JPH01219043A - Transparent conductive glass substrate and solar-cell module - Google Patents

Transparent conductive glass substrate and solar-cell module

Info

Publication number
JPH01219043A
JPH01219043A JP4384188A JP4384188A JPH01219043A JP H01219043 A JPH01219043 A JP H01219043A JP 4384188 A JP4384188 A JP 4384188A JP 4384188 A JP4384188 A JP 4384188A JP H01219043 A JPH01219043 A JP H01219043A
Authority
JP
Japan
Prior art keywords
glass substrate
film layer
substrate
transparent
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4384188A
Other languages
Japanese (ja)
Inventor
Tadatora Nagao
忠虎 長尾
Sadamitsu Tsuboi
坪井 貞光
Shinzou Tanaka
田中 進造
Hironobu Yamamoto
博信 山本
Yukihiro Katou
之啓 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Sheet Glass Co Ltd
Original Assignee
Nippon Sheet Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Sheet Glass Co Ltd filed Critical Nippon Sheet Glass Co Ltd
Priority to JP4384188A priority Critical patent/JPH01219043A/en
Publication of JPH01219043A publication Critical patent/JPH01219043A/en
Pending legal-status Critical Current

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  • Non-Insulated Conductors (AREA)
  • Surface Treatment Of Glass (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To easily and stably form a rugged SnO2 conductive film layer with a reduced loss in the surface reflection of sunbeams on a substrate by growing an SnO2 film on the surface of a transparent glass substrate provided with fine and uniform ruggednesses by sandblast in the vapor phase. CONSTITUTION:The transparent conductive glass substrate 10 has three layers consisting of a transparent glass substrate 12, an SiO2 film layer 14, and an SnO2 film layer 16. Fine and uniform ruggednesses are formed on one side of the substrate 12 by sandblast, and the film layer 14 is formed on the rugged surface of the substrate 12 by the chemical vapor growth method, etc. Since the film layer 14 is used to prevent the elution of alkali from glass when the substrate 12 is based on the soda lime, the layer 14 is made as thin as possible, and the same ruggednesses as those formed on the substrate 12 are formed on its surface. When the SnO2 film layer 16 is formed on the rugged surface by the chemical vapor growth method, the layer is grown in the form of a hexagonal system, the crystal growth rate is varied by the ruggedness, and a rugged surface effective for light diffusion is formed.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、光拡散に効果のある透明電導膜層付きの凹凸
ガラス基板に関し、更に詳しくは、サンドブラストによ
り表面に微細均一な凹凸を形成した透明ガラス基板と、
気相成長による5n02電導膜層とを組み合わせた透明
電導ガラス基板及びそれを用いた太陽電池モジュールに
関するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an uneven glass substrate with a transparent conductive film layer that is effective for light diffusion, and more specifically, a glass substrate with fine uniform unevenness formed on the surface by sandblasting. a transparent glass substrate,
The present invention relates to a transparent conductive glass substrate combined with a 5n02 conductive film layer formed by vapor phase growth, and a solar cell module using the same.

[従来の技術] 透明ガラス基板とSnO□電導膜層とを組み合わせた透
明電導ガラス基板は、例えば太陽電池モジュールの基板
等に利用されている。アモルファス太陽電池の高効率化
のためには、太陽光をなるべく多く吸収するように表面
反射損を低減することが重要である。このため基板の凹
凸化が図られている。
[Prior Art] A transparent conductive glass substrate, which is a combination of a transparent glass substrate and a SnO□ conductive film layer, is used, for example, as a substrate for a solar cell module. In order to improve the efficiency of amorphous solar cells, it is important to reduce surface reflection loss so that as much sunlight as possible is absorbed. For this reason, the substrate is made uneven.

このような凹凸ガラス基板を形成するには次のような従
来技術がある。その一つはガラス基板に下地層となるS
 i O,膜層を形成する時にディッピング法等により
凹凸を付ける技術であり、また他の技術としては5no
zl?W層を形成する時にコーティング方法やコーティ
ング条件を工夫することにより結晶粒子のグレンサイズ
を大きくして凹凸を付与する試みもある。
There are the following conventional techniques for forming such an uneven glass substrate. One of them is S, which forms the base layer on the glass substrate.
iO is a technique for creating unevenness by dipping, etc. when forming a film layer, and other techniques include 5no.
zl? Some attempts have been made to increase the grain size of crystal grains and provide unevenness by modifying the coating method and coating conditions when forming the W layer.

