JPH0114727B2 - - Google Patents

Info

Publication number
JPH0114727B2
JPH0114727B2 JP10540880A JP10540880A JPH0114727B2 JP H0114727 B2 JPH0114727 B2 JP H0114727B2 JP 10540880 A JP10540880 A JP 10540880A JP 10540880 A JP10540880 A JP 10540880A JP H0114727 B2 JPH0114727 B2 JP H0114727B2
Authority
JP
Japan
Prior art keywords
coaxial resonator
tuning
high frequency
signal
flows
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP10540880A
Other languages
Japanese (ja)
Other versions
JPS5730409A (en
Inventor
Shinpachi Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd
Original Assignee
Mitsumi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Priority to JP10540880A priority Critical patent/JPS5730409A/en
Publication of JPS5730409A publication Critical patent/JPS5730409A/en
Publication of JPH0114727B2 publication Critical patent/JPH0114727B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G1/00Details of arrangements for controlling amplification
    • H03G1/0005Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]

Landscapes

  • Control Of Amplification And Gain Control (AREA)
  • Amplifiers (AREA)
  • Channel Selection Circuits, Automatic Tuning Circuits (AREA)
  • Circuits Of Receivers In General (AREA)

Description

【発明の詳細な説明】 本発明は電子同調チユーナに係り、同軸共振器
と可変容量ダイオードとの接続配置を所定の配列
とすることにより、高周波増幅段の自動利得制御
回路特性(AGC特性)を改善し得る電子同調チ
ユーナを提供することを目的とする。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electronically tuned tuner, in which automatic gain control circuit characteristics (AGC characteristics) of a high frequency amplification stage are improved by connecting a coaxial resonator and a variable capacitance diode in a predetermined arrangement. It is an object of the present invention to provide an electronic tuning tuner that can be improved.

第1図は従来の電子同調チユーナの一例の具体
的回路図を示す。同図中、1は電子同調チユーナ
のケースでアース電位とされており、また2は受
信信号入力端子、3は同調電圧Vt入力端子、4
はAGC電圧入力端子、5は電源電圧+B入力端
子である。入力端子2に入来した例えばUHF帯
の高周波テレビジヨン信号は、同軸共振器6に供
給され、これより同軸共振器7に誘起され、同軸
共振器7のインダクタンス値、及び可変容量ダイ
オード8の容量値等により定まる同調周波数に等
しい高周波テレビジヨン信号のみが高周波増幅用
のNチヤンネル4極MOS型電界効果トランジス
タ(FET)Q1の第1ゲートに印加される。
FIG. 1 shows a specific circuit diagram of an example of a conventional electronic tuning tuner. In the figure, 1 is the case of the electronic tuning tuner, which is at ground potential, 2 is the received signal input terminal, 3 is the tuning voltage V t input terminal, and 4 is the tuning voltage V t input terminal.
is the AGC voltage input terminal, and 5 is the power supply voltage +B input terminal. A high frequency television signal in the UHF band, for example, which enters the input terminal 2 is supplied to the coaxial resonator 6 and is induced in the coaxial resonator 7 from this, and the inductance value of the coaxial resonator 7 and the capacitance of the variable capacitance diode 8 are Only a high frequency television signal equal to a tuning frequency determined by a value etc. is applied to the first gate of an N-channel quadrupole MOS field effect transistor (FET) Q1 for high frequency amplification.

第1ゲートに印加された高周波テレビジヨン信
号は、FET Q1のドレインに接続された同軸共振
器11、可変容量ダイオード12、同軸共振器1
3〜16、可変容量ダイオード17等よりなる同
調回路により選択同調された後、同軸共振器18
に誘起されて混合用NPNトランジスタQ2のエミ
ツタに供給される。ここで、同軸共振器9,1
0,15は特性インピーダンス調整用インダクタ
ンス素子として使用される。
The high frequency television signal applied to the first gate is transmitted through the coaxial resonator 11 connected to the drain of FET Q 1 , the variable capacitance diode 12, and the coaxial resonator 1.
After being selectively tuned by a tuning circuit consisting of 3 to 16 and a variable capacitance diode 17, the coaxial resonator 18
is induced by the current and is supplied to the emitter of the mixing NPN transistor Q2 . Here, the coaxial resonators 9, 1
0 and 15 are used as inductance elements for adjusting characteristic impedance.

