JPH01191084A - Radiation detector - Google Patents

Radiation detector

Info

Publication number
JPH01191084A
JPH01191084A JP1444688A JP1444688A JPH01191084A JP H01191084 A JPH01191084 A JP H01191084A JP 1444688 A JP1444688 A JP 1444688A JP 1444688 A JP1444688 A JP 1444688A JP H01191084 A JPH01191084 A JP H01191084A
Authority
JP
Japan
Prior art keywords
scintillator
light
polycrystalline
thickness
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1444688A
Other languages
Japanese (ja)
Other versions
JP2822185B2 (en
Inventor
Minoru Yoshida
稔 吉田
Hideji Fujii
秀司 藤井
Manabu Nakagawa
中河 学
Fumio Kawaguchi
文男 川口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Healthcare Manufacturing Ltd
Original Assignee
Hitachi Medical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Medical Corp filed Critical Hitachi Medical Corp
Priority to JP63014446A priority Critical patent/JP2822185B2/en
Publication of JPH01191084A publication Critical patent/JPH01191084A/en
Application granted granted Critical
Publication of JP2822185B2 publication Critical patent/JP2822185B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Measurement Of Radiation (AREA)
  • Luminescent Compositions (AREA)

Abstract

PURPOSE:To effectively utilize the light emission of a scintillator which is sintered by using a hot hydrostatic pressing method effectively and to improve the sensitivity of the detector by reducing the thickness of the scintillator to 0.5-1.5mm and reducing the light loss. CONSTITUTION:When an X-ray photon 2 enters the polycrystalline scintillator 1, the scintillator is excited with the X-ray photon 2 to emit scintillation light 3 in a 4pi direction. This light 3 is scattered by interfaces of scintillator crystal particles and emitted out of the polycrystalline scintillator 1 as scattered light. The quantity of the scintillation light 3 is proportional to the quantity of the incident X-ray photon 2. The quantity of the emitted light is measured to measure a radiation dose secondarily. The density of this scintillator-sintered body is set to >=95% and the thickness of the scintillator-sintered body is 0.5-1.5mm.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は計算機利用X線断層像撮影装置(X線CT装置
)に用いるシンチレータと半導体受光素子とからなる固
体放射線検出器に係り、特にシンチレータの発光を有効
に利用し検出器の感度を向させるのに好適な検出器構造
に関する。
Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a solid-state radiation detector comprising a scintillator and a semiconductor light-receiving element used in a computer-aided X-ray tomography apparatus (X-ray CT apparatus). The present invention relates to a detector structure suitable for effectively utilizing the light emitted from the light to improve the sensitivity of the detector.

〔従来の技術〕[Conventional technology]

従来の多結晶質シンチレータを用いた放射線検出器では
特開昭59−27283号記載のように、シンチレータ
の厚さは入射する放射線を完全に阻止するにはその厚さ
を厚くする必要があり、シンチレータの発光を有効に利
用することに関しては特に配慮されていなかった。
In conventional radiation detectors using polycrystalline scintillators, as described in JP-A-59-27283, the thickness of the scintillator must be increased to completely block incident radiation. No particular consideration was given to effectively utilizing the light emitted from the scintillator.

〔発明が解決しようとする課頭〕[The problem that the invention attempts to solve]

上記従来技術は多結晶質シンチレータ特有の半透明体の
欠点であるシンチレータ内での光の吸収および散乱によ
る効率低下に対する配慮がされておらず、シンチレータ
の実効々率が低くなり検出器の感度が低く、さらに入射
放射線のエネルギー依存性が高い等の間層があった。
The above-mentioned conventional technology does not take into account the drawback of the translucent body of polycrystalline scintillators, which is the reduction in efficiency due to absorption and scattering of light within the scintillator, which lowers the effective rate of the scintillator and reduces the sensitivity of the detector. There was a layer between low and high dependence on the energy of incident radiation.

本発明は、多結晶質シンチレータの内部での吸収、散乱
による光損失を低減させ、効率の良い放射線検出器を実
現させるとの課題を解決することにある。
The present invention aims to solve the problem of realizing an efficient radiation detector by reducing light loss due to absorption and scattering inside a polycrystalline scintillator.

