JPH01253206A - Method of trimming resistor film - Google Patents
Method of trimming resistor filmInfo
- Publication number
- JPH01253206A JPH01253206A JP63079839A JP7983988A JPH01253206A JP H01253206 A JPH01253206 A JP H01253206A JP 63079839 A JP63079839 A JP 63079839A JP 7983988 A JP7983988 A JP 7983988A JP H01253206 A JPH01253206 A JP H01253206A
- Authority
- JP
- Japan
- Prior art keywords
- resistive film
- resistance value
- electrodes
- notch
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009966 trimming Methods 0.000 title claims abstract description 37
- 238000000034 method Methods 0.000 title claims description 41
- 238000012937 correction Methods 0.000 claims description 24
- 239000000428 dust Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 82
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000012545 processing Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 101100008048 Caenorhabditis elegans cut-4 gene Proteins 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Parts Printed On Printed Circuit Boards (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野コ
本発明は電極間に形成された抵抗膜の一部を除去して該
″:4[’間の抵抗値を修」する抵抗膜のトリミング方
法に関する。Detailed Description of the Invention [Industrial Field of Application] The present invention relates to trimming of a resistive film in which a part of the resistive film formed between electrodes is removed to correct the resistance value between the electrodes. Regarding the method.
[従来の技術]
一般の抵抗素子、可変抵抗素子、ポテンショメータ等の
抵抗体、あるいは、ハイブリッドIC等の集積回路等に
は、絶縁体表面に抵抗性薄膜を形成し、これを電極間に
介在させた抵抗膜が用いられる。[Prior art] For general resistance elements, variable resistance elements, resistors such as potentiometers, or integrated circuits such as hybrid ICs, a resistive thin film is formed on the surface of an insulator and this is interposed between electrodes. A resistive film is used.
通常、この抵抗膜は、前記絶縁体表面に抵抗性薄膜を形
成させただけでは必ずしも所望の抵抗値を得ることがで
きないので、前記薄膜形成後に、該薄膜の一部を除去し
て抵抗値を所望の値に修正するトリミングが方耐される
。Usually, with this resistive film, it is not necessarily possible to obtain the desired resistance value simply by forming a resistive thin film on the surface of the insulator, so after forming the thin film, a part of the thin film is removed to increase the resistance value. Trimming to correct to the desired value is tolerated.
すなわち、一般に、上述のような抵抗膜は、まず、膜の
厚さや面積から大略割り出される抵抗値が常に目的とす
る抵抗値より低い抵抗値となるような薄膜を形成し、し
かる後、前記電極間の抵抗値を測定しながら、目的の抵
抗値となるように、該薄膜の一部を除去するトリミング
を行って所望の抵抗値を得ているものである。That is, in general, in the above-mentioned resistive film, first, a thin film is formed such that the resistance value approximately determined from the thickness and area of the film is always lower than the target resistance value, and then the above-mentioned resistance film is formed. While measuring the resistance value between the electrodes, trimming is performed to remove a part of the thin film to obtain the desired resistance value.
第6図ないし第8図は従来のトリミング方法を施した抵
抗膜を示す図である。FIGS. 6 to 8 are diagrams showing resistive films subjected to the conventional trimming method.
第6図に示される抵抗膜は、従来、最も一般的に行われ
ていた方法を施したものであり、電極1及び2の間に抵
抗膜3を形成し、しかる後、前記電極l及び2の間の抵
抗値を測定しながら、前記電極間距離を定める直線に垂
直な方向の切り込み4を入れ、この切り込み4の延長1
?[[を前記電極間の抵抗値が所望の値となるように調
整するものである。The resistive film shown in FIG. 6 is formed by the conventionally most commonly used method, in which a resistive film 3 is formed between electrodes 1 and 2, and then a resistive film 3 is formed between electrodes 1 and 2. While measuring the resistance value between the electrodes, make a cut 4 in a direction perpendicular to the straight line that defines the distance between the electrodes, and make an extension 1 of this cut 4.
? [[ is adjusted so that the resistance value between the electrodes becomes a desired value.
この方法は、比較的細い切り込み4を入れ、この延長距
離を調整するるだけであるから、除去面積が少なくてす
むとともに、調整の制御も比較的容易であるという利点
を有する。したがって、例えば、比較的小出力のレーザ
装置を用い、レーザビームを数十μm程度の径に集束し
、これを反射鏡を介して前記抵抗膜3の所定部位に照射
し、前記電極間の抵抗値を測定しつつ前記反射jJ1の
設定角を変えることにより、前記照射位置を制御し、こ
れにより、極めて迅速に前記所望の切り込み4を形成す
ることができる。This method has the advantage that only a relatively narrow cut 4 is made and the extension distance is adjusted, so that the area to be removed is small and the adjustment is relatively easy to control. Therefore, for example, using a relatively low output laser device, a laser beam is focused to a diameter of about several tens of μm, and the laser beam is irradiated to a predetermined portion of the resistive film 3 through a reflecting mirror, and the resistance between the electrodes is By changing the set angle of the reflection jJ1 while measuring the value, the irradiation position can be controlled, thereby making it possible to form the desired incision 4 extremely quickly.
しかしながら、この方法で切り込み4が形成された抵抗
膜3に電流を通じた場合、流れる電流は、前記切り込み
4の先端部4aと該切り込み4の延長線とが前記抵抗膜
3の縁と交わる点4bとの間に形成される領域に集中し
、したがって、この部分を流すことがでさる最大の電流
によって前記抵抗膜全体の許容ワット数が規制されてし
まい、該抵抗膜の池の比較的広い面積を有する部分がほ
とんど無駄になるという欠点がある。この点は、例えば
、集積回路の高密度化を行う場合等においては極めて重
大な障害となる。However, when a current is passed through the resistive film 3 in which the notches 4 are formed by this method, the current flows at a point 4b where the tip 4a of the notch 4 and the extension line of the notch 4 intersect with the edge of the resistive film 3. Therefore, the allowable wattage of the entire resistive film is regulated by the maximum current that can flow through this area, and the relatively large area of the resistive film pond is The disadvantage is that most of the parts that have this are wasted. This point becomes an extremely serious obstacle when increasing the density of integrated circuits, for example.
