JPH01143227A - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device

Info

Publication number
JPH01143227A
JPH01143227A JP62300979A JP30097987A JPH01143227A JP H01143227 A JPH01143227 A JP H01143227A JP 62300979 A JP62300979 A JP 62300979A JP 30097987 A JP30097987 A JP 30097987A JP H01143227 A JPH01143227 A JP H01143227A
Authority
JP
Japan
Prior art keywords
solder
aluminum
heat dissipation
dissipation plate
aluminum heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62300979A
Other languages
Japanese (ja)
Inventor
Masayuki Kataoka
正行 片岡
Eiji Kobayashi
栄治 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62300979A priority Critical patent/JPH01143227A/en
Publication of JPH01143227A publication Critical patent/JPH01143227A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips

Landscapes

  • Manufacturing Of Electrical Connectors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To relieve a thermal stress between an aluminum heat dissipation plate and a metallized substrate and eliminate crackings in a solder bonding part by a method wherein an iron plate is bonded to the aluminum heat dissipation plate beforehand by an ultrasonic compression bonding method and the metallized substrate, a copper heat dissipation plate and a power transistor chip are soldered on the iron plate. CONSTITUTION:An iron plate 10 is bonded to an aluminum heat dissipation plate 1 beforehand by an ultrasonic compression bonding method and a solder pellet 9, a metallized substrate 2, a solder pellet 9, a copper heat dissipation plate 3, a solder pellet 9 and a power transistor chip 4 are piled up on the iron plate 10 in this order. Then the piled-up unit is put into a hydrogen furnace whose temperature is higher than the melting point of solder to melt the solder pellets 9 and, further, is cooled down to complete the respective solder joints. After that, a thick film substrate 5 on which a flip chip 6 and aluminum pieces 7 are mounted is mounted on the predetermined position of the aluminum heat dissipation plate 1 and, further, aluminum wires 8 are bonded to the bonding pads 4a of the transistor chip 4 and to the aluminum pieces 7 on the thick film substrate 5 by an ultrasonic bonding method.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明はイグナイタ及びパワーユニット等の苛酷な使
用環境でかつ、高信頼性を要求されている混成集積回路
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to hybrid integrated circuit devices such as igniters and power units that are used in harsh environments and are required to have high reliability.

〔従来の技術〕[Conventional technology]

第２図はイグナイタ用混成集積回路装置を示す平面図で
あり、図に卦いて、（１）はアルミニウム（以下アルミ
と略称する）放熱板、（２）はアルミ放熱板（１）上に
装着されたメタライズ基板、（３）はメタライズ基板（
２）上に装着された銅放熱板、（４）はさらに銅放熱板
（３）に装着されたパワートランジスタチップを示す。Figure 2 is a plan view showing a hybrid integrated circuit device for an igniter.In the figure, (1) is an aluminum (hereinafter abbreviated as aluminum) heat sink, and (2) is mounted on an aluminum heat sink (1). (3) is a metallized substrate (
2) a copper heat sink mounted on top; (4) further shows a power transistor chip mounted on the copper heat sink (3);

又（５）は厚膜基板でアルミ放熱板（１）に装着されて
おり、厚膜基板（５）上にはフリップチップＩ　Ｏ＋６
＋及びアルミ片（７）等の部品が装着されている。Also, (5) is a thick film substrate attached to the aluminum heat sink (1), and a flip chip I O+6 is mounted on the thick film substrate (5).
parts such as + and aluminum piece (7) are attached.

前記パワートランジスタ部及び後記の厚膜基板部はそれ
ぞれパワートランジスタチップ（４）上のボンデング＆
５（４ａ）とアルミ片（７）とをアルミワイヤ（８）に
て接続されている。The power transistor section and the thick film substrate section described below are bonded and bonded on the power transistor chip (4), respectively.
5 (4a) and the aluminum piece (7) are connected by an aluminum wire (8).