〔課題を解決するための手段〕[Means to solve the problem]

上記課題は多結晶質シンチレータの焼結法として熱間静
水圧加圧(HIP)法を用い、焼結されたシンチレータ
の厚さを0.5〜1.5mmと薄くし光損失を減少させ
ることにより解決される。
The above problem is to use hot isostatic pressing (HIP) as a sintering method for polycrystalline scintillators, reduce the thickness of the sintered scintillator to 0.5 to 1.5 mm, and reduce optical loss. It is solved by

〔作用〕[Effect]

第1図は多結晶質シンチレータの断面図であるが、多結
晶質シンチレータ1にX線光子2が入射するとX線光子
2により励起され4π方向にシンチレーション光3が発
光する。この先3はシンチレータ結晶粒子の界面で散乱
され散乱光となって多結品質シンチレータlの外部へ放
射される。このシンチレーション光3の光量は入射する
X線光子2の量に比例した量を示す。したがって放射さ
れた光量を計測することにより放射線量を二次的に計測
することができる。
FIG. 1 is a cross-sectional view of a polycrystalline scintillator. When an X-ray photon 2 is incident on the polycrystalline scintillator 1, it is excited by the X-ray photon 2 and scintillation light 3 is emitted in the 4π direction. The light 3 is scattered at the interface of the scintillator crystal particles, becomes scattered light, and is emitted to the outside of the multi-crystalline scintillator 1. The amount of scintillation light 3 is proportional to the amount of incident X-ray photons 2. Therefore, the radiation dose can be measured secondarily by measuring the amount of emitted light.

多結晶質シンチレータは単結晶シンチレータに比較して
感度−様性が勝れている反面、前述のようにシンチレー
タ粒子界面での光の散乱、吸収が多いためシンチレーシ
ョン光3が多結晶質シンチレータ1外へ取り出しにくく
、さらに粒界が多いいため実効密度が単結晶に比較して
低くなると言う欠点がある。本発明ではこれらの間層点
を解決するため以下のような手段を用いている。第1に
多結晶質シンチレータの焼結法としてHI P法を用い
る。原料のGd2O2S:Pr、F、Ceけい光体は発
光効率が高く、X線阻止能も大きい有利な物質であるが
1組成中のSが分屏されやすく。
Although polycrystalline scintillators have better sensitivity characteristics than single-crystal scintillators, as mentioned above, there is a lot of light scattering and absorption at the scintillator particle interface, so the scintillation light 3 is more concentrated than the polycrystalline scintillators 1. It has the disadvantage that it is difficult to extract into a single crystal, and because there are many grain boundaries, the effective density is lower than that of a single crystal. In the present invention, the following means are used to solve these interlayer points. First, the HIP method is used as a sintering method for polycrystalline scintillators. The raw material Gd2O2S:Pr, F, Ce phosphor is an advantageous material with high luminous efficiency and large X-ray blocking ability, but the S in the composition tends to be separated.

また単結晶化が非常に困難な物質である。しかし)I 
I P法ではカプセル内に原料を封止込んで等方的高圧
、高温下で焼結するため、Sの飛散がなく安定にかつ均
質な焼結が行なえる。また実効密度95〜99%が実現
可能であり密度低下によるX線阻止能の低下を防止でき
る。さらにけい光体粒子間の空間をほとんど無くするこ
とが出来るため透光性が向上し光のロスを少なくするこ
とが可能となる。このようにして焼結した多結晶質シン
チレータを厚さを薄くして用いることにより、さらに効
率を低下することなく使用できる。
It is also a substance that is extremely difficult to crystallize. However) I
In the IP method, the raw material is sealed in a capsule and sintered isotropically under high pressure and high temperature, so stable and homogeneous sintering can be performed without scattering of S. Further, an effective density of 95 to 99% can be achieved, and a decrease in X-ray stopping ability due to a decrease in density can be prevented. Furthermore, since the spaces between the phosphor particles can be almost eliminated, translucency is improved and light loss can be reduced. By using the polycrystalline scintillator sintered in this way with a reduced thickness, it can be used without further deterioration in efficiency.

