JPH01155668A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01155668A JPH01155668A JP62314646A JP31464687A JPH01155668A JP H01155668 A JPH01155668 A JP H01155668A JP 62314646 A JP62314646 A JP 62314646A JP 31464687 A JP31464687 A JP 31464687A JP H01155668 A JPH01155668 A JP H01155668A
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- JP
- Japan
- Prior art keywords
- semiconductor device
- superconducting material
- light
- superconducting
- sensor
- Prior art date
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- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Light Receiving Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［技術分野］
本発明は光を検知し得る半導体装置に関し、より詳しく
は、殊に完全密着型等倍センサーとして好適に使用でき
る半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor device capable of detecting light, and more particularly to a semiconductor device that can be suitably used as a fully contact type 1-magnification sensor.
［従来技術］
従来のこの種の装置の一例を第４図を参照して説明する
。[Prior Art] An example of a conventional device of this type will be described with reference to FIG.
第４図に示す代表的な完全密着型等倍センサーは、石英
板１２の上に薄層状の遮光部（Ｃｒ）１３、光透過部１
４、層間絶縁膜（Ｓ ｉ ０．２ ）１５を形成し、光
透過部１４から透過し原稿面１８から反射してきた光を
受光し得る位置にセンサー１６を設けてなるものである
。そして、センサー１６と層間絶縁膜１５を覆うように
絶縁膜（ＳｉＯ２）１７を形成しである。A typical full-contact type 1-magnification sensor shown in FIG.
4. An interlayer insulating film (S i 0.2 ) 15 is formed, and a sensor 16 is provided at a position where it can receive the light transmitted from the light transmitting portion 14 and reflected from the document surface 18. Then, an insulating film (SiO2) 17 is formed to cover the sensor 16 and the interlayer insulating film 15.
この完全密着型等倍センサーにおいては、光の遮光が、
線状に並んだ多数ビットの量子化に重要なポイントを持
つ。In this fully contact type 1-magnification sensor, light blocking is
It has an important point in quantizing a large number of bits arranged in a line.
このような従来の装置においては、センサー１６の電気
信号を取り出すための回路配線材料（図示省略）として
、金属薄膜、ＩＴｏｅ膜等が用いられていたが、これら
の配線材料ではその有限な抵抗値と奇生容量によって、
回路の時定数はある限度を越えて小さくすることはでき
ず、処理速度に限界があり、光応答性が低い問題があっ
た。In such conventional devices, metal thin films, IToe films, etc. have been used as circuit wiring materials (not shown) for extracting electrical signals from the sensor 16, but these wiring materials have a finite resistance value. and by parasitic capacitance,
The time constant of the circuit cannot be reduced beyond a certain limit, which limits the processing speed, and there are problems with low photoresponsiveness.
また、回路配線を設ける工程が必要なため工程数がその
分多くなるという問題もあった。Further, since a step of providing circuit wiring is required, there is also a problem that the number of steps increases accordingly.
［目的］
本発明の目的は、光応答性に優れ、製造工程の工程数が
低減できる半導体装置を提供することにある。[Objective] An object of the present invention is to provide a semiconductor device that has excellent photoresponsiveness and can reduce the number of manufacturing steps.
［構成］
上記の目的を達成するために本発明は、光を検知する半
導体装置であって、光透過部と遮光部とを有し、超伝導
となる臨界温度が高い超伝導材料で遮光部を、低い超伝
導材料で光透過部を形成してなることを特徴とする半導
体装置を提供するものである。[Structure] In order to achieve the above object, the present invention provides a semiconductor device for detecting light, which has a light transmitting part and a light shielding part, and the light shielding part is made of a superconducting material having a high critical temperature for becoming superconducting. The present invention provides a semiconductor device characterized in that a light transmitting portion is formed of a low superconducting material.
本発明は臨界温度の異なる超伝導材料を使用して、それ
により発生する自由電子の増減により、遮光部、光透過
部を形成することを特徴としている。The present invention is characterized in that superconducting materials having different critical temperatures are used to form a light-shielding portion and a light-transmitting portion by increasing and decreasing free electrons generated thereby.
第３図により本発明における超伝導材料の遮光効果が現
れる理由を説明する。第３図かられかるように、超伝導
材料は一種の半導体で必り、自由キャリアの数に依存し
て光吸収率の波長依存性か変化する。これは、光子（）
ｔトン）が、自由キャリアの振動エネルキーに変換させ
られるため、自由キャリアの数の増加にともなって光吸
収率が増加するためである。The reason why the light shielding effect of the superconducting material in the present invention appears will be explained with reference to FIG. As can be seen from Figure 3, superconducting materials are a type of semiconductor, and the wavelength dependence of light absorption rate changes depending on the number of free carriers. This is a photon ()
This is because the light absorption rate increases as the number of free carriers increases, since the energy of free carriers is converted into the vibrational energy of free carriers.
