JPH01134458A - electrophotographic photoreceptor - Google Patents
electrophotographic photoreceptorInfo
- Publication number
- JPH01134458A JPH01134458A JP62294420A JP29442087A JPH01134458A JP H01134458 A JPH01134458 A JP H01134458A JP 62294420 A JP62294420 A JP 62294420A JP 29442087 A JP29442087 A JP 29442087A JP H01134458 A JPH01134458 A JP H01134458A
- Authority
- JP
- Japan
- Prior art keywords
- electrophotographic photoreceptor
- layer
- charge transport
- transport layer
- hardness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/06—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being organic
- G03G5/07—Polymeric photoconductive materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子写真方式の複写機、光プリンタ等に用い
られる電子写真感光体に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an electrophotographic photoreceptor used in electrophotographic copying machines, optical printers, and the like.
従来の技術
電子写真感光体において、光励起によりキャリア生成を
行う光導電層と、キャリア輸送を行う電荷輸送層を別々
の材料で構成する機能分離型電子写真感光体が広く用い
られている。この様に機能によって材料を選ぶことによ
って、高感度な電子写真特性を持つ優れた感光体を提供
できるのみでなく、機械的強度、熱的安定性、耐刷性、
耐環境性、製造コストといったさまざまな面に渡って幅
広い材料の中から最適の組合せを検討することができる
。2. Description of the Related Art Among electrophotographic photoreceptors, functionally separated electrophotographic photoreceptors are widely used in which a photoconductive layer that generates carriers by photoexcitation and a charge transport layer that transports carriers are made of different materials. By selecting materials according to function in this way, we can not only provide an excellent photoreceptor with highly sensitive electrophotographic properties, but also improve mechanical strength, thermal stability, printing durability,
You can consider the optimal combination from a wide range of materials in terms of environmental resistance, manufacturing cost, and other aspects.
このような材料の組合せの代表例として、有機材料を用
いた例として、スクエアリック酸メチルとトリアリール
ピラゾリン、ダイアンプルでとオキサジアゾール、ペリ
レン顔料とオキサジアゾール、ビスアゾ顔料とメチリア
アンスラセン 等がある。Typical examples of such material combinations using organic materials include methyl squarate and triarylpyrazoline, diampurus and oxadiazole, perylene pigment and oxadiazole, bisazo pigment and methylanthrazoline. Sen et al.
また、無機材料を光導電層とする例としては、無定型セ
レンとポリビニルカルバゾール、特開昭54−1436
45号公報には非晶質層シリコン系光導電層と有機半導
体材料を電荷輸送層に用いた機能分離型の感光体が、ま
た特開昭56−24355号公報には無機半導体材料を
電荷輸送層に用いた機能分離型感光体が提案されている
。Further, as an example of using an inorganic material as a photoconductive layer, amorphous selenium and polyvinyl carbazole, JP-A-54-1436
No. 45 discloses a functionally separated photoreceptor using an amorphous silicon-based photoconductive layer and an organic semiconductor material as a charge transport layer, and JP-A-56-24355 discloses a photoreceptor using an inorganic semiconductor material as a charge transport layer. A functionally separated photoreceptor using layers has been proposed.
この様な材料の中で特開昭55−90954号公報、お
よび特開昭60−59353号公報には、電荷輸送層と
してpps <ポリーP−フェニレンスルフィド)が高
い正孔移動度を持ち、あるいは、フィルムとして電荷輸
送層として用いることにより安価に製造できる優れた材
料として提案されている。Among such materials, JP-A-55-90954 and JP-A-60-59353 disclose that pps <poly P-phenylene sulfide) has high hole mobility or , has been proposed as an excellent material that can be manufactured at low cost by being used as a charge transport layer in the form of a film.
発明が解決しようとする問題点
機能分離型電子写真感光体において、より高感度の実現
するには、より小さな誘電率を持ち、より大きな移動度
とキャリア寿命を有する電荷輸送層と、高い電荷発生能
力を持つ光導電層の組合せが望ましい。しかしそれぞれ
の要求される所の条件を満足しても両者の間のキャリア
注入が効率良く行われなければなら力い。また電子写真
プロセスに於て要求される電荷受容能力、耐摩耗性、耐
環境性、等に十分満足するものでなければならない。Problems to be Solved by the Invention In order to achieve higher sensitivity in a function-separated electrophotographic photoreceptor, a charge transport layer with a smaller dielectric constant, greater mobility and carrier life, and a higher charge generation are required. A combination of capable photoconductive layers is desirable. However, even if the respective requirements are satisfied, carrier injection between the two must be carried out efficiently. It must also fully satisfy the charge-accepting ability, abrasion resistance, environmental resistance, etc. required in the electrophotographic process.
PPSは耐熱性、機械的加工精度に優れ高い電気抵抗を
有する絶縁体として知られ、プラスチック成形材料、封
止用材料として活用されている。PPS is known as an insulator that has excellent heat resistance, mechanical processing precision, and high electrical resistance, and is used as a plastic molding material and a sealing material.
一方、導電性材料比しても注目されており、他の高分子
材料(ポリ−アクリルニトリル等)と同様に電荷受容性
材料を添加することで著しく導電性が向上することはよ
く知られている。この時、キャリア移動度も共に向上し
電子写真感光体の電荷輸送層への応用が期待されたが、
キャリア濃度の増加によって電気抵抗が低下しているた
めに、要求されるだけの電荷受容能力を持たず改良が望
まれた。On the other hand, the comparison with conductive materials is also attracting attention, and it is well known that conductivity can be significantly improved by adding a charge-accepting material, similar to other polymeric materials (poly-acrylonitrile, etc.). There is. At this time, carrier mobility was also improved, and application to charge transport layers of electrophotographic photoreceptors was expected.
Since the electrical resistance decreased due to the increase in carrier concentration, it did not have the required charge-accepting ability, and improvements were desired.