〔実施例〕〔Example〕

以下、本発明の一実施例を第2図により説明する。多結
晶質シンチレータ1は半導体受光素子4の受光面5と接
する面を除き他の面を光反射材7(例えばMgO,Ti
O2,Al2O3、等の粉末を塗布するか、AQ、Ag
等の金属を蒸着により施膜する)により被い、入射した
X線光子2により励起され発光されたシンチレーション
光3を効率よく補強用基板6上に設けられた半導体受光
素子4の受光面5に導く構造とする。受光面5に達した
光3は光電効果により電流信号として取り出される。X
線光子2により励起され発光するシンチレーション光3
は入射X線光子2の量に比例した量となり、さらに半導
体受光素子4は入射した光の量に比例した光電流を発す
るため光電流を計測することにより二次的に入射X線(
又はその他の放射線)の量を検出する放射線固体検出器
が構成される。多結晶質シンチレータ1はGd2O2S
: Pr、F、Cef&HIP法によす焼結したものを
0 、5 mm〜1.5mm厚の範囲内で用いる。
An embodiment of the present invention will be described below with reference to FIG. The polycrystalline scintillator 1 is coated with a light reflecting material 7 (for example, MgO, Ti
Apply powder such as O2, Al2O3, etc., or apply powder such as AQ, Ag
The scintillation light 3 excited and emitted by the incident X-ray photons 2 is efficiently applied to the light-receiving surface 5 of the semiconductor light-receiving element 4 provided on the reinforcing substrate 6. Create a guiding structure. The light 3 reaching the light receiving surface 5 is extracted as a current signal due to the photoelectric effect. X
Scintillation light 3 excited and emitted by line photon 2
is proportional to the amount of incident X-ray photons 2, and since the semiconductor photodetector 4 emits a photocurrent proportional to the amount of incident light, by measuring the photocurrent, the amount of incident X-ray photons (
or other radiation) is constructed. Polycrystalline scintillator 1 is Gd2O2S
: Pr, F, Cef & HIP method sintered material is used within the thickness range of 0.5 mm to 1.5 mm.

本実施例によれば、シンチレータを多結晶質シンチレー
タ1とすることにより一様性が向上する。
According to this embodiment, uniformity is improved by using the polycrystalline scintillator 1 as the scintillator.

すなわち、けい光体粉末は固々の効率にバラツキが有っ
ても分散されることにより集合体としての焼結体では効
率が平均化されて一様性が良くなる。
That is, even if the efficiency of the phosphor powder varies, it is dispersed, so that in the sintered body as an aggregate, the efficiency is averaged and the uniformity is improved.

焼結法としてHIP法を用いることにより単結晶化の困
難な発光効率の高いけい光体を95〜99%程度の実効
密度で焼結することが可能となり、透光性の勝れた( 
I IQm厚で約55%の透過率)多結&’Rシンチレ
ータの実現が可能となる。
By using the HIP method as a sintering method, it is possible to sinter a phosphor with high luminous efficiency that is difficult to single crystallize at an effective density of about 95 to 99%, and it has excellent translucency (
It becomes possible to realize a multi-connection &'R scintillator (with a transmittance of approximately 55% at IIQm thickness).

第3図は本発明による多結晶質シンチレータの板厚とX
線(120kV)励起による発光出力、板厚とA光源に
よる全光透過率の関係を示す図であるが、シンチレータ
の板厚が0.5〜1.5mmの範囲内では発光出力が比
較的高く、光透過率も高いさらに第4図はXICTIC
用検出器に応用した場合の多結晶質シンチレータの板厚
と検出器量子ノイズの関係を電離箱検出器と対比して表
わした図であるが、0.5〜1.5mmの範囲では電離
箱検出よりも20%強量子ノイズも小さな値を示し、検
出器の高性能化が実現できる。
Figure 3 shows the thickness and X of the polycrystalline scintillator according to the present invention.
This is a diagram showing the relationship between the light emission output due to linear (120 kV) excitation, the plate thickness, and the total light transmittance by light source A. The light emission output is relatively high when the scintillator plate thickness is in the range of 0.5 to 1.5 mm. , and also has high light transmittance. Figure 4 shows XICTIC.
This figure shows the relationship between the thickness of a polycrystalline scintillator and detector quantum noise when applied to a commercial detector in comparison with an ionization chamber detector. Quantum noise is 20% stronger than detection and shows a smaller value, making it possible to improve the performance of the detector.

〔発明の効果〕〔Effect of the invention〕

本発明によれば検出器の感度−様性が図れ、感度も電離
箱検出器に比較して1.3〜1.5倍。
According to the present invention, the sensitivity of the detector can be improved, and the sensitivity is 1.3 to 1.5 times that of an ionization chamber detector.

CdW○4単結晶を用いた検出器に対し2.5倍以上、
量子ノイズは電離箱検出器に比較して20%強低減化が
図れ、コストも単結晶シンチレータに比較して約1/2
と経済的となり、X線CT装置の高画質化、低線量化が
実現できる。
2.5 times more than a detector using CdW○4 single crystal,
Quantum noise can be reduced by over 20% compared to an ionization chamber detector, and the cost is about 1/2 compared to a single crystal scintillator.
This makes it possible to achieve higher image quality and lower radiation dose in X-ray CT equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による多結晶質シンチレータの断面図、
第2図は本発明の一実施例の放射線固体検出器の一部欠
斜視図、第3図は本発明のシンチレータの板厚と発光出
力、光透過率との関係を示す実測値、第4図は本発明の
一実施例の放射線検出器の量子ノイズ量を電離箱検出器
との対比で示す実開値。 1・・・多結晶質シンチレータ、2・・・X線光子、3
・・・シンチレーション光、4・・・半導体受光素子。 5・・・受光面、6・・・補強基板、7・・・光反射膜
FIG. 1 is a cross-sectional view of a polycrystalline scintillator according to the present invention;
FIG. 2 is a partially cutaway perspective view of a solid-state radiation detector according to an embodiment of the present invention, FIG. 3 is an actual measurement value showing the relationship between the plate thickness, light emission output, and light transmittance of the scintillator of the present invention, and FIG. The figure shows actual open values showing the quantum noise amount of a radiation detector according to an embodiment of the present invention in comparison with an ionization chamber detector. 1... Polycrystalline scintillator, 2... X-ray photon, 3
... Scintillation light, 4... Semiconductor light receiving element. 5... Light receiving surface, 6... Reinforcement substrate, 7... Light reflecting film.

