JPH0122814B2 - - Google Patents
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- Publication number
- JPH0122814B2 JPH0122814B2 JP3338685A JP3338685A JPH0122814B2 JP H0122814 B2 JPH0122814 B2 JP H0122814B2 JP 3338685 A JP3338685 A JP 3338685A JP 3338685 A JP3338685 A JP 3338685A JP H0122814 B2 JPH0122814 B2 JP H0122814B2
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- Prior art keywords
- light
- reaction
- gas
- window
- gap
- Prior art date
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- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
[技術分野]
本発明は光化学反応装置に関し、特にその反応
用照射光の透光窓の内側に反応生成物質が付着す
るのを防止するようにした光化学反応装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a photochemical reaction device, and more particularly to a photochemical reaction device that prevents a reaction product from adhering to the inside of a transparent window for irradiating reaction light.
[従来技術]
気相で光化学反応を実施させるようにした従来
の光化学反応装置においては、反応容器の反応用
光源側に反応光を透過させる例えば、石英ガラス
などで形成された窓が設置されており、この窓か
ら反応光を反応容器内に入射させるように構成さ
れている。[Prior Art] In a conventional photochemical reaction device that performs a photochemical reaction in a gas phase, a window made of, for example, quartz glass is installed on the reaction light source side of a reaction vessel to transmit reaction light. The reaction light is allowed to enter the reaction vessel through this window.
しかし、このような光化学反応装置では、反応
生成物質がこの透光窓の内側、すなわち反応容器
側に付着し、入射する反応光量が時間の経過とと
もに減衰するので、一定時間ごとに反応作業を中
止して窓に付着した反応物質を取り去る必要があ
り、長時間の光化学反応の継続は不可能であつ
た。 However, in such a photochemical reaction device, reaction products adhere to the inside of the light-transmitting window, that is, on the reaction vessel side, and the amount of incident reaction light attenuates over time, so the reaction operation must be stopped at regular intervals. It was necessary to remove the reactants adhering to the window by removing the reactants, making it impossible to continue the photochemical reaction for a long time.
そこで、これに対処するために、
(1) 窓の反応容器側の内面に弗素系油を塗布す
る。 Therefore, in order to deal with this, (1) Apply fluorine-based oil to the inner surface of the window on the reaction vessel side.
(2) 非反応性ガスを導光路に放出する。(2) Release non-reactive gas into the light guide.
等の手段が構じられてきた。Such measures have been devised.
しかしながら、弗素系油を窓面に塗布したので
は、弗素系油に吸着した不純物によつて生成物が
汚染される虞があるのみならず、その油膜表面に
生成物の膜が形成されて透過光量の減少をきた
す。 However, if fluorine-based oil is applied to the window surface, there is a risk that the product will not only be contaminated by impurities adsorbed to the fluorine-based oil, but also that a film of product will be formed on the surface of the oil and permeate. This causes a decrease in the amount of light.
また、上記の(2)のように単に非反応性ガスを導
光路に放出するのみでは多量の非反応性ガスを必
要とし、非反応性ガスによつて原料ガスが大幅に
希釈されて生成物の収率が極めて悪くなり、更に
また、このような希釈を抑制しようとすると反応
ガスが窓の方に逆拡散してきて上述したような窓
の曇りを発生させる。 In addition, simply releasing non-reactive gas into the light guide as in (2) above requires a large amount of non-reactive gas, and the raw material gas is significantly diluted by the non-reactive gas, resulting in product formation. Furthermore, if such dilution is attempted to be suppressed, the reaction gas will diffuse back toward the window, causing the window fogging described above.
すなわち、上述したように、いずれの場合も長
時間の光化学反応を継続させるには不適切であつ
て実用性に乏しく、特に光化学反応を利用した薄
膜作製技術においては、作製膜の損傷が少なく、
高品位膜の作製が期待されるので採用されるには
難点があり、今日にいたるまで窓の曇りの問題が
解決されていなかつた。 That is, as mentioned above, in any case, it is inappropriate and impractical to continue a photochemical reaction for a long time, and in particular, in thin film production techniques that utilize photochemical reactions, there is little damage to the produced film.
Although it is expected to produce a high-quality film, there are difficulties in its adoption, and the problem of fogging on windows has not been solved to this day.