第３図は従来技術によるパワートランジスタチップ部の
断面を示すものでメツキ法によってニッケル（Ｎ１）メ
ツキが施されたアルミ放熱板（１）上にメタライズ加工
されたアルミナ基板にＮ１メツキ加工を施したメタライ
ズ基板（２）、さらに、Ｎ１メツキ加工を施した銅放熱
板（３）、さらにその上に、パワートランジスタチップ
（４）を配置し、錫（ａｎ）　５　％　、鉛（Ｐ″ｏ）
９５％の組成を有する半田ペレット（９）を各々の部品
間に接合材として用いている。これらはアルミ放熱板（
１）上の所定の個所に下部品から積み上げ、さらに、半
田の融点以上の高温を有する水素炉に通し、半田ペレッ
ト（９）を溶融させた後、室温にて冷却させ、各々の部
品を半田接合し、さらに前記アルミ放熱板（１１の所定
位置にフリップチップエＣ（６）及びアルミ片（７）を
搭載した厚膜基板（５）を装着させ、超音波ボンディン
グによりパワートランジスタ（４）のポンディングパッ
ド（４ａ）とアルミ片（７）とにアルミワイヤ（８）を
配線して成っていた。Figure 3 shows a cross section of a power transistor chip part according to the prior art, in which N1 plating was applied to an alumina substrate metallized on an aluminum heat sink (1) that was plated with nickel (N1) using the plating method. A metallized substrate (2), a copper heat dissipation plate (3) with N1 plating, and a power transistor chip (4) placed on top of it are made of 5% tin (an) and lead (P″o).
Solder pellets (9) having a composition of 95% are used as a bonding material between each component. These are aluminum heat sinks (
1) Stack the lower parts on top at a predetermined location, then pass through a hydrogen furnace with a temperature higher than the melting point of the solder to melt the solder pellets (9), cool at room temperature, and solder each part. After bonding, a thick film substrate (5) on which a flip chip E C (6) and an aluminum piece (7) are mounted is attached to the predetermined position of the aluminum heat sink (11), and the power transistor (4) is bonded by ultrasonic bonding. It consisted of an aluminum wire (8) wired between a bonding pad (4a) and an aluminum piece (7).

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の混成集積回路装置のパワートランジスタチップ部
は以上のように構成されているのでイグナイタのように
苛酷な条件で使用された場合、常温から百数十°Ｃの温
度変化が加わるので、特に、アルミ放熱板とメタライズ
基板とのＭｌ膨張係数が著しく異るため熱応力によシ半
田接合部にクラックが発生し、信頼性を著しくは下させ
る問題点があった。Since the power transistor chip part of a conventional hybrid integrated circuit device is configured as described above, when used under harsh conditions such as in an igniter, the temperature changes from room temperature to more than 100 degrees Celsius, so Since the Ml expansion coefficients of the aluminum heat sink and the metallized substrate are significantly different, cracks occur in the solder joints due to thermal stress, resulting in a problem that significantly lowers reliability.

この発明は上記のような問題点を解消するためになされ
たもので、アルミ放熱板とメタライズ基板との間の熱応
力の緩和を計シ半田接合部のクラックの問題を解消する
ことができる高信頼性の混成集積回路装置を得ることを
目的とする。This invention was made in order to solve the above-mentioned problems, and it is designed to alleviate the thermal stress between the aluminum heat sink and the metallized board, and is capable of solving the problem of cracks in the solder joint. The purpose is to obtain a reliable hybrid integrated circuit device.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

この発明に係る混成集積回路装置は、アルミ放熱板にあ
らかじめ超音波圧接法により鉄板を接合させたものを用
いてメタライズ基板、銅放熱板さらにパワートランジス
タチップを前記鉄板上に半田けしだものである。The hybrid integrated circuit device according to the present invention uses a metallized substrate, a copper heat sink, and a power transistor chip that are soldered onto the iron plate using an aluminum heat sink that has been previously bonded to a steel plate by ultrasonic pressure welding. .

