JPH0118522B2 - - Google Patents
Info
- Publication number
- JPH0118522B2 JPH0118522B2 JP58026689A JP2668983A JPH0118522B2 JP H0118522 B2 JPH0118522 B2 JP H0118522B2 JP 58026689 A JP58026689 A JP 58026689A JP 2668983 A JP2668983 A JP 2668983A JP H0118522 B2 JPH0118522 B2 JP H0118522B2
- Authority
- JP
- Japan
- Prior art keywords
- weight
- dielectric constant
- parts
- capacitance
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
本発明は、主として、磁器コンデンサ用誘電体
として有用な高誘電率磁器組成物に関する。
従来この種の組成物としてはチタン酸バリウム
(BaTiO3)を主成分とし、これに、Bi2O3−
TiO2、Bi2O3−SnO2、Bi2O3−ZrO2などのビスマ
ス化合物に希土類を副成分として添加したもの、
または、MgO、SiO2等を副成分として添加した
ものが、誘電率が高く、大きな静電容量が得られ
ることから広く採用されている。しかしながら、
上記成分を含む組成物では高周波に対する誘電体
損失(tanδ)が大きい。また、誘電率を高くする
と、静電容量の温度変化率が大きくなり、逆にそ
の温度変化率を小さくすると誘電率が低下すると
いう相反する傾向を示し、このため、上記組成物
をコンデンサに適用した場合、小型、大容量化に
は自から限界があつた。
また、上記組成物のうち、副成分としてビスマ
ス化合物を含むものは、焼結時に、Bi2O3が蒸発
して磁器に歪が生じたり、また、組成割合が変化
して必要な電気特性にばらつきを生じたりする等
の問題がある。さらに、これを積層コンデンサに
適用した場合には、その内部電極としてPdある
いはAg−Pd合金が用いられていると、このPdと
Bi2O3とが反応し、電極の特性が損なわれる。こ
のため、Bi2O3と反応しない高価なPtを使用せざ
るをえないという問題もある。
本発明は上記の問題点に鑑みてなされたもので
あつて、誘電率が2400以上と高く、それにもかか
わらず広い温度範囲にわたつて静電容量の温度変
化率が小さく平坦で、かつ誘電体損失も小さい高
誘電体磁器組成物を提供することを目的とする。
本発明者らはチタン酸バリウム中に不純物とし
て存在するSrO、CaO等のアルカリ土類金属酸化
物、Na2O、K2O等のアルカリ金属酸化物、その
他Al2O3、SiO2などの酸化物のうち特にNa2O、
K2O等のアルカリ金属酸化物の含有量が電気的特
性に大きく影響することを見い出した。そこで、
本発明は上記の目的を達成するため、チタン酸バ
リウム中に存在する不純物としてのアルカリ金属
酸化物の含有量を低く制限するとともに、副成分
として従来のようなビスマス化合物を含まず、こ
れに代えて、Nb2O5、Co2O3およびSiO2を添加す
るようにしている。すなわち、本発明の高誘電率
磁器組成物は不純物としてのアルカリ金属酸化物
の含有量が0.04重量%以下のチタン酸バリウム
100重量部に対して、Nb2O5を1.0〜4.0重量部、
Co2O3を0.1〜0.8重量部、SiO2を0.1〜2.0重量部そ
れぞれ含有している。
上記成分範囲に限定した理由は次のとおりであ
る。まず、Na2O、K2Oなどのアルカリ金属酸化
物については、それがBaTiO3に対して不純物と
して0.04重量%を越えると誘電率が低下し、2400
以下の値となるためである。また、Nb2O5は上記
不純物を含むBaTiO3100重量部に対して1.0重量
部未満では焼結性が悪くなり、また静電容量の温
度変化率も大きくなりEIAに規定するX7R特性を
満足しなくなる。一方4.0重量部を越えると誘電
率が低下して2400以下の値となる。Co2O3は
BaTiO3100重量部に対して0.1重量部未満では静
電容量の温度変化率を小さくする効果が乏しく、
また0.8重量部を越えると誘電率の低下や静電容
量の温度変化率の悪化をまねく。SiO2は
BaTiO3100重量部に対して0.1重量部未満では焼
結性を向上させる効果に乏しく、また2.0重量部
を越えると誘電率の値が2400より低下するためで
ある。
以下、本発明を実施例に基づいてさらに詳細に
説明する。
実施例
この実施例においては、本発明に係る高誘電率
磁器組成物を製作する手順を第1図に示す製造工
程に沿つて説明し、また、これにより得られた上
記磁器組成物の電気的特性を調べた結果について
も併せて説明することにする。
まず、種々の純度のBaCO3とTiO2とを準備し、
これらをBaCO3とTiO2のモル比が1000となるよ
うに秤量し、メノウ石を用いたボールミルにて5
〜20時間湿式混合した(工程)。この混合物の
水分を蒸発させた後、1150℃の温度で2時間保持
して仮焼し(工程)、再びボールミルにて平均
粒子径が3ミクロン以下になるまで粉砕した(工
程)。こうして、第1表に示すA〜Eの純度が
それぞれ異なる5種類のチタン酸バリウムを得
た。なお、同表中A〜Dまではアルカリ金属酸化
物の含有量が本発明に係る範囲内にあり、Eのも
のは範囲外である。
The present invention relates primarily to high dielectric constant ceramic compositions useful as dielectrics for ceramic capacitors. Conventionally, this type of composition has barium titanate (BaTiO 3 ) as the main component, and Bi 2 O 3 −