このため、抵抗膜3の面積をできるだけ有効に利用し、
小型で許容マット数の大きい抵抗膜を得る場合には、第
7図に示されるように、前記抵抗膜3の一部の領域5を
除去するという方法が考えられている。Therefore, the area of the resistive film 3 is used as effectively as possible,
In order to obtain a small resistive film with a large allowable matte number, a method has been considered in which a part of the region 5 of the resistive film 3 is removed, as shown in FIG.
また、例えば、ポテンショメータ等のように、移動電極
が通過する曲線上の点と前記一方の電極との距離を横軸
に、これら点と電極との間の抵抗値を縮軸にそれぞれと
った場合、これら距離と抵抗値との関係が、正確に所定
の曲線関f系に々るように形成される抵抗膜を得る場合
においても5前記切り込みを設ける方法は適用できず、
前記一部の領域を除去する方法が適用されていた。For example, in the case of a potentiometer, etc., when the horizontal axis is the distance between the point on the curve through which the moving electrode passes and the one electrode, and the resistance value between these points and the electrode is taken as the reduced axis. Even in the case of obtaining a resistive film in which the relationship between these distances and resistance values accurately conforms to a predetermined curved relationship f, the above-mentioned method of providing notches cannot be applied.
The method of removing the above-mentioned part of the area has been applied.
第8図はポテンショメータの製造の際に行われるトリミ
ング方法を説明するための図である。図において、電極
1と2との間に形成された抵抗膜3上には移動電極6が
設けられている。トリミンクの際には、この移動電極6
と前記一方の電極1との抵抗値を測定しながらこの測定
抵抗値が前記電極6の前記抵抗膜上の各位置において所
定の値となるように前記抵抗膜3の一部領域5が除去さ
れる。すなわち、この作業を前記他方の電極2の近傍ま
で行うことにより所定の抵抗曲線を有するポテンショメ
ータを得るものである。FIG. 8 is a diagram for explaining a trimming method performed when manufacturing a potentiometer. In the figure, a movable electrode 6 is provided on a resistive film 3 formed between electrodes 1 and 2. During trimming, this moving electrode 6
While measuring the resistance value between the electrode 6 and the one electrode 1, a partial region 5 of the resistive film 3 is removed so that the measured resistance value becomes a predetermined value at each position on the resistive film of the electrode 6. Ru. That is, by performing this operation up to the vicinity of the other electrode 2, a potentiometer having a predetermined resistance curve can be obtained.
[発明が解決しようとするH u ]
ところが、前記第7図及び第8図に示される抵抗膜を得
るために実施されるトリミング方法においては、抵抗膜
の除去面積が大きいため、トリミングに著しく長時間を
要するとともに、所望の抵抗値となるように所望の大き
さを有する領域を正確に除去する制御が前記切り込みを
設ける場合に比較して必ずしも容易でないという欠点が
ある。[H u to be Solved by the Invention] However, in the trimming method carried out to obtain the resistive films shown in FIGS. 7 and 8, the removal area of the resistive film is large, so the trimming process takes a considerable amount of time. This method requires time and has the drawback that control to accurately remove a region having a desired size so as to obtain a desired resistance value is not necessarily easier than when the above-mentioned notches are provided.
すなわち、例えば、前記切り込みを設ける方法のように
レーザ光を用いた場合には、除去領域の面積を正確にし
て修正値を所望の抵抗値に正確に合わせるとともに、除
去領域の境界をはっきりさせ、経時邊変化等が生じない
ように、レーザビームの径を小さく絞らなければならず
、これがため、−回のビーム走査で除去できる面積が限
られて多数回の走査が必要になるとともに、各走査の方
向の制御等か困難であった。That is, for example, in the case of using a laser beam as in the method of forming a notch, the area of the removed region is accurately adjusted to accurately match the correction value to the desired resistance value, and the boundary of the removed region is made clear. In order to prevent changes in the area over time, the diameter of the laser beam must be narrowed down, and as a result, the area that can be removed with one beam scan is limited, requiring multiple scans, and each scan It was difficult to control the direction of the
また、前記第8図に示される場合のようにポテンショメ
ータを製作する際のトリミングは、一般に、ドリルによ
る切削法、あるいは、アルミナ粉をノズルから噴出させ
て除去する部分に吹き付けるいわゆるサンド・ブラスト
法等が用いられるが、いずれも加工に時間がかかるとと
もに、加工の際に製品に有害な切削屑や粉塵が多量に発
生し、さらには、加工後の抵抗膜の縁の形状が鋭い突起
等を多数含む複雑なものとなって、この突起部が後で剥
離する等してトラブルの原因となり、また、このような
突起が生じないように、加工ピッチp(第8図参照)を
小さくして加工形状をスムースにしようとすると、加工
時間がさらに長時間になるという欠点を有していた。In addition, trimming when manufacturing a potentiometer as shown in FIG. 8 is generally performed by a cutting method using a drill, or a so-called sand blasting method in which alumina powder is jetted from a nozzle and sprayed onto the area to be removed. However, they all take a long time to process, generate a large amount of cutting chips and dust that are harmful to the product, and also have many sharp protrusions on the edges of the resistive film after processing. These protrusions may peel off later and cause problems, and in order to prevent such protrusions from occurring, the machining pitch p (see Figure 8) should be reduced. Attempting to make the shape smooth has the disadvantage that the processing time becomes even longer.
