JPH0112832B2 - - Google Patents

Info

Publication number
JPH0112832B2
JPH0112832B2 JP56031839A JP3183981A JPH0112832B2 JP H0112832 B2 JPH0112832 B2 JP H0112832B2 JP 56031839 A JP56031839 A JP 56031839A JP 3183981 A JP3183981 A JP 3183981A JP H0112832 B2 JPH0112832 B2 JP H0112832B2
Authority
JP
Japan
Prior art keywords
film
thin film
metal thin
target
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56031839A
Other languages
Japanese (ja)
Other versions
JPS57145977A (en
Inventor
Kunio Hibino
Takashi Suzuki
Toshiaki Kunieda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56031839A priority Critical patent/JPS57145977A/en
Publication of JPS57145977A publication Critical patent/JPS57145977A/en
Publication of JPH0112832B2 publication Critical patent/JPH0112832B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Formation Of Insulating Films (AREA)

Description

【発明の詳細な説明】 本発明は、金属薄膜,半導体薄膜などの活性表
面を周囲環境から保護するための保護膜の形成方
法に関し、特に、プラスチツクフイルム上に強磁
性金属薄膜を形成させた金属薄膜型磁気記録媒体
の表面を保護するのに適した方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a protective film for protecting the active surface of a metal thin film, a semiconductor thin film, etc. from the surrounding environment, and particularly relates to a method for forming a protective film for protecting active surfaces of metal thin films, semiconductor thin films, etc. The present invention relates to a method suitable for protecting the surface of a thin film magnetic recording medium.

金属薄膜,半導体薄膜などを応用した各種機能
素子,記録媒体などにおいて、これらの表面を周
囲環境から保護するための薄膜状の安定な保護膜
が各分野において要求されている。金属薄膜型磁
気記録媒体においては、その特徴である高密度記
録を生かすために媒体と磁気ヘツドとの間隔を極
力小さくすることが要求されているが、金属薄膜
自体を周囲環境に露出すると湿気,腐食性ガスな
どの作用で、その表面が腐食されやすく、また、
磁気ヘツドとの摺動によつて、摩耗を生じやすい
ため、その表面に保護膜を形成させることが必要
であるが、この場合、上記の要求を考慮して、ス
ペーシングロスを小さくするため、膜層を1000Å
以下、好ましくは、数百Å以下にしなければなら
ない。
BACKGROUND OF THE INVENTION In various fields, there is a demand for stable protective films in the form of thin films to protect the surfaces of various functional elements, recording media, etc. using metal thin films, semiconductor thin films, etc. from the surrounding environment. Metal thin film magnetic recording media are required to keep the distance between the medium and the magnetic head as small as possible in order to take advantage of their characteristic high-density recording, but if the metal thin film itself is exposed to the surrounding environment, it will be exposed to moisture, moisture, etc. Its surface is easily corroded by the action of corrosive gases, and
Since it is easy to cause wear due to sliding with the magnetic head, it is necessary to form a protective film on the surface. 1000Å film layer
The thickness should preferably be several hundred Å or less.

従来、金属、あるいは、無機化合物をターゲツ
トとして不活性ガスイオン衝撃により相手物質上
に保護膜を形成させることはいくつか提案されて
おり、これらをプラスチツクフイルムを基板とす
る金属薄膜型磁気記録媒体に適用すべく検討した
が、可とう性に劣り磁気ヘツドの走行で亀裂を生
じたり、磁気ヘツドとの相性が悪く削れたりする
ものがほとんどであつた。またテトラフロロエチ
レン重合体をターゲツトとして物質表面に保護膜
を形成することも公知であり、これを金属薄膜型
磁気記録媒体の表面保護層として検討したが、耐
食性が劣ることが判明した。
In the past, several proposals have been made to form a protective film on a metal or inorganic compound by bombarding the target material with inert gas ions, and these methods have been proposed for use in metal thin film magnetic recording media using plastic film as a substrate. Although consideration was given to applying them, most of them were found to be inferior in flexibility and would crack when run by a magnetic head, or were not compatible with the magnetic head and could be scraped. It is also known to form a protective film on the surface of a material using a tetrafluoroethylene polymer as a target, and although this was investigated as a surface protective layer for a metal thin film type magnetic recording medium, it was found that the corrosion resistance was poor.

