JPH01196558A - Humidity sensor - Google Patents
Humidity sensorInfo
- Publication number
- JPH01196558A JPH01196558A JP2165788A JP2165788A JPH01196558A JP H01196558 A JPH01196558 A JP H01196558A JP 2165788 A JP2165788 A JP 2165788A JP 2165788 A JP2165788 A JP 2165788A JP H01196558 A JPH01196558 A JP H01196558A
- Authority
- JP
- Japan
- Prior art keywords
- moisture
- thin film
- sensitive
- sputtering
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010408 film Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000919 ceramic Substances 0.000 claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 11
- 239000011810 insulating material Substances 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000004043 responsiveness Effects 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 239000012298 atmosphere Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012300 argon atmosphere Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、絶縁材料のインピーダンスが水分子の吸着に
よって変化することを利用して湿度を検出する湿度セン
サに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a humidity sensor that detects humidity by utilizing the fact that the impedance of an insulating material changes due to adsorption of water molecules.
[従来の技術]
現在、実用化されている湿度センサは、感湿材料として
主に吸湿性高分子や、金属酸化物等の焼成により作成し
た多孔質セラミックス用いられ、水分子の吸着による静
電容量の変化及びインピーダンスの変化を利用して湿度
の検出を行っている。先ず、吸湿性高分子を用いて静電
容量の変化を検出する湿度センサは、吸湿性高分子の温
度係数が極めて小さく、また応答性も速くヒステリシス
も3%RH以内と小さいので、高精度な湿度計測が可能
である。しかし、吸湿性高分子は有機溶剤を含む雰囲気
中や高温雰囲気中では劣化を生ずるために、使用雰囲気
の制約を受けるという欠点がある。[Conventional technology] Humidity sensors currently in practical use mainly use hygroscopic polymers or porous ceramics made by firing metal oxides as moisture-sensitive materials, and they absorb static electricity due to adsorption of water molecules. Humidity is detected using changes in capacitance and impedance. First, humidity sensors that use hygroscopic polymers to detect changes in capacitance are highly accurate because the hygroscopic polymers have extremely small temperature coefficients, are fast in response, and have a small hysteresis of less than 3% RH. Humidity measurement is possible. However, hygroscopic polymers deteriorate in atmospheres containing organic solvents or in high-temperature atmospheres, so they have the disadvantage of being subject to restrictions on the atmosphere in which they are used.
一方、多孔質セラミックスを用いてインピーダンスの変
化を検出する方法による湿度センサは、耐環境性に優れ
特に制約を受けることが少ないので、広範囲に渡って使
用可能である。しかし、多孔質セラミックスを用いた湿
度センサは応答性、再現性、ヒステリシス等の測定精度
の点で吸湿性高分子を用いた湿度センサよりも劣るとい
う欠点がある。On the other hand, a humidity sensor based on a method of detecting changes in impedance using porous ceramics has excellent environmental resistance and is not subject to any particular restrictions, so it can be used over a wide range of applications. However, humidity sensors using porous ceramics have the disadvantage that they are inferior to humidity sensors using hygroscopic polymers in terms of measurement accuracy such as response, reproducibility, and hysteresis.
そこで、上述の欠点を補うために感湿材料にとして熱的
化学的に安定な高絶縁材料を用いることが考えられてい
るが、通常ではその抵抗値は絶縁抵抗計を用いなければ
測定できないほど高抵抗である。従って、第8図、第9
図に示すような従来の湿度センサの構造では、現実に湿
度の検出を行うことは不可能である。Therefore, in order to compensate for the above-mentioned drawbacks, it has been considered to use a thermally and chemically stable highly insulating material as a moisture-sensitive material, but normally the resistance value is so high that it cannot be measured without using an insulation resistance meter. It has high resistance. Therefore, Figures 8 and 9
With the structure of a conventional humidity sensor as shown in the figure, it is impossible to actually detect humidity.