[目的]
本発明の目的は、上述したような問題点に鑑
み、原料の反応ガスおよび反応生成物が反応用照
射光透光窓の表面に直接付着するのを防止するよ
うにした光化学反応装置を提供することにある。[Objective] In view of the above-mentioned problems, an object of the present invention is to provide a photochemical reaction device that prevents raw material reaction gas and reaction products from directly adhering to the surface of a reaction irradiation light-transmitting window. Our goal is to provide the following.
[構成]
かかる目的を達成するために、本発明では、反
応容器に透光窓および導光路を経て反応用照射光
源からの光を供給し、光の作用により反応容器中
の原料ガスの化学反応を行うようにした光化学反
応装置において、透光窓に接する導光路の周囲部
に透光窓に沿つたすき間を配置し、すき間から導
光路に非化学反応性の希釈ガスを導くようにした
ことを特徴とするものである。[Structure] In order to achieve the above object, in the present invention, light from a reaction irradiation light source is supplied to the reaction vessel through a light-transmitting window and a light guide path, and the chemical reaction of the raw material gas in the reaction vessel is caused by the action of the light. In a photochemical reaction device designed to perform the following steps, a gap is arranged along the light-transmitting window around the light guide in contact with the light-transmitting window, and a non-chemically reactive diluent gas is guided from the gap to the light guide. It is characterized by:
[実施例]
以下に、図面に基づいて本発明を詳細かつ具体
的に説明する。[Example] The present invention will be described below in detail and specifically based on the drawings.
第1図は本発明の一実施例を示す。 FIG. 1 shows an embodiment of the invention.
ここで、1は反応容器であり、2は反応容器1
の空間1Aに向けて原料ガスを導入する導入管に
配設したガス供給用の導入弁、3は導入管の先端
に設けた吹出しノズルである。反応容器1はあら
かじめ真空ポンプ4によつてその空間1Aが真空
に保たれるよう構成されており、真空に保たれた
空間1Aに吹出しノズル3から反応させる原料ガ
スを噴出させ、容器1内で光化学反応を進行させ
る。 Here, 1 is the reaction vessel, 2 is the reaction vessel 1
An introduction valve for gas supply is provided on an introduction pipe for introducing raw material gas into the space 1A, and 3 is a blow-off nozzle provided at the tip of the introduction pipe. The reaction vessel 1 is configured in advance so that its space 1A is kept in a vacuum by a vacuum pump 4, and the raw material gas to be reacted is ejected from the blow-off nozzle 3 into the vacuum kept space 1A, and the reaction is carried out inside the vessel 1. Allows photochemical reactions to proceed.
5は容器1に付設し、その中心部に導光路6を
設けた直管であり、直管5の内壁と導光路6との
間に円筒状の隔壁7を配置して隔壁7と直管5の
内壁との間にすき間通路8を形成しておく。更に
9は直管5の端部に設けたフランジ部5Aにオー
リング10を介して取付けた反応光照射用の透光
窓であり、透光窓9は例えば合成石英板等によつ
て形成されている。 5 is a straight tube attached to the container 1 and has a light guide path 6 in its center, and a cylindrical partition wall 7 is arranged between the inner wall of the straight tube 5 and the light guide path 6 to connect the partition wall 7 and the straight tube. A gap passage 8 is formed between the inner wall of the groove and the inner wall of the groove 5. Further, reference numeral 9 denotes a light-transmitting window for irradiating reaction light, which is attached to the flange portion 5A provided at the end of the straight pipe 5 via an O-ring 10, and the light-transmitting window 9 is formed of, for example, a synthetic quartz plate. ing.
しかしてここで、上記の隔壁7の透光窓9側の
端部と透光窓9の内面との間には極めて間隔の狭
いすき間11が保たれるようになし、更に隔壁7
と直管5との間に形成したすき間通路8の途中に
はオーリング12を周設して、このオーリング1
2により透光窓9寄りのすき間通路8に希釈ガス
導入管13から希釈ガスを供給するようにする。
14はガス導入管13から供給する希釈ガスの量
を調節するためのガス調整弁、15は反応容器1
を真空にするための排気管16に介装した排気
弁、17は反応光を透光する光源である。 Here, however, an extremely narrow gap 11 is maintained between the end of the partition wall 7 on the transparent window 9 side and the inner surface of the transparent window 9, and furthermore, the partition wall 7
An O-ring 12 is provided around the gap passage 8 formed between the straight pipe 5 and the O-ring 1.
