JPH0119453B2 - - Google Patents
Info
- Publication number
- JPH0119453B2 JPH0119453B2 JP60023940A JP2394085A JPH0119453B2 JP H0119453 B2 JPH0119453 B2 JP H0119453B2 JP 60023940 A JP60023940 A JP 60023940A JP 2394085 A JP2394085 A JP 2394085A JP H0119453 B2 JPH0119453 B2 JP H0119453B2
- Authority
- JP
- Japan
- Prior art keywords
- tin
- molybdenum alloy
- molybdenum
- thin film
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 56
- JCLOGSKIMBJQAA-UHFFFAOYSA-N [Mo].[Sn] Chemical compound [Mo].[Sn] JCLOGSKIMBJQAA-UHFFFAOYSA-N 0.000 claims description 52
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 30
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims description 22
- 239000011733 molybdenum Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 description 45
- 239000000203 mixture Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 22
- 238000001704 evaporation Methods 0.000 description 20
- 230000008020 evaporation Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 13
- 239000010410 layer Substances 0.000 description 11
- 206010034960 Photophobia Diseases 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 208000013469 light sensitivity Diseases 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 229920003002 synthetic resin Polymers 0.000 description 4
- 239000000057 synthetic resin Substances 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000009466 transformation Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910003069 TeO2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24306—Metals or metalloids transition metal elements of groups 3-10
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24312—Metals or metalloids group 14 elements (e.g. Si, Ge, Sn)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2531—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising glass
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、記録媒体用錫−モリブデン合金に関
する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a tin-molybdenum alloy for recording media.
（従来の技術）
近年になつて、高速ランダムアクセスの可能な
高密度大容量の情報記録媒体円盤についての研究
開発が盛んに行なわれるようになつたが、レーザ
光スポツトの照射による情報の記録再生が可能
で、かつ、レーザ光または／及び必要に応じて適
当な補助手段をも用いて記録された情報を消去
し、新しい情報に書換えうるような機能も備えて
いる如き新規な記録媒体についての探索も行なわ
れている。(Prior Art) In recent years, research and development has been actively conducted on high-density, large-capacity information recording media disks that can be accessed at high speed and randomly. new recording media that are capable of erasing recorded information and rewriting it with new information using laser light and/or appropriate auxiliary means as necessary. Explorations are also underway.
ところで、レーザ光を用いて情報の記録、再生
が行なわれるようにされている記録媒体につい
て、レーザ光ビームのスポツトによる加熱作用に
より、記録媒体にどのような物理的な変化を生じ
させて情報の記録を行なうようにしているのかに
着目して、現在までに提案されている多くの記録
媒体を分類すると、ピツト形成型、泡あるいは凹
凸形成型、光磁気型、相変化型（熱エネルギによ
り光の透過率、反射率、吸収率等に変化が生じる
熱変態型）等の各種型式の記録媒体に大別でき
る。 By the way, regarding a recording medium on which information is recorded and reproduced using a laser beam, what kind of physical change is caused in the recording medium by the heating effect of the spot of the laser beam? The many recording media that have been proposed to date can be categorized based on how they perform recording: pit-forming type, bubble or unevenness-forming type, magneto-optical type, and phase-change type (which uses thermal energy to generate light). It can be broadly classified into various types of recording media, such as thermal transformation type (thermal transformation type) in which changes occur in transmittance, reflectance, absorption rate, etc.
そして、前記した各種型式の記録媒体の内で相
変化型に属する記録媒体は、既記録情報の消去の
可能性もあるという点で注目されていて、現在ま
でにこの種の記録媒体としては、カルコゲナイド
系の物質（ゲルマニウム、テルル、アンチモン、
シリコン、砒素、ビスマス、インジユウム、ガリ
ユウム、タリウム、セレン、硫黄）の色々な組合
わせからなる組成物の薄膜や、低級酸化物（例え
ば、TeとTeO2の混合組成物等）の薄膜を用いた
記録媒体が提案されている。 Of the various types of recording media mentioned above, phase-change recording media have attracted attention because of the possibility of erasing previously recorded information, and to date, as this type of recording media, Chalcogenide substances (germanium, tellurium, antimony,
Recording using thin films of compositions consisting of various combinations of silicon, arsenic, bismuth, indium, gallium, thallium, selenium, sulfur) and thin films of lower oxides (for example, mixed compositions of Te and TeO2, etc.) medium is proposed.