一方、NPNトランジスタQ3と、Q3のベース及
び接地間に直列に接続されている同軸共振器20
及び可変容量ダイオード21等は局部発振器を構
成しており、Q3のベース側より取り出された局
部発振周波数はトランジスタQ2のエミツタに供
給され、ここで上記選択同調された高周波テレビ
ジヨン信号との周波数変換が行なわれてトランジ
スタQ2のコレクタより一定の中間周波信号(IF
信号)とされて取り出される。この中間周波信号
はコイル23、抵抗24よりなる並列回路及びコ
ンデンサ25を夫々直列に経て不要成分が除去さ
れて出力端子26より出力される。
On the other hand, an NPN transistor Q 3 and a coaxial resonator 20 connected in series between the base of Q 3 and the ground
The variable capacitance diode 21 and the like constitute a local oscillator, and the local oscillation frequency taken out from the base side of Q3 is supplied to the emitter of transistor Q2 , where it is mixed with the selectively tuned high-frequency television signal. After frequency conversion, a constant intermediate frequency signal (IF
signals). This intermediate frequency signal passes through a parallel circuit consisting of a coil 23, a resistor 24, and a capacitor 25 in series, removes unnecessary components, and is outputted from an output terminal 26.

しかして、入力端子3に入来する同調電圧Vt
は受信チヤンネル毎に異なり、所望チヤンネルの
同調電圧Vtを可変容量ダイオード8,12,1
7,21に夫々逆バイアス電圧として印加し、そ
れらの容量を可変せしめることによつて同調周波
数を所望チヤンネルのものに可変して選択同調を
行なうことは周知の通りである。また入力端子4
よりAGC電圧がFET Q1の利得制御用ゲートに
印加される。
Therefore, the tuning voltage V t entering the input terminal 3
differs for each reception channel, and the tuning voltage V t of the desired channel is set by the variable capacitance diodes 8, 12, 1.
It is well known that selective tuning is performed by applying reverse bias voltages to channels 7 and 21 and varying their capacitances to vary the tuning frequency to that of a desired channel. Also, input terminal 4
The AGC voltage is applied to the gain control gate of FET Q1 .

上記の従来の電子同調チユーナにおいて、入力
端子2に入来した受信高周波テレビジヨン信号
が、ある瞬間において同軸共振器6に矢印方向に
流れたものとすると、この時同軸共振器7に誘起
された信号は矢印S0方向に流れ、FET Q1のドレ
インには矢印S1方向に入力高周波テレビジヨン信
号の増幅信号電流が流れる。またFET Q1のゲー
ト・ドレイン間には逆伝達容量(帰還容量)Crss
が存在するため、第1ゲートに入来した高周波テ
レビジヨン信号は、そのままドレインにS1とは逆
方向の矢印S2方向に流れる。
In the above-mentioned conventional electronically tuned tuner, if the received high-frequency television signal entering the input terminal 2 flows into the coaxial resonator 6 in the direction of the arrow at a certain moment, then the signal induced in the coaxial resonator 7 at this time is The signal flows in the direction of arrow S0 , and the amplified signal current of the input high frequency television signal flows in the direction of arrow S1 through the drain of FET Q1 . In addition, there is a reverse transfer capacitance (feedback capacitance) Crss between the gate and drain of FET Q 1 .
Therefore, the high frequency television signal that enters the first gate flows directly to the drain in the direction of arrow S2 , which is the opposite direction to S1 .