特開昭60−59353号公報においては、PPSを真
空蒸着法によって薄膜化と電荷輸送能力を向上し電荷輸
送層として形成することを述べているが、一般にこの状
態では電荷輸送能力は小さく、感度、残留電位ともに十
分ではない。JP-A No. 60-59353 describes forming PPS as a charge transport layer by thinning it and improving its charge transport ability by vacuum evaporation, but generally in this state the charge transport ability is small and the sensitivity is low. , residual potential is not sufficient.
また、特開昭55−90954号公報においては、PP
Sフィルムを電荷輸送層に用いることが提案されている
。しかし、電荷輸送能力が十分ではないことから、光感
度は全く今日の電子写真感光体の実用レベルには至って
いない。In addition, in Japanese Patent Application Laid-open No. 55-90954, PP
It has been proposed to use S film as a charge transport layer. However, since the charge transport ability is not sufficient, the photosensitivity has not reached the practical level of today's electrophotographic photoreceptors.
以上の欠点を克服するため、種々検討を行った結果、P
PSを代表とする、P−フェニレンを有し、且つパラ位
にカルコゲン元素を有する直鎖状化合物高分子層を主成
分とする高分子層を、酸素原子を含む雰囲気中で加熱処
理を行うことによって、電荷輸送能力が飛躍的に向上す
ることを見いだした。In order to overcome the above drawbacks, we conducted various studies and found that P.
Heat-treating a polymer layer whose main component is a linear compound polymer layer containing P-phenylene and a chalcogen element at the para position, typified by PS, in an atmosphere containing oxygen atoms. We have found that the charge transport ability can be dramatically improved.
また、L記の雰囲気としてオゾン等のイオン化原子含む
雰囲気を用いれば加熱処理を行うことなく電荷輸送能力
を向上することができる。しかし、この状態での電荷輸
送層は光導電層の形成の際、真空中に保持し、加熱を行
うことにより著しく電荷輸送能力が低下する問題があっ
た。Further, if an atmosphere containing ionized atoms such as ozone is used as the atmosphere in L, the charge transport ability can be improved without performing heat treatment. However, the charge transporting layer in this state has a problem in that the charge transporting ability is significantly reduced when the photoconductive layer is formed while being held in a vacuum and heated.
また、PPS等のフィルムの硬度は小さく(鉛筆硬度で
3B以下)耐刷性においても十分ではないという問題が
あった。Further, there was a problem in that the hardness of films such as PPS is small (3B or less in terms of pencil hardness) and printing durability is not sufficient.
問題点を解決するための手段
光励起によってキャリアを発生する光導電層と、そのキ
ャリアを転送する電荷輸送層からなる機能分離型電子写
真感光体において、P−フエニレンを有し、パラ位にカ
ルコゲン元素を有する直鎖状化合物高分子層を主成分と
し、前記電荷輸送層の硬度を加熱処理によってビッカー
ス硬度において、10〜80とした電荷輸送層と光導電
層から構成する。Means for solving the problem A functionally separated electrophotographic photoreceptor consisting of a photoconductive layer that generates carriers by photoexcitation and a charge transport layer that transfers the carriers has P-phenylene and a chalcogen element at the para position. The photoconductive layer is composed of a charge transport layer and a photoconductive layer, the hardness of which is made to have a Vickers hardness of 10 to 80 by heat treatment.
作用
このようなPPSに代表される主鎖方向にP−フエニレ
ンを有し、パラ位にカルコゲン元素を有する構造の高分
子において、酸素を含む雰囲気で加熱処理を行うことに
より電荷輸送能力が著しく向上することは現在では十分
に解析が行われていない。しかし、現時点では以下のよ
うに考えることができる。Effect In a polymer with a structure such as PPS, which has P-phenylene in the main chain direction and a chalcogen element in the para position, the charge transport ability is significantly improved by heat treatment in an oxygen-containing atmosphere. This has not been sufficiently analyzed at present. However, at this point, we can think of the following.
一般には高分子におけるキャリアの移動は、高分子の主
鎖方向に沿っての電子軌道前のホッピング伝導で行われ
るが、そのキャリアの移動度は、隣合う軌道の重なりの
大きいほどホッピング確率が増し、増加する。P−フェ
ニレンのパラ位にあるカルコゲン元素が中性の状態であ
ると、隣合うP−フェニレンは、空間的にπ電子軌道が
、直交する配位状態にあり、移動度は小さい。しかしカ
ルコゲン元素が添加させた0原子により正に荷電し、イ
オン化した場合P−フェニレンの空間的ねじれは解消し
、π電子軌道は同一平面内に配置され、ホッピング確率
の増加とともに移動度の向上が図られると考えられる。Generally, carrier movement in polymers occurs through hopping conduction in front of electron orbits along the main chain direction of the polymer, but the carrier mobility increases as the overlap between adjacent orbits increases. ,To increase. When the chalcogen element at the para position of P-phenylene is in a neutral state, the π electron orbits of adjacent P-phenylenes are in a spatially orthogonal coordination state, and the mobility is small. However, when the chalcogen element is positively charged and ionized by the added 0 atom, the spatial twist of P-phenylene is resolved and the π electron orbitals are arranged in the same plane, resulting in an increase in hopping probability and an improvement in mobility. It is thought that this will be achieved.
また、上記の雰囲気としてオゾン等のイオン化原子含む
雰囲気を用゛いれば加熱処理を行うことなく電荷輸送能
力を向上することができるが、このようなフィルムでは
耐熱性に欠け、真空中の加熱によって容易にもとの電荷
輸送能力の小さい状態に復帰するものと考えられる。Furthermore, if an atmosphere containing ionized atoms such as ozone is used as the above atmosphere, the charge transport ability can be improved without heat treatment, but such films lack heat resistance and cannot be heated by heating in a vacuum. It is thought that it easily returns to its original state with low charge transport ability.
換言すれば、硬度の小さいこのようなPPS等のフィル
ムは(鉛筆硬度で3B以下)、イオン化状態では十分な
結合エネル゛ギーを持たないため、真空中の加熱等の処
理によって容易に結合イオンを放出し、中性状態に復帰
するものと考えられる。In other words, films such as PPS, which have low hardness (3B or less on pencil hardness), do not have sufficient binding energy in the ionized state, so bonded ions can be easily removed by treatments such as heating in a vacuum. It is thought that the substance is released and returns to a neutral state.