（発明が解決しようとする問題点）
ところが、カルコゲナイド系の物質の色々な組
合わせからなる組成物の薄膜や、低級酸化物（例
えば、TeとTeO2の混合組成物等）の薄膜を用い
て構成されている既提案の記録媒体では、レーザ
光強度（記録媒体に相変化を起こさせることがで
きる強度範囲内のレーザ光強度であつて、記録媒
体にその強度のレーザ光が照射された部分からの
再生信号中における２次高調波歪が極小になされ
る如きレーザ光強度）が一定となされる如き記録
媒体の薄膜を構成している物質の組成範囲が狭い
ので、所定の特性の記録媒体の大量生産を簡単に
行なうことができないという点が問題になつた。(Problem to be Solved by the Invention) However, it is possible to use thin films of compositions made of various combinations of chalcogenide-based substances or thin films of lower oxides (for example, mixed compositions of Te and TeO2, etc.). In the previously proposed recording media, laser light intensity (laser light intensity within the intensity range that can cause a phase change in the recording medium, from the part where the recording medium is irradiated with laser light of that intensity) Since the composition range of the material constituting the thin film of the recording medium is narrow enough to minimize the second harmonic distortion in the reproduced signal (laser light intensity), the composition range of the material constituting the thin film of the recording medium is narrow. The problem was that mass production could not be easily carried out.
（問題点を解決するための手段）
本発明は、錫が50原子％乃至90原子％であつて
残部がモリブデンである記録媒体用錫−モリブデ
ン合金を提供するものである。(Means for Solving the Problems) The present invention provides a tin-molybdenum alloy for recording media, containing 50 atomic % to 90 atomic % of tin and the balance being molybdenum.
（実施例）
本発明は相変化型（熱エネルギにより光の透過
率、反射率、吸収率等に変化が生じる熱変態型）
の記録媒体に適する記録材料の探索に当り錫とモ
リブデンとからなる合金に着目し、その錫−モリ
ブデン合金におけるモリブデンと錫との組成を変
化させて、錫が50原子％乃至90原子％であつて残
部がモリブデンであるような組成範囲の錫−モリ
ブデン合金が、相変化型の記録媒体に適した特性
を備えていることを見出したことに基づいて、本
発明の記録媒体用錫−モリブデン合金を完成させ
たものである。(Example) The present invention is a phase change type (thermal transformation type in which light transmittance, reflectance, absorption rate, etc. change due to thermal energy)
In searching for a recording material suitable for recording media, we focused on an alloy consisting of tin and molybdenum, and by changing the composition of molybdenum and tin in the tin-molybdenum alloy, we created a material with tin content of 50 atomic percent to 90 atomic percent. Based on the discovery that a tin-molybdenum alloy having a composition range in which the balance is molybdenum has properties suitable for a phase change type recording medium, the present invention has developed a tin-molybdenum alloy for recording media. It has been completed.
次に、添付図面を参照しながら本発明の記録媒
体用錫−モリブデン合金について詳細に説明す
る。 Next, the tin-molybdenum alloy for recording media of the present invention will be described in detail with reference to the accompanying drawings.
第１図は、二元蒸着法を適用して本発明の記録
媒体用錫−モリブデン合金、すなわち、錫が50原
子％乃至90原子％であつて残部がモリブデンであ
るような記録媒体用錫−モリブデン合金による薄
膜記録媒体を基板表面に付着形成させるようにす
る成膜装置の概略構成を示す斜視図である。 FIG. 1 shows a tin-molybdenum alloy for recording media of the present invention obtained by applying a binary vapor deposition method, that is, a tin-molybdenum alloy for recording media in which the tin content is 50 atomic % to 90 atomic % and the balance is molybdenum. 1 is a perspective view showing a schematic configuration of a film forming apparatus that allows a thin film recording medium made of a molybdenum alloy to be deposited on a substrate surface.