[発明が解決しようとする課題] しかし上記のような従来技術では適切な寸法の凹凸を均
一に且つ安定して形成することは難しい。
[Problems to be Solved by the Invention] However, with the above-mentioned conventional techniques, it is difficult to uniformly and stably form irregularities of appropriate dimensions.

精密な膜を形成するコーティング法としては化学的気相
成長法やスパッタ法があるが、これらのコーティング法
は本来均一な膜を形成するためのものであり、通常形成
される粒子の大きさは数百人程度のオーダーで、それ以
上大きな粒子は形成し難い。特にスパッタ法では粒子は
更に細かくなる。従ってコーティング法やコーティング
条件の工夫のみではグレンサイズを十分大きくし且つ均
一な凹凸を形成することは難しいし、敢えてグレンサイ
ズを大きくしようとするとコーティングの能率が著しく
悪くなってしまうし均一になり難い。
Coating methods for forming precise films include chemical vapor deposition and sputtering, but these coating methods are originally intended to form uniform films, and the size of the particles usually formed is small. On the order of a few hundred particles, it is difficult to form particles larger than that. Particularly in the sputtering method, the particles become even finer. Therefore, it is difficult to make the grain size sufficiently large and form uniform unevenness only by changing the coating method and coating conditions, and if you intentionally try to increase the grain size, the efficiency of the coating will deteriorate significantly and it will be difficult to achieve uniformity. .

本発明の目的は、上記のような従来技術の欠点を解消し
、透明ガラス基板に形成するSnO2電導膜層が太陽光
の散乱にとって適切な寸法の且つ均一な凹凸に形成され
、容易に且つ再現性よく安定に製造できるような透明電
導ガラス基板を提供することにある。
The purpose of the present invention is to eliminate the drawbacks of the prior art as described above, and to form a SnO2 conductive film layer formed on a transparent glass substrate into uniform irregularities with appropriate dimensions for scattering sunlight, which can be easily and reproducibly produced. An object of the present invention is to provide a transparent conductive glass substrate that can be manufactured stably with good performance.

また本発明の他の目的は、そのような透明電導ガラス基
板を用いることによって、入射光の散乱効果を高め高効
率化を図ることができるような太陽−電池モジュールを
提供することにある。
Another object of the present invention is to provide a solar cell module that can enhance the scattering effect of incident light and achieve high efficiency by using such a transparent conductive glass substrate.

[課題を解決するための手段] 上記のような目的を達成することのできる本発明は、サ
ンドブラストにより表面に微細均一な凹凸を形成した透
明ガラス基板と、その凹凸面側に気相成長により形成さ
れ結晶粒子が大きな凹凸形状を呈するSnO!電導膜層
とを具備している透明電導ガラス基板である。
[Means for Solving the Problems] The present invention, which can achieve the above-mentioned objects, includes a transparent glass substrate whose surface has fine and uniform irregularities formed by sandblasting, and a transparent glass substrate formed by vapor phase growth on the irregular surface side. SnO whose crystal grains have a large uneven shape! This is a transparent conductive glass substrate comprising a conductive film layer.

ここで透明ガラス基板がソーダライム系のような通常の
ガラス材料の場合にはアルカリ溶出を防ぐため凹凸面に
S i Oを膜層をコーティングし、その上にSnO,
電導膜層を形成する。
If the transparent glass substrate is a normal glass material such as soda lime, the uneven surface is coated with a film layer of SiO to prevent alkali elution, and then SnO,
Form a conductive film layer.

透明ガラス基板がホウケイ酸系ガラスのようなアルカリ
フリーの場合にはS i Ox膜層は設けなくてよい。
If the transparent glass substrate is alkali-free, such as borosilicate glass, it is not necessary to provide the SiOx film layer.

太陽電池モジュールは、上記のような透明電導ガラス基
板の5n02電導膜層側にアモルファスシリコン層を形
成したものである。
The solar cell module has an amorphous silicon layer formed on the 5n02 conductive film layer side of the transparent conductive glass substrate as described above.

[作用] 化学的気相成長により形成されるSnO,膜層は六方晶
系の形で成長する。透明ガラス基板の表面にサンドブラ
ストにより微細均一な凹凸を形成しておくと、SnO,
膜の結晶成長にスピード変化が起き、結晶粒子が大きな
凹凸形状を呈し光拡散に効果のある透明電導ガラス基板
を作ることができる。
[Operation] The SnO film layer formed by chemical vapor deposition grows in a hexagonal system. By forming fine and uniform irregularities on the surface of a transparent glass substrate by sandblasting, SnO,
A speed change occurs in the crystal growth of the film, and the crystal grains exhibit a large uneven shape, making it possible to create a transparent conductive glass substrate that is effective in light diffusion.

このような透明電導ガラス基板を用いてそれにアモルフ
ァスシリコン層を形成した太陽電池モジュールは、大き
な結晶粒子による凹凸によって内部散乱効果が高まり入
射した太陽光を多く吸収できるため高効率化される。
A solar cell module using such a transparent conductive glass substrate and forming an amorphous silicon layer thereon has high efficiency because the internal scattering effect is enhanced by the unevenness of large crystal particles and a large amount of incident sunlight can be absorbed.

[実施例] 第1図は本発明に係る透明電導ガラス基板の一実施例を
示す断面図である。この透明電導ガラス基板10は、透
明ガラス基板12とSiO□膜層14とSnow膜層1
6との3層構造をなす。
[Example] FIG. 1 is a sectional view showing an example of a transparent conductive glass substrate according to the present invention. This transparent conductive glass substrate 10 includes a transparent glass substrate 12, a SiO□ film layer 14, and a Snow film layer 1.
It has a three-layer structure with 6.

透明ガラス基板12は、その片面にサンドブラストによ
り微細均一な凹凸を形成したものである。サンドブラス
トは、要求される凹凸の程度により300#〜2000
#程度の粒度の研磨材(例えばカーボランダム、アラン
ダム、ガーネット、チルドスチール等)の中から任意の
粒度並びに材質のものを選んで使用する。5iOt膜層
14は透明ガラス基板12の凹凸面に化学的気相成長法
あるいはディッピング法等により形成する。これは透明
ガラス基板12がソーダライム系のような場合に必要な
もので、ガラスからのアルカリ溶出を阻止する機能を果
たす、従ってこのS i Ox膜層は前記透明ガラス基
板の凹凸面を覆う程度にできるだけ薄いものとする。そ
の結果、このS i Ox tIIll 14の表面に
も前記透明ガラス基板12に形成したのと同様の凹凸が
形成される。
The transparent glass substrate 12 has fine and uniform irregularities formed on one side thereof by sandblasting. Sandblasting is 300# to 2000 depending on the degree of unevenness required.
An arbitrary particle size and material is selected from among abrasives with a particle size of # order (for example, carborundum, alundum, garnet, chilled steel, etc.). The 5iOt film layer 14 is formed on the uneven surface of the transparent glass substrate 12 by chemical vapor deposition, dipping, or the like. This is necessary when the transparent glass substrate 12 is made of soda lime, etc., and functions to prevent alkaline elution from the glass. Therefore, this SiOx film layer covers the uneven surface of the transparent glass substrate. It should be as thin as possible. As a result, the same irregularities as those formed on the transparent glass substrate 12 are formed on the surface of the S i Ox tIIll 14 as well.

S n OZ電導膜層16は、S i O,膜層14の
凹凸面に化学的気相成長法により形成する。
The S n OZ conductive film layer 16 is formed on the uneven surface of the S i O film layer 14 by chemical vapor deposition.

化学的気相成長法によるSnO,膜の成長は六方晶系の
形で発達する。基板側に微細で均一な凹凸が形成されて
いると、Sn0w膜の結晶成長にスピード変化が生じ、
結晶粒子は大きな凹凸形状となって成長し、光拡散に効
果のある凹凸面が形成されることになる。
The SnO film grown by chemical vapor deposition develops in a hexagonal system. When fine and uniform irregularities are formed on the substrate side, the speed of crystal growth of the Sn0w film changes,
The crystal grains grow in a large uneven shape, forming an uneven surface that is effective for light diffusion.

太陽光での光散乱を効果的に行わせるには、山と山(谷
と谷)とのピッチが0.1〜1μm程度で、高さ(山と
谷との距離)がその半分程度の凹凸を均一に形成するこ
とが肝要である。
In order to effectively scatter sunlight, the pitch between peaks (valleys) should be about 0.1 to 1 μm, and the height (distance between peaks and valleys) should be about half that. It is important to form the unevenness uniformly.

サンドブラストによる凹凸を形成した透明ガラス基板1
2と気相成長によるsnow電導膜層16との組み合わ
せは、このような要件を十分満足するものとなる。
Transparent glass substrate 1 with unevenness formed by sandblasting
The combination of 2 and the snow conductive film layer 16 formed by vapor phase growth fully satisfies these requirements.

第2図は本発明の他の実施例を示す断面図である。この
実施例では前記第1図に示す実施例のものと異なり中間
のSin!膜層が設けられていない、使用する透明ガラ
ス基板12がホウケイ酸系ガラスのようなアルカリフリ
ーの場合にはこのように340g膜を形成しなくてよく
、製作はより容易となる。
FIG. 2 is a sectional view showing another embodiment of the present invention. In this embodiment, unlike the embodiment shown in FIG. 1, the intermediate Sin! If the transparent glass substrate 12 to be used, which is not provided with a film layer, is alkali-free such as borosilicate glass, it is not necessary to form a 340 g film as described above, and the production becomes easier.

第3図はこのようにして得られる透明電導ガラス基板を
用いた太陽電池モジュールの一例を示す断面図である。
FIG. 3 is a sectional view showing an example of a solar cell module using the transparent conductive glass substrate obtained in this manner.

ここでは第1図に示すような透明電導ガラス基板10を
用い、そのS n Oz電導膜層16側にアモルファス
シリコン層18を形成している。
Here, a transparent conductive glass substrate 10 as shown in FIG. 1 is used, and an amorphous silicon layer 18 is formed on the S n Oz conductive film layer 16 side.

従ってSnO,電導膜層16とアモルファスシリコン層
18との間には適切な寸法で且つ均一な凹凸が存在して
いることになる。そのためアモルファスシリコン層18
に入射した光は凹凸で散乱され、内部で反射を繰り返す
ことになり、光吸収効果が高まり高効率化できることに
なる。
Therefore, uniform irregularities with appropriate dimensions exist between the SnO conductive film layer 16 and the amorphous silicon layer 18. Therefore, the amorphous silicon layer 18
The incident light is scattered by the unevenness and is repeatedly reflected inside, increasing the light absorption effect and achieving high efficiency.

[発明の効果] 本発明は上記のようにサンドブラストにより透明ガラス
基板に凹凸を形成し、その凹凸面側に気相成長によりS
nO,電導膜を形成したから、Snowの結晶粒子が大
きな凹凸形状を呈し光散乱効果が向上する。透明ガラス
基板への凹凸形成はサンドブラスト法であるから、均一
微細な凹凸形成を容易に行なえる。また下地となる透明
ガラス基板の凹凸コントロールが容易であるため、Sn
O,結晶成長による凹凸を最適条件に容易に制御するこ
とが可能となる。
[Effects of the Invention] As described above, the present invention forms irregularities on a transparent glass substrate by sandblasting, and then forms S on the irregular surface side by vapor phase growth.
Since the nO conductive film is formed, the Snow crystal particles exhibit a large uneven shape, improving the light scattering effect. Since the unevenness is formed on the transparent glass substrate by the sandblasting method, uniform and fine unevenness can be easily formed. In addition, since it is easy to control the unevenness of the underlying transparent glass substrate, Sn
O, it becomes possible to easily control unevenness due to crystal growth to optimal conditions.

これらの結果、品質の安定したしかも適切な寸法の凹凸
を均一に製造でき、良好な光拡散効果が得られる。
As a result, it is possible to uniformly manufacture irregularities of stable quality and appropriate dimensions, and a good light diffusion effect can be obtained.

また本発明はそのような適切電導ガラス基板にアモルフ
ァスシリコン層を形成した太陽電池モジエールであるか
ら、光散乱効果が大きく内部反射を多くして入射した光
を極力多く吸収でき、高効率化を図ることができる効果
がある。
Furthermore, since the present invention is a solar cell module in which an amorphous silicon layer is formed on such an appropriately conductive glass substrate, it has a large light scattering effect, increases internal reflection, absorbs as much incident light as possible, and achieves high efficiency. There is an effect that can be done.

