can be stretched and cut with a small current value. It becomes possible to cant.

〔Example〕

FIG. 1 is a diagram showing an embodiment of the present invention. In the figure, ■ is an ion implantation region, 2 is a non-ion implantation region, 3 is a minor loop, 4 is a major line, 5 is a stretch conductor, and 6 is a cut conductor.

In this embodiment, a hairpin-shaped bubble stretch conductor 5 passing through the cusp of the major line 4 and the cusp of the minor loop 3, and a cutting conductor 6 intersecting the conductor 5 are provided in the non-ion implantation region 2.

In this embodiment configured in this way, when the bubble 7 comes to the cusp of the minor loop 3, a current is passed through the stretching conductor 5 in the direction of weakening the bias magnetic field in the loop to stretch the bubble, and then the bubble is cut. conductor 6
Then, by passing a current in the direction of strengthening the bias magnetic field in the loop, the bubble is split into two. At this time, the magnetic field generated from these conductors 5 and 6 is not blocked by the ion implantation layer and directly penetrates the bubble. Therefore, the value of the current flowing through the conductor 5.6 can be reduced to about 2 compared to the conventional case.

〔Effect of the invention〕

By providing the stretch conductor and the cut conductor in the non-ion implantation region, the magnetic field generated from these conductors is effectively applied to the bubble, making it possible to reduce the current value compared to the conventional method.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing an embodiment of the present invention, and FIG. 2 is a diagram showing a conventional bubble domain divider for an ion-implanted magnetic bubble memory. In the figure, 1 is an ion implantation region, 2 is a non-ion implantation region, 3 is a minor loop, 4 is a major line, 5 is a stretch conductor, 6 is a cut conductor, and 7 is a bubble.

Claims (1)

[Claims] 1. Hairpin-shaped bubble stretch conductor (5)
In a bubble domain divider of an ion-implanted magnetic bubble memory element having a bubble-cutting conductor (6) intersecting with the conductor (5), the bubble-stretching conductor (5) and the bubble-cutting conductor (6) are A bubble magnetic domain divider characterized in that it is provided in an ion implantation region (2).