ちなみに、超伝導状態でない超伝導材料は、自由キャリ
アもその結晶の境界面にトラップされ易く、自由キャリ
ア数も少ない。しかし、超伝導状態になった超伝導材料
では、自由キャリアはその境界面にトラップされにくく
、数として増加する。Incidentally, in a superconducting material that is not in a superconducting state, free carriers are also likely to be trapped at the boundary surfaces of its crystals, and the number of free carriers is small. However, in a superconducting material that is in a superconducting state, free carriers are less likely to be trapped at the interface, and their number increases.
これを応用して、超伝導物質の組成比を部分的に制御し
て、臨界温度差を局部的に発生させ、それに伴なう透過
率の変化を同一平面上もしくは積層上に形成する。By applying this, the composition ratio of the superconducting material can be partially controlled to locally generate a critical temperature difference, and the corresponding change in transmittance can be created on the same plane or in a stacked layer.
超伝導材料はＴｃ （超伝導を示す臨界温度）以下の
温度で超伏電導状態を呈し、素子抵抗が無視できるため
、超伝導材料を配線材料とした場合、奇生容量が極限に
まで低下し、時定数を小さくできる。Superconducting materials exhibit a superconducting state at temperatures below Tc (critical temperature for superconductivity), and element resistance is negligible, so when superconducting materials are used as wiring materials, the parasitic capacitance decreases to the limit. , the time constant can be made smaller.
本発明における超伝導材料としては、例えば、Ｒ，Ｘ、
Ｚ、Ｄ、Ａからなる化合物Ｒ，ＸｘＺ７ＤδＡ（ｘが好
適に用いられる。Examples of superconducting materials in the present invention include R, X,
A compound R consisting of Z, D, and A, XxZ7DδA (x is preferably used).
（但し、
ＲはＳｃ、Ｙ、Ｌａおよびランタナイド族の元素
Ｘは周期律表第■族の元素
Ｚは遷移金属元素
りは周期律表第Ｖｌ族カルコゲン元素
ＡはＢ、Ｃ，Ｎ、Ｆ、Ｓｉ、Ｇｅの元素であって、各々
はグループ内の元素の１種または２種以上を含有し、α
≧Ｏである〉
上記式で示される超伝導材料はＴＣが高く、冷却が容易
で超伝導状態が得られやすいことから特に好ましい結果
を与える。(However, R is Sc, Y, La, the lanthanide group element Si, Ge elements, each containing one or more elements in the group, α
≧O> The superconducting material represented by the above formula has a high TC, is easy to cool, and is easy to obtain a superconducting state, and therefore gives particularly favorable results.
上記超伝導材料における周期律表第■族の元素Ｘとして
はＢａ、３ｒ、Ｃａが好ましい。また、遷金属元素Ｚと
してはＣｕが好ましい。周期律表第ｖＩ族カルコゲン元
索としてはｏ、ｓｅが好ましい。As the element X of group Ⅰ of the periodic table in the above-mentioned superconducting material, Ba, 3r, and Ca are preferable. Moreover, as the transition metal element Z, Cu is preferable. As the chalcogen base of Group VI of the periodic table, o and se are preferable.
さらに、化合物ＲｒＸＸＺ７Ｄ６Ａ（ｘのＲがＹ、Ｘが
Ｂａ、ＺがＣＵ、Ｄが○であつて、ｒ ｌｆｉ約１．０
１ｘが約２．０ 、 ｚが約３．０．９．０ ＞δ〉６
．５．０．１＞α＞ ０．００１のものが本発明の超伝
導材料としてより好ましい。Furthermore, the compound RrXXZ7D6A (R of x is Y, X is Ba, Z is CU, D is ○, and r lfi is about 1.0
1x is approximately 2.0, z is approximately 3.0.9.0 >δ〉6
．． 5.0.1>α>0.001 is more preferable as the superconducting material of the present invention.