この第１図において、１は表面に対して記録媒
体用錫−モリブデン合金が付着形成されるべき基
板であり、前記の基板１としては、例えばガラス
円板、あるいはアクリル樹脂の円板、その他適当
な材料による円板が用いられてよい。 In FIG. 1, reference numeral 1 denotes a substrate on which a tin-molybdenum alloy for recording media is to be adhered and formed, and the substrate 1 may be, for example, a glass disk, an acrylic resin disk, or any other suitable material. A disc made of suitable material may be used.
２は前記した基板１を高速に回転させる回転軸
であつて、この回転軸２は図示されていない回転
駆動装置（例えば、モータ）によつて所定の回転
数で高速に回転される。 Reference numeral 2 denotes a rotating shaft for rotating the substrate 1 described above at high speed, and this rotating shaft 2 is rotated at a predetermined number of rotations at high speed by a rotation drive device (for example, a motor) not shown.
３，４は、それぞれ蒸発材料を収容するボート
であり、また、５，６は前記したボート３，４を
加熱する電熱線であり、前記したボート３と電熱
線５とは一方の蒸発源Ａを構成し、また、前記し
たボート４と電熱線６とは他方の蒸発源Ｂを構成
しており、前記した一方の蒸発源Ａでは、それの
ボート３中に収容されている錫を加熱蒸発させ、
また、前記した他方の蒸発源Ｂでは、それのボー
ト４中に収容されているモリブデンを加熱蒸発さ
せる。 Reference numerals 3 and 4 are boats that accommodate evaporation materials, and 5 and 6 are heating wires that heat the boats 3 and 4, and the boat 3 and the heating wire 5 are connected to one of the evaporation sources A. The boat 4 and the heating wire 6 constitute the other evaporation source B, and the one evaporation source A heats and evaporates the tin contained in the boat 3. let me,
The other evaporation source B described above heats and evaporates molybdenum contained in the boat 4 thereof.
７は、前記した基板１と２つの蒸発源Ａ，Ｂと
の間に出入自在になされているシヤツタ板であ
る。そして前記した各構成部分の全体は図示され
ていない容器内に収納され、前記した容器内に形
成される真空雰囲気中で、基板１に対する次のよ
うな成膜動作が行なわれるようになされている。 Reference numeral 7 denotes a shutter plate that can be freely moved in and out between the substrate 1 and the two evaporation sources A and B. The entirety of each of the above-described components is housed in a container (not shown), and the following film-forming operation is performed on the substrate 1 in a vacuum atmosphere formed in the container. .
すなわち、基板１を回転軸２に固着し、また、
一方の蒸発源Ａにおけるボート３中に蒸発材料と
される錫を収容し、また、前記した他方の蒸発源
Ｂにおけるボート４中に蒸発材料とされるモリブ
デンを収容してから、容器内の排気を行なつて容
器内が必要な真空度の真空雰囲気になるようにす
る。 That is, the substrate 1 is fixed to the rotating shaft 2, and
Tin, which is used as an evaporation material, is stored in the boat 3 of one evaporation source A, and molybdenum, which is used as an evaporation material, is stored in the boat 4 of the other evaporation source B, and then the inside of the container is exhausted. to create a vacuum atmosphere with the required degree of vacuum inside the container.
次に、各蒸発源Ａ，Ｂと基板１との間にシヤツ
タ板７を挿入し、また、基板１を所定の回転数で
高速回転させ、さらに各蒸発源Ａ，Ｂにおける各
電熱線５，６に対して、それぞれ所定の加熱用電
圧を供給して、蒸発源Ａのボート３内に収容され
ている錫と、蒸発源Ｂのボート４内に収容されて
いるモリブデンとをそれぞれ溶融させる。 Next, a shutter plate 7 is inserted between each evaporation source A, B and the substrate 1, and the substrate 1 is rotated at a high speed at a predetermined number of rotations. A predetermined heating voltage is supplied to each of the evaporation source A and the molybdenum contained in the boat 3 of the evaporation source A and the molybdenum contained in the boat 4 of the evaporation source B, respectively.