またこれと同時に、同軸共振器7に誘起した高
周波テレビジヨン信号は、同軸共振器11に直接
に誘導されてS0とは逆方向の矢印S3方向の信号電
流として流れる。同軸共振器7と11との間には
シールド板があるが、シールドは完全ではなくケ
ースとの間に隙間があるため、その隙間を通し
て、更には基板の裏側を通して同軸共振器7から
同軸共振器11へ高周波テレビジヨン信号が誘起
される。このように、同軸共振器7に矢印S0方向
に信号電流が流れるとFET Q1のドレイン側には
S1,S2,S3なる方向に信号電流が流れることにな
る。しかし、これらの信号電流のうち、S2,S3
方向に流れる信号は不要信号となる。
At the same time, the high frequency television signal induced in the coaxial resonator 7 is directly induced in the coaxial resonator 11 and flows as a signal current in the direction of arrow S3 , which is the opposite direction to S0 . There is a shield plate between coaxial resonators 7 and 11, but the shield is not complete and there is a gap between it and the case. A high frequency television signal is induced into 11. In this way, when a signal current flows in the coaxial resonator 7 in the direction of arrow S 0 , the drain side of FET Q 1
Signal currents flow in the directions S 1 , S 2 , and S 3 . However, among these signal currents, the signals flowing in the directions of S 2 and S 3 become unnecessary signals.

すなわち、上記従来の電子同調チユーナの
AGC電圧対利得減衰量特性(AGC特性)は第2
図に示す如くになり、カツトオフ点の1V付近に
なると信号電流S1は極めて小さくなり信号電流S2
とS3の和に略等しい値程度までになるため、
FET Q1の利得が急に低下して同図に示す如く最
大の利得減衰量を示す。そしてAGC電圧が1V以
下になると信号電流S1は0となる。反面、同軸共
振器11には信号電流S2,S3の和の信号電流が流
れることになり、逆に利得が少し上昇する。この
ため、上記のカツトオフ点付近で第2図に示す如
く利得減衰量は下向きのピークを生じてしまう。
この下向きのピーク(いわゆるAGC特性のはね
かえり)は1.5V付近で10dB〜20dB程度もあるた
め、AGC動作に誤動作をもたらすことがあつた。
また、受信UHFテレビジヨン放送帯域が第14チ
ヤンネルから第83チヤンネルとすると、両者の
AGC特性の差が第2図に示す如く大きいため、
利得減衰時のイメージ妨害比が最大利得時に比較
して10dB程度低くなるという欠点があつた。
In other words, the above conventional electronic tuning tuner
The AGC voltage vs. gain attenuation characteristic (AGC characteristic) is the second
As shown in the figure, when the cut-off point approaches 1V, the signal current S 1 becomes extremely small, and the signal current S 2
and S 3 to a value approximately equal to the sum of
The gain of FET Q 1 suddenly decreases and reaches the maximum gain attenuation as shown in the figure. Then, when the AGC voltage becomes 1V or less, the signal current S1 becomes 0. On the other hand, a signal current equal to the sum of signal currents S 2 and S 3 flows through the coaxial resonator 11, and conversely, the gain increases slightly. For this reason, the amount of gain attenuation peaks downward near the above-mentioned cutoff point as shown in FIG.
This downward peak (so-called bounce of the AGC characteristic) is around 10 dB to 20 dB around 1.5 V, which sometimes caused malfunctions in AGC operation.
Also, if the received UHF television broadcast band changes from channel 14 to channel 83, both
Since the difference in AGC characteristics is large as shown in Figure 2,
The disadvantage was that the image disturbance ratio when the gain was attenuated was about 10 dB lower than when the gain was at maximum.

本発明は上記の諸欠点を除去したものであり、
以下第3図乃至第7図と共にその各実施例につい
て説明する。
The present invention eliminates the above-mentioned drawbacks,
Each embodiment will be described below with reference to FIGS. 3 to 7.