Bismuth compounds such as TiO 2 , Bi 2 O 3 −SnO 2 , Bi 2 O 3 −ZrO 2 with rare earth added as a subcomponent;
Alternatively, materials to which MgO, SiO 2 , etc. are added as subcomponents are widely used because they have a high dielectric constant and can provide large capacitance. however,
A composition containing the above components has a large dielectric loss (tan δ) at high frequencies. In addition, when the dielectric constant is increased, the temperature change rate of capacitance increases, and conversely, when the temperature change rate is decreased, the dielectric constant decreases, which is a contradictory tendency.For this reason, the above composition is applied to capacitors. In this case, there was a limit to miniaturization and large capacity. In addition, among the above compositions, those containing bismuth compounds as subcomponents may cause Bi 2 O 3 to evaporate during sintering, causing distortion in the porcelain, or changing the composition ratio, resulting in poor electrical properties. There are problems such as variations. Furthermore, when this is applied to a multilayer capacitor, if Pd or Ag-Pd alloy is used as the internal electrode, this Pd
Reacts with Bi 2 O 3 and impairs the properties of the electrode. For this reason, there is also the problem that expensive Pt that does not react with Bi 2 O 3 must be used. The present invention has been made in view of the above problems, and has a high dielectric constant of 2400 or more, yet has a small temperature change rate of capacitance over a wide temperature range, and has a dielectric material. It is an object of the present invention to provide a high dielectric ceramic composition with low loss. The present inventors discovered that alkaline earth metal oxides such as SrO and CaO, alkali metal oxides such as Na 2 O and K 2 O, and other alkaline metal oxides such as Al 2 O 3 and SiO 2 that exist as impurities in barium titanate. Among oxides, especially Na 2 O,
It has been found that the content of alkali metal oxides such as K 2 O greatly affects the electrical characteristics. Therefore,
In order to achieve the above object, the present invention limits the content of alkali metal oxide as an impurity present in barium titanate to a low level, and does not contain a conventional bismuth compound as a subcomponent. Therefore, Nb 2 O 5 , Co 2 O 3 and SiO 2 are added. That is, the high dielectric constant ceramic composition of the present invention contains barium titanate containing 0.04% by weight or less of alkali metal oxide as an impurity.