〔作用〕[Effect]

この発明はアルミ放熱板の線膨張係数２３．６　Ｘ１０
−６／”Ｃとメタライズ基板の線膨張係数７　Ｘ　１０
−６／Ｃの中間に位置する鉄板（１１，’７　Ｘ　１０
−６／Ｃ）をアルミ放熱板とメタライズ基板との間に配
置したので熱応力の緩和を行うことが出来る。更にアル
ミ放熱板と鉄板との接合に超音波圧接法を１目いたので
、この部分の接合が確実になる。This invention has a linear expansion coefficient of 23.6 x 10 for an aluminum heat sink.
-6/”C and linear expansion coefficient of metallized substrate 7 x 10
Iron plate located between -6/C (11,'7 X 10
-6/C) is placed between the aluminum heat sink and the metallized substrate, thermal stress can be alleviated. Additionally, ultrasonic pressure welding was used to join the aluminum heat sink and the steel plate, making this part a reliable joint.

〔発明の実施例〕[Embodiments of the invention]

第１図は本発明の一実施例金示す断面図である。 FIG. 1 is a sectional view showing one embodiment of the present invention.

必らかじめ、鉄板α■を超音波圧接法により接合された
アルミ放熱板（１）の前記鉄板Ｑｌに半田ペレット（９
）、メタライズ基板（２）、半田ペレット（９）、銅放
熱板（３）、半田ペレット（９）、さらにパワートラン
ジスタチップ（４）を頭に積みＥげる。その後、半田の
融点以上の高温を有する水素炉に通し、半田ペレット（
９）を溶融させさらに室温に冷却して、各部の半田接合
を完了させる。尚鉄板Ｃ１１、メタライズ基板（２）、
銅放熱板（３）の半田接合面はいずれも半田ぬれ性を良
くするためＮ１メツキ加工があらかじめ施されている。Be sure to apply solder pellets (9
), a metallized substrate (2), a solder pellet (9), a copper heat sink (3), a solder pellet (9), and a power transistor chip (4). After that, the solder pellets (
9) is melted and further cooled to room temperature to complete soldering of each part. Iron plate C11, metallized substrate (2),
The solder joint surfaces of the copper heat sink (3) are all pre-plated with N1 to improve solder wettability.

その後、第２図に示したように、フリップチップ（６）
及びアルミ片（力の搭載された厚膜基板（５）を前記ア
ルミ放熱板（１）の所定個所に装着させ、さらに超音波
ボンディングによりパワートランジスタチップ（４）の
ポンディングパッド（４ａ）と厚膜基板（５）上のアル
ミ片（力とにアルミワイヤ（８）を配線して成っている
。Then, as shown in Figure 2, the flip chip (6)
A thick film substrate (5) loaded with an aluminum piece (force) is attached to a predetermined location of the aluminum heat sink (1), and the thickness is bonded to the bonding pad (4a) of the power transistor chip (4) by ultrasonic bonding. It consists of an aluminum wire (8) wired to a piece of aluminum on a membrane substrate (5).