第3図は本発明になる電子同調チユーナの第1
実施例の具体的回路図を示す。同図中、第1図と
同一部分には同一符号を付し、その説明を省略す
る。本発明は上記の不要信号電流S2,S3が夫々同
方向に流れることによつて上記各欠点が生ずるこ
とに着目し、不要信号電流S2,S3が互いに逆方向
に流れるように、高周波増幅用FET Q1の入力側
と出力側の各同調回路の同軸共振器7,11,1
6と可変容量ダイオード8,12,17との接続
配列を変えるようにした点に特徴を有する。
FIG. 3 shows the first electronic tuning tuner according to the present invention.
A specific circuit diagram of an example is shown. In the figure, the same parts as in FIG. 1 are designated by the same reference numerals, and their explanations will be omitted. The present invention focuses on the fact that the above disadvantages occur when the unnecessary signal currents S 2 and S 3 flow in the same direction, and so that the unnecessary signal currents S 2 and S 3 flow in opposite directions. Coaxial resonators 7, 11, 1 of each tuned circuit on the input side and output side of FET Q 1 for high frequency amplification
6 and variable capacitance diodes 8, 12, and 17 are changed in connection arrangement.

第1実施例では第3図に示す如く、FET Q1
出力側の複同調回路の接続配列を変えたもので、
FET Q1のドレインはコイル27、コンデンサ2
8を夫々直列に介して同軸共振器11及びコンデ
ンサ29の接続点に接続されており、また同軸共
振器11のコンデンサ29との接続端子とは反対
側端子は可変容量ダイオード12′のカソードに
接続されている。この可変容量ダイオード12′
のアノードは可変容量ダイオード17′のアノー
ドに接続され更にこれらのアノードは接地され
る。17′のカソードは同軸共振器16の一端に
接続されている。
In the first embodiment, as shown in Fig. 3, the connection arrangement of the double-tuned circuit on the output side of FET Q 1 is changed,
The drain of FET Q 1 is coil 27, capacitor 2
8 are connected in series to the connection point of the coaxial resonator 11 and the capacitor 29, and the terminal of the coaxial resonator 11 opposite to the connection terminal with the capacitor 29 is connected to the cathode of the variable capacitance diode 12'. has been done. This variable capacitance diode 12'
The anode of the variable capacitance diode 17' is connected to the anode of the variable capacitance diode 17', and these anodes are grounded. The cathode 17' is connected to one end of the coaxial resonator 16.

しかして、いま入力端子2に入来したUHF帯
の高周波テレビジヨン信号によつて同軸共振器7
に第3図にS0で示す矢印方向の信号電流が流れた
時、FET Q1のドレインには増幅された信号電流
S1及びFET Q1の逆伝達容量Crssによる信号電流
S2が流れると同時に、同軸共振器11に同軸共振
器7とは逆方向の誘導電流S3が流れる。かかる信
号電流S1〜S3は従来の電子同調チユーナの第1図
に示すS1〜S3の信号電流と同じ方向に流れるが、
上記の接続によつて信号電流S2はS3とは逆方向に
同軸共振器11に流れることになる。従つて、本
実施例によるAGC特性は第4図に示す如くカツ
トオフ点の1V付近に近くなると信号電流S1は極
めて小さくなり最大の利得減衰量を示し、また
AGC電圧が1V以下になると信号電流S1は0とな
り、同軸共振器11には信号電流S2とS3との差の
極めて小なる0とみなし得る信号電流しか流れな
いため、上記最大の利得減衰量を示す。従つて、
AGC特性のはねかえりをなくすことができる。
Therefore, the coaxial resonator 7 is affected by the UHF band high frequency television signal that has just entered the input terminal 2.
When a signal current flows in the direction of the arrow shown by S 0 in Figure 3, the amplified signal current flows to the drain of FET Q 1 .
Signal current due to reverse transfer capacitance Crss of S 1 and FET Q 1
At the same time that S 2 flows, an induced current S 3 flows in the coaxial resonator 11 in the opposite direction to that of the coaxial resonator 7 . These signal currents S 1 to S 3 flow in the same direction as the signal currents S 1 to S 3 shown in FIG. 1 of the conventional electronic tuning tuner, but
Due to the above connection, the signal current S 2 flows into the coaxial resonator 11 in the opposite direction to that of S 3 . Therefore, as shown in FIG. 4, the AGC characteristics of this embodiment are such that when it approaches the cut-off point of 1V, the signal current S1 becomes extremely small and exhibits the maximum gain attenuation.
When the AGC voltage becomes 1V or less, the signal current S 1 becomes 0, and only the signal current that can be considered 0, which is an extremely small difference between the signal currents S 2 and S 3 , flows through the coaxial resonator 11. Indicates the amount of attenuation. Therefore,
It is possible to eliminate the bounce of AGC characteristics.

