JPH01116465U - - Google Patents

Info

Publication number
JPH01116465U
JPH01116465U JP1988011412U JP1141288U JPH01116465U JP H01116465 U JPH01116465 U JP H01116465U JP 1988011412 U JP1988011412 U JP 1988011412U JP 1141288 U JP1141288 U JP 1141288U JP H01116465 U JPH01116465 U JP H01116465U
Authority
JP
Japan
Prior art keywords
output terminal
photovoltaic device
terminal portions
transparent electrode
back electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1988011412U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988011412U priority Critical patent/JPH01116465U/ja
Priority to GB8812887A priority patent/GB2214711B/en
Publication of JPH01116465U publication Critical patent/JPH01116465U/ja
Priority to HK904/92A priority patent/HK90492A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/939—Output lead wires or elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本考案の実施例を示す高さ方向を拡
大して示した光起電力装置の一部切欠斜視図、第
２図ａは、本考案の実施例と比較例について行な
つた半田濡れ性試験の結果を示すグラフ、同図ｂ
は、前記半田濡れ性試験の要領を示す図面、第３
図ａは、本考案の実施例と比較例について行なつ
た半田付け部の引張強度試験の結果を示すグラフ
、同図ｂは、前記引張試験の要領を示す図面、第
４図は、従来例を示す高さ方向を拡大して示した
光起電力装置の一部切欠斜視図である。 １１…基板、１２…透明電極、１２ａ…透明電
極側の出力端子部、１３…非晶質半導体層、１４
…背面電極、１４ａ…背面電極側の出力端子部、
１６…熱硬化性ポリマー型導体層。 Figure 1 is a partially cutaway perspective view of a photovoltaic device showing an example of the present invention, enlarged in the height direction, and Figure 2a is a diagram showing the example of the present invention and a comparative example. Graph showing the results of the solder wettability test, Figure b
is a drawing showing the outline of the solder wettability test, Part 3
Figure a is a graph showing the results of a tensile strength test of soldered parts conducted on the embodiment of the present invention and a comparative example, Figure b is a drawing showing the procedure of the tensile test, and Figure 4 is a conventional example. FIG. 2 is a partially cutaway perspective view of the photovoltaic device shown in an enlarged view in the height direction. DESCRIPTION OF SYMBOLS 11... Substrate, 12... Transparent electrode, 12a... Output terminal part on the transparent electrode side, 13... Amorphous semiconductor layer, 14
...back electrode, 14a...output terminal section on the back electrode side,
16...Thermosetting polymer type conductor layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基板１１の一主面に、非晶質半導体層１３を挟
んで透明電極１２と背面電極１４とを積層＋成膜
した発電区域を、単一又は複数形成すると共に、
前記電極１２，１４の各々に電気的に導通する出
力端子部１２ａ，１４ａを設けた光起電力装置に
おいて、前記出力端子部１２ａ，１４ａの上面に
加熱硬化性ポリマー型導電層１６が設けられたこ
とを特徴とする光起電力装置。 Forming one or more power generation areas on one main surface of the substrate 11 in which the transparent electrode 12 and the back electrode 14 are laminated and deposited with the amorphous semiconductor layer 13 in between,
In a photovoltaic device including output terminal portions 12a, 14a electrically connected to the electrodes 12, 14, a thermosetting polymer conductive layer 16 is provided on the upper surface of the output terminal portions 12a, 14a. A photovoltaic device characterized by:
JP1988011412U 1988-01-30 1988-01-30 Pending JPH01116465U (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1988011412U JPH01116465U (en) 1988-01-30 1988-01-30
GB8812887A GB2214711B (en) 1988-01-30 1988-05-31 Photovoltaic cell
HK904/92A HK90492A (en) 1988-01-30 1992-11-19 Photovoltaic cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988011412U JPH01116465U (en) 1988-01-30 1988-01-30

Publications (1)

Publication Number Publication Date
JPH01116465U true JPH01116465U (en) 1989-08-07

Family

ID=11777314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988011412U Pending JPH01116465U (en) 1988-01-30 1988-01-30

Country Status (3)

Country Link
JP (1) JPH01116465U (en)
GB (1) GB2214711B (en)
HK (1) HK90492A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4340402C2 (en) * 1993-11-26 1996-01-11 Siemens Solar Gmbh Method for contacting thin-film solar modules
JP2546530B2 (en) * 1993-12-24 1996-10-23 日本電気株式会社 LOC structure semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167056A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Silicon semiconductor electrode
JPS59167072A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Series-connected type thin film solar battery

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167056A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Silicon semiconductor electrode
JPS59167072A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Series-connected type thin film solar battery

Also Published As

Publication number Publication date
HK90492A (en) 1992-11-27
GB8812887D0 (en) 1988-07-06
GB2214711B (en) 1992-02-05
GB2214711A (en) 1989-09-06

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