一方、オゾンを含む、あるいは単に酸素雰囲気中で加熱
処理を行ったものは、真空中で200℃以上加熱にも電
荷輸送能力の低下は見られない。On the other hand, in those heat-treated in an atmosphere containing ozone or simply in an oxygen atmosphere, no decrease in charge transport ability is observed even when heated at 200° C. or higher in vacuum.
これは、加熱処理によって、高分子層の結晶性の向上と
同時に熱硬化を生じ、電荷輸送能力の高い状態が安定に
維持できるものと考えられる。This is thought to be because heat treatment improves the crystallinity of the polymer layer and at the same time causes thermal hardening, allowing stable maintenance of a state with high charge transport ability.
また、硬化によって硬度が増すことにより、耐刷性にお
いても向上する。Furthermore, since the hardness increases through curing, printing durability also improves.
実施例
図は、本発明における最も基本的な電子写真感光体の一
実施例の断面を模式的に示したものである。The embodiment diagram schematically shows a cross section of one embodiment of the most basic electrophotographic photoreceptor of the present invention.
図に示す電子写真感光体は、電子写真感光体としての支
持体l上に、少なくとも主鎖方向にP−フェニレンを有
し、パラ位にカルコゲン元素を有する構造の高分子層を
、酸素を含む雰囲気で加熱処理を行なった高分子層から
なる電荷輸送層2と光導電層3とを有し、前記光導電層
3は一方で自由表面4を有している。The electrophotographic photoreceptor shown in the figure includes a polymer layer having a structure having P-phenylene at least in the main chain direction and a chalcogen element at the para position on a support l as an electrophotographic photoreceptor, and a polymer layer containing oxygen. It has a charge transport layer 2 made of a polymer layer heat-treated in an atmosphere and a photoconductive layer 3, and the photoconductive layer 3 has a free surface 4 on one side.
本発明において、光導電層としては、以下のようなシリ
コンを含む非晶質層、例えばa−5i(:II:X)、
a−5it−yCy(:H:XX0y<1)、 a−5
it−,0,(:H:X)(0<y<1)、 a−5i
+ −vN、(:H:X)(0<y<1)、 a−5+
+−zGez(:H:X)(0<z<1)、 a−(S
it−zGez)+−vNs+(:H:XXO<y、z
<1)、 a−(Sit−zGez)+−vO,,(:
It:X)(0<y、z<1)、またはa−(Sit
−zGet)+−yC+(’:H:XXO<y、z<1
)の単層、あるいはこれらの積層からなる層を用いるこ
とができる。また、yを連続的に変化させた場合も使用
できる。In the present invention, the photoconductive layer is an amorphous layer containing silicon such as a-5i (:II:X),
a-5it-yCy (:H:XX0y<1), a-5
it-, 0, (:H:X) (0<y<1), a-5i
+ -vN, (:H:X) (0<y<1), a-5+
+-zGez(:H:X)(0<z<1), a-(S
it-zGez)+-vNs+(:H:XXO<y,z
<1), a-(Sit-zGez)+-vO,,(:
It:X) (0<y, z<1), or a-(Sit
-zGet)+-yC+(':H:XXO<y, z<1
) or a stacked layer of these can be used. It can also be used when y is changed continuously.
カルコゲン元素を含む光導電層としては、A4J2Se
3.5e(Tcを含む)、GeSe等の非晶質層を用い
てもよい。また、この他にも、CdS、 CdSe、
CdTeの結晶粉体を樹脂により結着した層を形成して
もよい。A4J2Se is used as a photoconductive layer containing a chalcogen element.
An amorphous layer such as 3.5e (containing Tc) or GeSe may also be used. In addition to this, CdS, CdSe,
A layer may be formed by binding CdTe crystal powder with a resin.
この時の膜厚は、電荷輸送層は5〜50μm好適には1
0〜25μ閣、また光導電層の膜厚は0.11−1O7
z好適には0.2〜5μmとすれば良い。At this time, the thickness of the charge transport layer is 5 to 50 μm, preferably 1 μm.
0~25μ, and the film thickness of the photoconductive layer is 0.11-1O7
z The preferred range is 0.2 to 5 μm.
本発明において、更に電子写真特性を向上させるために
、図において支持体1と電荷輸送層2との間に、支持体
lから電荷輸送層2に注入するキャリアを効果的に阻止
するため障壁層を設けてもよい。In the present invention, in order to further improve the electrophotographic properties, a barrier layer is provided between the support 1 and the charge transport layer 2 in the figure to effectively prevent carriers from being injected from the support 1 into the charge transport layer 2. may be provided.
障壁層を形成する材料としては、A I 203、Ba
O1Ba02、Beos B i 203、CaO5C
e02、Ce20z、La2O3、Dy2O3、Lu2
O3、C「203、CuO1CLI20、Fed、 P
bO1M80.5rO1Ta20a、ThO2、ZrO
2、HfO2、T i 02、Ti05Si02、Ge
O2,5iO1GeO等の金属酸化物またはTiN、
AlN、 SnN、 NbN、 Tag、 GaN等の
金属窒化物、またはWC,SrC%TiC,等の金属炭
化物またはSiC,SiN、GeC,GeN、 BC
,ON等の絶縁物、ポリエチレン、ポリカーボネート、
ポリウレタン、ポリパラキシレン等の有機化合物が使用
される。Materials for forming the barrier layer include A I 203, Ba
O1Ba02, Beos B i 203, CaO5C
e02, Ce20z, La2O3, Dy2O3, Lu2
O3, C'203, CuO1CLI20, Fed, P
bO1M80.5rO1Ta20a, ThO2, ZrO
2, HfO2, Ti02, Ti05Si02, Ge
Metal oxides such as O2,5iO1GeO or TiN,
Metal nitrides such as AlN, SnN, NbN, Tag, GaN, or metal carbides such as WC, SrC%TiC, or SiC, SiN, GeC, GeN, BC
, ON and other insulators, polyethylene, polycarbonate,
Organic compounds such as polyurethane and polyparaxylene are used.