第5図は本発明になる電子同調チユーナの第2
実施例の要部の具体的回路図を示す。同図中、第
1図と同一部分には同一符号を付し、その説明を
省略する。同軸共振器7は一端が可変容量ダイオ
ード8′のカソードに接続され、その他端がコン
デンサ30を介してFET Q1の第1ゲートに接続
されている。すなわち、本実施例ではFET Q1
入力同調回路の同軸共振器7と可変容量ダイオー
ド8′の接続配置を変えたものであり、同軸共振
器7にS0なる方向の信号電流が流れた時は、
FET Q1の第1ゲートには第1図及び第3図の場
合とは逆方向に信号電流が供給されることにな
り、従つて高周波増幅されたFET Q1のドレイン
の出力信号電流は第5図にS1′で示す如き方向に
流れ、かつ、FET Q1のCrssによる信号電流は同
図にS2′で示す如き方向に流れる。また、同軸共
振器11に誘導された電流はS3で示す方向に流れ
る。
FIG. 5 shows the second electronic tuning tuner according to the present invention.
A specific circuit diagram of the main part of the embodiment is shown. In the figure, the same parts as in FIG. 1 are designated by the same reference numerals, and their explanations will be omitted. One end of the coaxial resonator 7 is connected to the cathode of the variable capacitance diode 8', and the other end is connected to the first gate of the FET Q1 via the capacitor 30. That is, in this embodiment, the connection arrangement of the coaxial resonator 7 and the variable capacitance diode 8' of the input tuning circuit of FET Q 1 is changed, and when a signal current in the direction of S 0 flows through the coaxial resonator 7, teeth,
The signal current is supplied to the first gate of FET Q 1 in the opposite direction to that shown in Figs. The signal current flows in the direction shown by S 1 ' in FIG. 5, and the signal current due to Crss of FET Q 1 flows in the direction shown by S 2 ' in the same figure. Further, the current induced in the coaxial resonator 11 flows in the direction indicated by S3 .

従つて、本実施例の場合も、不要信号電流は矢
印S2′,S3で示す如く互いに逆方向に流れるから、
第4図に示す如きAGC特性を有する。
Therefore, in the case of this embodiment as well, the unnecessary signal currents flow in opposite directions as shown by the arrows S 2 ' and S 3 .
It has AGC characteristics as shown in FIG.

以上はFET Q1の入力側及び出力側の各同調回
路のうちいずれか一方の接続配置を変えたもので
あるが、第6図、第7図に具体的回路を示す第3
実施例、第4実施例では両方の接続配置を変えて
いる。すなわち、第6図に示す本発明の第3実施
例では、同軸共振器7の非接地側端子が可変容量
ダイオード8″のアノードに接続される一方、コ
ンデンサ30を介してFET Q1の第1ゲートに接
続されている。また同軸共振器11,16の一端
は可変容量ダイオード12″,17″のアノード及
びカソード、コンデンサ32,33を直列に介し
て接地されている。また可変容量ダイオード1
2″のカソードはコンデンサ28を介してFET
Q1のドレインに接続されている。
The above is a case where the connection arrangement of one of the tuned circuits on the input side and output side of FET Q 1 is changed.
In the embodiment and the fourth embodiment, both connection arrangements are changed. That is, in the third embodiment of the present invention shown in FIG. 6, the non-ground terminal of the coaxial resonator 7 is connected to the anode of the variable capacitance diode 8 '', while Also, one end of the coaxial resonators 11 and 16 is grounded via the anodes and cathodes of variable capacitance diodes 12'' and 17'' and capacitors 32 and 33 in series.
2″ cathode is FET via capacitor 28
Connected to the drain of Q 1 .

このような接続とすることによつて本実施例の
場合は、入力端子2に入来した高周波テレビジヨ
ン信号によつて同軸共振器7に矢印S0方向に信号
電流が流れた時には、前記したFET Q1のCrssに
よる不要な信号電流は矢印S2′方向に、また同軸
共振器7から直接同軸共振器11に誘導されて流
れる不要信号電流は矢印S3方向に夫々互いに逆方
向に流れる。従つて、本実施例の場合も第1、第
2実施例と同様に第4図に示す如きAGC特性を
有する。
By making such a connection, in the case of this embodiment, when a signal current flows in the coaxial resonator 7 in the direction of arrow S0 due to the high frequency television signal that enters the input terminal 2, the above-mentioned Unnecessary signal current due to Crss of FET Q 1 flows in the direction of arrow S 2 ′, and unnecessary signal current that is induced directly from the coaxial resonator 7 to coaxial resonator 11 flows in the direction of arrow S 3 in opposite directions. Therefore, this embodiment also has AGC characteristics as shown in FIG. 4, like the first and second embodiments.

また第7図に示す本発明の第4実施例では、
FET Q1の第1ゲートはコンデンサ35を介して
同軸共振器7の非接地側端子及び可変容量ダイオ
ード8のアノードに接続され、FET Q1のドレ
インはコンデンサ28を介して同軸共振器11の
一端及び可変容量ダイオード12のアノードに
夫々接続されている。また可変容量ダイオード8
のカソードはコンデンサ34を介して接地さ
れ、同軸共振器16の非接地側端子は可変容量ダ
イオード17のアノードに接続されている。
Furthermore, in the fourth embodiment of the present invention shown in FIG.
The first gate of FET Q 1 is connected to the non-grounded terminal of coaxial resonator 7 and the anode of variable capacitance diode 8 via capacitor 35, and the drain of FET Q 1 is connected to one end of coaxial resonator 11 via capacitor 28. and the anode of the variable capacitance diode 12, respectively. Also, variable capacitance diode 8
The cathode of the coaxial resonator 16 is connected to the ground via the capacitor 34, and the non-grounded terminal of the coaxial resonator 16 is connected to the anode of the variable capacitance diode 17.

かかる接続とされた第4実施例では、同軸共振
器7にS0なる矢印方向に高周波テレビジヨン信号
が流れた時には、FET Q1のCrssによる不要信号
電流は矢印S2方向に流れ、同軸共振器7から直接
同軸共振器11に誘導されて流れる不要信号電流
は矢印S3方向に流れる。これにより矢印S2方向の
不要信号電流は同軸共振器11では矢印S3方向の
不要信号電流とは逆方向に流れることになる。従
つて、本実施例のAGC特性も、第1乃至第3実
施例と同様に第4図に示す如くになる。
In the fourth embodiment with such a connection, when a high frequency television signal flows through the coaxial resonator 7 in the direction of the arrow S0 , the unnecessary signal current due to Crss of FET Q1 flows in the direction of the arrow S2 , causing coaxial resonance. The unnecessary signal current that is induced directly from the resonator 7 into the coaxial resonator 11 flows in the direction of arrow S3 . As a result, the unnecessary signal current in the direction of arrow S2 flows in the coaxial resonator 11 in the opposite direction to the unnecessary signal current in the direction of arrow S3 . Therefore, the AGC characteristics of this embodiment are as shown in FIG. 4, similar to the first to third embodiments.

なお、以上の第1乃至第4実施例のAGC特性
は第4図に示す如くになり、実験の結果、カツト
オフ点での減衰度が全帯域(第14チヤンネルから
第83チヤンネル)に亘つて略一様に大きくとれる
ことが確められた。
The AGC characteristics of the first to fourth embodiments described above are as shown in Fig. 4, and as a result of experiments, the degree of attenuation at the cut-off point is approximately the same over the entire band (from the 14th channel to the 83rd channel). It was confirmed that the size can be uniformly increased.

上述の如く、本発明になる電子同調チユーナ
は、入力同調回路内の第1の同軸共振器の一端に
同調電圧入力端子が接続され、かつ、上記第1の
同軸共振器に流れる入力高周波信号電流によつて
電流が誘導により流れる出力同調回路内の第2の
同軸共振器の一端に前記同調電圧入力端子が接続
された構成とすると共に、前記高周波増幅用トラ
ンジスタの入力電極を前記第1の同軸共振器の一
端又は他端に接続したため、上記高周波増幅用ト
ランジスタの入力電極と出力電極との間の容量に
よつて生じた高周波増幅用トランジスタの出力信
号電流成分と、上記第2の同軸共振器に流れる電
流とが出力同調回路内において互いに逆方向に流
れるようにすることができ、よつてAGC電圧対
利得減衰量特性におけるカツトオフ点付近での下
向きのピークをなくすことができ、また利得減衰
時のイメージ妨害比は従来の10dB程度の低下に
対し2dB程度しか低下せず、大幅に改善でき、更
にカツトオフ点以下のAGC電圧に対し減衰度を
全帯域に亘つて大きくとることができ、また減衰
度の差は全帯域に亘つて少なくでき、特に逆伝達
容量(帰還容量)の大なるMOS型電界効果トラ
ンジスタを高周波増幅用トランジスタに使用した
電子同調チユーナに適用して好適である等の数々
の特長を有するものである。
As described above, the electronic tuning tuner according to the present invention has a tuning voltage input terminal connected to one end of the first coaxial resonator in the input tuning circuit, and an input high-frequency signal current flowing through the first coaxial resonator. The tuning voltage input terminal is connected to one end of the second coaxial resonator in the output tuning circuit through which current flows by induction, and the input electrode of the high frequency amplification transistor is connected to the first coaxial resonator. Since it is connected to one end or the other end of the resonator, the output signal current component of the high frequency amplification transistor caused by the capacitance between the input electrode and the output electrode of the high frequency amplification transistor and the second coaxial resonator This allows the current flowing in the output tuning circuit to flow in opposite directions to each other in the output tuning circuit, thereby eliminating the downward peak near the cutoff point in the AGC voltage vs. gain attenuation characteristic. The image disturbance ratio of the conventional method is reduced by only about 2 dB compared to about 10 dB, which is a significant improvement.Furthermore, the degree of attenuation for AGC voltages below the cut-off point can be increased over the entire band, and the attenuation ratio can be significantly improved. The difference in power can be reduced over the entire band, making it particularly suitable for use in electronic tuning tuners that use MOS field effect transistors with large reverse transfer capacitance (feedback capacitance) as high-frequency amplification transistors. It has certain characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の電子同調チユーナの一例を示す
具体的回路図、第2図は第1図のAGC特性の一
例を示す図、第3図は本発明になる電子同調チユ
ーナの第1実施例を示す具体的回路図、第4図は
本発明になる電子同調チユーナのAGC特性の一
例を示す図、第5図、第6図及び第7図は夫々本
発明になる電子同調チユーナの第2、第3及び第
4実施例の要部を示す具体的回路図である。 1……ケース、2……高周波テレビジヨン信号
入力端子、3……同調電圧入力端子、4……
AGC電圧入力端子、5……電源電圧入力端子、
6,7,9〜11,13〜16,18〜20……
同軸共振器、8,8′,8″,8,12,12′,
12″,12,17,17′,17″,17…
…可変容量ダイオード、26……中間周波信号出
力端子、Q1……高周波増幅用Nチヤンネル4極
MOS型電界効果トランジスタ、Q2……混合用
NPNトランジスタ、Q3……局部発振用NPNト
ランジスタ。
FIG. 1 is a specific circuit diagram showing an example of a conventional electronically tuned tuner, FIG. 2 is a diagram showing an example of the AGC characteristics of FIG. 1, and FIG. 3 is a first embodiment of the electronically tuned tuner according to the present invention. FIG. 4 is a diagram showing an example of the AGC characteristics of the electronically tuned tuner according to the present invention, and FIGS. FIG. 3 is a specific circuit diagram showing main parts of the third and fourth embodiments. 1... Case, 2... High frequency television signal input terminal, 3... Tuning voltage input terminal, 4...
AGC voltage input terminal, 5...Power supply voltage input terminal,
6, 7, 9-11, 13-16, 18-20...
Coaxial resonator, 8, 8', 8'', 8, 12, 12',
12'', 12, 17, 17', 17'', 17...
...Variable capacitance diode, 26...Intermediate frequency signal output terminal, Q 1 ...N channel 4-pole for high frequency amplification
MOS type field effect transistor, Q 2 ...for mixed use
NPN transistor, Q 3 ... NPN transistor for local oscillation.

Claims (1)

【特許請求の範囲】[Claims] 1 高周波増幅用トランジスタの入力同調回路と
出力同調回路の各々に、インダクタンス素子とし
て同軸共振器をその長手方向が互いに平行となる
ように配置した電子同調チユーナにおいて、上記
入力同調回路内の第1の同軸共振器の一端に同調
電圧入力端子が接続され、かつ、上記第1の同軸
共振器に流れる入力高周波信号電流によつて電流
が誘導により流れる上記出力同調回路内の第2の
同調共振器の一端に前記同調電圧入力端子が接続
された構成とすると共に、前記高周波増幅用トラ
ンジスタの入力電極を前記第1の同軸共振器の一
端又は他端に接続し、かつ、該高周波増幅用トラ
ンジスタの出力電極を前記第2の同軸共振器の他
端又は一端に接続したことを特徴とする電子同調
チユーナ。
1. In an electronic tuning tuner in which a coaxial resonator is arranged as an inductance element in each of an input tuning circuit and an output tuning circuit of a high-frequency amplification transistor so that their longitudinal directions are parallel to each other, the first tuning circuit in the input tuning circuit A second tuned resonator in the output tuned circuit has a tuned voltage input terminal connected to one end of the coaxial resonator, and a current flows by induction due to the input high frequency signal current flowing to the first coaxial resonator. The tuning voltage input terminal is connected to one end, and the input electrode of the high frequency amplification transistor is connected to one end or the other end of the first coaxial resonator, and the output of the high frequency amplification transistor is An electronic tuning tuner characterized in that an electrode is connected to the other end or one end of the second coaxial resonator.
JP10540880A 1980-07-31 1980-07-31 Electronic tuner Granted JPS5730409A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10540880A JPS5730409A (en) 1980-07-31 1980-07-31 Electronic tuner

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10540880A JPS5730409A (en) 1980-07-31 1980-07-31 Electronic tuner

Publications (2)

Publication Number Publication Date
JPS5730409A JPS5730409A (en) 1982-02-18
JPH0114727B2 true JPH0114727B2 (en) 1989-03-14

Family

ID=14406779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10540880A Granted JPS5730409A (en) 1980-07-31 1980-07-31 Electronic tuner

Country Status (1)

Country Link
JP (1) JPS5730409A (en)

Also Published As

Publication number Publication date
JPS5730409A (en) 1982-02-18

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