本発明者は以上のような点に鑑み、これまでに
例のない重合体をターゲツトとすることを試みた
結果、芳香族炭化水素重合体をターゲツトし還元
性ガスと不活性ガスの混合雰囲気中でスパツタし
た場合に所望の保護膜が形成されることが明らか
になつた。
In view of the above points, the present inventors attempted to target an unprecedented polymer, and as a result, they targeted an aromatic hydrocarbon polymer and injected it into a mixed atmosphere of reducing gas and inert gas. It has become clear that the desired protective film can be formed by sputtering.

ここで、芳香族炭化水素重合体としては、ポリ
スチレン,ポリ―α―メチルスチレンがある。
Here, examples of aromatic hydrocarbon polymers include polystyrene and poly-α-methylstyrene.

このオレフイン重合体をフイルム状に成形した
もの、あるいは、アルミニウム板上に塗膜として
形成したものをターゲツトとし、アルゴン,クリ
プトン,キセノンなどの不活性ガスと水素,炭化
水素,シラン,ホスフインなどの還元性ガスの混
合雰囲気中でイオン衝撃により上記ターゲツトを
蒸発させ、保護すべき基板表面に被着せしめる。
すなわち、スパツタする。なお還元性ガスは生成
した膜中の活性な点と反応し、安定化させる作用
を有する。
This olefin polymer formed into a film or formed as a coating on an aluminum plate is used as a target to reduce hydrogen, hydrocarbons, silane, phosphine, etc. with an inert gas such as argon, krypton, or xenon. The target is evaporated by ion bombardment in a mixed atmosphere of aggressive gases and deposited on the surface of the substrate to be protected.
In other words, it sputters. Note that the reducing gas has a stabilizing effect by reacting with active points in the produced film.

スパツタの方法としては、通常のRFまたはDC
スパツタ法、マグネトロン型RFまたはDCスパツ
タ法、イオンビームスパツタなどの公知の方法が
可能であるが、プラスチツクフイルムを基板とす
る金属薄膜型磁気記録媒体への保護膜形成におい
てはマグネトロン型RFスパツタ法が最適である。
このマグネトロン型RFスパツタ法の場合には、
混合ガス圧;10-4〜10-2Torr,ターゲツト電力
0.5〜5W/cm2の条件でFe,Co,Ni,それらの合
金、またはそれらと他の金属との合金からなる強
磁性金属薄膜上に直接、あるいは、Al,Crなど
の非磁性層を介して成膜速度1〜50Å/secで膜
厚50Å〜1000Åの保護膜を形成させた場合に、金
属薄膜の耐食性,磁気ヘツドに対する耐摩耗性の
著しい向上が見られる。以下、このことにつき具
体例で示す。
For sputtering methods, regular RF or DC
Known methods such as the sputtering method, magnetron type RF or DC sputtering method, and ion beam sputtering are possible, but the magnetron type RF sputtering method is used for forming a protective film on a metal thin film type magnetic recording medium using a plastic film as a substrate. is optimal.
In the case of this magnetron type RF sputtering method,
Mixed gas pressure: 10 -4 to 10 -2 Torr, target power
Directly on a ferromagnetic metal thin film made of Fe, Co, Ni, their alloys, or their alloys with other metals under conditions of 0.5 to 5 W/ cm2 , or via a nonmagnetic layer such as Al or Cr. When a protective film with a thickness of 50 Å to 1000 Å is formed at a deposition rate of 1 to 50 Å/sec, the corrosion resistance of the metal thin film and the wear resistance against magnetic heads are significantly improved. This will be explained below using a specific example.

実施例 厚さ15μmの長尺ポリエステルフイルム上に厚
さ0.2μmのCo強磁性薄膜を連続真空斜め蒸着法に
より形成し、テープに切断し、これを試料Aとし
た。この試料Aに下記の条件でスパタし、厚さ
100Åの保護膜を形成せしめた。これを試料Bと
した(実施例1)。
Example A Co ferromagnetic thin film with a thickness of 0.2 μm was formed on a long polyester film with a thickness of 15 μm by continuous vacuum oblique evaporation method and cut into tapes, which was designated as Sample A. This sample A was sputtered under the following conditions, and the thickness was
A protective film of 100 Å was formed. This was designated as Sample B (Example 1).

ターゲツト;ポリスチレンフイルム 厚さ100μm 雰囲気;4×10-2Torr,Ar+H2(10%) ターゲツト電力;2.5W/cm2 スパツタ時間;30sec 別の試料Aを用いて、下記の条件でスパツタ
し、厚さ100Åの保護膜を形成せしめた。これを
試料Cとした(実施例2)。
Target: Polystyrene film, thickness 100μm Atmosphere: 4×10 -2 Torr, Ar+H 2 (10%) Target power: 2.5W/cm 2 Sputtering time: 30sec Using another sample A, sputtering was performed under the following conditions, and the thickness was A protective film with a thickness of 100 Å was formed. This was designated as Sample C (Example 2).