例えば、第8図はバルクタイプのものであり、感湿材料
1は主に金属酸化物の多孔質焼結体であり、2枚の電極
板2の間に挟み込まれている。感湿材料1の厚さdはm
m単位、電極板2の面積Sはm m 2〜cm2単位で
ある。この感湿材料1に前述の高絶縁材料を用いた場合
に、機械的強度が得られる範囲で感湿材料1の厚さdを
限界まで薄くして電極板2の面積Sを大きくしても、比
抵抗が大き過ぎてインピーダンスは測定可使な値とはな
らない。For example, FIG. 8 shows a bulk type material, in which the moisture sensitive material 1 is mainly a porous sintered body of metal oxide, and is sandwiched between two electrode plates 2. The thickness d of the moisture sensitive material 1 is m
The area S of the electrode plate 2 is in units of m m2 to cm2. When the above-mentioned highly insulating material is used as the moisture-sensitive material 1, the area S of the electrode plate 2 may be increased by reducing the thickness d of the moisture-sensitive material 1 to the limit as long as mechanical strength is obtained. , the resistivity is so large that the impedance cannot be measured.
一方、第9図は厚膜印刷を用いた方法であり、絶縁基板
3上に電極4a、4bが設けられていて、これらの上部
は感湿材料5により覆われている。この場合は電極4a
と4bの間隔d゛を小さくすれば抵抗値は低下するが、
実用上0.2mm程度が限界であるため゛、感湿材料5
に高絶縁材料を用いるとインピーダンスの変化を測定す
ることは不可能である。On the other hand, FIG. 9 shows a method using thick film printing, in which electrodes 4a and 4b are provided on an insulating substrate 3, and the upper portions of these are covered with a moisture-sensitive material 5. In this case, electrode 4a
If the distance d between and 4b is made smaller, the resistance value will decrease, but
Since the practical limit is about 0.2 mm, the moisture-sensitive material 5
It is impossible to measure changes in impedance when using highly insulating materials.
[発明の目的]
本発明の目的は、前述の従来例に係る問題点を除去し、
スパッタリング法によって感湿薄膜を形成し、温度や雰
囲気等の耐環境性に優れた高精度な湿度センサを提供す
ることにある。[Object of the Invention] The object of the present invention is to eliminate the problems related to the above-mentioned conventional example,
The purpose of the present invention is to form a moisture-sensitive thin film using a sputtering method to provide a highly accurate humidity sensor that has excellent resistance to environments such as temperature and atmosphere.
[発明の概要]
上述の目的を達成するための本発明の要旨は、絶縁性基
板上に形成した下部電極と、該下部電極の上部に絶縁材
料をスパッタリングにより形成した感湿薄膜と、該感湿
薄膜の上部に形成した水分透過性の上部電極とから構成
した湿度センサであって、前記下部電極は厚膜印刷によ
って形成した金属膜又はスパッタリング或いは厚膜印刷
によって形成した導電性セラミックス膜から成ることを
特徴とする湿度センサである。[Summary of the Invention] The gist of the present invention for achieving the above-mentioned object is to provide a lower electrode formed on an insulating substrate, a moisture-sensitive thin film formed by sputtering an insulating material on the upper part of the lower electrode, and a moisture-sensitive thin film formed on the lower electrode by sputtering. A humidity sensor comprising a moisture-permeable upper electrode formed on top of a wet thin film, the lower electrode comprising a metal film formed by thick film printing or a conductive ceramic film formed by sputtering or thick film printing. This is a humidity sensor characterized by the following.
[発明の実施例] 本発明を図示の実施例に基づいて詳細に説明する。[Embodiments of the invention] The present invention will be explained in detail based on illustrated embodiments.
第1図は本発明に係る湿度センサの第1の実施例を示し
、(a)は断面図、(b)はその電気的な等価回路図で
ある。電気絶縁性を有する基板10上には厚膜印刷によ
って作成された金属膜か、スパッタリングや厚膜印刷に
よって作成した導電性セラミックスから成る例えば厚さ
10pmの下部電極11が設けられ、その上部には5i
02、S i3 N4 、AlO2、Z r02 、M
gO1Ti02.或いはこれらを含む混合物質等の絶縁
材料から成る厚さ数gmの感湿薄膜12がスパー2タリ
ング法により作成されている。感湿薄膜12の上部には
、真空蒸着等によって水蒸気透過性の厚さ数1000人
の上部電極13が設けられていて、感湿薄fi12は上
下部を両電極11.13によって挟まれた構造になって
いる。FIG. 1 shows a first embodiment of a humidity sensor according to the present invention, in which (a) is a sectional view and (b) is an electrical equivalent circuit diagram thereof. A lower electrode 11 with a thickness of 10 pm, for example, made of a metal film created by thick film printing or a conductive ceramic created by sputtering or thick film printing is provided on the electrically insulating substrate 10, and on top of the lower electrode 11 is provided. 5i
02, S i3 N4 , AlO2, Z r02 , M
gO1Ti02. Alternatively, a moisture-sensitive thin film 12 made of an insulating material such as a mixed substance containing these materials and having a thickness of several grams is prepared by a sparging method. On the top of the moisture-sensitive thin film 12, a water vapor permeable upper electrode 13 with a thickness of several thousand layers is provided by vacuum deposition or the like, and the moisture-sensitive thin film 12 has a structure in which the upper and lower parts are sandwiched between the two electrodes 11 and 13. It has become.
