JPH01187958A - Lead frame - Google Patents

Lead frame

Info

Publication number
JPH01187958A
JPH01187958A JP63012892A JP1289288A JPH01187958A JP H01187958 A JPH01187958 A JP H01187958A JP 63012892 A JP63012892 A JP 63012892A JP 1289288 A JP1289288 A JP 1289288A JP H01187958 A JPH01187958 A JP H01187958A
Authority
JP
Japan
Prior art keywords
wire
lead frame
hardness
metal piece
plating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63012892A
Other languages
Japanese (ja)
Inventor
Kiyoaki Tsumura
清昭 津村
Hitoshi Fujimoto
藤本　仁士
Taisuke Matsugi
眞継　泰典
Yoshifusa Ogawa
小川　義房
Koichi Nakagawa
中川　興一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63012892A priority Critical patent/JPH01187958A/en
Publication of JPH01187958A publication Critical patent/JPH01187958A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、銅系の合金材料を素材とするリードフレーム
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a lead frame made of a copper-based alloy material.

〔従来の技術〕[Conventional technology]

従来、この種のリードフレームは第４図および体５図に
示すように構成されている。これを同図に基づりて概略
説明すると、符号１で示すものは銅系の合金材料（Ｃｕ
−２％５ｎ−０，２％Ｎｔ）を素材とするリードフレー
ムとしての金属片で、半導体チップ２を接合するダイパ
ッド３と、このダイパッド３上のチップ電極４にＡｕ等
のワイヤ５によって接続されたインナリード６とからな
り、その全表裏面上にはニッケルによってめっき層７が
形成されている。そして、この金属片１の表側めっき層
７上には金あるいは銀等の金属によってめっき層８が形
成されている。また、９は前記ダイパッド３上に前記半
導体チップ２を接合する接着剤である。Conventionally, this type of lead frame has been constructed as shown in FIGS. 4 and 5. To briefly explain this based on the same figure, what is indicated by numeral 1 is a copper-based alloy material (Cu
-2%5n-0,2%Nt) as a lead frame, and is connected to a die pad 3 to which a semiconductor chip 2 is bonded, and a chip electrode 4 on this die pad 3 by a wire 5 made of Au or the like. A plating layer 7 of nickel is formed on all the front and back surfaces of the inner lead 6. On the front side plating layer 7 of this metal piece 1, a plating layer 8 is formed of a metal such as gold or silver. Further, 9 is an adhesive for bonding the semiconductor chip 2 onto the die pad 3.

ところで、このように構成されたリードフレームは、半
導体装置の製造におけるワイヤボンディング工程で金の
ワイヤ５を使用することを考慮すると、インナリード６
のワイヤボンド部６ａがフレーム硬度より小さい硬度を
もつ金、銀等の金属材料によってめっき処理が施されて
いることが望ましい。すなわち、金のワイヤ５に対して
、ワイヤボンド部６ａが金あるいは銀によってめっきさ
れていると、ワイヤボンディング時にワイヤ５がワイヤ
ボンド部６ａに十分に食い込んで接合性が良好なものに
なると共に、ワイヤテールの切り離しが円滑に行われる
からである。By the way, in the lead frame configured in this way, considering that the gold wire 5 is used in the wire bonding process in the manufacture of semiconductor devices, the inner lead 6 is
It is desirable that the wire bond portion 6a be plated with a metal material such as gold or silver having a hardness smaller than that of the frame. That is, if the wire bonding portion 6a of the gold wire 5 is plated with gold or silver, the wire 5 will sufficiently dig into the wire bonding portion 6a during wire bonding, resulting in good bonding performance. This is because the wire tail can be cut off smoothly.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、この種のリードフレームにおいては、金属片
１上にニッケルによるめっき層７および金。However, in this type of lead frame, the metal piece 1 is coated with a nickel plating layer 7 and gold.

銀によるめっき層８を形成する構造であるため、すなわ
ち２種の金属によってめっき処理を２回行わなければな
らないため、フレームの製造コストが嵩むという問題が
あった。Since the structure is such that the plating layer 8 is formed using silver, that is, the plating process must be performed twice using two types of metals, there is a problem in that the manufacturing cost of the frame increases.

