JPH01137529U - - Google Patents

Info

Publication number
JPH01137529U
JPH01137529U JP3331088U JP3331088U JPH01137529U JP H01137529 U JPH01137529 U JP H01137529U JP 3331088 U JP3331088 U JP 3331088U JP 3331088 U JP3331088 U JP 3331088U JP H01137529 U JPH01137529 U JP H01137529U
Authority
JP
Japan
Prior art keywords
wafer
resist
wafers
plasma
remove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3331088U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3331088U priority Critical patent/JPH01137529U/ja
Publication of JPH01137529U publication Critical patent/JPH01137529U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第3図は本考案の一実施例による
レジスト灰化用石英治具の構成を示すもので、第
1図はその平面図、第2図は立面図、第3図は側
面図である。 1:プラズマ遮蔽板、2:石英棒、3:溝、4
,5:結合部材。
Figures 1 to 3 show the structure of a quartz jig for resist ashing according to an embodiment of the present invention, in which Figure 1 is a plan view, Figure 2 is an elevation view, and Figure 3 is a side view. It is a diagram. 1: Plasma shielding plate, 2: Quartz rod, 3: Groove, 4
, 5: Connection member.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] プラズマ中で表面にレジストが付着している多
数のウエーハから一括して前記表面のレジストを
灰化除去するためウエーハを互いに平行にかつ所
定の間隔をおいて並置せしめるバツチ式のレジス
ト灰化用石英治具であつて、前記並置されたウエ
ーハ中両端または1端にあるウエーハの外側で該
ウエーハからウエーハの並び間隔にほぼ等しい間
隔をおいた位置にウエーハと平行にウエーハと同
径以上のプラズマ遮蔽板が設置され、前記両端ま
たは1端にあるウエーハの外側の面をプラズマ中
のイオン衝撃から保護しつつレジスト除去を行わ
しめることを特徴とするレジスト灰化用石英治具
。
Quartz for resist ashing of batch type in which wafers are arranged parallel to each other at a predetermined interval in order to ash and remove the resist on the surface of a large number of wafers having resist attached to their surfaces in a plasma. The jig is a plasma shielding device having a diameter equal to or larger than that of the wafer and parallel to the wafer at a position on the outside of the wafer at both ends or one end of the juxtaposed wafers and spaced from the wafer at a distance approximately equal to the distance between the wafers. A quartz jig for resist ashing, characterized in that a plate is installed to remove the resist while protecting the outer surface of the wafer at both ends or one end from ion bombardment in plasma.
JP3331088U 1988-03-14 1988-03-14 Pending JPH01137529U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3331088U JPH01137529U (en) 1988-03-14 1988-03-14

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3331088U JPH01137529U (en) 1988-03-14 1988-03-14

Publications (1)

Publication Number Publication Date
JPH01137529U true JPH01137529U (en) 1989-09-20

Family

ID=31259964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3331088U Pending JPH01137529U (en) 1988-03-14 1988-03-14

Country Status (1)

Country Link
JP (1) JPH01137529U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59161825A (en) * 1983-03-07 1984-09-12 Mitsubishi Electric Corp Manufacture of semiconductor element
JPS6117730B2 (en) * 1975-12-15 1986-05-09 Ricoh Kk

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6117730B2 (en) * 1975-12-15 1986-05-09 Ricoh Kk
JPS59161825A (en) * 1983-03-07 1984-09-12 Mitsubishi Electric Corp Manufacture of semiconductor element

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