スパッタリング法は基本的には低真空のアルゴン雰囲気
中で放電を行うと、陰極(カソード)側に設置された物
質(ターゲット)の原子又は原子群がアルゴンイオンの
衝突によって外部に飛び出し、陽極(アノード)側に設
置された基板10上に付着することを利用している。従
って、膜作成物質を陰極側に、膜作成用基板10を陽極
側に設置し、10(〜l O’ Tartのアルゴン雰
囲気中で放電を行えば膜作成用基板10上に薄膜を作成
することができる。膜厚は真空度・蒸気圧・電源出力等
の物理的パラメータのみで制御でき、また基板10上の
下部電極11と薄膜との密着性も通常の蒸着よりも優れ
ていて、更には膜の組成も膜作成物質と同一のものが得
られる。The sputtering method basically involves performing a discharge in a low-vacuum argon atmosphere, and atoms or atomic groups of a substance (target) placed on the cathode side fly out to the outside due to collisions with argon ions. ) side is attached to the substrate 10. Therefore, if the film forming substance is placed on the cathode side and the film forming substrate 10 is placed on the anode side, and discharge is performed in an argon atmosphere of 10 (~l O'Tart), a thin film can be formed on the film forming substrate 10. The film thickness can be controlled only by physical parameters such as the degree of vacuum, vapor pressure, and power output, and the adhesion between the thin film and the lower electrode 11 on the substrate 10 is also superior to that of normal vapor deposition. The composition of the membrane can also be the same as that of the membrane-forming material.
スパッタリング法には多くのバリエーションがあるが、
本実施例のように5i02やSi3N。There are many variations of sputtering methods, but
5i02 or Si3N as in this example.
等の絶縁膜を作成する場合には高周波電源を用いたRF
スパッタリングや、アルゴンの他に酸素や窒素を雰囲気
として注入し、ターゲットとしてシリコン及び金属材料
等を用いて、一種の化学反応により薄膜を作成する反応
性スパッタリングが主に行われている。When creating insulating films such as
Sputtering and reactive sputtering, in which a thin film is created by a type of chemical reaction by injecting oxygen or nitrogen in addition to argon as an atmosphere and using silicon, metal materials, etc. as targets, are mainly performed.
以上のように構成すれば、感湿薄膜12の膜厚は0.1
1−1O1Lの範囲となるので、通常でも十分測定可能
なインピーダンス値となる。これは抵抗値R=p−d/
S(ただし、ρは比抵抗、dは電極間隔、Sは断面積)
となるので、比抵抗ρが大きい物質であっても、断面積
Sが電極間隔dよりも十分大きければ測定可能な抵抗値
となる。With the above configuration, the thickness of the moisture-sensitive thin film 12 is 0.1
Since it is in the range of 1-1O1L, the impedance value is sufficiently measurable even under normal conditions. This is the resistance value R=p-d/
S (where ρ is specific resistance, d is electrode spacing, and S is cross-sectional area)
Therefore, even if the material has a large specific resistance ρ, it will have a measurable resistance value if the cross-sectional area S is sufficiently larger than the electrode spacing d.