本発明の目的は、上記欠点を除去した抵抗膜のトリミン
グ方法を提供することにある。An object of the present invention is to provide a method for trimming a resistive film that eliminates the above drawbacks.
[課題を解決するための手段]
本発明は、抵抗膜の除去すべき領域を全て取りさるめで
はなく、該抵抗膜の除去すべき領域を囲む線に沿って鎖
線の少なくとも一部の区間に渡って前記抵抗膜に切り込
みを形成し、前記切り込みを形成する前には前記電極間
の導通に寄与していた前記除去すべき領域が、前記切り
込み形成後には前記導通に寄与しなくなるようにして前
記除去ずべき領域を全て取りさっな場合と同様の効果を
得ることを可能とし、これにより、トリミング時間の著
しい短縮、粉塵等の発生の抑制等を可能にしたもので、
以下の各構成を有する。[Means for Solving the Problems] The present invention does not involve removing the entire region of the resistive film to be removed, but rather removing the entire region of the resistive film along a line surrounding the region of the resistive film to be removed in at least a part of the dashed line. forming a notch in the resistive film across the area, such that the region to be removed, which contributed to conduction between the electrodes before the notch was formed, no longer contributes to the conduction after the notch is formed; It is possible to obtain the same effect as when the entire area to be removed is not removed, thereby making it possible to significantly shorten the trimming time and suppress the generation of dust, etc.
It has the following configurations.
(1)電極間に形成された抵抗膜の一部を除去すること
により前記電極間の抵抗値を修正する抵抗膜のトリミン
グ方法において、
前記抵抗膜の除去すべき領域を囲む線に沿って鎖線の少
なくとも一部の区間に渡って前記抵抗膜に切り込みを形
成し、前記切り込みを形成する前には前記電極間の導通
に寄与していた前記除去すべき領域が、前記切り込み形
成後には前記導通にvr与しなくなるようにして前記電
極間の抵抗値を修正することを特徴とした抵抗膜のトリ
ミング方法。(1) In a resistive film trimming method in which the resistance value between the electrodes is corrected by removing a part of the resistive film formed between the electrodes, a chain line is formed along a line surrounding a region of the resistive film to be removed. A cut is formed in the resistive film over at least a part of the section, and the region to be removed, which contributed to the conduction between the electrodes before the cut was formed, becomes less conductive after the cut is formed. A method for trimming a resistive film, characterized in that the resistance value between the electrodes is modified so that vr is no longer applied to the resistive film.
(2)電極間に形成された抵抗膜の一部を除去すること
により前記電極間の抵抗値を修正する抵抗膜のトリミン
グ方法において、
前記抵抗膜に基準となる単位区間を設け、この油付区間
の抵抗値が基準となる基準単位抵抗値となるように、前
記抵抗膜の前記電極に接続された縁以外の2つの縁のう
ちの一方の縁から、前記抵抗膜の中心部に向かって、前
記区間にまたがる領域を除去した基準切り込みを設け、
次に、前記基準切り込みの先端部から前記電極のうちの
一方の電極に向かって、前記単位区間の区間距離に等し
い単位距離だけ離れた位置まで延長される修正用切り込
みを設け、
次いで、前記抵抗膜の前記修正用切り込みを形成した区
間の抵抗値と前記基準単位抵抗値とを比較し、
しかる後、前記比較結果に基づいて延長方向を定めて前
記修正用切り込みの先端部からさらに単位距離だけ修正
用切り込みを延長し、
以下、前記と同様にこの修正用切り込みを設けた区間の
抵抗値と前記基準単位抵抗値とを比較してこの比較結果
に基づいて延長方向を定めて修正用切り込みを設ける手
順を次々と縁り返して前記抵抗膜の抵抗値の修正を行う
ことを特徴とした抵抗膜のトリミング方法。(2) In a resistive film trimming method in which the resistance value between the electrodes is corrected by removing a part of the resistive film formed between the electrodes, a unit section serving as a reference is provided in the resistive film, From one edge of the two edges of the resistive film other than the edge connected to the electrode toward the center of the resistive film so that the resistance value of the section becomes a reference unit resistance value. , a reference cut is provided by removing a region spanning the section, and then a position is spaced from the tip of the reference cut toward one of the electrodes by a unit distance equal to the section distance of the unit section. Next, the resistance value of the section of the resistive film in which the correction notch is formed is compared with the reference unit resistance value, and then, the direction of extension is determined based on the comparison result. The correction notch is further extended by a unit distance from the tip of the correction notch, and the resistance value of the section where the correction notch is provided is compared with the reference unit resistance value in the same manner as above. A method for trimming a resistive film, characterized in that the resistance value of the resistive film is corrected by determining the extension direction based on the comparison result and reversing the steps of providing correction incisions one after another.
[作用]
上述の構成(1)によれば、前記抵抗膜に除去すべき領
域を囲む線に沿って切り込みを設けると、この切り込み
が設けられた部分が該切り込みを境に一方の部分と他方
の部分との間で電気的に絶縁される。この場合、この切
り込みを設ける区間をある範囲以上にすると、この切り
込みが設けられる前には前記電極間の導通に寄与してい
た前記除去すべき領域が導通に寄与しなくなる。[Function] According to the above configuration (1), when a notch is provided in the resistive film along a line surrounding the area to be removed, the part provided with this notch is separated from the other part with the notch as a boundary. electrically insulated between the In this case, if the section in which the cut is provided exceeds a certain range, the region to be removed, which contributed to the conduction between the electrodes before the cut was provided, no longer contributes to the conduction.