上記超伝導材料Ｒ６ＸＸＺ２Ｄ６Ａ（ｘの組成を変化さ
せるには、例えば、Ｄグループの元素である０を変化さ
せることにより可能となる。これには−船釣にイオン注
入による０＋注入が容易である。従って、基板上にまず
超伝導材料の薄膜を形成させ、これに所定のパターンに
上記Ｏ注入等を行うことにより超伝導材料Ａの箇所に超
伝導材料Ｂの箇所を形成したりすることが可能となる。The composition of the superconducting material R6XXZ2D6A (x can be changed, for example, by changing 0, which is an element in the D group.) This can be easily done by 0+ implantation by ion implantation in boat fishing. Therefore, by first forming a thin film of superconducting material on a substrate and then injecting O into the film in a predetermined pattern, it is possible to form regions of superconducting material B in regions of superconducting material A. becomes.
センサーとしては、Ｓ ｉ （ＦＣ１＝１．１８Ｖ、
１．１ μｍ ） 、Ｉ ｎＳｂ （０，１８ｅＶ、６
．９ μｍ ）、Ｉ ｎｘ Ｇａ１−ｘ Ａ ５１−ｙ
Ｐ Ｖ 、Ｃｄ Ｓ （２，４１ｅＶ、０．５１／、
（ｍ ） 、ＰｂＳ （０，３９ｅＶ、 ３．２ μｍ
＞、Ｐｂ５ｅ （０，２７ｅＶ、４．６ μｍ ）の
他、不純物準位を利用した光センサー材料としてＧｅに
Ａｕ。As a sensor, S i (FC1=1.18V,
1.1 μm), InSb (0.18eV, 6
．． 9 μm), Inx Ga1-x A51-y
P V , Cd S (2,41 eV, 0.51/,
(m), PbS (0.39 eV, 3.2 μm
>, Pb5e (0.27 eV, 4.6 μm), as well as Ge and Au as optical sensor materials that utilize impurity levels.
ＨＣＩ等をドープしたもの等の半導体センサー材料が使
用される。Semiconductor sensor materials are used, such as those doped with HCI or the like.
［実施例］
以下、図面に示す実施例により本発明をさらに詳しく説
明する。ただし、これにより本発明が限定されるもので
はない。[Example] Hereinafter, the present invention will be explained in more detail with reference to Examples shown in the drawings. However, the present invention is not limited thereby.
第１図は本発明の一実施例の半導体装置を示すものであ
る。FIG. 1 shows a semiconductor device according to an embodiment of the present invention.
この半導体装置１は、光透過性の石英基板２の上にＴＣ
の高い超伝導材料へで形成した薄膜状の遮光部３と、Ｔ
Ｃの低い超伝導材料Ｂで形成した薄膜状の光透過部４と
が積層され、これらを覆うように超伝導材おＩＢの層間
絶縁膜５が積層され、さらに、光透過部４から透過し原
稿面８から反射してきた光を受光し得る位置にセンサー
６を設けである。そして、センサー６と層間絶縁膜５を
覆うように超伝導材料Ｂの絶縁膜７を形成しである。This semiconductor device 1 has a TC on a light-transmissive quartz substrate 2.
A thin film-like light shielding part 3 formed of a high superconducting material and T
A thin film-like light transmitting part 4 formed of a superconducting material B with a low C is laminated, and an interlayer insulating film 5 of the superconducting material and IB is laminated to cover these. A sensor 6 is provided at a position where it can receive the light reflected from the document surface 8. Then, an insulating film 7 made of superconducting material B is formed to cover the sensor 6 and the interlayer insulating film 5.
絶縁膜７の厚さとセンサー６の位置および光透過部との
位置関係は、原稿面からの光がセンサー６に確実に受光
されるように決定される。そして、ＴＣの高い超伝導材
料Ａをセンサーの配線材料も兼ねさせである。なお、第
１図の装置において、光透過部、層間絶縁膜、絶縁膜は
Ｔｃの低い超伝導材料Ｂで形成しであるが、それぞれの
機能をよく発揮させるために、超伝導材料Ｂの組成をそ
れぞれ異ならしめてもよいことはいうまでもない。The thickness of the insulating film 7, the position of the sensor 6, and the positional relationship with the light transmitting portion are determined so that the sensor 6 reliably receives light from the document surface. The superconducting material A with a high TC also serves as a wiring material for the sensor. In the device shown in Fig. 1, the light transmitting part, the interlayer insulating film, and the insulating film are formed of superconducting material B with a low Tc. It goes without saying that each may be made different.
［効果］
以上の説明で明らかなように、本発明の半導体装置は、
完全密着型等倍センサーとして使用した場合にその光応
答性が向上し、また、従来の金属配線の工程をなくすこ
とができるため製造工程数が低減できる。[Effects] As is clear from the above explanation, the semiconductor device of the present invention has the following effects:
When used as a fully contact type 1-magnification sensor, its photoresponsiveness is improved, and the number of manufacturing steps can be reduced because the conventional metal wiring process can be eliminated.