蒸発源Ａのボート３内に収容されている錫の温
度と、蒸発源Ｂのボート４内に収容されているモ
リブデンの温度と、基板１の回転数とを制御し
て、基板１の表面に対して所定の組成の錫−モリ
ブデン合金薄膜、すなわち錫が50原子％乃至90原
子％で残部がモリブデンである如き組成の錫−モ
リブデン合金薄膜が形成されるようにする。 By controlling the temperature of tin housed in the boat 3 of evaporation source A, the temperature of molybdenum housed in the boat 4 of evaporation source B, and the rotation speed of the substrate 1, On the other hand, a tin-molybdenum alloy thin film having a predetermined composition, that is, a tin-molybdenum alloy thin film having a composition in which tin is 50 atomic % to 90 atomic % and the remainder is molybdenum is formed.
また、基板１の表面に対して蒸発物質による真
空蒸着を行なう時間長は、基板１の表面に錫が50
原子％乃至90原子％で残部がモリブデンであるよ
うな組成の錫−モリブデン合金の薄膜が所定の厚
さ、例えば500〜1000オングストローム程度の厚
さに付着形成されるような時間値に設定されるの
であり、それにしたがつてシヤツタ板７に対する
開閉制御が行なわれる。 Further, the time length for performing the vacuum evaporation using the evaporation substance on the surface of the substrate 1 is such that the amount of tin on the surface of the substrate 1 is 50%.
A time value is set such that a thin film of a tin-molybdenum alloy having a composition of atomic percent to 90 atom percent and the balance being molybdenum is deposited and formed to a predetermined thickness, for example, about 500 to 1000 angstroms. Accordingly, the shutter plate 7 is controlled to open and close.
前記したような二元蒸着法の適用により、基板
１の表面に錫が50原子％乃至90原子％で残部がモ
リブデンであるような組成の錫−モリブデン合金
が所定の厚さの薄膜の記録層として付着形成され
た後に、基板１の回転を停止するとともに容器中
に大気を導入し、次いで、容器中から表面に記録
層が形成された状態の基板１を取出す。 By applying the above-mentioned binary vapor deposition method, a thin film recording layer of a predetermined thickness is formed on the surface of the substrate 1 using a tin-molybdenum alloy having a composition of 50 atomic % to 90 atomic % tin and the balance being molybdenum. After the recording layer has been deposited, the rotation of the substrate 1 is stopped and air is introduced into the container, and then the substrate 1 with the recording layer formed on its surface is taken out from the container.
基板１の表面に形成された記録層の表面に保護
層を形成することが必要な場合には、記録層の表
面に適当な合成樹脂の薄膜による保護層を被着さ
せる。前記した合成樹脂の薄膜による保護層の被
着は、図示されていない蒸発源から適当な合成樹
脂材料を蒸発させて行なつてもよい。 If it is necessary to form a protective layer on the surface of the recording layer formed on the surface of the substrate 1, a protective layer made of a thin film of a suitable synthetic resin is applied to the surface of the recording layer. The protective layer may be applied with a thin film of synthetic resin as described above by evaporating a suitable synthetic resin material from an evaporation source (not shown).
基板１の表面に対して錫が50原子％乃至90原子
％で残部がであるような組成の錫−モリブデン合
金を所定の厚さの薄膜の記録層として付着形成さ
せる手段としては、前記したような二元蒸着法の
適用の他に、スパツタリング法、その他の適当な
成膜手段が採用されてもよいことは勿論である
が、基板１に対する成膜手段としてスパツタリン
グ法が採用された場合には、基板１の回転速度
と、モリブデンのターゲツトに射突させるイオン
（例えばアルゴンイオン）のエネルギと、錫のタ
ーゲツトに射突させるイオン（例えばアルゴンイ
オン）のエネルギと、スパツタリングが行なわれ
るべき時間長などを適当に設定することによつ
て、基板１の表面に錫が50原子％乃至90原子％で
残部がモリブデンであるような組成の錫−モリブ
デン合金を所定の厚さの薄膜の記録層として形成
させることができる。また、スパツタリング法の
適用による成膜に際しては、錫とモリブデンとの
スパツタリングレートを考慮した組成の錫−モリ
ブデン合金による１個のターゲツトを用いて成膜
が行なわれるようにしてもよい。 As a means for depositing a tin-molybdenum alloy having a composition of 50 atomic % to 90 atomic % tin and the balance on the surface of the substrate 1 as a thin film recording layer of a predetermined thickness, the above-mentioned method is used. It goes without saying that in addition to the application of the binary vapor deposition method, a sputtering method or other suitable film forming method may be employed; , the rotational speed of the substrate 1, the energy of the ions (for example, argon ions) to be bombarded with the molybdenum target, the energy of the ions (for example, argon ions) to be bombarded with the tin target, the length of time for sputtering, etc. By setting appropriately, a tin-molybdenum alloy having a composition of 50 atomic % to 90 atomic % tin and the remainder molybdenum is formed on the surface of the substrate 1 as a thin film recording layer of a predetermined thickness. can be done. Furthermore, when forming a film by applying the sputtering method, the film may be formed using one target made of a tin-molybdenum alloy having a composition that takes into account the sputtering rate of tin and molybdenum.