また、クリーニング性あるいは耐摩耗性あるいは耐コロ
ナ性を向上させるため、図において、自由表面4上に表
面被覆層を形成する。表面被覆層として好適な材料とし
ては、S+xO+−いS + x C+−い 5iXN
I−1% Ge+cOs−xs GexCt −X
ll GexN+−xb BxN+−x、88C+
−x−AIJ+−x(0<X<1)、およびこれらに水
素あるいはハロゲンを含有する層等の無機物、あるいは
ポリエチレンテレフタレート、ポリカーボネート、ポリ
プロピレン、ポリ塩化ビニル、ポリビニルアルコール、
ポリスチレン、ポリアミ、ド、ポリ四弗化iチレン、ポ
リ三弗化塩化エチレン、ポリ弗化ビニリデン、ポリウレ
タン等の合成樹脂などが上げられる。Furthermore, in order to improve cleaning properties, abrasion resistance, or corona resistance, a surface coating layer is formed on the free surface 4 in the figure. Materials suitable for the surface coating layer include S+xO+-S+xC+-5iXN
I-1% Ge+cOs-xs GexCt-X
ll GexN+-xb BxN+-x, 88C+
-x-AIJ+-x (0<X<1), and inorganic materials such as layers containing hydrogen or halogen, or polyethylene terephthalate, polycarbonate, polypropylene, polyvinyl chloride, polyvinyl alcohol,
Synthetic resins such as polystyrene, polyamide, polyethylene tetrafluoride, polyethylene chloride trifluoride, polyvinylidene fluoride, and polyurethane can be mentioned.
さらに、本発明において、上記のa−5i(:H:X)
、a−5!+−、c、(If:xXo<y<t)、 a
−5i1−.0.(:H:X)(0<y<1)、a−5
i+−、Nv(:H:XXO<y<1)、あるいはこれ
らにGe添加のこれらの膜中に、不純物を添加すること
により伝導性を制御し、所望の電子写真特性を得ること
ができる。p型缶導性を与えるp型不純物としては、周
期律表第■族すに属する8% A I −G a、In
等があり、好適にはB%AI、Gaが用いられ、n型伝
導性を与えるn型不純物としては、周期律表第v*bに
属するN、P−As%S b等が有り、好適にはP、A
sが用いられる。Furthermore, in the present invention, the above a-5i(:H:X)
, a-5! +-, c, (If:xXo<y<t), a
-5i1-. 0. (:H:X) (0<y<1), a-5
By adding impurities to i+-, Nv (:H:XXO<y<1), or Ge-added films, conductivity can be controlled and desired electrophotographic characteristics can be obtained. The p-type impurity that gives p-type conductivity is 8% A I -G a, In, which belongs to Group Ⅰ of the periodic table.
B%Al, Ga are preferably used, and as n-type impurities that provide n-type conductivity, N, P-As%Sb, etc. belonging to V*b of the periodic table are preferably used. P, A
s is used.
また、これらの不純物を添加する方法として、p型不純
物の場合〜B2116− BaH+s%B689% 8
51111SB8812、 BaH+4、 BF3
、 BCh、 BBr2、 AlCl3、 (
CH3)3A1、(C2Hs)3Al、(icJs)a
Al、 (CH3)3Ga、 (C2H6)3ム、I
nCH3、(C2Hs)31nを、n型不純物の場合、
N2、NH3、N01N20、NO2、pH3、P2H
4、PHal、PF3、PFs、PCl3、PCl5、
PBr3. Pars、PI3、ASH3、ASF3、
AsC13、AsBr3、SbH3、SbF3.5BF
s、5bCIi、5bCls等のガスを、あるいはこれ
らのガスを12.He、 Arで希釈したガスを、プラ
ズマCV、D法では、それぞれの膜形成時において、使
用する上記のSi原子等の原料ガスと混合して用いれば
良い、あるいは、反応性スパッタ法にはAr等のスパッ
タガスと混合して用いる。In addition, as a method of adding these impurities, in the case of p-type impurities ~B2116-BaH+s%B689% 8
51111SB8812, BaH+4, BF3
, BCh, BBr2, AlCl3, (
CH3)3A1, (C2Hs)3Al, (icJs)a
Al, (CH3)3Ga, (C2H6)3M, I
When nCH3, (C2Hs)31n is an n-type impurity,
N2, NH3, N01N20, NO2, pH3, P2H
4, PHal, PF3, PFs, PCl3, PCl5,
PBr3. Pars, PI3, ASH3, ASF3,
AsC13, AsBr3, SbH3, SbF3.5BF
s, 5bCIi, 5bCls, etc., or these gases in 12. In the plasma CV and D methods, a gas diluted with He or Ar may be mixed with the above-mentioned source gas such as Si atoms to be used during film formation, or in the reactive sputtering method, Ar may be used. It is used by mixing with other sputtering gases.
また、光導電層としては以下の有機半導体が用いること
ができる、(1)フタロシアニン顔料(PCと称す)例
えば 無金属Pc、XPc CX=Cu、Ni、Co、
Ti01M g、 S i (OH)2、等)、Al
ClPcC1、Ti0CIPcC1,InClPcC1
,InClPc、InBrPcBr等である。更に(2
)モノアゾ色業、ジスアゾ色素等のアゾ系色素 (3)
ペニレン酸無水物およびペニレン酸イミド等のペニレン
系顔料 (4)インジゴイド染料 (5)キナクリドン
顔料 (6)アントラキノン類、ピレンキノン類 等の
多環キノン類 (7)シアニン色素 (8)キサンチン
染料 (9)PVK/TNF等の電荷移動錯体 (10
)ビリリウム塩染料とポリカーボネイト樹脂から形成さ
れる共晶錯体 (11)アズレニウム塩化合物 等があ
る。In addition, the following organic semiconductors can be used as the photoconductive layer: (1) Phthalocyanine pigments (referred to as PC), such as metal-free Pc, XPc, CX=Cu, Ni, Co,
Ti01Mg, Si(OH)2, etc.), Al
ClPcC1, Ti0CIPcC1, InClPcC1
, InClPc, InBrPcBr, etc. Furthermore (2
) Azo dyes such as monoazo dyes and disazo dyes (3)
Penylene pigments such as penylene acid anhydride and penylene acid imide (4) Indigoid dyes (5) Quinacridone pigments (6) Polycyclic quinones such as anthraquinones and pyrenequinones (7) Cyanine dyes (8) Xanthine dyes (9) Charge transfer complexes such as PVK/TNF (10
) Eutectic complexes formed from biryllium salt dyes and polycarbonate resins (11) Azulenium salt compounds, etc.