感湿薄膜16はスパッタリング法により作成しているの
で膜厚の安定性が高く、量産等に際しても規格の安定し
た高精度なものとなる。また、11は厚膜印刷によって
作成するか、膨張係数の小さい導電性セラミックスを用
いるため、感湿薄II% 12と下部電極11との膨張
係数の一致が得られるので、感湿薄膜12の剥離やクラ
ックの発生が緩和されて耐久性の高いものとなる。Since the moisture-sensitive thin film 16 is formed by sputtering, the film thickness is highly stable, and even when mass-produced, the film can be manufactured with high precision and stable specifications. In addition, since 11 is created by thick film printing or conductive ceramics with a small expansion coefficient are used, the humidity-sensitive thin film 12 and the lower electrode 11 can be matched in expansion coefficient, so that the moisture-sensitive thin film 12 can be peeled off. This reduces the occurrence of cracks and increases durability.
また、感湿薄膜12は膜厚を小さくすることによって、
吸着した水分子の誘電率による容量成分の影響を受け、
そのインピーダンス値は低下する。従って、概念的には
第1図(b)に示すように抵抗RとコンデンサCを並列
に持続した等価回路となっており、そのインピーダンス
値Zは次式のようになる。In addition, by reducing the thickness of the moisture-sensitive thin film 12,
Affected by the capacitance component due to the dielectric constant of the adsorbed water molecules,
Its impedance value decreases. Therefore, conceptually, it is an equivalent circuit in which a resistor R and a capacitor C are connected in parallel as shown in FIG. 1(b), and its impedance value Z is expressed by the following equation.
I Z l = 1/((1/R) 2 +
(ωC)2 ) 4第2図はこの湿度センサの感湿
特性及びヒステリシス特性を示したグラフ図であり、感
湿特性は相対湿度で30%〜80%RHの間で約2桁の
インピーダンス変化が得られ、インピーダンスの対数を
取ればほぼ直線的な特性を得ることが可能である。一方
、ヒステリシスは約2%RH程度であり再現性が良好で
あることが認められる。I Z l = 1/((1/R) 2 +
(ωC) 2) 4 Figure 2 is a graph showing the humidity sensitivity characteristics and hysteresis characteristics of this humidity sensor. is obtained, and by taking the logarithm of the impedance, it is possible to obtain approximately linear characteristics. On the other hand, the hysteresis was approximately 2% RH, indicating good reproducibility.
第3図は応答性を示しており、90%応答までに約8〜
9秒で到達しており・、従来の多孔質セラミックスを用
いた湿度センサに比べて応答性が向上している。Figure 3 shows the response, and it takes about 8 to 90% response.
It takes 9 seconds to reach this point and has improved responsiveness compared to conventional humidity sensors using porous ceramics.
なお、これらのデータは絶縁性を有する感湿薄膜12と
して5i02を使用しているが、Si3N4.AN□0
3.MgO1Zr02、TiO2,或いはこれらを含む
混合物質についても同様な特性を得ることができる。ま
た、下部電極11としては厚膜印刷により作成したAu
−Pt、Pt、Au、Au−Pd、Ag−Pdや、Ru
O2等の導電性セラミックスを用いることが適当である
。Note that these data use 5i02 as the insulating moisture-sensitive thin film 12, but Si3N4. AN□0
3. Similar characteristics can be obtained with MgO1Zr02, TiO2, or a mixture containing these. In addition, the lower electrode 11 is made of Au made by thick film printing.
-Pt, Pt, Au, Au-Pd, Ag-Pd, Ru
It is appropriate to use conductive ceramics such as O2.
第4図は第2の実施例を示し、(a)は断面図、(b)
は平面図である。基本的に第1図(a)と同様であり、
電気絶縁性を有する基板14上に金属膜や導電性セラミ
ックスから成る下部電極15、スパッタリング法により
作成した絶縁材料による感湿薄膜16、水蒸気透過性の
上部電極17が順次に積層されている。しかし、実用上
は外部との信号送受を行うために、上下電極15.17
にはそれぞれ接続端部15s、17sが設けられていて
、図示しない導線がそれぞれ接続されている。FIG. 4 shows the second embodiment, (a) is a sectional view, (b)
is a plan view. Basically the same as FIG. 1(a),
A lower electrode 15 made of a metal film or conductive ceramic, a moisture-sensitive thin film 16 made of an insulating material made by sputtering, and an upper electrode 17 permeable to water vapor are sequentially laminated on an electrically insulating substrate 14. However, in practical use, the upper and lower electrodes 15 and 17 are used for signal transmission and reception with the outside.
are provided with connection ends 15s and 17s, respectively, to which conducting wires (not shown) are connected, respectively.
なお、第4図(b)においては見易さのために、上下電
極15.17はずらして示しであるが、上下電極15.
17は接続端部15s、17sを除いて同じ形状とし、
同位置に重なるように配置することが好適であることは
勿論である。Note that in FIG. 4(b), the upper and lower electrodes 15.17 are shown offset for ease of viewing, but the upper and lower electrodes 15.17 are shown offset.
17 has the same shape except for the connecting ends 15s and 17s,
Of course, it is preferable to arrange them so that they overlap at the same position.
ところで、第1図、第4図において、感湿薄膜12.1
6は水分子の吸着が十分少じるように多孔質膜となって
いるため、感湿薄膜12.16上に作成する上部電極1
3.17を適度に厚くする必要があるが、水蒸気の透過
性が疎外され応答性が悪化する。従って、上部電極13
.17からの信号の取り出しのための電極の引き廻しは
できるだけ少なくする必要がある。第5図はそのことを
考慮に入れ・た第3の実施例を示し、(a)は模式的構
造図、(b)はその等価回路図である。この実施例は基
本的には第1図(a)と同様の構造であるが、下部電極
11をlla及びllbのように2個に分割し、外部と
の信号の送受信を全て下部電極11で行っていて、理論
的には第5図(b)に示すように抵抗Ra、 Rb及び
コンデンサCa、 Cbの並列回路を2個直列に接続し
た状態となる。By the way, in FIGS. 1 and 4, the moisture-sensitive thin film 12.1
Since 6 is a porous membrane so that adsorption of water molecules is sufficiently small, the upper electrode 1 formed on the moisture-sensitive thin film 12.16
3.17 needs to be made appropriately thick, but water vapor permeability is reduced and responsiveness deteriorates. Therefore, the upper electrode 13
.. It is necessary to minimize the number of electrodes to be routed for extracting signals from 17. FIG. 5 shows a third embodiment that takes this into consideration, where (a) is a schematic structural diagram and (b) is its equivalent circuit diagram. This embodiment basically has the same structure as that in FIG. 1(a), but the lower electrode 11 is divided into two parts, lla and llb, and all signals are transmitted and received from the outside by the lower electrode 11. Theoretically, two parallel circuits of resistors Ra, Rb and capacitors Ca, Cb are connected in series, as shown in FIG. 5(b).
第6図は第4の実施例の平面図であり、第4図の実施例
において下部電極15を15a及び15bの2個に分割
して、その接続端部15s、15S’ にはそれぞれ信
号の送受信のための導線を取り付けた構造となっている
。従って、概念的には第7図に示すように、外部との信
号の送受信は2個の下部電極15a、15bを介して行
われることになる。FIG. 6 is a plan view of the fourth embodiment. In the embodiment of FIG. 4, the lower electrode 15 is divided into two parts 15a and 15b, and the connection ends 15s and 15S' each have a signal input terminal. It has a structure with conductive wires attached for transmission and reception. Therefore, conceptually, as shown in FIG. 7, signals are transmitted and received from the outside via the two lower electrodes 15a and 15b.
また、この湿度センサは薄膜化により温度、圧力、光等
のセンサと同一基板上に作成することも可能となり、多
機能センサに応用できる。Furthermore, by making this humidity sensor thinner, it is possible to create it on the same substrate as sensors for temperature, pressure, light, etc., and it can be applied to multifunctional sensors.
[発明の効果]
以上説明したように本発明に係る湿度センサは、感湿材
料として絶縁材料を用い、スパッタリング法により感湿
材料を薄膜化しているので湿度や雰囲気等の耐環境性に
優れ、かつ応答性が向上するだけでなく膜厚の制御が容
易となり、量産に際しても規格が一定化して信頼性が高
い、更には、下部電極は厚膜印刷によって作成された金
属膜か、導電性セラミックスを用いるので、基板との膨
張係数が合致しているため、感湿膜の剥離やクラックの
発生を抑制することができ耐久性が向上する。[Effects of the Invention] As explained above, the humidity sensor according to the present invention uses an insulating material as the moisture-sensitive material and thins the moisture-sensitive material by sputtering, so it has excellent resistance to environments such as humidity and atmosphere. In addition to improving responsiveness, it also makes it easier to control the film thickness, ensuring uniform standards and high reliability even in mass production.Furthermore, the lower electrode can be made of a metal film created by thick film printing or a conductive ceramic. Since the coefficient of expansion matches that of the substrate, peeling of the moisture sensitive film and occurrence of cracks can be suppressed and durability can be improved.
図面は本発明に係る湿度センサの実施例を示し、第1図
(a)は第1の実施例の断面図、(b)は等価回路図、
第2図はその感湿特性及びヒステリシス特性図、第3図
は応答特性図、第4図(a)は第2の実施例の断面図、
(1))は平面図、第5図(a)は第3の実施例の断面
図、(b)は等側平面図、第6図は第4の実施例の平面
図、第7図は側面図であり、第8図は従来例の構成図、
第9図は従来例の断面図である。
符号10.14は基板、11.15.15a、15bは
下部電極、12.16は感湿薄膜、13.17は上部電
極である。The drawings show an embodiment of the humidity sensor according to the present invention, FIG. 1(a) is a sectional view of the first embodiment, FIG. 1(b) is an equivalent circuit diagram,
FIG. 2 is a moisture sensitivity characteristic and hysteresis characteristic diagram, FIG. 3 is a response characteristic diagram, and FIG. 4(a) is a sectional view of the second embodiment.
(1)) is a plan view, FIG. 5(a) is a sectional view of the third embodiment, (b) is an isolateral plan view, FIG. 6 is a plan view of the fourth embodiment, and FIG. 7 is a plan view of the fourth embodiment. It is a side view, and FIG. 8 is a configuration diagram of a conventional example.
FIG. 9 is a sectional view of a conventional example. Reference numeral 10.14 is a substrate, 11.15.15a and 15b are lower electrodes, 12.16 is a moisture-sensitive thin film, and 13.17 is an upper electrode.
Claims (1)
の上部に絶縁材料をスパッタリングにより形成した感湿
薄膜と、該感湿薄膜の上部に形成した水分透過性の上部
電極とから構成した湿度センサであって、前記下部電極
は厚膜印刷によって形成した金属膜又はスパッタリング
或いは厚膜印刷によって形成した導電性セラミックス膜
から成ることを特徴とする湿度センサ。1. A humidity sensor consisting of a lower electrode formed on an insulating substrate, a moisture-sensitive thin film formed by sputtering an insulating material on the upper part of the lower electrode, and a moisture-permeable upper electrode formed on the upper part of the humidity-sensitive thin film. The humidity sensor is characterized in that the lower electrode is made of a metal film formed by thick film printing or a conductive ceramic film formed by sputtering or thick film printing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2165788A JPH01196558A (en) | 1988-02-01 | 1988-02-01 | Humidity sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2165788A JPH01196558A (en) | 1988-02-01 | 1988-02-01 | Humidity sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01196558A true JPH01196558A (en) | 1989-08-08 |
Family
ID=12061118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2165788A Pending JPH01196558A (en) | 1988-02-01 | 1988-02-01 | Humidity sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01196558A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535662A (en) * | 2004-04-02 | 2007-12-06 | カミンズ,チモシー | Integrated electronic sensor |
| CN112710700A (en) * | 2019-10-25 | 2021-04-27 | 梅斯法国公司 | Inorganic humidity sensor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5488194A (en) * | 1977-12-26 | 1979-07-13 | Rotsukurifu Piitaa | Sensor for electric hygrometer |
| JPS61196151A (en) * | 1985-02-27 | 1986-08-30 | Totsuka Tadao | Moisture sensor and manufacture thereof |
-
1988
- 1988-02-01 JP JP2165788A patent/JPH01196558A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5488194A (en) * | 1977-12-26 | 1979-07-13 | Rotsukurifu Piitaa | Sensor for electric hygrometer |
| JPS61196151A (en) * | 1985-02-27 | 1986-08-30 | Totsuka Tadao | Moisture sensor and manufacture thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007535662A (en) * | 2004-04-02 | 2007-12-06 | カミンズ,チモシー | Integrated electronic sensor |
| CN112710700A (en) * | 2019-10-25 | 2021-04-27 | 梅斯法国公司 | Inorganic humidity sensor device |
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