JPH011201A - organic positive temperature coefficient thermistor - Google Patents
organic positive temperature coefficient thermistorInfo
- Publication number
- JPH011201A JPH011201A JP62-156759A JP15675987A JPH011201A JP H011201 A JPH011201 A JP H011201A JP 15675987 A JP15675987 A JP 15675987A JP H011201 A JPH011201 A JP H011201A
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- coefficient thermistor
- organic positive
- foil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(al産業上の利用分野
この発明は、有機正特性サーミスタ素体の表面に電極と
して金属箔を熱圧着した有機正特性サーミスタに関する
。DETAILED DESCRIPTION OF THE INVENTION (Al Industrial Field of Application) The present invention relates to an organic positive temperature coefficient thermistor in which a metal foil is thermocompression bonded as an electrode to the surface of an organic positive temperature coefficient thermistor element body.
(bl従来の技術
従来、ポリエチレンなどのポリオレフィン系樹脂にカー
ボンブラックなどの導電性粒子を混練することによって
有機正特性サーミスタ素体を形成し、その表面に金属箔
からなる電極を熱圧着して有機正特性サーミスタを構成
している。また、金属箔を熱圧着する際、サーミスタ素
体に接する面を粗面化することによってサーミスタ素体
に対する金属箔の接合強度を高めることが知られている
(特開昭60−196901号)。(bl Conventional technology) Conventionally, an organic positive temperature coefficient thermistor element is formed by kneading conductive particles such as carbon black into a polyolefin resin such as polyethylene, and electrodes made of metal foil are thermocompression bonded to the surface of the organic positive temperature coefficient thermistor element. It constitutes a positive temperature coefficient thermistor.It is also known that when bonding metal foil under heat and pressure, the bonding strength of the metal foil to the thermistor element can be increased by roughening the surface that contacts the thermistor element ( (Japanese Patent Application Laid-open No. 196901/1983).
(C1発明が解決しようとする問題点
このようなを機正特性サーミスタの電圧−電流特性は第
2図に示すようにa−a’間の低抵抗状態と、b−b’
間の高抵抗状態が存在する。このような特性を有する有
機正特性サーミスタを回路保護用の素子として用いた場
合、回路の正常動作時にはa−a’間に安定点があり、
異常動作時にはb−b’間に安定点が移る。(C1 Problem to be solved by the invention) The voltage-current characteristics of the thermistor have a low resistance state between a and a' and a low resistance state between b and b' as shown in FIG.
A high resistance state exists between. When an organic positive temperature coefficient thermistor having such characteristics is used as a circuit protection element, there is a stable point between a and a' during normal operation of the circuit.
During abnormal operation, the stable point moves between bb'.
ところで、従来のように粗面化した例えばCu箔を電極
として用いた場合、a−a’間に安定点がある正常動作
試験を行うと、100時間を経過したのち、抵抗値が大
きく増加しはじめた。これは、Cu7I5とサーミスタ
素体間に金属酸化物などの抵抗性物質が形成されたため
であると考えられる。このように抵抗値が増加すること
は誤動作の原因となり非常に危険である。また、b−b
’間に安定点がある異常動作時にも抵抗値変化が大きく
安定性が悪くなった。By the way, when a conventionally roughened Cu foil, for example, is used as an electrode, when a normal operation test with a stable point between a and a' is performed, the resistance value increases significantly after 100 hours. began. This is considered to be because a resistive substance such as a metal oxide was formed between Cu7I5 and the thermistor element body. This increase in resistance value causes malfunction and is extremely dangerous. Also, b-b
Even during abnormal operation with a stable point in between, the resistance value changed greatly and stability deteriorated.
この抵抗値変化は金属箔の材質をNiにすれば防ぐこと
ができるが、Ni箔の場合には表面あらさによって接合
強度が大きく変化することがわかった。Ni箔の表面あ
らさを変化させて試験を行ったところ、表面あらさ1.
0μm以下ではサーミスタ素体から容易に剥離し、また
2、0μm以上ではNi’;5表面の粗面とNi箔木本
体の間で剥離が発生し、逆に接合強度が弱くなることが
わかった。このため、正常動作状態では素子は低温低抵
抗状態にあるため、金属箔の表面あらさの差による抵抗
値変化は生じないが、異常動作状態においては、素子は
高温溶融状態にあるため、金属箔とサーミスタ素体との
熱膨張率の差によって金属箔とサーミスタ素体間で剥離
が生じやすく、抵抗値の増加を促進する原因となる。This change in resistance value can be prevented by using Ni as the material of the metal foil, but it has been found that in the case of Ni foil, the bonding strength changes greatly depending on the surface roughness. When testing was carried out by changing the surface roughness of the Ni foil, the surface roughness was 1.
It was found that when the thickness is less than 0 μm, it easily peels off from the thermistor body, and when it is 2.0 μm or more, peeling occurs between the rough surface of the Ni'; . Therefore, under normal operating conditions, the element is in a low-temperature, low-resistance state, so there is no change in resistance due to differences in the surface roughness of the metal foil, but in abnormal operating conditions, the element is in a high-temperature molten state, so the metal foil Due to the difference in coefficient of thermal expansion between the metal foil and the thermistor element, peeling easily occurs between the metal foil and the thermistor element, which promotes an increase in resistance value.
このように電極として用いる金属箔の材料とその表面あ
らさの程度によって正特性サーミスタの部品として信頼
性が大きく影響することがわかった。この発明の目的は
、電極として用いる金属箔とサーミスタ素体との接合強
度を向上させるとともに、エージング効果による抵抗値
の変化を安定化させた信頼性の高い有機正特性サーミス
タを提供することにある。As described above, it has been found that the reliability of a positive temperature coefficient thermistor component is greatly influenced by the material of the metal foil used as an electrode and the degree of its surface roughness. An object of the present invention is to provide a highly reliable organic positive temperature coefficient thermistor that improves the bonding strength between a metal foil used as an electrode and a thermistor body, and stabilizes changes in resistance due to aging effects. .
fd1問題点を解決するための手段
この発明の有機正特性サーミスタは、有機正特性サーミ
スタ素体の表面に金属箔を熱圧着し、この金属箔を電極
として用いる有機正特性サーミスタにおいて、
前記金属箔を、有機正特性サーミスタ素体に接する面が
1.0〜2.0μmの表面あらさを有するNi7I5と
したことを特徴としている。Means for Solving the FD1 Problem The organic positive temperature coefficient thermistor of the present invention is an organic positive temperature coefficient thermistor in which a metal foil is thermocompression bonded to the surface of an organic positive temperature coefficient thermistor element body, and this metal foil is used as an electrode. is characterized in that the surface in contact with the organic positive temperature coefficient thermistor body is made of Ni7I5 having a surface roughness of 1.0 to 2.0 μm.
(e)作用
この発明の有機正特性サーミスタにおいては、Ni %
Qを電極として用い、その表面あらさを1. 0〜2.
0μmのものを用いたため、このNi箔を有機正特性サ
ーミスタ素体に熱圧着した際、高い接合強度を得られる
とともに、長時間使用した後も、Ni箔とサーミスタ素
体間に金属酸化物などの抵抗性物質が形成されることが
なく、抵抗値変化が小さい。(e) Function In the organic positive temperature coefficient thermistor of this invention, Ni%
Using Q as an electrode, its surface roughness was determined as 1. 0-2.
Because we used 0 μm Ni foil, when we thermocompression bonded this Ni foil to the organic PTC thermistor element, we were able to obtain high bonding strength, and even after long-term use, there was no metal oxide etc. between the Ni foil and the thermistor element. No resistive material is formed, and the change in resistance value is small.
(f)実施例
この発明の実施例をいくつかのサンプルを用いた試験結
果とともに説明する。(f) Examples Examples of the present invention will be described along with test results using several samples.
先ず、電極として用いる金属箔の表面あらさを変化させ
て、電極強度すなわちサーミスタ素体と金属箔との接合
強度の関係を試験したところ第1図に示す結果が得られ
た。試験片は、厚さ1mmの有機正特性サーミスタ素体
の両面にNi箔を190°C120Kg/cm2で10
分間熱圧着したものを1010X50角に切断し、10
mm幅で90°剥離試験を行った。また、Ni箔は電解
溶液中で通電することによって表面を粗面化したものを
用いた。First, the relationship between the electrode strength, that is, the bonding strength between the thermistor body and the metal foil was tested by changing the surface roughness of the metal foil used as the electrode, and the results shown in FIG. 1 were obtained. The test piece was a 1 mm thick organic positive temperature coefficient thermistor body with Ni foil coated on both sides at 190°C and 120kg/cm2 for 10 minutes.
After heat-compression bonding for minutes, cut into 1010 x 50 square pieces.
A 90° peel test was conducted with a width of mm. Further, the Ni foil used had its surface roughened by applying electricity in an electrolytic solution.
第1図に示すように、表面あらさRa=1.0μm以下
では、粗面化の程度が十分ではなく、接合強度が低い。As shown in FIG. 1, when the surface roughness Ra is less than 1.0 μm, the degree of surface roughening is not sufficient and the bonding strength is low.
また、Ra=2.0μm以上でば粗面化した粒子が箔よ
り剥離し、接合強度が極端に低下する。Moreover, if Ra=2.0 μm or more, the roughened particles will peel off from the foil, and the bonding strength will be extremely reduced.
次に、正特性サーミスタ素体に電極を形成して通電試験
を行った結果を示す。用いたサンプルの電極条件は第3
図に示す通りであり、何れも素子の厚みを1mmにプレ
スした後、lQmm角に切断し、電極にリード点を半田
付けしたものを用いた。このような各サンプルに対して
直流2A連続通電試験を行った結果を第4図、直流15
Von−offサイクル通電試験を行った結果を第5図
に示す。(両図中の番号は第3図におけるNOと対応し
ている。)
第4図に示すように、No1〜4すなわちNi箔を電極
としたものは、抵抗値がマイナス変化を示し、安定して
いる。ところが、Cu箔を用いたものは、100時間を
経過した後、抵抗値が増加しはじめ、300時間で異常
動作領域にはいった。Next, we will show the results of conducting a current conduction test with electrodes formed on the positive temperature coefficient thermistor body. The electrode conditions of the sample used were the third
As shown in the figure, each element was pressed to a thickness of 1 mm, cut into 1Q mm square pieces, and the lead points were soldered to the electrodes. Figure 4 shows the results of a DC 2A continuous current test on each of these samples.
The results of the Von-off cycle energization test are shown in FIG. (The numbers in both figures correspond to NO in Figure 3.) As shown in Figure 4, for Nos. 1 to 4, that is, those using Ni foil as an electrode, the resistance value shows a negative change and is stable. ing. However, in the case of the one using Cu foil, the resistance value started to increase after 100 hours and entered the abnormal operation region after 300 hours.
これは、抵抗値増加によって第2図に示したようなV/
I特性の山が低くなるためであり、誤動作の原因となる
。This increases the resistance value as shown in Figure 2.
This is because the peak of the I characteristic becomes low, which causes malfunction.
また、第5図に示すようにon−offサイクル試験で
はNo3.4すなわちNi箔の表面あらさが1,0μm
以下のものと2.0μm以上のもの゛は、抵抗値変化が
大きい。これは、on−offによる発熱、冷却のサイ
クルによって箔の剥離が促進されたためである。また、
No5.6すなわちCu箔を用いたものは、箔の剥離が
生じなかったが、電極とサーミスタ素体間に金属酸化物
などの抵抗性物質が生成されたため、やはり抵抗値は増
加する。In addition, as shown in Figure 5, in the on-off cycle test, No. 3.4, that is, the surface roughness of the Ni foil was 1.0 μm.
The following types and those with a diameter of 2.0 μm or more have a large change in resistance value. This is because the peeling of the foil was promoted by the on-off cycle of heat generation and cooling. Also,
In No. 5.6, that is, the one using Cu foil, peeling of the foil did not occur, but since a resistive substance such as a metal oxide was generated between the electrode and the thermistor body, the resistance value still increased.
この発明の実施例であるNo1.2のサンプルでは何れ
の試験でも金属箔がヱリ離することがなく、電極とサー
ミスタ素体間に抵抗物質が生成されることもなく、抵抗
値変化が安定している。しかも−その変化方向がマイナ
ス方向であるため、回路保護用素子として用いた場合、
安全性が確保される(g)発明の効果
以上のようにこの発明によれば、有機正特性サーミスタ
素体に対する電極の接合強度が高く、かつ電極と素体間
に金属酸化物などの抵抗性物質が形成されにくいため、
on−offサイクルや冷熱などの膨張、収縮による電
極の剥離や長期間の使用による抵抗値増加が発生せず、
信頼性の高い有機正特性サーミスタが得られる。In sample No. 1.2, which is an example of this invention, the metal foil did not separate in any test, and no resistance substance was generated between the electrode and the thermistor body, and the resistance value change was stable. are doing. Moreover, the direction of change is negative, so when used as a circuit protection element,
Safety is ensured (g) Effect of the invention As described above, according to the present invention, the bonding strength of the electrode to the organic positive temperature coefficient thermistor element is high, and the resistive material such as metal oxide is used between the electrode and the element. Because substances are difficult to form,
No peeling of electrodes due to on-off cycles, expansion or contraction due to cold or heat, and no increase in resistance due to long-term use.
A highly reliable organic positive temperature coefficient thermistor can be obtained.
第1図は電極の表面あらさに対する接合強度の関係を表
す図、第2図は有機正特性サーミスタの電圧−電流特性
を表す図、第3図は各種電極の条件を表し、第4図と第
5図は第3図に示した各種電極を用いた場合の試験結果
を表している。Figure 1 shows the relationship between the bonding strength and the surface roughness of the electrode, Figure 2 shows the voltage-current characteristics of an organic positive temperature coefficient thermistor, Figure 3 shows the conditions for various electrodes, and Figure 4 and FIG. 5 shows test results using the various electrodes shown in FIG.
Claims (1)
着し、この金属箔を電極として用いる有機正特性サーミ
スタにおいて、 前記金属箔を、有機正特性サーミスタ素体に接する面が
1.0〜2.0μmの表面あらさを有するNi箔とした
ことを特徴とする有機正特性サーミスタ。(1) In an organic positive temperature coefficient thermistor in which a metal foil is thermocompressed onto the surface of an organic positive temperature coefficient thermistor body and this metal foil is used as an electrode, the surface of the metal foil in contact with the organic positive temperature coefficient thermistor body is 1.0. An organic positive temperature coefficient thermistor characterized by being made of Ni foil having a surface roughness of ~2.0 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-156759A JPH011201A (en) | 1987-06-24 | organic positive temperature coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-156759A JPH011201A (en) | 1987-06-24 | organic positive temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS641201A JPS641201A (en) | 1989-01-05 |
| JPH011201A true JPH011201A (en) | 1989-01-05 |
Family
ID=
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