さて、プラスチツク製の円盤状の基板の表面
に、錫が10原子％乃至90原子％で残部がモリブデ
ンであるような組成範囲内にある色々な組成の錫
−モリブデン合金を約500オングストロームの厚
さの薄膜として被着させたものを試料として用意
し、それぞれ組成を異にしている錫−モリブデン
合金薄膜が付着されている各試料を回転させた状
態にして、前記の各試料毎の錫−モリブデン合金
薄膜が、直径が約1μｍに集束されたレーザ光束
（波長が8300オングストロームの半導体レーザか
らのレーザ光）により断続的に照射している状態
にし、前記の試料におけるレーザ光束で照射され
た部分と照射されなかつた部分とを光学顕微鏡に
より観察したところ、試料の錫−モリブデン合金
薄膜におけるレーザ光束の照射により相変化を起
こしている部分は、その他の部分に比べて高い反
射率を有するために明瞭なコントラスト比を有す
る明るい状態の部分として認識できた。第２図は
前記のように試料を回転させ、それを時間軸上で
第２図のａのように断続するレーザ光束で照射し
たときに錫−モリブデン合金薄膜に生じる記録ド
ツト｛第２図のｂ｝と、前記の錫−モリブデン合
金薄膜の記録ドツトの部分とその他の部分とにお
ける反射率の状態｛第２図のｂ｝とを示してい
る。 Now, on the surface of a plastic disc-shaped substrate, tin-molybdenum alloys of various compositions ranging from 10 atomic % to 90 atomic % tin and the remainder molybdenum are coated to a thickness of about 500 angstroms. The tin-molybdenum alloy thin films deposited on each sample were prepared as samples, and the tin-molybdenum alloy thin films of each sample were rotated. The alloy thin film was intermittently irradiated with a laser beam focused to a diameter of about 1 μm (laser beam from a semiconductor laser with a wavelength of 8300 angstroms), and the part of the sample irradiated with the laser beam was When observing the non-irradiated portions using an optical microscope, it was found that the portions of the tin-molybdenum alloy thin film of the sample that underwent a phase change due to irradiation with the laser beam were clearly visible because they had a higher reflectance than other portions. It was recognized as a bright area with a high contrast ratio. Figure 2 shows the recording dots generated on the tin-molybdenum alloy thin film when the sample is rotated as described above and irradiated with a laser beam that is intermittent on the time axis as shown in Figure 2 a. b} and the state of reflectance {b in FIG. 2} in the recording dot portion and other portions of the tin-molybdenum alloy thin film.
そして、前記のようにして部分的に相変化を生
じさせた錫−モリブデン合金の薄膜を走査電子顕
微鏡によつて観察したところ、記録ドツトは全く
認められなかつたが、このことは前記のようにレ
ーザ光のスポツトの照射によつて錫−モリブデン
合金の薄膜に生じた光の反射率等の光学的変化
は、レーザ光の照射によつて錫−モリブデン合金
の薄膜の表面に凹凸が生じることによつて起きた
のではないことを示している。 When the thin film of the tin-molybdenum alloy, which had undergone a partial phase change as described above, was observed using a scanning electron microscope, no recorded dots were observed. Optical changes such as light reflectance that occur in the thin film of tin-molybdenum alloy due to spot irradiation with laser light are caused by unevenness on the surface of the thin film of tin-molybdenum alloy due to irradiation with laser light. This shows that it did not happen by accident.
次に、前記のようにしてレーザ光スポツトの照
射により相変化を生じさせた錫−モリブデン合金
の薄膜をEPMA（Electron Probe Micro
Analysis）によつて、それの記録部分と非記録
部分とのそれぞれの部分における酸素量と窒素量
とを測定したが、両者間においての差は認められ
なかつた。このことは前記のようにレーザ光のス
ポツトの照射によつて錫−モリブデン合金の薄膜
に生じた光の反射率、透過率の変化と、色調の変
化などは、レーザ光の照射によつて錫−モリブデ
ン合金の薄膜に形成された記録部分が、レーザ光
の照射による加熱によつて非記録部分とは異なる
物質に変化したことによつて生じたものではない
ことを示している。 Next, a thin film of tin-molybdenum alloy, which had undergone a phase change by irradiation with a laser beam spot as described above, was coated with an EPMA (Electron Probe Microwave).
The amount of oxygen and nitrogen in each of the recorded and non-recorded portions was measured using a method (Analysis), but no difference was observed between the two. As mentioned above, changes in light reflectance, transmittance, and color tone that occur in the thin film of tin-molybdenum alloy due to spot irradiation with laser light are caused by tin-molybdenum alloy thin film irradiation with laser light. - This indicates that the recorded portion formed on the molybdenum alloy thin film was not caused by being changed into a different substance from the non-recorded portion due to heating by laser beam irradiation.
以上の実験結果から考えると、レーザ光のスポ
ツトの照射によつて錫−モリブデン合金の薄膜に
生じた光学的特性の変化は、レーザ光の照射によ
つて錫−モリブデン合金の薄膜に与えられた熱エ
ネルギにより、錫−モリブデン合金の薄膜の構成
物質に原子配列の変化が生じ、それによつて錫−
モリブデン合金の薄膜の光学的特性が記録部分と
非記録部分とにおいて変化しているものと推論さ
れる。 Considering the above experimental results, the change in optical properties caused in the tin-molybdenum alloy thin film by spot irradiation with laser light is due to the change in the optical properties caused to the tin-molybdenum alloy thin film by laser light irradiation. Thermal energy causes a change in the atomic arrangement of the constituent materials of the tin-molybdenum alloy thin film, thereby causing tin-molybdenum
It is inferred that the optical properties of the molybdenum alloy thin film change between the recording portion and the non-recording portion.
第３図は錫−モリブデン合金中の錫の含有率
（原子％）の変化に対する錫−モリブデン合金薄
膜のレーザ光感度（記録媒体に相変化を起こさせ
ることができる強度範囲内のレーザ光強度であつ
て、記録媒体にその強度のレーザ光が照射された
部分からの再生信号中における２次高調波歪が極
小になされる如きレーザ光強度）の変化を示す図
であるが、第３図示の測定結果は、次の様な条件
の下で得られたものである。 Figure 3 shows the laser light sensitivity of the tin-molybdenum alloy thin film to changes in the tin content (atomic %) in the tin-molybdenum alloy (laser light intensity within the intensity range that can cause a phase change in the recording medium). 3 is a diagram illustrating a change in laser light intensity such that second harmonic distortion is minimized in a reproduced signal from a portion of the recording medium irradiated with laser light of that intensity; The measurement results were obtained under the following conditions.