Claims (1)

【特許請求の範囲】 1、けい光体粉末を焼結し半透明化したシンチレータ焼
結体と半導体受光素子とを組合せた放射線検出器におい
て、シンチレータ焼結体の密度を95%以上とし、シン
チレータ焼結体の厚さを0.5mm〜1.5mmの範囲
内とする事を特徴とする放射線検出器。 2、前記けい光体粉末としてGd_2O_2S:Pr、
F、Ceを用いることを特徴とする特許請求の範囲第1
項記載の放射線検出器。 3、前記けい光体粉末を焼結する手段として熱間静水圧
加圧(HIP)法を用いる事を特徴とする特許請求の範
囲第1項および第2項記載の放射線検出器。
[Claims] 1. In a radiation detector combining a scintillator sintered body made of phosphor powder to make it translucent and a semiconductor light-receiving element, the scintillator sintered body has a density of 95% or more, and the scintillator A radiation detector characterized in that the thickness of the sintered body is within the range of 0.5 mm to 1.5 mm. 2. Gd_2O_2S:Pr as the phosphor powder;
Claim 1 characterized in that F and Ce are used.
Radiation detector described in section. 3. The radiation detector according to claims 1 and 2, characterized in that a hot isostatic pressing (HIP) method is used as a means for sintering the phosphor powder.
JP63014446A 1988-01-27 1988-01-27 Radiation detector Expired - Lifetime JP2822185B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63014446A JP2822185B2 (en) 1988-01-27 1988-01-27 Radiation detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63014446A JP2822185B2 (en) 1988-01-27 1988-01-27 Radiation detector

Publications (2)

Publication Number Publication Date
JPH01191084A true JPH01191084A (en) 1989-08-01
JP2822185B2 JP2822185B2 (en) 1998-11-11

Family

ID=11861258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63014446A Expired - Lifetime JP2822185B2 (en) 1988-01-27 1988-01-27 Radiation detector

Country Status (1)

Country Link
JP (1) JP2822185B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784801A4 (en) * 1994-09-29 1998-08-19 Yissum Res Dev Co A radiation detection system and processes for preparing the same
WO2016021540A1 (en) * 2014-08-08 2016-02-11 東レ株式会社 Scintillator panel and radiation detector
CN106575534A (en) * 2014-08-08 2017-04-19 东丽株式会社 Method for manufacturing display member

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190281A (en) * 1986-02-18 1987-08-20 Toshiba Corp Scintillator for radiation detector and production thereof
JPS6318286A (en) * 1986-07-11 1988-01-26 Hitachi Ltd radiation detector
JPS63113388A (en) * 1986-04-30 1988-05-18 Hitachi Metals Ltd scintillator material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62190281A (en) * 1986-02-18 1987-08-20 Toshiba Corp Scintillator for radiation detector and production thereof
JPS63113388A (en) * 1986-04-30 1988-05-18 Hitachi Metals Ltd scintillator material
JPS6318286A (en) * 1986-07-11 1988-01-26 Hitachi Ltd radiation detector

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0784801A4 (en) * 1994-09-29 1998-08-19 Yissum Res Dev Co A radiation detection system and processes for preparing the same
WO2016021540A1 (en) * 2014-08-08 2016-02-11 東レ株式会社 Scintillator panel and radiation detector
CN106575534A (en) * 2014-08-08 2017-04-19 东丽株式会社 Method for manufacturing display member
CN106663488A (en) * 2014-08-08 2017-05-10 东丽株式会社 Scintillator panel and radiation detector
JPWO2016021540A1 (en) * 2014-08-08 2017-05-18 東レ株式会社 Scintillator panel and radiation detector
US10580547B2 (en) 2014-08-08 2020-03-03 Toray Industries, Inc. Scintillator panel and radiation detector

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