前記にて本発明の一実施例の説明を行ったが、本発明の
特徴はアルミ放熱板とメタライズ基４Ｊｉ間に鉄板を介
在したこと及びアルミ放熱板へ超音波圧接法で鉄板を接
合したことである。これは前述のとおシ、アルミ放熱板
とメタライズ基板との線膨張係数澹々２３．６　Ｘ　１
０−６／”Ｃと７Ｘ１０’″６／Ｃでその差が大きいの
で熱応力によるひずみが大きく、半田接合部にクラック
が入り信頼性を著しく回正させる原因となっていたが、
本発明はアルミ放熱板とメタライズ基板との間に線膨張
係数１１．７　Ｘ　１０−６／Ｃの鉄板を介在させるこ
とによシアルミ放熱板と鉄板との間及び鉄板とメタライ
ズ基板との間の線膨張係数の差は縮まシ熱応力によるひ
ずみ量を緩和することができること及び半田材のもろさ
によυ発生していた半田接合部のクラックをアルミ放熱
板へ超音波圧接法にて鉄板を接合したので解決すること
が出来る。An embodiment of the present invention has been described above, and the features of the present invention are that an iron plate is interposed between the aluminum heat sink and the metallized substrate 4Ji, and that the iron plate is bonded to the aluminum heat sink by ultrasonic pressure welding. It is. As mentioned above, the coefficient of linear expansion between the aluminum heat sink and the metallized substrate is approximately 23.6 x 1.
Since the difference between 0-6/"C and 7X10'"6/C is large, the distortion due to thermal stress is large, which causes cracks in the solder joints and significantly deteriorates reliability.
The present invention interposes an iron plate with a linear expansion coefficient of 11.7 x 10-6/C between the aluminum heat sink and the metallized substrate, thereby improving the relationship between the aluminum heat sink and the iron plate and between the iron plate and the metallized substrate. The difference in linear expansion coefficient can reduce the amount of strain caused by thermal stress, and the cracks in the solder joints that occur due to the brittleness of the solder material can be fixed by joining a steel plate to an aluminum heat sink using ultrasonic pressure welding. So I can solve it.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、アルミ放熱板にあら
かじめ超音波圧接法にて鉄板を接合させ、これに接合す
るメタライズされたアルミナ基板を上記鉄板を介して接
合するので、アルミ放熱板とメタライズ基板との線膨張
係数の段差は緩和され接合の信頼性が向上する。As described above, according to the present invention, a steel plate is bonded to an aluminum heat sink in advance by ultrasonic pressure welding, and a metalized alumina substrate to be bonded to this is bonded via the iron plate. The difference in linear expansion coefficient with the metallized substrate is alleviated, and the reliability of the bonding is improved.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の一実施例におけるパワートランジス
タ部を示す断面図、第２図は一般的な混成集積回路製時
の一例を示す平面図、第３図は従来技術によるパワート
ランジスタ部の断面図である。 図において、（１）はアルミニウム放熱板、（２）はメ
タライズ（アルミナ）基板、（４）はパワートランジス
タナツプ、（９）は半田接合層、Ｑｌは鉄板でろる。 なお、図中同一符号は同一または和尚部分をしめず。FIG. 1 is a cross-sectional view showing a power transistor section according to an embodiment of the present invention, FIG. 2 is a plan view showing an example of manufacturing a general hybrid integrated circuit, and FIG. 3 is a cross-sectional view of a power transistor section according to the prior art. It is a diagram. In the figure, (1) is an aluminum heat sink, (2) is a metallized (alumina) substrate, (4) is a power transistor nap, (9) is a solder bonding layer, and Ql is an iron plate. Note that the same symbols in the figures do not indicate the same parts or priests.

Claims (1)

【特許請求の範囲】[Claims] （１）アルミニウム放熱板上にメタライズされた絶縁基
板を半田接合させ、さらにその上にパワートランジスタ
チツプを含む部品を搭載してなる混成集積回路装置にお
いて、 上記アルミニウム放熱板にあらかじめ鉄板を超音波圧接
法で接合し、この鉄板を介して上記メタライズされた絶
縁基板を半田接合させたことを特徴とする混成集積回路
装置。(1) In a hybrid integrated circuit device in which a metallized insulating substrate is soldered onto an aluminum heat sink, and components including a power transistor chip are further mounted on top of the solder, a steel plate is ultrasonically welded to the aluminum heat sink in advance. 1. A hybrid integrated circuit device characterized in that the metallized insulating substrate is soldered to the metallized insulating substrate via the iron plate.
JP62300979A 1987-11-28 1987-11-28 Hybrid integrated circuit device Pending JPH01143227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62300979A JPH01143227A (en) 1987-11-28 1987-11-28 Hybrid integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62300979A JPH01143227A (en) 1987-11-28 1987-11-28 Hybrid integrated circuit device

Publications (1)

Publication Number Publication Date
JPH01143227A true JPH01143227A (en) 1989-06-05

Family

ID=17891375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62300979A Pending JPH01143227A (en) 1987-11-28 1987-11-28 Hybrid integrated circuit device

Country Status (1)

Country Link
JP (1) JPH01143227A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8309969B2 (en) 2008-11-20 2012-11-13 Toyoda Gosei Co., Ltd. Light emitting device and method of making same
US8894245B2 (en) 2009-02-24 2014-11-25 Toyoda Gosei Co., Ltd. Light-emitting device and method of manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8309969B2 (en) 2008-11-20 2012-11-13 Toyoda Gosei Co., Ltd. Light emitting device and method of making same
US8894245B2 (en) 2009-02-24 2014-11-25 Toyoda Gosei Co., Ltd. Light-emitting device and method of manufacturing the same

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