すなわち、合成樹脂製の円盤状の基板（アクリ
ル樹脂製の円盤状の基板）の表面に、錫の含有率
が10原子％〜90原子％の範囲で残部がモリブデン
であるような組成の錫−モリブデン合金を約500
オングストロームの厚さの薄膜として被着させて
なる情報記録媒体円盤を、それの中心を回転軸に
固着して毎分900回転させ、前記した情報記録円
盤における中心から50mmの径の位置を、周波数が
500KHzの信号によつて強度変調されている波長
が8300オングストロームレーザ光の径が約１ミク
ロンのスポツトによつて照射し、錫−モリブデン
合金の薄膜に500KHzの信号を相変化によつて記
録するようにした場合のものであり、第３図示の
測定結果を得るための実験は、錫の含有率が10原
子％〜90原子％の範囲で残部がモリブデンである
ような組成の錫−モリブデン合金を約500オング
ストロームの厚さの薄膜として被着させてなる情
報記録媒体円盤として、10原子％〜90原子％の範
囲で錫の含有率をそれぞれ異にしている如き多数
の情報記録媒体円盤を用いて行なわれたものであ
る。 That is, on the surface of a disk-shaped substrate made of synthetic resin (a disk-shaped substrate made of acrylic resin), a tin composition having a tin content in the range of 10 atomic % to 90 atomic %, with the balance being molybdenum is applied. About 500 molybdenum alloys
An information recording medium disk formed by coating a thin film with a thickness of angstroms is fixed at its center to a rotating shaft and rotated at a rate of 900 per minute. but
A laser beam with a wavelength of 8300 angstroms whose intensity is modulated by a 500 KHz signal is irradiated with a spot of about 1 micron in diameter, and a 500 KHz signal is recorded on a thin film of tin-molybdenum alloy by phase change. The experiment to obtain the measurement results shown in Figure 3 was conducted using a tin-molybdenum alloy with a composition in which the tin content ranged from 10 atomic % to 90 atomic %, with the remainder being molybdenum. A large number of information recording medium disks each having a different tin content in the range of 10 atomic % to 90 atomic % are used as information recording medium disks deposited as a thin film with a thickness of about 500 angstroms. It was done.
第３図に示されている錫−モリブデン合金中の
錫の含有率（原子％）の変化に対する錫−モリブ
デン合金薄膜のレーザ光感度の変化特性を見る
と、錫−モリブデン合金薄膜におけるレーザ光感
度は錫−モリブデン合金中の錫の含有率（原子
％）が50原子％〜90原子％という広い範囲にわた
り略々一定の状態に保たれているというような特
性を示している。 Looking at the change characteristics of the laser light sensitivity of the tin-molybdenum alloy thin film with respect to the change in tin content (atomic %) in the tin-molybdenum alloy shown in Figure 3, the laser light sensitivity of the tin-molybdenum alloy thin film is shown. shows the characteristic that the tin content (atomic %) in the tin-molybdenum alloy is kept approximately constant over a wide range of 50 atomic % to 90 atomic %.
このように、錫−モリブデン合金では錫の含有
率が50原子％〜90原子％というように広い範囲で
変動しても、錫−モリブデン合金薄膜のレーザ光
感度が略々一定に保たれる（錫が50原子％〜90原
子％という広い組成範囲にわたつて錫−モリブデ
ン合金薄膜のレーザ光感度が略々一定に保たれ
る）から、記録媒体の製作時における記録層の構
成物質の組成のばらつきの許容度が広く、したが
つて、記録媒体の大量生産が容易になる。 In this way, even if the tin content in a tin-molybdenum alloy varies over a wide range of 50 atomic % to 90 atomic %, the laser light sensitivity of the tin-molybdenum alloy thin film remains approximately constant ( The laser light sensitivity of the tin-molybdenum alloy thin film remains approximately constant over a wide composition range of 50 at% to 90 at% tin), so it is clear that the composition of the constituent materials of the recording layer during the production of the recording medium is The tolerance for variations is wide, thus facilitating mass production of recording media.
また、前記のように記録媒体の製作時における
記録層の構成物質の組成のばらつきの許容度が広
いことから、錫及びモリブデンの溶融固化物によ
る錫−モリブデン合金のターゲツトを使用した連
続インラインスパツタリングによる情報記録媒円
盤の製作も容易に行なわれ得るのである。なお、
錫−モリブデン合金による記録層に対する情報の
記録は、レーザ光のスポツトの使用による温度上
昇以外の方法による記録層の温度上昇によつても
行なわれ得ることはいうまでもない。 In addition, as mentioned above, there is a wide tolerance for variations in the composition of the constituent materials of the recording layer during the production of the recording medium, so continuous in-line sputtering using a tin-molybdenum alloy target made from a molten solidified product of tin and molybdenum has been developed. It is also possible to easily manufacture an information recording medium disk using a ring. In addition,
It goes without saying that the recording of information on the recording layer made of a tin-molybdenum alloy can be carried out by raising the temperature of the recording layer by a method other than raising the temperature by using a spot of laser light.