本発明はこのような事情に鑑みなされたもので、金属片
のインナリードにおけるめっき処理を１回で済ませるこ
とができ、もってフレーム製造コストの低廉化を図るこ
とができるリードフレームを提供するものである。The present invention was made in view of the above circumstances, and it is an object of the present invention to provide a lead frame in which the inner lead of the metal piece can be plated only once, thereby reducing the frame manufacturing cost. be.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係るリードフレームは、その表面に銅めっき処
理が施された銅系の合金材料を素材とする金属片からな
り、この金属片のワイヤボンド部における。めっき層は
硬さがビッカース硬度１６０より小さい硬度をもち、か
つ厚さが５００人より大きい寸法に設定されているもの
である。The lead frame according to the present invention is made of a metal piece made of a copper-based alloy material whose surface is copper-plated, and the wire bonding portion of the metal piece is made of a copper-based alloy material. The plating layer has a hardness smaller than 160 Vickers hardness and a thickness larger than 500 hardness.

〔作　用〕[For production]

本発明においては、ワイヤボンディング工程でワイヤと
して金からなる材料を使用しても、ワイヤをワイヤボン
ド部に十分に食い込ませることができると共に、ワイヤ
テールの切り離しを円滑に行うことができる。In the present invention, even if a material made of gold is used as the wire in the wire bonding process, the wire can be sufficiently penetrated into the wire bond portion, and the wire tail can be smoothly separated.

〔実施例〕〔Example〕

第１図（ａｌおよび（ｂ）は本発明に係るリードフレー
ムを示す平面図と断面図で、同図以下において第４図お
よび第５図と同一の部材については同一の符号を付し、
詳細な説明は省略する。同図において、符号１１で示す
ものは銅からなるめっき層で、シアン化銅系のめっき浴
を使用することにより前記インナリード６のワイヤボン
ド部６ａに形成されており、その硬さがビッカース硬度
１６０より小さい硬度をもち、かつその厚さが５００人
より大きい寸法に設定されている。なお、図中斜線はめ
っき処理が施された部分を示す。FIGS. 1(al) and (b) are a plan view and a sectional view showing a lead frame according to the present invention, and in the following figures, the same members as in FIGS. 4 and 5 are designated by the same reference numerals.
Detailed explanation will be omitted. In the same figure, the reference numeral 11 indicates a plating layer made of copper, which is formed on the wire bond portion 6a of the inner lead 6 by using a copper cyanide-based plating bath, and its hardness is on the Vickers hardness level. The hardness is set to be less than 160, and the thickness is set to be greater than 500. Note that the diagonal lines in the figure indicate the portions that have been subjected to plating treatment.

このように構成されたリードフレームにおいては、ワイ
ヤボンディング工程でワイヤ５に金からなる材料を使用
しても、ワイヤ５をインナリード６のワイヤボンド部６
ａに十分に食い込ませることができると共に、ワイヤ５
の切り離しを円滑に行うことができる。In the lead frame configured in this way, even if a material made of gold is used for the wire 5 in the wire bonding process, the wire 5 is not connected to the wire bonding portion 6 of the inner lead 6.
a, and the wire 5
The separation can be performed smoothly.

したがって、本発明においては、インナリード６のワイ
ヤボンド部６ａにおけるめっき処理を１種の金属を使用
して１回で済ませることができる。Therefore, in the present invention, the plating process on the wire bond portion 6a of the inner lead 6 can be completed in one time using one type of metal.

ここで、ワイヤポンディング工程は、金属片１のグイパ
ッド３上に半導体チップ２を接合した後で行われる。Here, the wire bonding process is performed after the semiconductor chip 2 is bonded onto the pad 3 of the metal piece 1.