したがって、これにより、前記除去すべき領域全てを取
り去ることなく、前記切り込みを形成するだけで、前記
除去すべき領域全てを取り去った場合と同様の作用を得
ることができる。Therefore, by simply forming the incision without removing the entire area to be removed, it is possible to obtain the same effect as when the entire area to be removed is removed.
また上述の構成(2)によれば、前記基準切り込みの形
成によって、基準単位抵抗値を有する基準となる単位区
間が形成される。Further, according to the above configuration (2), by forming the reference notch, a unit section serving as a reference having a reference unit resistance value is formed.
次に、前記基準切り込みの先端から単位距離だけ修正用
切り込みを形成し、前記基準線から前記修正用切り込み
の先端までの抵抗値を測定する。Next, a correction notch is formed by a unit distance from the tip of the reference notch, and a resistance value from the reference line to the tip of the correction notch is measured.
この場合、前記抵抗膜が−様な抵抗特性を有していると
きは、この測定抵抗値と前記基準単位抵抗値との差の値
がゼロになる筈であり、特性が変化したときは、その特
性の変化に応じた値を示すことになる。In this case, when the resistive film has negative resistance characteristics, the difference between the measured resistance value and the reference unit resistance value should be zero, and when the characteristics change, It will show a value according to the change in its characteristics.
したがって、これらの値を比較し、この比較結果に基づ
いて延長方向を定めて前記修正用切り込みの先端部から
さらに単位距離だけ修正用切り込みを延長すると、この
延長した長さ分の抵抗膜の抵抗値は前記特性の変化分が
加味されたものとなる。Therefore, if these values are compared, the extension direction is determined based on the comparison result, and the correction notch is further extended by a unit distance from the tip of the correction notch, the resistance of the resistive film will be increased by this extended length. The value takes into account the change in the characteristics.
したがって、前記構成のように、前記と同様のの手順を
次々と繰り返して前記抵抗膜の抵抗値の修正を行うこと
により、前記抵抗股上において一方の電極から他方の電
極に向かう直線上の各点と前記一方の電極との距離を横
軸に、これら点と電極との間の抵抗値を縦軸にそれぞれ
とった場合、これら距離と抵抗値との関係が、正確に所
定の曲線関係になるように形成された抵抗膜を比較的迅
速かつ容易に得ることができる。Therefore, as in the above configuration, by repeating the same steps as above one after another to correct the resistance value of the resistive film, each point on the straight line from one electrode to the other electrode in the resistance rise can be adjusted. If the distance between and the one electrode is plotted on the horizontal axis, and the resistance value between these points and the electrode is plotted on the vertical axis, the relationship between these distances and the resistance value will be exactly a predetermined curved relationship. A resistive film formed in this manner can be obtained relatively quickly and easily.
[実施例]
第1図は本発明の請求項(1)に対応する実施例にかか
る抵抗膜のトリミング方法を説明するための図である。[Example] FIG. 1 is a diagram for explaining a method for trimming a resistive film according to an example corresponding to claim (1) of the present invention.
第1図において、符号11及び12が電極であり、符号
13が前記電極11及び12の間に形成された抵抗膜で
ある。In FIG. 1, numerals 11 and 12 are electrodes, and numeral 13 is a resistive film formed between the electrodes 11 and 12.
この実施例のトリミング方法は、前記抵抗膜13に切り
込み14を形成して除去すべき領域15を全て取り去っ
た場合と同じ効果を得るものであり、以下の手順で行う
。The trimming method of this embodiment obtains the same effect as when the cut 14 is formed in the resistive film 13 and the entire region 15 to be removed is removed, and is carried out in the following steps.
まず、前記電極11及び12の間の抵抗値を監視しつつ
、前記抵抗膜13の一方の縁部から前記電極間距離を定
める直線に垂直な方向に向かって切り込み14aを形成
する。First, while monitoring the resistance value between the electrodes 11 and 12, a cut 14a is formed from one edge of the resistive film 13 in a direction perpendicular to the straight line defining the distance between the electrodes.
この場合、この切り込み14aの長さは、この切り込み
を所定のわずかな距離だけ形成したときに、前記電極間
の抵抗がどの程度変化したかを観測し、その結果に基づ
いて、この切り込みを前記電極間において平行移動させ
たときに、この切り込みが通過する領域を全部除去した
場合に前記電極間の抵抗値がほぼ目的とする抵抗値にな
るような長さを概略算出し、その算出値にしたがった長
さに形成する。In this case, the length of this notch 14a is determined by observing how much the resistance between the electrodes changes when this notch is formed by a predetermined short distance, and based on the result. Roughly calculate the length such that when the electrodes are moved in parallel and the entire area through which this cut passes is removed, the resistance value between the electrodes becomes approximately the desired resistance value, and the calculated value is Form it to the desired length.
前記切り込み14aが所定の長さになったら、次に、切
り込みの方向を変えて、前記電極間距離を定める直線と
平行な方向にし、切り込み14bを形成する。この切り
込み14bは、前記電極1mの抵抗値を監視しつつ延長
し、その抵抗値が正確に目的とする抵抗値となる長さと
する。When the cut 14a has a predetermined length, the direction of the cut is changed to be parallel to the straight line defining the distance between the electrodes, thereby forming a cut 14b. This cut 14b is extended while monitoring the resistance value of the electrode 1m, and is set to a length such that the resistance value accurately reaches the desired resistance value.
これにより、前記電極11と12との間の抵抗値が目的
とする抵抗値となった抵抗膜13を得ることができる。Thereby, it is possible to obtain a resistive film 13 in which the resistance value between the electrodes 11 and 12 becomes the desired resistance value.
なお、その際、第1図における点線で示される切り込み
14cを設けて前記除去すべきgrt域15を完全に島
状に形成すれば、迷電流等によるトラブルが生じるおそ
れを完全に除去できる。In this case, if the cut 14c shown by the dotted line in FIG. 1 is provided to completely form the grt region 15 to be removed into an island shape, it is possible to completely eliminate the possibility of troubles caused by stray current or the like.
この実施例によれば、前記切り込み14を形成するだけ
で、該切り込み14で囲まれる領域15の全ての部分を
取り去った場合と同様に抵抗値修正効果が得られる。According to this embodiment, just by forming the notch 14, the same resistance value modification effect can be obtained as in the case where the entire region 15 surrounded by the notch 14 is removed.
これにより、トリミングを、%Jえば、前記レ−ザ法等
により極めて迅速かつ容易に行うことを可能にする。This makes it possible to perform trimming extremely quickly and easily using the laser method or the like described above.
また、このトリミングの際に粉塵等の発生を著しく抑え
ることができる。Furthermore, generation of dust and the like can be significantly suppressed during this trimming.
第2図及び第3図は本発明の請求項(2)に対応する実
施例にかかる抵抗膜のトリミング方法を説明するための
図である。FIGS. 2 and 3 are diagrams for explaining a method for trimming a resistive film according to an embodiment corresponding to claim (2) of the present invention.
図において、符号21及び22が電極であり、符号23
がこれら電[21及び22の間に形成された抵抗膜であ
る。In the figure, numerals 21 and 22 are electrodes, and numeral 23
is a resistive film formed between these electrodes [21 and 22].
この実施例のトリミング方法は、例えばポテンショメー
タ等の製作の際に適用できる例であり、前記抵抗膜23
に切り込み24を形成し、除去すべき領域25を全て取
り去った場合と同じ効果を得、これにより、一方の電極
21から他方の電極22に向かう移動型@26と前記一
方の電[!21との距離X(回転式ポテンショメータの
場合には電極間の距離の代わりに、通常、両電極のなす
角度θで表す)を横軸に、これら移動型f!26と前記
電極21との間の抵抗値Rを縦軸にそれぞれとった場合
、これら距MX(θ)と抵抗iRとの関係が、正確に所
望の曲線関係(例えば、R=aXまたはR=aθで表さ
れる直線間係:ここで、aは定数)となるように形成さ
れる抵抗膜を得るものであり、以下の手順で行う。The trimming method of this embodiment is an example that can be applied when manufacturing a potentiometer, etc.
A cut 24 is formed in the area 24 to obtain the same effect as when all the area 25 to be removed is removed, and thereby the movable type @26 moves from one electrode 21 to the other electrode 22 and the one electrode [! These moving type f! 26 and the electrode 21 on the vertical axis, the relationship between these distances MX(θ) and the resistance iR is exactly the desired curved relationship (for example, R=aX or R= The purpose is to obtain a resistive film formed so as to have a linear coefficient represented by aθ (where a is a constant), and the following steps are performed.
まず、前記一方の電極21の図中右方側の縁を含む直1
aSと、この直線Sから前記T4’fflのうちの他方
の電f!22に向かって単位距離ΔX(回転式ポテンシ
ョメータの場合にはΔθで表す)だけ離れた区間を基準
単位区間とし、前記抵抗膜23の前記型f!21.22
に接続された縁以外の2つの縁のうちの一方の縁(図中
下方に位置する縁)から、前記抵抗膜23の中心°部に
向かって、前記区間にまたがる領域を除去することによ
り、基準切り込み24aを設け、この基準切り込み24
aの延長距離を調整することにより、前記基準単位区間
ΔX(Δθ)の抵抗値が基準単位抵抗値Δrとなるよう
にする。First, a straight line including the edge on the right side in the figure of the one electrode 21 is shown.
aS and the other electric current f! of the T4'ffl from this straight line S! 22 by a unit distance ΔX (represented by Δθ in the case of a rotary potentiometer) as a reference unit interval, and the type f! of the resistive film 23 is defined as a reference unit interval. 21.22
By removing a region spanning the section from one edge (the edge located at the bottom in the figure) of the two edges other than the edge connected to the resistive film 23 toward the center part of the resistive film 23, A reference cut 24a is provided, and this reference cut 24
By adjusting the extension distance of a, the resistance value of the reference unit section ΔX (Δθ) is made to become the reference unit resistance value Δr.
この作業は、前記移動電極26を前記基準!lSからΔ
X離れた位置に設定してこれらの間の抵抗値を監視しな
がら前記抵抗WA23に加工用レーザ光を照射して前記
区間の抵抗膜を少しずつ除去していき、この作業を前記
区間の抵抗値が基準単位抵抗値Δrになるまで続けるこ
とにより行う。This work uses the moving electrode 26 as the reference! Δ from lS
The resistor WA23 is set at a position X apart and the resistance value between them is monitored while the resistor WA23 is irradiated with a processing laser beam to remove the resistive film in the section little by little. This is performed by continuing until the value reaches the reference unit resistance value Δr.
このとき、前記単位距離ΔX(Δθ)及び基準単位抵抗
値Δrは、例えば、前記電極間に形成された抵抗膜の長
さをXO(回転式ポテンショメータの場合にはθ0で表
す)、これら電極間の目標とする抵抗値をRQとし、さ
らに、前記一方の電極21と移動電極26との間の抵抗
値が、これら電極間距離に対して直線関係を有するもの
であるとする場合を考えると、前述の直線関係の場合の
式R=aX (または、R=aθ)におけるaが、a=
Ro/XO(または、a=Ro /θ0)となり、かつ
、R=Δr、X=ΔX(または、θ=Δθ)であるから
、Δr=aΔx=RO/XO・ΔX(または、Δr=a
Δθ=RO/θ0・Δθ)の関係を有することになる。At this time, the unit distance ΔX (Δθ) and the reference unit resistance value Δr are, for example, the length of the resistive film formed between the electrodes XO (represented by θ0 in the case of a rotary potentiometer), and the distance between these electrodes. Let the target resistance value be RQ, and further assume that the resistance value between the one electrode 21 and the moving electrode 26 has a linear relationship with the distance between these electrodes, In the case of the above-mentioned linear relationship, a in the equation R=aX (or R=aθ) is a=
Since Ro/XO (or a=Ro/θ0) and R=Δr, X=ΔX (or θ=Δθ), Δr=aΔx=RO/XO・ΔX (or Δr=a
The relationship is Δθ=RO/θ0·Δθ).
したがって、例えば、目標とする抵抗値ROが5000
Ωで、両電極のなす角度(=移動電極の最大回転角)θ
0が351°である回転式ポテンショメータを製作する
場合は、a=Ro /θ0=5000Ω/351°=1
4.2Ω10となる。いま、基準単位区間を、Δθ=2
°に選定してトリミングを行うとすれば、前記基準単位
抵抗値Δr=aΔθ=RO/θ0 ・Δθ= 14.2
Ω/” X2 ’ =28.4Ωとなる。Therefore, for example, if the target resistance value RO is 5000
Ω, the angle formed by both electrodes (= maximum rotation angle of the moving electrode) θ
When manufacturing a rotary potentiometer where 0 is 351°, a=Ro/θ0=5000Ω/351°=1
4.2Ω10. Now, the reference unit interval is Δθ=2
If trimming is performed by selecting the reference unit resistance value Δr=aΔθ=RO/θ0 ・Δθ= 14.2
Ω/”X2′=28.4Ω.
このようにして基準切り込み24aを形成したら、次に
、該基準切り込み24aの延長方向の先端部から前記電
極間距離を定める直線に平行に前記他方の電極22に向
かって前記単位距離ΔX(Δθ)だけ離れた位置まで延
長される修正用切り込み24bを形成する。After forming the reference cut 24a in this way, next, the unit distance ΔX (Δθ) is set from the tip of the reference cut 24a in the extending direction toward the other electrode 22 in parallel to the straight line that determines the inter-electrode distance. A correction notch 24b is formed that extends to a position separated by the same amount.
次いで、前記移動電極26を移動して前記基準線Sから
前記修正用切り込み24bの先端までの抵抗値R1を測
定し、この測定抵抗値R1と前記基準単位抵抗値Δrと
の差Δriを求める。Next, the movable electrode 26 is moved to measure the resistance value R1 from the reference line S to the tip of the correction notch 24b, and the difference Δri between this measured resistance value R1 and the reference unit resistance value Δr is determined.
次に、この差の値Δr11と前記基準単位抵抗値Δrと
を比較し、この比較結果に基づいて延長方向を定めて前
記修正用切り込みの先端部からさらに単位距離ΔXだけ
修正用切り込み24bを延長する。Next, this difference value Δr11 is compared with the reference unit resistance value Δr, an extension direction is determined based on the comparison result, and the correction notch 24b is further extended by a unit distance ΔX from the tip of the correction notch. do.
すなわち、前記比較の結果、前記差の値Δr11が一定
範囲以下の場合は前記修正用切り込み24aの延長方向
と同じ方向(第3図中矢印Fで示される方向)に延長し
、また、この差の値Δr11が前記基準単位抵抗値Δr
よりも一定値以上大きい場合には、前記抵抗膜23の抵
抗値を小さくする方向(第3図中矢印Uで示される方向
)に延長し、さらに、この差の値ΔrlがΔrより一定
値以上小さい場合には、前記抵抗膜23の抵抗値を大き
くする方向(第3図中矢印りで示される方向)にそれぞ
れ延長する。That is, as a result of the comparison, if the difference value Δr11 is below a certain range, the correction notch 24a is extended in the same direction (direction indicated by arrow F in FIG. 3), and this difference is The value Δr11 is the reference unit resistance value Δr
If the resistance value of the resistive film 23 is larger than Δr by a certain value or more, the resistance value of the resistive film 23 is extended in the direction shown by the arrow U in FIG. If the resistance value of the resistance film 23 is small, it is extended in the direction of increasing the resistance value of the resistance film 23 (the direction indicated by the arrow in FIG. 3).
例えば、前述の回転式ポテンショメータの場合において
、前記一定の範囲の値を、基準単位抵抗値Δr(=28
.4Ω)の±1%とした場合には、前記差の値Δr1の
値と延長方向とは以下のようになる。For example, in the case of the above-mentioned rotary potentiometer, the value in the certain range is set to the reference unit resistance value Δr (=28
.. 4Ω), the value of the difference Δr1 and the direction of extension are as follows.
28.7Ω≧八r11≧28.1ΩのときF方向Δr1
1<28.1ΩのときD方向
Δr11>28.7ΩのときU方向
以゛下、同様にしてこの手順を前記他方の電極22の近
傍に至るまで次々と繰り返すことにより、所望の直線性
及び所定の抵抗値(5000Ω)を有する抵抗膜を得る
ことができる。なお、必要に応じ、所定の抵抗値となっ
た後、前記修正用切り込みを前記抵抗j模の一方の縁ま
で延長して前記除去すべき部分を完全に島状に形成する
。When 28.7Ω≧8r11≧28.1Ω, F direction Δr1
When 1<28.1Ω, the D direction When Δr11>28.7Ω, the U direction and below. By repeating this procedure one after another until reaching the vicinity of the other electrode 22, the desired linearity and predetermined linearity can be achieved. A resistive film having a resistance value (5000Ω) can be obtained. Note that, if necessary, after a predetermined resistance value is reached, the correction notch is extended to one edge of the resistor j pattern to completely form the portion to be removed into an island shape.
なお、上述の実論例のような手順を実行する装置として
は、例えば、前記切り込み24を形成するための加工用
レーザ装β、前記各抵抗値を測定する抵抗値測定装置、
前記抵抗膜23を支持して前記加工用レーザ装置のし゛
−ザビームを該抵抗膜23の所望の位置に正確に合わせ
ることができる移動自在なステージ、該ステージを駆動
する駆動装置並びにこれらレーザ装置、抵抗ffi測定
装置、ステージ駆動装置等をコントロールし、あるいは
、一定の演算処理を行って前記手順を遂行するプログラ
ムが入力されているマイクロコンピュータ等を内蔵する
制御装置を備えた装置をあげることができる。Note that the apparatus for executing the procedure in the above-mentioned practical example includes, for example, a processing laser device β for forming the notch 24, a resistance value measuring device for measuring each of the resistance values,
A movable stage that supports the resistive film 23 and can accurately align the laser beam of the processing laser device to a desired position on the resistive film 23, a drive device that drives the stage, and these laser devices; Examples include a device equipped with a control device that controls a resistance ffi measuring device, a stage driving device, etc., or has a built-in microcomputer or the like into which a program is input to perform certain arithmetic processing and carry out the above steps. .
第4図は、本発明者等が前記第2実施例の方法を遂行す
る装置を製作して実際に前記回転式ポテンショメータの
窒化タンタル抵抗膜のトリミングを試みた結果の一例を
示すグラフである。FIG. 4 is a graph showing an example of the results obtained when the present inventors fabricated an apparatus for carrying out the method of the second embodiment and actually attempted to trim the tantalum nitride resistive film of the rotary potentiometer.
すなわち、第4図において、縦軸が目標とする抵抗直線
(R=aθ)に対して実際に得られた抵抗膜の抵抗値の
ずれ幅(各位置での目標抵抗値を最小二乗法で近似して
求め、この目標抵抗値に対して実際に得られた抵抗膜の
抵抗値のずれ幅をパーセンテージで示している)であり
、横軸が電極間における抵抗膜の位置を角度(θdeg
)で示したものである。In other words, in Fig. 4, the vertical axis represents the deviation width of the resistance value of the resistive film actually obtained with respect to the target resistance straight line (R = aθ) (the target resistance value at each position is approximated by the least squares method). The horizontal axis represents the position of the resistive film between the electrodes as an angle (θdeg
).
また、第5図は、比較のために、前記第2実施例と同様
の抵抗膜を前記従来のトリミング方法であるドリルによ
る切削法によってトリミングした場合の結果を、前記第
4図のグラフと同様に示したものである。For comparison, FIG. 5 shows the results when the same resistive film as in the second embodiment was trimmed by the conventional trimming method using a drill, similar to the graph in FIG. 4. This is shown in .
上述の各結果から明らかなように、抵抗の直線性につい
ては、両者はほとんど同じ精度を有している。As is clear from the above results, both have almost the same precision in terms of resistance linearity.
ところが、トリミングに要した時間は前記第5図に示さ
れる従来例の場合は、約15分要したのに対し、第4図
に示される本実施例では、80m Jのエネルギーで4
Hzの高繰り返し照射のレーザ装置を用いることにより
約4分30秒で行うことができた。However, the time required for trimming was approximately 15 minutes in the case of the conventional example shown in FIG. 5, whereas in the present example shown in FIG.
By using a laser device with high repetition rate irradiation of Hz, it was possible to carry out the process in about 4 minutes and 30 seconds.
さらに、前記従来例では、トリミングの際、多量の切削
屑が発生したのに対し、本実施例では、はとんど粉塵ら
しい粉塵を認めることができなかった。Furthermore, in the conventional example, a large amount of cutting waste was generated during trimming, whereas in this example, hardly any dust-like dust could be observed.
[発明の効果]
以上詳述したように、本発明は、抵抗膜の除去すべき領
域を全て取りさるのではなく、該抵抗膜の除去すべき領
域を囲む線に沿って鎖線の少なくとも一部の区間に渡っ
て前記抵抗膜に切り込みを形成し、前記切り込みを形成
する前には前記電極間の導通に寄手していた前記除去す
べき領域が、前記切り込み形成後には前記導通に寄与し
なくなるようにして前記除去すべき領域を全て取りさっ
た場合と同様の効果を得ることを可能とし、これにより
、トリミング時間の著しい短縮、粉塵等の発生の抑制等
を可能にしたものである。[Effects of the Invention] As described in detail above, the present invention does not remove the entire region of the resistive film to be removed, but removes at least part of the chain line along the line surrounding the region of the resistive film to be removed. A notch is formed in the resistive film over a section of This makes it possible to obtain the same effect as when all the areas to be removed are removed, thereby making it possible to significantly shorten the trimming time and suppress the generation of dust and the like.
第1図は本発明の第1実施例にかかる抵抗膜のトリミン
グ方法を説明するための図、第2図及び第3図は本発明
の第2実施例にかかる抵抗膜のトリミング方法を説明す
るための図、第4図は本発明者等が第2実施例の方法を
遂行する装置を製作して実際に前記回転式ポテンショメ
ータの抵抗膜のトリミングを試みた結果の一例を示すグ
ラフ、第5図は比較のために前記第2実施例と同様の抵
抗膜を従来のトリミング方法であるドリルによる切削法
によってトリミングした場合の結果を前記第4図のグラ
フと同様に示したグラフ、第6図ないし第8図は本発明
の従来例を示す図である。
11.12,21.22・・・電極、13.23・・・
抵抗膜、14.24・・・切り込み、24a・・・基準
切り込み、14b、24b・・・修正用切り込み、15
.25・・・修正用切り込み、26・・・移動電極、Δ
X・・・単位距漏。FIG. 1 is a diagram for explaining a method for trimming a resistive film according to a first embodiment of the present invention, and FIGS. 2 and 3 are diagrams for explaining a method for trimming a resistive film according to a second embodiment of the present invention. FIG. 4 is a graph showing an example of the results of actually attempting to trim the resistive film of the rotary potentiometer by the inventors of the present invention by fabricating an apparatus for carrying out the method of the second embodiment. For comparison, the figure is a graph showing the results of trimming a resistive film similar to that of the second embodiment using a conventional trimming method using a drill, similar to the graph of FIG. 4, and FIG. 8 to 8 are diagrams showing conventional examples of the present invention. 11.12, 21.22... electrode, 13.23...
Resistive film, 14. 24... Notch, 24a... Reference notch, 14b, 24b... Correction notch, 15
.. 25... Correction notch, 26... Moving electrode, Δ
X...Unit distance leakage.
Claims (2)
により前記電極間の抵抗値を修正する抵抗膜のトリミン
グ方法において、 前記抵抗膜の除去すべき領域を囲む線に沿って該線の少
なくとも一部の区間に渡って前記抵抗膜に切り込みを形
成し、前記切り込みを形成する前には前記電極間の導通
に寄与していた前記除去すべき領域が、前記切り込み形
成後には前記導通に寄与しなくなるようにして前記電極
間の抵抗値を修正することを特徴とした抵抗膜のトリミ
ング方法。(1) A resistive film trimming method in which the resistance value between the electrodes is corrected by removing a part of the resistive film formed between the electrodes, in which the resistive film is trimmed along a line surrounding the area to be removed of the resistive film. A cut is formed in the resistive film over at least a part of the line, and the region to be removed, which contributed to conduction between the electrodes before the cut was formed, is removed from the region after the cut is formed. A method for trimming a resistive film, comprising modifying the resistance value between the electrodes so that it no longer contributes to conduction.
により前記電極間の抵抗値を修正する抵抗膜のトリミン
グ方法において、 前記抵抗膜に基準となる単位区間を設け、この単位区間
の抵抗値が基準となる基準単位抵抗値となるように、前
記抵抗膜の前記電極に接続された縁以外の2つの縁のう
ちの一方の縁から、前記抵抗膜の中心部に向かって、前
記区間にまたがる領域を除去した基準切り込みを設け、 次に、前記基準切り込みの先端部から前記電極のうちの
一方の電極に向かって、前記単位区間の区間距離に等し
い単位距離だけ離れた位置まで延長される修正用切り込
みを設け、 次いで、前記抵抗膜の前記修正用切り込みを形成した区
間の抵抗値と前記基準単位抵抗値とを比較し、 しかる後、前記比較結果に基づいて延長方向を定めて前
記修正用切り込みの先端部からさらに単位距離だけ修正
用切り込みを延長し、 以下、前記と同様にこの修正用切り込みを設けた区間の
抵抗値と前記基準単位抵抗値とを比較してこの比較結果
に基づいて延長方向を定めて修正用切り込みを設ける手
順を次々と繰り返して前記抵抗膜の抵抗値の修正を行う
ことを特徴とした抵抗膜のトリミング方法。(2) A resistive film trimming method in which the resistance value between the electrodes is corrected by removing a part of the resistive film formed between the electrodes, wherein a unit section serving as a reference is provided in the resistive film, and the unit section is from one edge of the two edges of the resistive film other than the edge connected to the electrode toward the center of the resistive film so that the resistance value becomes a reference unit resistance value, A reference cut is provided in which a region spanning the section is removed, and then a reference cut is provided from the tip of the reference cut toward one of the electrodes to a position separated by a unit distance equal to the section distance of the unit section. providing a correction cut to be extended; then comparing the resistance value of the section of the resistive film in which the correction cut is formed with the reference unit resistance value; and then determining the direction of extension based on the comparison result. The correction notch is further extended by a unit distance from the tip of the correction notch, and the resistance value of the section where the correction notch is provided is compared with the reference unit resistance value in the same manner as above. A method for trimming a resistive film, characterized in that the resistance value of the resistive film is corrected by successively repeating the steps of determining the extension direction and providing correction incisions based on the results.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63079839A JPH01253206A (en) | 1988-03-31 | 1988-03-31 | Method of trimming resistor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63079839A JPH01253206A (en) | 1988-03-31 | 1988-03-31 | Method of trimming resistor film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01253206A true JPH01253206A (en) | 1989-10-09 |
Family
ID=13701375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63079839A Pending JPH01253206A (en) | 1988-03-31 | 1988-03-31 | Method of trimming resistor film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01253206A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6462304B2 (en) * | 1997-07-22 | 2002-10-08 | Rohm Co., Ltd. | Method of laser-trimming for chip resistors |
| US6480092B1 (en) * | 1995-02-21 | 2002-11-12 | Murata Manufacturing Co., Ltd. | Resistor trimming method |
-
1988
- 1988-03-31 JP JP63079839A patent/JPH01253206A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6480092B1 (en) * | 1995-02-21 | 2002-11-12 | Murata Manufacturing Co., Ltd. | Resistor trimming method |
| US6462304B2 (en) * | 1997-07-22 | 2002-10-08 | Rohm Co., Ltd. | Method of laser-trimming for chip resistors |
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