2, the diluent gas is supplied from the diluent gas introduction pipe 13 to the gap passage 8 near the transparent window 9.
14 is a gas adjustment valve for adjusting the amount of dilution gas supplied from the gas introduction pipe 13; 15 is a reaction vessel 1;
An exhaust valve 17 is installed in an exhaust pipe 16 to create a vacuum, and 17 is a light source that transmits reaction light.
なお、すき間11の間隔は隔壁7の直管5に沿
つた方向の微移動により調整可能としておくのが
好適であり、更にまた、ガス導入管13からすき
間通路8およびすき間11を経て導光路6へと導
かれる。希釈ガス(例えばアルゴン、ヘリウム等
のように光に対して非反応性でかつ原料ガスより
高圧に保たれたガス)の流量はガス調整弁14に
よつて調整可能とする。 It is preferable that the interval between the gaps 11 can be adjusted by slight movement of the partition wall 7 in the direction along the straight pipe 5, and furthermore, the light guide path 6 is connected from the gas introduction pipe 13 through the gap passage 8 and the gap 11. be led to. The flow rate of the diluent gas (eg, a gas that is non-reactive to light and maintained at a higher pressure than the source gas, such as argon or helium) can be adjusted by a gas regulating valve 14.
一方、導光路6の断面形状はできれば光束の断
面に合せるようになし、それより拡げるにしても
必要最小限にとどめて、無駄に希釈ガスが放散す
るのを防止すると共に、反応ガスが導光路6を介
して透光窓9の側に拡散してくるのを防止するよ
うに上記ガス調整弁14によりガス流量を調整す
る。 On the other hand, the cross-sectional shape of the light guide path 6 should be made to match the cross section of the light beam if possible, and even if it is expanded beyond that, it should be kept to the minimum necessary to prevent the dilution gas from dissipating unnecessarily, and to prevent the reaction gas from passing through the light guide path. The gas flow rate is adjusted by the gas adjustment valve 14 so as to prevent the gas from diffusing to the transparent window 9 side through the gas valve 6 .
このように構成した光化学反応装置において
は、ノズル3から容器1の空間1Aに吹き出させ
た原料ガスに透光窓9および導光路6を介して光
源17からの光を投射させ、光化学反応によつて
空間1Aに載置された例えばウエーハ上にアモル
フアスシリコン膜等を形成することができるが、
その際に透光窓9の内面にはすき間通路8を介し
て導かれた希釈ガスがすき間11に沿つて導光路
6の側に導かれることによりガスの膜流が形成さ
れ、更に導光路6にも希釈ガスが充満されるの
で、空間1Aの側から反応ガスが透光窓9に誘導
されるのを抑制して透光窓9に反応生成物が付着
するのを防止することができる。 In the photochemical reaction device configured as described above, light from the light source 17 is projected onto the raw material gas blown out from the nozzle 3 into the space 1A of the container 1 through the transparent window 9 and the light guide path 6, and a photochemical reaction is caused. For example, an amorphous silicon film or the like can be formed on a wafer placed in the space 1A.
At this time, the diluent gas guided through the gap passage 8 is guided toward the light guide path 6 along the gap 11 on the inner surface of the light-transmitting window 9, thereby forming a gas film flow. Since the diluent gas is also filled in the space 1A, it is possible to suppress the reaction gas from being guided to the light-transmitting window 9 from the side of the space 1A, and to prevent reaction products from adhering to the light-transmitting window 9.
なお、本願人はこのように構成した光化学反応
装置についての実験を以下のような条件のもとで
行い、その効果を確認することができた。 The applicant conducted experiments on the photochemical reaction device constructed in this manner under the following conditions, and was able to confirm its effects.
本実験では2%のジシランSi2H6および98%の
ヘリウムからなる混合ガスを反応させる原料ガス
として使用し、反応容器1内でアモルフアスシリ
コン膜を形成させる際に、その透光膜9への反応
生成物付着防止のために希釈ガスとしてアルゴン
を使用した。なお、この場合の反応用照射光源1
7にはAr・Fのエキシマレーザを使用し、その
照射強度を120mJ/cm2(193nm)とし、更にレ
ーザビームの断面を約25×3mm2とした。 In this experiment, a mixed gas consisting of 2% disilane Si 2 H 6 and 98% helium was used as a raw material gas for the reaction. Argon was used as a diluent gas to prevent reaction products from adhering. In addition, in this case, the reaction irradiation light source 1
In Example 7, an Ar.F excimer laser was used, the irradiation intensity was 120 mJ/cm 2 (193 nm), and the cross section of the laser beam was approximately 25×3 mm 2 .
