JPH01121920U - - Google Patents
Info
- Publication number
- JPH01121920U JPH01121920U JP1714388U JP1714388U JPH01121920U JP H01121920 U JPH01121920 U JP H01121920U JP 1714388 U JP1714388 U JP 1714388U JP 1714388 U JP1714388 U JP 1714388U JP H01121920 U JPH01121920 U JP H01121920U
- Authority
- JP
- Japan
- Prior art keywords
- scribe line
- integrated circuit
- separates
- chips
- circuit chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図は本考案の第１実施例におけるウエハの
一部拡大断面図、第２図はウエハの全体図、第３
図は第２実施例の一部拡大平面図、第４図ａ及び
ｂは夫々第３図のＡ―Ａ線、Ｂ―Ｂ線に沿う拡大
断面図である。
１……半導体集積回路装置、２……ウエハ、３
……集積回路チツプ、４……第１のスクライブ線
、５……最小集団、６……第２のスクライブ線、
７……チエツク用チツプ、８……単結晶シリコン
、９……薄い酸化シリコン膜、１０……酸化シリ
コン膜、１１……第１の窒化シリコン膜、１２…
…第２の窒化シリコン膜。
FIG. 1 is a partially enlarged sectional view of a wafer in the first embodiment of the present invention, FIG. 2 is an overall view of the wafer, and FIG.
The figure is a partially enlarged plan view of the second embodiment, and FIGS. 4a and 4b are enlarged sectional views taken along lines AA and BB in FIG. 3, respectively. 1...Semiconductor integrated circuit device, 2...Wafer, 3
...Integrated circuit chip, 4...First scribe line, 5...Minimum group, 6...Second scribe line,
7...Check chip, 8...Single crystal silicon, 9...Thin silicon oxide film, 10...Silicon oxide film, 11...First silicon nitride film, 12...
...Second silicon nitride film.
Claims (1)
及びチエツク用チツプを夫々分離する第１のスク
ライブ線と、前記集積回路チツプを複数個の集団
として分離する第２のスクライブ線とを備え、前
記第１のスクライブ線と第２のスクライブ線が異
なる外観を呈するように構成したことを特徴とす
る半導体集積回路装置。 A first scribe line that separates integrated circuit chips and check chips arranged and formed on a semiconductor wafer, and a second scribe line that separates the integrated circuit chips into a plurality of groups; A semiconductor integrated circuit device characterized in that a scribe line and a second scribe line are configured to have different appearances.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1714388U JPH01121920U (en) | 1988-02-12 | 1988-02-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1714388U JPH01121920U (en) | 1988-02-12 | 1988-02-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01121920U true JPH01121920U (en) | 1989-08-18 |
Family
ID=31230663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1714388U Pending JPH01121920U (en) | 1988-02-12 | 1988-02-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01121920U (en) |
-
1988
- 1988-02-12 JP JP1714388U patent/JPH01121920U/ja active Pending