1.0 to 4.0 parts by weight of Nb 2 O 5 to 100 parts by weight,
It contains 0.1 to 0.8 parts by weight of Co 2 O 3 and 0.1 to 2.0 parts by weight of SiO 2 . The reason for limiting the above component ranges is as follows. First, regarding alkali metal oxides such as Na 2 O and K 2 O, when they exceed 0.04% by weight as impurities relative to BaTiO 3 , the dielectric constant decreases, and the dielectric constant decreases to 2400.
This is because the values are as follows. In addition, if Nb 2 O 5 is less than 1.0 part by weight based on 100 parts by weight of BaTiO 3 containing the above impurities, sinterability will deteriorate and the temperature change rate of capacitance will also increase, making it impossible to satisfy the X7R characteristics specified by EIA. I won't. On the other hand, if it exceeds 4.0 parts by weight, the dielectric constant decreases to a value of 2400 or less. Co2O3 is
If it is less than 0.1 part by weight based on 100 parts by weight of BaTiO 3 , the effect of reducing the temperature change rate of capacitance is poor;
Moreover, if it exceeds 0.8 parts by weight, the dielectric constant decreases and the temperature change rate of capacitance deteriorates. SiO2 is
This is because if it is less than 0.1 part by weight based on 100 parts by weight of BaTiO 3 , the effect of improving sinterability is poor, and if it exceeds 2.0 parts by weight, the dielectric constant value will decrease below 2400. Hereinafter, the present invention will be explained in more detail based on examples. Example In this example, the procedure for manufacturing a high dielectric constant ceramic composition according to the present invention will be explained along the manufacturing process shown in FIG. The results of investigating the characteristics will also be explained. First, prepare BaCO 3 and TiO 2 of various purity,
These were weighed so that the molar ratio of BaCO 3 and TiO 2 was 1000, and mixed in a ball mill using agate for 50 minutes.
Wet mixed for ~20 hours (step). After the moisture in this mixture was evaporated, it was calcined by holding at a temperature of 1150° C. for 2 hours (step), and then ground again in a ball mill until the average particle size was 3 microns or less (step). In this way, five types of barium titanate having different purities, A to E shown in Table 1, were obtained. In addition, in the same table, the alkali metal oxide content of A to D is within the range according to the present invention, and that of E is outside the range.
【表】
次いで、Nb2O5、Co2O3およびSiO2を上記の各
種チタン酸バリウムに対して、第2表に示す組成
割合となるように秤量、混合し、前記と同様メノ
ウ石を用いたボールミルにて5〜20時間湿式混合
し、蒸発乾燥した(工程)。こうして得られた
各々の粉末を3重量%のポリビニルアルコールを
バインダとして混練し、造粒した後、2000Kg/cm2
の圧力で直径15mm、厚さ1mmの円板に成形した
(工程)。次いで、これらの成形円板を電気炉に
て(1200〜1350)℃で2時間焼成して磁器を得た
(工程)。
こうして得られた各磁器組成物の電気的特性を
調べるため、各磁器円板の両面にそれぞれ通常の
手法により銀電極を焼付けてコンデンサとなし、
各コンデンサの誘電率(ε)、誘電体損失
(tanδ)、および静電容量の温度変化率(ΔC/
C25)を測定した。この結果を同じく第2表に示
す。[Table] Next, Nb 2 O 5 , Co 2 O 3 and SiO 2 were weighed and mixed with the above various barium titanates so as to have the composition ratios shown in Table 2, and agate was mixed in the same manner as above. Wet mixing was carried out for 5 to 20 hours using the ball mill used, and the mixture was evaporated and dried (step). Each of the powders thus obtained was kneaded with 3% by weight of polyvinyl alcohol as a binder, and after granulation, 2000Kg/cm 2
It was molded into a disk with a diameter of 15 mm and a thickness of 1 mm using a pressure of 1.5 mm (process). Next, these molded discs were fired in an electric furnace at (1200 to 1350)°C for 2 hours to obtain porcelain (step). In order to investigate the electrical properties of each of the porcelain compositions obtained in this way, silver electrodes were baked on both sides of each porcelain disk using a conventional method to form a capacitor.
