JPH01170332U

JPH01170332U -

Info

Publication number: JPH01170332U
Application number: JP6481588U
Authority: JP
Priority date: 1988-05-17
Filing date: 1988-05-17
Publication date: 1989-12-01
Anticipated expiration: 2003-05-17
Also published as: JP2544207Y2

Description

[Brief explanation of the drawing]

第１図ａは本発明に係る集積型光ピツクアツプ
の一実施例の構成を示す平面図、第１図ｂはその
側面図、第２図ａは第１図ａの部分拡大図、第２
図ｂは第２図ａの―線断面図、第３図ａは他
の実施例の構成を示す平面図、第３図ｂはその側
面図、第４図は従来の集積型光ピツクアツプの構
成を示す側面図である。１……半導体レーザチツプ、２……導波路層、
３……バツフア層、４……基板、９……露出面、
１０……活性層、１３……ストツパ、１４……凹
部、１７……凸部。 FIG. 1a is a plan view showing the configuration of an embodiment of an integrated optical pickup according to the present invention, FIG. 1b is a side view thereof, FIG. 2a is a partially enlarged view of FIG. 1a, and FIG.
Figure b is a cross-sectional view taken along the line -- of Figure 2a, Figure 3a is a plan view showing the configuration of another embodiment, Figure 3b is a side view thereof, and Figure 4 is the configuration of a conventional integrated optical pickup. FIG. 1... Semiconductor laser chip, 2... Waveguide layer,
3... Buffer layer, 4... Substrate, 9... Exposed surface,
10... Active layer, 13... Stopper, 14... Concave portion, 17... Convex portion.

Claims

[Claims for Utility Model Registration] 1. A semiconductor laser device in which an active layer and a coating layer are laminated on a semiconductor substrate, a waveguide layer formed on the substrate with the active layer of the semiconductor laser device facing its end face, and a waveguide layer formed on the substrate. In the integrated optical pickup having the above, the semiconductor laser element is provided by bonding the laminated surface to the exposed surface of the substrate, which has been exposed by removing a part of the waveguide layer. An integrated optical pick-up featuring 2. The integrated optical pickup according to claim 1, wherein the semiconductor laser element is positioned in a plane parallel to the waveguide layer by the planar shape of the exposed surface.