ターゲツト;ポリ―α―メチルスチレンフイル ム 厚さ75μm 雰囲気;4×10-2Torr,Ar+H2(10%) ターゲツト電力;2.5W/cm2 スパツタ時間;30sec 別の試料Aを用いて、下記条件でスパツタし厚
さ100Åの保護膜を形成せしめた。これを試料D
とした(比較例) ターゲツト;ポリスチレンフイルム 厚さ100μm 雰囲気;4×10-2Torr,Ar ターゲツト電力;2.5W/cm2 スパツタ時間;60sec これらの試料を40℃,90%RH中に放置し、耐
湿テストを行なつた結果、光学顕微鏡で磁性面に
錆発生が確認されるまでに要した放置日数は、下
記の通りであつた。
Target: Poly-α-methylstyrene film thickness 75μm Atmosphere: 4×10 -2 Torr, Ar+H 2 (10%) Target power: 2.5W/cm 2 sputtering time: 30sec Using another sample A, the following conditions were applied. A protective film with a thickness of 100 Å was formed by sputtering. This is sample D
(Comparative example) Target: Polystyrene film 100 μm thick Atmosphere: 4×10 -2 Torr, Ar Target power: 2.5 W/cm 2 Sputtering time: 60 sec These samples were left at 40°C and 90% RH. As a result of a moisture resistance test, the number of days required for rust to be observed on the magnetic surface using an optical microscope was as follows.

試料A;12日(比較例) 〃 B;55日 〃 C;60日 〃 D;30日(比較例) また、別途に、上記各試料を市販の家庭用ビデ
オテープレコーダと同様の機能を有するスチルテ
スターにてスチル時間を測定した結果は下記の通
りであつた。
Sample A: 12 days (comparative example) B: 55 days C: 60 days D: 30 days (comparative example) In addition, each of the above samples was separately tested to have the same functions as a commercially available home video tape recorder. The still time was measured using a still tester and the results were as follows.

試料A;30分(比較例) 〃 B;75分 〃 C;80分 〃D;50分(比較例) 上記の例からも明らかなように、本発明によれ
ば膜厚100Å程度のスパツタ膜形成によつて強磁
性薄膜の耐食性,耐摩耗性を大巾に改善すること
ができ、工業的に非常に有用なものである。
Sample A: 30 minutes (comparative example) B: 75 minutes C: 80 minutes D: 50 minutes (comparative example) As is clear from the above examples, according to the present invention, a sputtered film with a thickness of about 100 Å By forming such a ferromagnetic thin film, the corrosion resistance and abrasion resistance of the ferromagnetic thin film can be greatly improved, and it is very useful industrially.

Claims (1)

【特許請求の範囲】[Claims] 1 金属薄膜型磁気記録媒体に保護膜を形成する
方法であつて、ポリスチレンまたは、ポリ―α―
メチルスチレンから成るターゲツトを、還元性ガ
スと不活性ガスの混合雰囲気中におけるスパツタ
リング法により蒸発させ、前記金属薄膜表面に被
着せしめることを特徴とする保護膜の形成方法。
1 A method for forming a protective film on a metal thin film magnetic recording medium, which method uses polystyrene or poly-α-
A method for forming a protective film, comprising evaporating a target made of methylstyrene by a sputtering method in a mixed atmosphere of a reducing gas and an inert gas, and depositing the target on the surface of the metal thin film.
JP56031839A 1981-03-04 1981-03-04 Formation of protective film Granted JPS57145977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56031839A JPS57145977A (en) 1981-03-04 1981-03-04 Formation of protective film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56031839A JPS57145977A (en) 1981-03-04 1981-03-04 Formation of protective film

Publications (2)

Publication Number Publication Date
JPS57145977A JPS57145977A (en) 1982-09-09
JPH0112832B2 true JPH0112832B2 (en) 1989-03-02

Family

ID=12342218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56031839A Granted JPS57145977A (en) 1981-03-04 1981-03-04 Formation of protective film

Country Status (1)

Country Link
JP (1) JPS57145977A (en)

Also Published As

Publication number Publication date
JPS57145977A (en) 1982-09-09

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