The dielectric constant (ε), dielectric loss (tanδ), and temperature change rate of capacitance (ΔC/
C25 ) was measured. The results are also shown in Table 2.
【表】
なお、同表中の各電気特性は次に示す条件で測
定した値である。
誘電率(ε)、誘電体損失(tanδ):温度25℃、
周波数1KHzで測定。
静電容量の温度変化率(ΔC/C25):温度25℃
での静電容量を基準としたときの各−55℃、+125
℃での変化率、および−55℃〜+125℃の範囲内
で絶対値としてその変化率が最大である値(|
ΔC/C25|)。
また、第2表中※印を付したものはこの発明の
範囲外のものであり、それ以外は発明範囲内のも
のである。
第2表から明らかなように、本発明に係る磁器
組成物は、誘電率(ε)がいずれも2400以上と高
く、しかもこのように高誘電率にもかかわらず静
電容量の温度変化率(ΔC/C25)も−55℃〜+
125℃の温度範囲内では±15%以内で平坦であり、
EIAに規定するX7R特性も満足している。また、
誘電体損失(tanδ)も1.1%以下で低く、すぐれ
た電気的特性を有するものであることが理解され
る。
以上のように、本発明によれば誘電率の値が
2400以上と高く、それにもかかわらず−55℃〜+
125℃の広い温度範囲にわたつて容量温度変化率
が±15%と平坦である。さらに、誘電体損失も小
さい。従つて、本発明の高誘電率磁器組成物を積
層セラミツクコンデンサに適用した場合には比較
的安価なPdまたはAg−Pd合金を内部電極に用い
ることができ、かつ高誘電率をもつ小型で大容量
のものが得られるという優れた効果が発揮され
る。なお、製作過程において微量のMnCO3、
Fe2O3等の還元防止剤を添加することは本発明に
係る組成物の特性を何ら損うものではない。[Table] Each electrical property in the table is a value measured under the following conditions. Dielectric constant (ε), dielectric loss (tanδ): Temperature 25℃,
Measured at a frequency of 1KHz. Temperature change rate of capacitance (ΔC/C 25 ): Temperature 25℃
-55°C and +125°C, respectively, based on the capacitance at
The rate of change in °C and the value at which the rate of change is maximum as an absolute value within the range of -55°C to +125°C (|
ΔC/C 25 |). Furthermore, those marked with * in Table 2 are outside the scope of this invention, and the others are within the scope of the invention. As is clear from Table 2, the ceramic compositions according to the present invention all have a high dielectric constant (ε) of 2400 or more, and in spite of this high dielectric constant, the temperature change rate of capacitance ( ΔC/C 25 ) also -55℃~+
It is flat within ±15% within the temperature range of 125℃,
The X7R characteristics specified by EIA are also satisfied. Also,
It is understood that the dielectric loss (tan δ) is also low at 1.1% or less, and has excellent electrical characteristics. As described above, according to the present invention, the dielectric constant value is
High at over 2400, yet -55℃~+
The capacitance temperature change rate is flat at ±15% over a wide temperature range of 125°C. Furthermore, dielectric loss is also small. Therefore, when the high dielectric constant ceramic composition of the present invention is applied to a multilayer ceramic capacitor, relatively inexpensive Pd or Ag-Pd alloy can be used for the internal electrode, and a small and large capacitor with a high dielectric constant can be used. The excellent effect of obtaining a large capacity is exhibited. In addition, trace amounts of MnCO 3 and
Addition of a reduction inhibitor such as Fe 2 O 3 does not impair the properties of the composition according to the invention.
図面は本発明に係る高誘電率磁器組成物を製作
する手順を示す製作工程図である。
The drawings are manufacturing process diagrams showing the procedure for manufacturing the high dielectric constant ceramic composition according to the present invention.
Claims (1)
が0.04重量%以下のチタン酸バリウム100重量部
に対し、Nb2O5を1.0〜4.0重量部、Co2O3を0.1〜
0.8重量部およびSiO2を0.1〜2.0重量部それぞれ含
有することを特徴とする高誘電率磁器組成物。1. 1.0 to 4.0 parts by weight of Nb 2 O 5 and 0.1 to 0.1 to 4.0 parts by weight of Co 2 O 3 to 100 parts by weight of barium titanate with an alkali metal oxide content of 0.04% by weight or less as an impurity.
A high dielectric constant ceramic composition containing 0.8 parts by weight and 0.1 to 2.0 parts by weight of SiO2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58026689A JPS59154704A (en) | 1983-02-20 | 1983-02-20 | High dielectric constant porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58026689A JPS59154704A (en) | 1983-02-20 | 1983-02-20 | High dielectric constant porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59154704A JPS59154704A (en) | 1984-09-03 |
| JPH0118522B2 true JPH0118522B2 (en) | 1989-04-06 |
Family
ID=12200356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58026689A Granted JPS59154704A (en) | 1983-02-20 | 1983-02-20 | High dielectric constant porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59154704A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61275164A (en) * | 1985-05-03 | 1986-12-05 | タム セラミツクス インコ−ポレイテツド | Dielectric ceramic composition having high permittivity and flat tc properties |
| JP2521252B2 (en) * | 1985-09-10 | 1996-08-07 | ティーディーケイ株式会社 | Dielectric porcelain composition |
| US4855266A (en) * | 1987-01-13 | 1989-08-08 | E. I. Du Pont De Nemours And Company | High K dielectric composition for use in multilayer ceramic capacitors having copper internal electrodes |
| US4816430A (en) * | 1987-06-09 | 1989-03-28 | Tam Ceramics, Inc. | Dielectric ceramic composition |
| JP4967599B2 (en) * | 2006-10-23 | 2012-07-04 | Tdk株式会社 | Barium titanate powder, dielectric ceramic composition and electronic component |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4959299A (en) * | 1972-10-12 | 1974-06-08 | ||
| JPS51143899A (en) * | 1975-06-06 | 1976-12-10 | Tdk Corp | Dielectric ceramic composition |
| JPS5788612A (en) * | 1980-11-25 | 1982-06-02 | Tdk Electronics Co Ltd | Dielectric porcelain composition |
-
1983
- 1983-02-20 JP JP58026689A patent/JPS59154704A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59154704A (en) | 1984-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6960547B2 (en) | Dielectric ceramic composition and capacitor using the same | |
| JP3383623B2 (en) | Capacitor and dielectric ceramic powders based on binary sintering flux of barium borate and zinc silicate | |
| US5571767A (en) | Low fire X7R dielectric compositions and capacitors made therefrom | |
| JP2978580B2 (en) | High dielectric constant dielectric porcelain composition | |
| JPH05109319A (en) | High dielectric constant dielectric porcilain composition | |
| JPH0118521B2 (en) | ||
| JPS6348826B2 (en) | ||
| JPS59154704A (en) | High dielectric constant porcelain composition | |
| JP3095941B2 (en) | Dielectric porcelain composition | |
| JP3064518B2 (en) | Dielectric porcelain composition | |
| JPH0332163B2 (en) | ||
| JPH0477698B2 (en) | ||
| JP2869900B2 (en) | Non-reducing dielectric porcelain composition | |
| JP2958826B2 (en) | Dielectric porcelain composition | |
| JPS5815078A (en) | High dielectric constant ceramic dielectric composition | |
| JPH05345664A (en) | High dielectric ceramic composition | |
| JPH0571538B2 (en) | ||
| JP3106371B2 (en) | Dielectric porcelain composition | |
| JPH02279561A (en) | Dielectric porcelain composition | |
| JP3303453B2 (en) | Dielectric porcelain composition | |
| JP3064519B2 (en) | Dielectric porcelain composition | |
| JPH0249307A (en) | Dielectric porcelain compound | |
| US4988651A (en) | Temperature compensating dielectric ceramic composition | |
| JPS6223405B2 (en) | ||
| JPH04334807A (en) | Dielectric porcelain composite |