一方、装置自体の方は、導光路6の断面積を30
×8mm2、その長さを80mmとし、円筒状隔壁7の外
径を46mmとなして、更にすき間通路8としての管
5と隔壁7との間隔を1mmに保たせ、すき間11
における窓9と隔壁7との間の間隔を400μmと
した。 On the other hand, for the device itself, the cross-sectional area of the light guide path 6 is set to 30
×8 mm 2 , the length is 80 mm, the outer diameter of the cylindrical partition wall 7 is 46 mm, and the distance between the pipe 5 as the gap passage 8 and the partition wall 7 is maintained at 1 mm, and the gap 11
The distance between the window 9 and the partition wall 7 was 400 μm.
このような装置の反応容器空間1Aにおける圧
力を2〜100Torrに保つた条件の下に、上述した
反応ガスの流量を標準状態で50〜300cm3/分の範
囲内で変化させて供給し、一方、アルゴンを希釈
ガスとして流量50〜100cm3/分の範囲内で変化さ
せて供給した結果、このような流量条件の範囲内
では30分以上の光照射によつても透光窓9の内側
には反応生成物の何らかの付着もなく全く曇りが
なくてもアモルフアスシリコン膜を形成すること
ができた。 Under the condition that the pressure in the reaction vessel space 1A of such an apparatus is maintained at 2 to 100 Torr, the flow rate of the above-mentioned reaction gas is supplied while being varied within the range of 50 to 300 cm 3 /min under standard conditions, while As a result of supplying argon as a diluent gas at a flow rate varying within the range of 50 to 100 cm 3 /min, within the range of such flow rate conditions, the inside of the light-transmitting window 9 was not affected by light irradiation for 30 minutes or more. It was possible to form an amorphous silicon film without any adhesion of reaction products and without any cloudiness.
これに対して、本発明にかかる防曇装置を装備
せず、すなわち、上述したような直管5に隔壁7
や通路8およびすき間11を設けることなく直接
にアルゴンガスを流量500cm3/分で供給し、一方、
2Torrに保たれた空間1Aに100cm3/分の流量で
上記反応ガスを供給して、同様なレーザ照射を行
つた結果、透光窓9の曇は顕著で、僅か1分30秒
後、その193nmの透過率が90%から5%以下に
まで激減し、光化学反応の続行が不可能となつ
た。 On the other hand, if the antifogging device according to the present invention is not installed, that is, the straight pipe 5 as described above is provided with the partition wall 7.
Argon gas is directly supplied at a flow rate of 500 cm 3 /min without providing a passage 8 or a gap 11, while,
When the above reaction gas was supplied at a flow rate of 100 cm 3 /min to the space 1A kept at 2 Torr and the same laser irradiation was performed, the transparent window 9 fogged significantly, and after only 1 minute and 30 seconds, the reaction gas disappeared. The transmittance at 193 nm drastically decreased from 90% to less than 5%, making it impossible to continue the photochemical reaction.
[効果]
以上、詳細に説明したように、本発明によれ
ば、反応用照射光透光窓から光化学反応容器に光
化学反応用の光を導く導光路の透光窓と接する部
分に沿つてその周囲から非反応性希釈ガスの流れ
を導くようにしたすき間を形成し、このすき間を
介して導光路に希釈ガスを充満させることによ
り、透光窓の内面に反応ガスが接触して反応生成
物の付着するのを防止するようにしたので、従来
のように時間の経過と共に透光窓内面に付着する
反応生成物質を一定の短時間ごとに窓を取外して
除く必要がなくなり長時間にわたつて反応作業を
継続することが可能となり、効率の良い光化学反
応装置とすることができる。[Effects] As described above in detail, according to the present invention, the light for photochemical reaction is guided from the reaction irradiation light transmission window to the photochemical reaction vessel along the part of the light guide path in contact with the light transmission window. By forming a gap that guides the flow of non-reactive diluent gas from the surrounding area and filling the light guide path with the diluent gas through this gap, the reaction gas comes into contact with the inner surface of the transparent window and the reaction products are generated. This prevents the adhesion of reaction products to the inner surface of the translucent window over time, unlike conventional methods, which eliminates the need to remove the window at regular intervals to remove reaction products that adhere to the inner surface of the translucent window over a long period of time. It becomes possible to continue the reaction work, and an efficient photochemical reaction device can be obtained.