これらの有機半導体の製膜には、真空蒸着法、デイプ塗
工法、イオンクラスタビーム法、電着法等が用いられる
。A vacuum evaporation method, a deep coating method, an ion cluster beam method, an electrodeposition method, etc. are used to form films of these organic semiconductors.
電荷輸送層である高分子層は2軸延伸によって配向され
たフィルムを用い、以下に述べるように石英ガラス基板
上に、あるいは電子写真感光体の導電性支持体上に酸素
を含む雰囲気中で加熱融着し形成し、必要に応じて更に
酸素中にて加熱処理を行った。The polymer layer, which is the charge transport layer, uses a film oriented by biaxial stretching, and as described below, it is heated in an oxygen-containing atmosphere on a quartz glass substrate or on a conductive support of an electrophotographic photoreceptor. They were fused and formed, and further heat-treated in oxygen if necessary.
一方、製膜後、高分子層の硬度を求めるため、石英ガラ
ス基板を使用し、基板上に10μm以上の厚さの膜を形
成し評価を行った。On the other hand, in order to determine the hardness of the polymer layer after film formation, a quartz glass substrate was used, and a film with a thickness of 10 μm or more was formed on the substrate and evaluated.
硬度の測定にはマイクロビッカース硬度計を用い、ダイ
アモンドの圧子の加重を10gとして測定を行った。The hardness was measured using a micro-Vickers hardness meter, with the load applied to the diamond indenter being 10 g.
また、未処理のPPSフィルムのような硬度の小さい膜
では、マイクロビッカース硬度計では、硬度の測定が不
正確なため、上記のように鉛筆硬度により評価を行った
。Furthermore, since the hardness of a film with low hardness such as an untreated PPS film is inaccurate with a micro-Vickers hardness meter, evaluation was performed using pencil hardness as described above.
以下実施例について述べる。Examples will be described below.
実施例1
石英ガラス基板上に、12、万、50μmの膜厚を持つ
PPSフィルムを重ね、更に均一性の向上を図るため、
上から離型剤としてテフロンをコートしたステンレス基
板を加重として重ね、酸素中にて280℃1時閏処理を
行ないPPSを融着した。このフィルムをマイクロビッ
カース硬度計を用いて硬度の測定を行ったところ、12
μmの膜厚では25±5.25μmの膜厚では15±5
.50μmの膜厚では7±2であった。Example 1 A PPS film with a film thickness of 12, 10,000, or 50 μm was layered on a quartz glass substrate, and in order to further improve the uniformity,
A stainless steel substrate coated with Teflon as a mold release agent was placed on top of the substrate as a weight, and PPS was fused by carrying out a one-hour immersion treatment at 280° C. in oxygen. When the hardness of this film was measured using a micro Vickers hardness meter, it was found to be 12
For a film thickness of μm, it is 25 ± 5. For a film thickness of 25 μm, it is 15 ± 5.
.. At a film thickness of 50 μm, it was 7±2.
これらの条件で、アルミニウム基板上にもPPSを融着
し電荷輸送層として形成した0次に、光導電層としてS
eを、約0.8μmの膜厚に真空蒸着法によって形成し
、電子写真感光体とした。Under these conditions, PPS was also fused onto the aluminum substrate to form a charge transport layer.
E was formed to a thickness of about 0.8 μm by vacuum evaporation to obtain an electrophotographic photoreceptor.
この時、12μmの膜厚のPPSを電荷輸送層とした電
子写真感光体を表面電位+600vに帯電処理を行い、
500nmの光で露光を行った。ところ照度換算で、半
減電位露光量は1.51ux−secと非常に高い感度
を示した。また、残留電位も50V以下と優れた特性を
示した。At this time, the electrophotographic photoreceptor with a charge transport layer made of PPS with a film thickness of 12 μm was charged to a surface potential of +600 V.
Exposure was performed with 500 nm light. However, in terms of illuminance, the half-potential exposure amount was 1.51 ux-sec, which showed very high sensitivity. Further, the residual potential was 50 V or less, which showed excellent characteristics.
また、2571mの膜厚のPPSを電荷輸送層とした電
子写真感光体は、上記と同じ条件で評価を行ったところ
、半減電位露光量はl 、21ux−secと高いもの
の残留電位がtoovとやや多い結果となった。In addition, when an electrophotographic photoreceptor with a charge transport layer made of PPS with a film thickness of 2571 m was evaluated under the same conditions as above, the half-potential exposure was as high as l and 21 ux-sec, but the residual potential was a little toov. There were many results.
しかし、50μmの膜厚のPPSを用いた電子写真感光
体は、残留電位が300〜350V以上と極めて高く、
実用レベルには至らなかった。However, an electrophotographic photoreceptor using PPS with a film thickness of 50 μm has an extremely high residual potential of 300 to 350 V or more.
It did not reach a practical level.
実施例2
次に、15μm膜厚のPPSフィルムをオゾン中にて1
00℃に加熱処理を行い、処理後、アルミニウムを電極
として蒸着し、反対面に光導電層としてAs25esを
真空中にて1.2μmの膜厚に、基板加熱温度100℃
で蒸着を行った。Example 2 Next, a PPS film with a thickness of 15 μm was soaked in ozone for 1 hour.
After the treatment, aluminum was vapor-deposited as an electrode, and As25es was deposited on the opposite side as a photoconductive layer to a thickness of 1.2 μm in vacuum, at a substrate heating temperature of 100°C.
Vapor deposition was performed using
一方、アルミニウム基板上に285℃で空気中で加熱融
着処理を行い、更に酸素中にて280℃9時閏処理を行
った。On the other hand, a heat fusion process was performed on the aluminum substrate at 285°C in air, and further a 9-hour leap process was performed at 280°C in oxygen.
前者のフィルムを石英基板上に接着し、硬度を測定した
ところ、5±2であった。一方、後者のPPSの硬度を
測定したところ60±5であった。The former film was adhered onto a quartz substrate and its hardness was measured to be 5±2. On the other hand, when the hardness of the latter PPS was measured, it was 60±5.
両者の電子写真感光体の表面に600vの電位に帯電処
理を行い、白色光にて露光を行ったところ、前者のもの
は残留電位250vと大きく実用には至らなかった。し
かし、後者の残留電位は80Vと低く、また感度も0.
71ux−3eCと非常に高い感度を示した。When the surfaces of both electrophotographic photoreceptors were charged to a potential of 600 V and exposed to white light, the former had a residual potential of 250 V, which was so large that it could not be put to practical use. However, the residual potential of the latter is as low as 80V, and the sensitivity is also 0.
It showed extremely high sensitivity of 71ux-3eC.
実施例3
次に、実施例2と同様に、アルミニウム基板上に15μ
m膜厚のPPSを融着し、更に酸素中にて280℃にて
12時間の処理を行ない、一方では、320℃にて6時
閘の処理を行った。Example 3 Next, similarly to Example 2, a 15 μm film was placed on an aluminum substrate.
PPS with a thickness of m was fused and further treated in oxygen at 280° C. for 12 hours, while at 320° C. for 6 hours.
前者の条件でのPPSフィルムの硬度は75±5であっ
た。しかし後者のフィルムは一部にクラックが発生し硬
度を測定したところ85±5であった。The hardness of the PPS film under the former condition was 75±5. However, cracks occurred in some parts of the latter film, and the hardness was 85±5 when measured.
前者の基板上を6インチの放電電極を有する平行平板型
の容量結合方式プラズマCVD装置内のアノード側に配
置し、反応容器内を5X to−’Torr以下に排気
後、基板を150〜200℃に加熱した。SiH4を1
0〜40scaw、 Ihhを10ppm+導入し、圧
力0.2〜1゜0Torr、高周波電力20〜100W
でa−5i :8層を光導電層として0.2〜1μ頼形
成した。更に、SiH4を10〜30SCCIl、 C
2H4を20〜40SCC1l導入し、圧ガ飢2〜1.
0Torr、高周波電力50〜150WでS!+−xc
x : H(0<x<1)を表面被覆層として0.08
〜0.3μ閘形成して電子写真感光体を作成した。The former substrate was placed on the anode side of a parallel plate type capacitively coupled plasma CVD apparatus having a 6-inch discharge electrode, and after evacuating the inside of the reaction vessel to 5X to Torr or less, the substrate was heated at 150 to 200°C. heated to. 1 SiH4
0 to 40 scaw, 10 ppm+ of Ihh introduced, pressure 0.2 to 1°0 Torr, high frequency power 20 to 100 W
A-5i: 8 layers were formed as photoconductive layers with a thickness of 0.2 to 1 μm. Furthermore, SiH4 is added to 10 to 30 SCCIl, C
Introduce 20-40 SCC 1l of 2H4 and pressurize 2-1.
S at 0 Torr and high frequency power of 50 to 150 W! +-xc
x: 0.08 with H (0<x<1) as the surface coating layer
An electrophotographic photoreceptor was prepared by forming a thickness of 0.3 μm.
前者の試料はプラズマに対する耐性も向上し、表面電位
500■に帯電処理を行った後、白色にて露光を行った
ところ、0.71ux−secと高い感度と残留電位1
00Vと実用レベルの感光体が得られた。The former sample also has improved resistance to plasma, and when exposed to white light after being charged to a surface potential of 500μ, it showed a high sensitivity of 0.71ux-sec and a residual potential of 1
00V, a photoreceptor with a practical level was obtained.
一方、後者の試料は、更にクラックが増加し、一部膜剥
離が発生した。On the other hand, in the latter sample, cracks further increased and some film peeling occurred.
実施例4
インフレーション法によって15μm膜厚の円筒状のP
PSフィルムを作成する。この時の延伸倍率を円筒軸上
の倍率を20〜30倍、円筒軸と直角方向の倍率を10
−15倍とした。また円筒フィルムの直径は92φとし
た。Example 4 Cylindrical P with a film thickness of 15 μm was formed by the inflation method.
Create PS film. At this time, the stretching magnification is 20 to 30 times on the cylinder axis, and 10 times in the direction perpendicular to the cylinder axis.
-15 times. The diameter of the cylindrical film was 92φ.
鏡面研磨した88φのアルミニウムドラムを上記の円筒
状PPSフィルムに挿入し、200℃に加熱し熱収縮に
よってアルミニウムドラム上にPPSを積層した。一方
、硬度測定用の石英基板上に融着した試料を上記のドラ
ムと同時に酸素中の加熱処理装置に設置し、285℃6
時閏の処理を行った。A mirror-polished 88φ aluminum drum was inserted into the above cylindrical PPS film, heated to 200° C., and PPS was laminated on the aluminum drum by heat shrinkage. On the other hand, a sample fused onto a quartz substrate for hardness measurement was placed in a heat treatment device in oxygen at the same time as the drum above, and
Processed the time leap.
硬度測定用の試料を用い、ビッカース硬度を測定したと
ころ、硬度55±4を示した。When Vickers hardness was measured using a sample for hardness measurement, it showed a hardness of 55±4.
また、上記ドラムを円筒回転型の真空蒸着装置内に配置
し、器内を5X fO−’Torr以下に排気後、基板
を25〜40℃にて光導電層として、無金属Pcを0.
2〜0.37tmの膜厚に蒸着した。無金属Pcは、蒸
着前に熱湯洗浄を2回、テトラヒト′0フラジ洗浄を1
回行い、精製を行った後、蒸着を行った。Further, the drum was placed in a cylindrical rotary type vacuum evaporation apparatus, and after evacuating the inside of the apparatus to 5X fO-'Torr or less, the substrate was heated at 25 to 40°C as a photoconductive layer, and a metal-free Pc was applied at 0.5 to 100°C.
The film was deposited to a thickness of 2 to 0.37 tm. Metal-free Pc was washed with hot water twice and Tetrahythm'0 flange washed once before vapor deposition.
After repeated purification, vapor deposition was performed.
このようにして得られた感光ドラムを表面電位600v
に帯電処理した後、白色光にて露光を行ったところ、半
減電位露光量は1.31υx”secと高い感度を示し
、残留電位も60V以下と十分小さい感光ドラムが得ら
れた。The photosensitive drum thus obtained had a surface potential of 600 V.
After being subjected to charging treatment, exposure to white light was performed, and a photosensitive drum was obtained which exhibited high sensitivity with a half-potential exposure amount of 1.31 υx"sec and a sufficiently small residual potential of 60 V or less.
実施例5
実施例4と同様に、アルミニウムドラム基板上に電荷輸
送層としてPPSフィルムを加熱収縮によって積層する
際、処理雰囲気に電子受容体として、T CN Q (
7,7,8,8,−テトラシアノキノジメタン)を添加
した雰囲気で加熱処理をおこなった。Example 5 Similarly to Example 4, when laminating a PPS film as a charge transport layer on an aluminum drum substrate by heat shrinkage, T CN Q (
The heat treatment was performed in an atmosphere to which 7,7,8,8,-tetracyanoquinodimethane) was added.
更に、酸素中の加熱処理装置に設置し、265℃6時間
の処理を行った。Furthermore, it was placed in a heat treatment apparatus in oxygen and was treated at 265° C. for 6 hours.
同じく、硬度測定用の試料としてフィルムを同時に処理
し、石英基板上に接着し硬度を測定した。Similarly, a film was simultaneously treated as a sample for hardness measurement, and the hardness was measured by adhering it onto a quartz substrate.
このときのフィルム硬度は25±4であった。The film hardness at this time was 25±4.
また、上記ドラムをCdS光導電性粉体と、結着樹脂を
100: 20重量部加えた(結着樹脂はポリウレタン
樹脂)溶液中に浸漬し、170℃で30分乾燥処理を行
い5μmの光導電層を形成した。In addition, the drum was immersed in a solution containing 100:20 parts by weight of CdS photoconductive powder and a binder resin (the binder resin was a polyurethane resin), dried at 170°C for 30 minutes, and exposed to 5 μm light. A conductive layer was formed.
このようにして得られた感光ドラムを、表面電位600
vに帯電処理を行った後、白色光にて露光を行ったとこ
ろ、半減電位露光量は2.31ux−secと高い感度
を示し、残留電位も90V以下と十分小さい感光ドラム
が得られた。The photosensitive drum thus obtained had a surface potential of 600
After performing the charging process on V, exposure to white light was performed, and a photosensitive drum was obtained that exhibited high sensitivity with a half-potential exposure amount of 2.31 ux-sec and a sufficiently small residual potential of 90 V or less.
ここでは、電子受容体としてTCNQを用いたが、SO
3、A S F s等を用いても同様である。Here, TCNQ was used as an electron acceptor, but SO
3. The same thing can be done using A S F s or the like.
また、PPSを主成分とするフィルムを電荷輸送層とし
て用いたが、主鎖方向にP−フェニレンを有し、パラ位
に他のカルコゲン元素を有する構造の高分子においても
、同様な効果が得られる。In addition, although a film containing PPS as the main component was used as the charge transport layer, similar effects can be obtained with polymers having a structure that has P-phenylene in the main chain direction and other chalcogen elements in the para position. It will be done.
実施例6
図面とは逆に、光導電層を基板に配置した例について記
す。Example 6 Contrary to the drawings, an example in which a photoconductive layer is disposed on a substrate will be described.
鏡面研磨した15cm角のアルミニウム基板を6インチ
の放電電極を有する平行平板型の容量結合方式プラズマ
CVD装置内に配置し、反応容器内を5X 10−’T
orr以下に排気後、基板を250℃以上、好ましくは
280〜320℃に加熱した。つぎに5iHaを10〜
40secm導入し、炭素源としてC2H2をSi原子
に対しC原子が、1〜25atmXどなるよう混合し、
水素ガスにて全体のガスを5%以下に希釈したガスを圧
力0.2〜l 、0Torr、高周波電力20〜100
Wでa−5it−、C,:8層を光導電層として0.5
〜5μm形成した。A mirror-polished 15 cm square aluminum substrate was placed in a parallel plate type capacitively coupled plasma CVD device with a 6 inch discharge electrode, and the interior of the reaction vessel was set at 5X 10-'T.
After evacuation to below orr, the substrate was heated to 250°C or higher, preferably 280 to 320°C. Next, 5iHa from 10 to
40 sec was introduced, and C2H2 was mixed as a carbon source so that C atoms were mixed with Si atoms in an amount of 1 to 25 atmX.
Gas diluted to 5% or less with hydrogen gas at a pressure of 0.2 to 1 liters, 0 Torr, and high frequency power of 20 to 100
W with a-5it-, C,: 0.5 as photoconductive layer with 8 layers
~5 μm was formed.
更ニ、25IIIIIのPPS高分子フィルムを密着さ
せ端部を固定し空気中にて、280〜290℃の温度で
1〜5時閏酸索雰囲気中で加熱し融着させ、電荷移動層
として形成して電子写真感光体を作成した。Further, the PPS polymer film of 25III is adhered tightly and the edges are fixed, and heated in air at a temperature of 280 to 290°C for 1 to 5 hours in a saccharide atmosphere to fuse and form a charge transfer layer. An electrophotographic photoreceptor was prepared.
この時のPPSの硬度は、50±4であった。The hardness of PPS at this time was 50±4.
この感光体を一500Vに帯電させ同じく白色光にて露
光したところ、半減電位露光量は!“、01ux*se
c以下と感度は非常に向上した。また、残留電位も一8
0V以下と優れた特性を得ることができた。When this photoreceptor was charged to -500V and exposed to white light, the potential exposure amount was halved! “,01ux*se
Sensitivity was significantly improved to below c. Also, the residual potential is 18
It was possible to obtain excellent characteristics of 0V or less.
また、この際a−S++−xcxrH層と基板の間に、
電荷注入阻止層として、0.1μmのa−5it−xN
x:8層を挿入すれば、電荷保持能力が向上し、コント
ラストの高−い画像が得られた。Also, at this time, between the a-S++-xcxrH layer and the substrate,
As a charge injection blocking layer, 0.1 μm a-5it-xN
By inserting x:8 layers, the charge retention ability was improved and an image with high contrast was obtained.
発明の効果
光励起によってキャリアを発生する光導電層と、そのキ
ャリアを転送する電荷輸送層からなる機能分離型電子写
真感光体において、P−フェニレンを有し、パラ位にカ
ルコゲン元素を有する直鎖軟化合物高分子層を主成分と
し、前記電荷輸送層の硬度が加熱処理を行うことにより
、ビッカース硬度において、■θ〜80となるように形
成することにより、高感度、低残留電位の電子写真感光
体を得るものである。更に電荷輸送層層の製造が、高分
子の融着で行えることで、安価な電子写真感光体を提供
できる。Effects of the Invention In a function-separated electrophotographic photoreceptor consisting of a photoconductive layer that generates carriers by photoexcitation and a charge transport layer that transfers the carriers, a straight-chain soft material containing P-phenylene and a chalcogen element at the para position is used. By forming the charge transport layer, which has a compound polymer layer as its main component, by heat treatment so that the Vickers hardness is ■θ~80, electrophotographic sensitization with high sensitivity and low residual potential can be achieved. It is something that gives you a body. Furthermore, since the charge transport layer can be manufactured by polymer fusing, an inexpensive electrophotographic photoreceptor can be provided.
また、このような感光体は耐刷性にも優れ長寿命で、加
熱処理にも安定な特性を維持するものである。In addition, such a photoreceptor has excellent printing durability, has a long life, and maintains stable characteristics even when subjected to heat treatment.
更に、硬度が向上することによってプラズマに対する耐
性も向上し、非晶質シリコン等のプラズマを用いる光導
電層の形成プロセスにも、プラズマによるダメージもな
く膜堆積が可能となった。Furthermore, the improved hardness also improves resistance to plasma, making it possible to deposit films without damage caused by plasma in the process of forming a photoconductive layer using plasma such as amorphous silicon.
図は、本発明の実施例における電子写真感光体の断面図
である。
l・・・支持体、2・・・電荷輸送層、3・・・光導電
層、4・・・自由表面。The figure is a sectional view of an electrophotographic photoreceptor in an example of the present invention. 1... Support, 2... Charge transport layer, 3... Photoconductive layer, 4... Free surface.
Claims (8)
よってキャリアを発生する光導電層と、そのキャリアを
転送する電荷輸送層を積層してなる機能分離型電子写真
感光体において、前記電荷輸送層がP−フェニレンを有
し、且つパラ位にカルコゲン元素を有する直鎖状化合物
高分子層を主成分とし、硬度がビッカース硬度において
、10〜80である電子写真感光体。(1) A functionally separated electrophotographic photoreceptor in which a photoconductive layer that generates carriers by photoexcitation and a charge transport layer that transfers the carriers are laminated on at least a conductive support, wherein the charge transport layer An electrophotographic photoreceptor, the main component of which is a linear compound polymer layer having P-phenylene and a chalcogen element at the para position, and having a hardness of 10 to 80 on the Vickers scale.
る特許請求の範囲第1項記載の電子写真感光体。(2) The electrophotographic photoreceptor according to claim 1, characterized in that the charge transport layer contains O atoms.
する特許請求の範囲第1項または第2項記載の電子写真
感光体。(3) The electrophotographic photoreceptor according to claim 1 or 2, wherein an electron acceptor is added to the charge transport layer.
含む非単結晶層である特許請求の範囲第1項記載の電子
写真感光体。(4) The electrophotographic photoreceptor according to claim 1, wherein the photoconductive layer is a non-single crystal layer containing a modifier that reduces spin density.
素のいずれかを含む特許請求の範囲第4項記載の電子写
真感光体。(5) The electrophotographic photoreceptor according to claim 4, wherein the photoconductive layer contains at least either hydrogen or a halogen element.
単結晶層を有する特許請求の範囲第1項記載の電子写真
感光体。(6) The electrophotographic photoreceptor according to claim 1, wherein the photoconductive layer has a non-single crystal layer containing at least chalcogen atoms.
Bの元素を含有する特許請求の範囲第4項記載の電子写
真感光体。(7) The electrophotographic photoreceptor according to claim 4, wherein the photoconductive layer contains an element of Group III B or Group V of the periodic table.
第1項記載の電子写真感光体。(8) The electrophotographic photoreceptor according to claim 1, wherein a surface coating layer is formed on the free surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62294420A JPH01134458A (en) | 1987-11-20 | 1987-11-20 | electrophotographic photoreceptor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62294420A JPH01134458A (en) | 1987-11-20 | 1987-11-20 | electrophotographic photoreceptor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01134458A true JPH01134458A (en) | 1989-05-26 |
Family
ID=17807526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62294420A Pending JPH01134458A (en) | 1987-11-20 | 1987-11-20 | electrophotographic photoreceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01134458A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138381A (en) * | 1989-12-27 | 1992-08-11 | Minolta Camera Kabushiki Kaisha | Image forming apparatus equipped with separating pawl with specified surface roughness |
-
1987
- 1987-11-20 JP JP62294420A patent/JPH01134458A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138381A (en) * | 1989-12-27 | 1992-08-11 | Minolta Camera Kabushiki Kaisha | Image forming apparatus equipped with separating pawl with specified surface roughness |
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