なお、本実施例においては、インナリード６のワイヤボ
ンド部６ａにのみめっき層１１を形成するものを示した
が、本発明はこれに限定されるものではなく、第２図ｔ
ａ＞および（ｂ）に示すようにインナリード６のワイヤ
ボンド部６ａのみならずダイパッド３０表面上にめっき
層１１を形成してもよく、また第３図（ａ＞および世）
に示すように金属片１の全表面記亘りめっき層１１を形
成しても何等差し支えない。In this embodiment, the plating layer 11 is formed only on the wire bond part 6a of the inner lead 6, but the present invention is not limited to this, and as shown in FIG.
As shown in FIGS. 3(a) and 3(b), the plating layer 11 may be formed not only on the wire bonding portion 6a of the inner lead 6 but also on the surface of the die pad 30.
There is no problem in forming the plating layer 11 over the entire surface of the metal piece 1 as shown in FIG.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、銅めっき処理が施
された銅系の合金材料を素材とする金属片からなり、こ
の金属片のワイヤボンド部におけるめっき層は、゛硬さ
がビッカース硬度１６０より小さい硬度をもち、かつ厚
さが５００人より大きい寸法に設定されているので、ワ
イヤボンディング工程でワイヤとして金からなる材料を
使用しても、ワイヤをワイヤボンド部に十分に食い込ま
せることができると共に、ワイヤの切り離しを円滑に行
うことができる。したがって、インナリードのワイヤボ
ンド部におけるめっき処理を１回で済ませることができ
るから、フレーム製造コストの低廉化を図ることができ
る。As explained above, according to the present invention, the metal piece is made of a copper-based alloy material that has been subjected to a copper plating process, and the plating layer at the wire bonding part of the metal piece has a hardness of Vickers hardness. Since the hardness is set to be less than 160 and the thickness is set to be greater than 500, even if a material made of gold is used as the wire in the wire bonding process, the wire can be sufficiently penetrated into the wire bonding part. At the same time, the wire can be cut off smoothly. Therefore, the plating process on the wire bonding portion of the inner lead can be completed in one time, so that the frame manufacturing cost can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）および（ｂｌは本発明に係るリードフレー
ムを示す平面図と断面図、第２図（ａ）および（ｂ）は
第２実施例を示す平面図と断面図、第３図（ａ）および
（ｂ）は第３実施例を示す平面図と断面図、第４図およ
び第５図は従来のリードフレームを示す平面図と断面図
である。 １・・・・金属片、２・・・・半導体チップ、３・・・
・グイパッド、５・・・・ワイヤ、６・・・・インナリ
ード、６ａ・・・・ワイヤボンド部、１１・・・・めっ
き層。 代　理　人　大岩増雄FIGS. 1(a) and (bl) are a plan view and a cross-sectional view showing a lead frame according to the present invention, FIGS. 2(a) and (b) are a plan view and a cross-sectional view showing a second embodiment, and FIG. (a) and (b) are a plan view and a sectional view showing a third embodiment, and FIGS. 4 and 5 are a plan view and a sectional view showing a conventional lead frame. 1... Metal piece; 2... Semiconductor chip, 3...
- Gui pad, 5... wire, 6... inner lead, 6a... wire bond part, 11... plating layer. Agent Masuo Oiwa

Claims (1)

【特許請求の範囲】[Claims] （１）その表面に銅めっき処理が施された銅系の合金材
料を素材とする金属片からなり、この金属片のワイヤボ
ンド部におけるめっき層は、硬さがビッカース硬度１６
０より小さい硬度をもち、かつ厚さが５００Åより大き
い寸法に設定されていることを特徴とするリードフレー
ム。(1) It consists of a metal piece made of a copper-based alloy material whose surface has been subjected to copper plating, and the plating layer at the wire bonding part of this metal piece has a hardness of 16 Vickers hardness.
A lead frame having a hardness smaller than 0 and a thickness larger than 500 Å.
JP63012892A 1988-01-22 1988-01-22 Lead frame Pending JPH01187958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63012892A JPH01187958A (en) 1988-01-22 1988-01-22 Lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63012892A JPH01187958A (en) 1988-01-22 1988-01-22 Lead frame

Publications (1)

Publication Number Publication Date
JPH01187958A true JPH01187958A (en) 1989-07-27

Family

ID=11818047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63012892A Pending JPH01187958A (en) 1988-01-22 1988-01-22 Lead frame

Country Status (1)

Country Link
JP (1) JPH01187958A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0917211A3 (en) * 1997-11-17 1999-11-17 Canon Kabushiki Kaisha Moldless semiconductor device and photovoltaic device module making use of the same
CN110690403A (en) * 2015-09-11 2020-01-14 日立金属株式会社 Lead member for battery and method for manufacturing lead member for battery

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0917211A3 (en) * 1997-11-17 1999-11-17 Canon Kabushiki Kaisha Moldless semiconductor device and photovoltaic device module making use of the same
CN110690403A (en) * 2015-09-11 2020-01-14 日立金属株式会社 Lead member for battery and method for manufacturing lead member for battery
CN110690403B (en) * 2015-09-11 2022-12-20 日立金属株式会社 Lead member for battery and method for manufacturing lead member for battery

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