第1図は本発明光化学反応装置の一例を模式的
に示す構成図である。
1……反応容器、1A……空間、2……導入
弁、3……吹出しノズル、4……真空ポンプ、5
……直管、5A……フランジ部、6……導光路、
7……隔壁、8……すき間通路、9……透光窓、
10……オーリング、11……すき間、12……
オーリング、13……導入管、14……ガス調整
弁、15……排気弁、16……排気管、17……
光源。
FIG. 1 is a block diagram schematically showing an example of the photochemical reaction device of the present invention. 1...Reaction container, 1A...Space, 2...Introduction valve, 3...Blowout nozzle, 4...Vacuum pump, 5
... Straight pipe, 5A ... Flange part, 6 ... Light guide path,
7... Bulkhead, 8... Gap passage, 9... Translucent window,
10... O-ring, 11... Gap, 12...
O-ring, 13...Introduction pipe, 14...Gas adjustment valve, 15...Exhaust valve, 16...Exhaust pipe, 17...
light source.
Claims (1)
照射光源からの光を供給し、該光の作用により前
記反応容器中の原料ガスの化学反応を行うように
した光化学反応装置において、前記透光窓に接す
る前記導光路の周囲部に前記透光窓に沿つたすき
間を配設し、該すき間から前記導光路に非化学反
応性の希釈ガスを導くようにしたことを特徴とす
る光化学反応装置。 2 特許請求の範囲第1項に記載の光化学反応装
置において、前記導光路の断面積および長さは、
前記原料ガスの前記透光窓への拡散が禁止可能で
しかも前記光を前記反応容器に導くに支障のない
最小限の寸法であるこを特徴とする光化学反応装
置。[Scope of Claims] 1. A photochemistry system in which light from a reaction irradiation light source is supplied to a reaction vessel through a transparent window and a light guide path, and a chemical reaction of raw material gas in the reaction vessel is carried out by the action of the light. In the reaction apparatus, a gap is provided along the light-transmitting window around the light-transmitting window in contact with the light-transmitting window, and a non-chemically reactive diluent gas is guided from the gap to the light-guiding path. A photochemical reaction device featuring: 2. In the photochemical reaction device according to claim 1, the cross-sectional area and length of the light guide are as follows:
A photochemical reaction device characterized in that it has a minimum size that can prevent the source gas from diffusing into the light-transmitting window and does not cause any problem in guiding the light to the reaction vessel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3338685A JPS61192339A (en) | 1985-02-21 | 1985-02-21 | Photochemical reaction apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3338685A JPS61192339A (en) | 1985-02-21 | 1985-02-21 | Photochemical reaction apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61192339A JPS61192339A (en) | 1986-08-26 |
| JPH0122814B2 true JPH0122814B2 (en) | 1989-04-27 |
Family
ID=12385152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3338685A Granted JPS61192339A (en) | 1985-02-21 | 1985-02-21 | Photochemical reaction apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61192339A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01245795A (en) * | 1988-03-28 | 1989-09-29 | Daikin Ind Ltd | Electronic silencer |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9010638D0 (en) * | 1990-05-11 | 1990-07-04 | Secr Defence | Photon assisted cvd apparatus and method |
| JP5243089B2 (en) | 2008-04-09 | 2013-07-24 | 東京エレクトロン株式会社 | Seal structure of plasma processing apparatus, sealing method, and plasma processing apparatus |
| KR101110104B1 (en) * | 2008-04-09 | 2012-02-24 | 도쿄엘렉트론가부시키가이샤 | Sealing structure of plasma processing apparatus, sealing method, and plasma processing apparatus |
| EP2807901B1 (en) * | 2012-01-26 | 2017-04-05 | Microcoal, Inc. | Apparatus and methods for treating solids by electromagnetic radiation |
| DE102013214799A1 (en) | 2013-07-29 | 2015-01-29 | Wacker Chemie Ag | Process for producing polycrystalline silicon |
-
1985
- 1985-02-21 JP JP3338685A patent/JPS61192339A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01245795A (en) * | 1988-03-28 | 1989-09-29 | Daikin Ind Ltd | Electronic silencer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61192339A (en) | 1986-08-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |