JPH01137529U - - Google Patents
Info
- Publication number
- JPH01137529U JPH01137529U JP3331088U JP3331088U JPH01137529U JP H01137529 U JPH01137529 U JP H01137529U JP 3331088 U JP3331088 U JP 3331088U JP 3331088 U JP3331088 U JP 3331088U JP H01137529 U JPH01137529 U JP H01137529U
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- resist
- wafers
- plasma
- remove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 9
- 238000010849 ion bombardment Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第1図ないし第3図は本考案の一実施例による
レジスト灰化用石英治具の構成を示すもので、第
1図はその平面図、第2図は立面図、第3図は側
面図である。
1:プラズマ遮蔽板、2:石英棒、3:溝、4
,5:結合部材。
Figures 1 to 3 show the structure of a quartz jig for resist ashing according to an embodiment of the present invention, in which Figure 1 is a plan view, Figure 2 is an elevation view, and Figure 3 is a side view. It is a diagram. 1: Plasma shielding plate, 2: Quartz rod, 3: Groove, 4
, 5: Connection member.
Claims (1)
数のウエーハから一括して前記表面のレジストを
灰化除去するためウエーハを互いに平行にかつ所
定の間隔をおいて並置せしめるバツチ式のレジス
ト灰化用石英治具であつて、前記並置されたウエ
ーハ中両端または1端にあるウエーハの外側で該
ウエーハからウエーハの並び間隔にほぼ等しい間
隔をおいた位置にウエーハと平行にウエーハと同
径以上のプラズマ遮蔽板が設置され、前記両端ま
たは1端にあるウエーハの外側の面をプラズマ中
のイオン衝撃から保護しつつレジスト除去を行わ
しめることを特徴とするレジスト灰化用石英治具
。 Quartz for resist ashing of batch type in which wafers are arranged parallel to each other at a predetermined interval in order to ash and remove the resist on the surface of a large number of wafers having resist attached to their surfaces in a plasma. The jig is a plasma shielding device having a diameter equal to or larger than that of the wafer and parallel to the wafer at a position on the outside of the wafer at both ends or one end of the juxtaposed wafers and spaced from the wafer at a distance approximately equal to the distance between the wafers. A quartz jig for resist ashing, characterized in that a plate is installed to remove the resist while protecting the outer surface of the wafer at both ends or one end from ion bombardment in plasma.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3331088U JPH01137529U (en) | 1988-03-14 | 1988-03-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3331088U JPH01137529U (en) | 1988-03-14 | 1988-03-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01137529U true JPH01137529U (en) | 1989-09-20 |
Family
ID=31259964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3331088U Pending JPH01137529U (en) | 1988-03-14 | 1988-03-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01137529U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59161825A (en) * | 1983-03-07 | 1984-09-12 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
| JPS6117730B2 (en) * | 1975-12-15 | 1986-05-09 | Ricoh Kk |
-
1988
- 1988-03-14 JP JP3331088U patent/JPH01137529U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6117730B2 (en) * | 1975-12-15 | 1986-05-09 | Ricoh Kk | |
| JPS59161825A (en) * | 1983-03-07 | 1984-09-12 | Mitsubishi Electric Corp | Manufacture of semiconductor element |
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