（効果）
以上、詳細に説明したところから明らかなよう
に、本発明の錫が50原子％乃至90原子％であつて
残部がモリブデンである記録媒体用錫−モリブデ
ン合金では、錫の含有率が50原子％〜90原子％と
いうように広い範囲で変動しても、錫−モリブデ
ン合金薄膜のレーザ光感度が略々一定に保たれる
（錫が50原子％〜90原子％という広い組成範囲に
わたつて錫−モリブデン合金薄膜のレーザ光感度
が略々一定に保たれる）ものであり、これは従来
のカルコゲナイト系や低級酸化物系の相変化型の
記録媒体では到底得ることができなかつたもので
あり、本発明の記録媒体用錫−モリブデン合金を
用いた記録媒体は、従来の相変化型の記録媒体に
比べて大量生産が容易であり、本発明により既述
した従来の欠点はすべて良好に解消される。(Effects) As is clear from the above detailed explanation, in the tin-molybdenum alloy for recording media of the present invention in which tin is 50 atomic % to 90 atomic % and the balance is molybdenum, the tin content is low. The laser light sensitivity of the tin-molybdenum alloy thin film remains almost constant even when the composition varies over a wide range of 50 to 90 atom%. The laser sensitivity of the tin-molybdenum alloy thin film remains approximately constant over time), something that could never be achieved with conventional chalcogenite-based or lower oxide-based phase change recording media. The recording medium using the tin-molybdenum alloy for recording media of the present invention can be mass-produced more easily than the conventional phase change type recording medium, and the present invention eliminates all the conventional drawbacks mentioned above. It is resolved well.
第１図は成膜装置の一例の概略構成を示す斜視
図、第２図は記録媒体用錫−モリブデン合金薄膜
を照射するレーザ光ビームの断続の状態と、錫−
モリブデン合金薄膜の記録ドツトの状態と、光の
反射率の変化の状態との関係を示す図、第３図は
錫−モリブデン合金薄膜の錫の含有率とレーザ光
感度との関係を示す図である。
１……基板、２……回転軸、３，４……ボー
ト、５，６……電熱線、７……シヤツタ板、Ａ，
Ｂ……蒸発源。
Fig. 1 is a perspective view showing a schematic configuration of an example of a film forming apparatus, and Fig. 2 shows the intermittent state of a laser beam that irradiates a tin-molybdenum alloy thin film for recording media, and
Figure 3 is a diagram showing the relationship between the state of recording dots in a molybdenum alloy thin film and the change in light reflectance. Figure 3 is a diagram showing the relationship between the tin content of a tin-molybdenum alloy thin film and laser light sensitivity. be. 1... Board, 2... Rotating shaft, 3, 4... Boat, 5, 6... Heating wire, 7... Shutter plate, A,
B... Evaporation source.
Claims (1)
リブデンである記録媒体用錫−モリブデン合金。1. A tin-molybdenum alloy for recording media, containing 50 atomic % to 90 atomic % tin and the balance being molybdenum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60023940A JPS61183429A (en) | 1985-02-09 | 1985-02-09 | Tin-molybdenum alloy for recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60023940A JPS61183429A (en) | 1985-02-09 | 1985-02-09 | Tin-molybdenum alloy for recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61183429A JPS61183429A (en) | 1986-08-16 |
| JPH0119453B2 true JPH0119453B2 (en) | 1989-04-11 |
Family
ID=12124526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60023940A Granted JPS61183429A (en) | 1985-02-09 | 1985-02-09 | Tin-molybdenum alloy for recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61183429A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090046566A1 (en) * | 2005-10-18 | 2009-02-19 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) | Recording layer for optical information recording medium, optical information recording medium, and sputtering target for optical information recording medium |
-
1985
- 1985-02-09 JP JP60023940A patent/JPS61183429A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61183429A (en) | 1986-08-16 |
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