第１図は本発明の半導体装置を示す模式的断面図、第２
図はその斜視図、第３図は超伝導材料における自由キャ
リア数の違いによる光吸収率の波長依存性を示すグラフ
、第４図は従来の装置を示す模式的断面図である。
１・・・半導体装置、２・・・石英基板、３・・・遮光
部く超伝導材利へ）、
４・・・光透過部（超伝導材料Ｂ）、
５・・・層間絶縁膜（超伝導材料Ｂ）、６・・・センサ
ー、
７・・・絶縁膜（超伝導材料Ｂ）、
８・・・原稿面、FIG. 1 is a schematic cross-sectional view showing a semiconductor device of the present invention, and FIG.
The figure is a perspective view thereof, FIG. 3 is a graph showing the wavelength dependence of light absorption due to the difference in the number of free carriers in a superconducting material, and FIG. 4 is a schematic cross-sectional view showing a conventional device. DESCRIPTION OF SYMBOLS 1... Semiconductor device, 2... Quartz substrate, 3... Light shielding part to superconducting material), 4... Light transmitting part (superconducting material B), 5... Interlayer insulating film ( Superconducting material B), 6... Sensor, 7... Insulating film (Superconducting material B), 8... Original surface,
Claims (5)
光部とを有し、超伝導となる臨界温度が高い超伝導材料
で遮光部を、低い超伝導材料で光透過部を形成してなる
ことを特徴とする半導体装置。(1) A semiconductor device that detects light, which has a light-transmitting part and a light-blocking part, where the light-blocking part is made of a superconducting material that has a high critical temperature for becoming superconducting, and the light-transmitting part is made of a low superconducting material. A semiconductor device characterized by:
る特許請求の範囲第１項記載の半導体装置。(2) The semiconductor device according to claim 1, wherein the superconducting material with a high critical temperature also serves as a wiring material.
特許請求の範囲第１項記載の半導体装置。(3) The semiconductor device according to claim 1, wherein a superconducting material having a low critical temperature is disposed as an insulating film.
物Ｒ＿ｒＸ＿ｘＺ＿ｚＤ＿δＡ＿αである特許請求の範
囲第１項記載の半導体装置。 （但し、 ＲはＳｃ、Ｙ、Ｌａおよびランタナイド族の元素 Ｘは周期律表第II族の元素 Ｚは遷移金属元素 Ｄは周期律表第VI族カルコゲン元素 ＡはＢ、Ｃ、Ｎ、Ｆ、Ｓｉ、Ｇｅの元素 であって、各々はグループ内の元素の１種または２種以
上を含有し、α≧０である）(4) The semiconductor device according to claim 1, wherein the superconducting material is a compound R_rX_xZ_zD_δA_α consisting of R, X, Z, D, and A. (However, R is Sc, Y, La, and the lanthanide group element X is the element of Group II of the periodic table. Z is the transition metal element. D is the chalcogen element of Group VI of the periodic table. Si, Ge elements, each containing one or more elements in the group, α≧0)
、ＸがＢａ、ＺがＣｕ、ＤがＯであって、ｒが約１．０
、Ｘが約２．０、Ｚが約３．０、９．０＞δ＞６．５、
０．１＞α＞０．００１である特許請求の範囲第４項記
載の半導体装置。(5) R of the compound R_rX_xZ_zD_δA_α is Y
, X is Ba, Z is Cu, D is O, and r is approximately 1.0
, X is approximately 2.0, Z is approximately 3.0, 9.0>δ>6.5,
The semiconductor device according to claim 4, wherein 0.1>α>0.001.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62314646A JPH01155668A (en) | 1987-12-11 | 1987-12-11 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62314646A JPH01155668A (en) | 1987-12-11 | 1987-12-11 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01155668A true JPH01155668A (en) | 1989-06-19 |
Family
ID=18055834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62314646A Pending JPH01155668A (en) | 1987-12-11 | 1987-12-11 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01155668A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2710446A1 (en) * | 1993-09-21 | 1995-03-31 | Rybak Boris | Electrical conductors which are thermally superconducting in the positive centigrade range |
-
1987
- 1987-12-11 JP JP62314646A patent/JPH01155668A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2710446A1 (en) * | 1993-09-21 | 1995-03-31 | Rybak Boris | Electrical conductors which are thermally superconducting in the positive centigrade range |
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