【図面の簡単な説明】 第1図は本発明に係る透明電導ガラス基板の一実施例を
示す断面図、第2図は本発明の他の実施例を示す断面図
、第3図は本発明に係る太陽電池モジュールの一実施例
を示す断面図である。 10・・・透明電導ガラス基板、12・・・透明ガラス
基板、14−3ift膜層、16− S n Oz電導
膜層、18・・・アモルファスシリコン層。 特許出願人  日本板硝子株式会社
[Brief Description of the Drawings] Fig. 1 is a sectional view showing one embodiment of a transparent conductive glass substrate according to the present invention, Fig. 2 is a sectional view showing another embodiment of the invention, and Fig. 3 is a sectional view showing an embodiment of the transparent conductive glass substrate according to the present invention. FIG. 2 is a sectional view showing an example of a solar cell module according to the present invention. DESCRIPTION OF SYMBOLS 10... Transparent conductive glass substrate, 12... Transparent glass substrate, 14-3 ift film layer, 16- SnOz conductive film layer, 18... Amorphous silicon layer. Patent applicant Nippon Sheet Glass Co., Ltd.

Claims (1)

【特許請求の範囲】 1、サンドブラストにより表面に微細均一な凹凸を形成
した透明ガラス基板と、その凹凸面側に気相成長により
形成され結晶粒子が大きな凹凸形状を呈するSnO_2
電導膜層とを具備している透明電導ガラス基板。 2、透明ガラス基板とSnO_2電導膜層との間にSi
O_2膜層が設けられている請求項1記載の透明電導ガ
ラス基板。 3、請求項1又は請求項2記載の透明電導ガラス基板の
SnO_2電導膜層側にアモルファスシリコン層を形成
した太陽電池モジュール。
[Claims] 1. A transparent glass substrate with fine and uniform irregularities formed on its surface by sandblasting, and SnO_2 with crystal grains formed by vapor phase growth on the irregular surface side and exhibiting a large irregular shape.
A transparent conductive glass substrate comprising a conductive film layer. 2. Si between the transparent glass substrate and the SnO_2 conductive film layer
The transparent conductive glass substrate according to claim 1, further comprising an O_2 film layer. 3. A solar cell module in which an amorphous silicon layer is formed on the SnO_2 conductive film layer side of the transparent conductive glass substrate according to claim 1 or 2.
JP4384188A 1988-02-26 1988-02-26 Transparent conductive glass substrate and solar-cell module Pending JPH01219043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4384188A JPH01219043A (en) 1988-02-26 1988-02-26 Transparent conductive glass substrate and solar-cell module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4384188A JPH01219043A (en) 1988-02-26 1988-02-26 Transparent conductive glass substrate and solar-cell module

Publications (1)

Publication Number Publication Date
JPH01219043A true JPH01219043A (en) 1989-09-01

Family

ID=12674967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4384188A Pending JPH01219043A (en) 1988-02-26 1988-02-26 Transparent conductive glass substrate and solar-cell module

Country Status (1)

Country Link
JP (1) JPH01219043A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964962A (en) * 1995-11-13 1999-10-12 Sharp Kabushiki Kaisha Substrate for solar cell and method for producing the same; substrate treatment apparatus; and thin film solar cell and method for producing the same
CN102347379A (en) * 2010-07-31 2012-02-08 信义光伏产业(安徽)控股有限公司 Conductive glass and preparation method and application thereof
CN102347378A (en) * 2010-07-31 2012-02-08 信义光伏产业(安徽)控股有限公司 Conducting glass and preparation method thereof
CN102863156A (en) * 2012-09-21 2013-01-09 蚌埠玻璃工业设计研究院 Preparation method of textured AZO (aluminum-doped zinc oxide) transparent conductive film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175465A (en) * 1984-02-21 1985-09-09 Nippon Sheet Glass Co Ltd solar cell substrate
JPS61227946A (en) * 1985-03-30 1986-10-11 Asahi Glass Co Ltd Electroconductive glass

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60175465A (en) * 1984-02-21 1985-09-09 Nippon Sheet Glass Co Ltd solar cell substrate
JPS61227946A (en) * 1985-03-30 1986-10-11 Asahi Glass Co Ltd Electroconductive glass

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964962A (en) * 1995-11-13 1999-10-12 Sharp Kabushiki Kaisha Substrate for solar cell and method for producing the same; substrate treatment apparatus; and thin film solar cell and method for producing the same
CN102347379A (en) * 2010-07-31 2012-02-08 信义光伏产业(安徽)控股有限公司 Conductive glass and preparation method and application thereof
CN102347378A (en) * 2010-07-31 2012-02-08 信义光伏产业(安徽)控股有限公司 Conducting glass and preparation method thereof
CN102863156A (en) * 2012-09-21 2013-01-09 蚌埠玻璃工业设计研究院 Preparation method of textured AZO (aluminum-doped zinc oxide) transparent conductive film

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