JPH01258433A - Formation of silicon nitride film - Google Patents
Formation of silicon nitride filmInfo
- Publication number
- JPH01258433A JPH01258433A JP8646788A JP8646788A JPH01258433A JP H01258433 A JPH01258433 A JP H01258433A JP 8646788 A JP8646788 A JP 8646788A JP 8646788 A JP8646788 A JP 8646788A JP H01258433 A JPH01258433 A JP H01258433A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction tube
- wafers
- silicon nitride
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 4
- 230000007547 defect Effects 0.000 abstract description 8
- 229910003826 SiH3Cl Inorganic materials 0.000 abstract description 3
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 7
- 239000003921 oil Substances 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000255925 Diptera Species 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＬＳＩ等半導体素子製造プロセスにおいて用
いられる窒化シリコン膜の生成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for producing a silicon nitride film used in a process for manufacturing semiconductor devices such as LSI.
ＬＳＩ等半導体素子の製造プロセスにおいては、Ｓｉ等
のウェーハ（基板）上に窒化シリコン（ＳｉＮ）膜を生
成する工程がある。これは通常、減圧ＣＶＤ法が用いら
れる。減圧ＣＶＤを行うための装置としては、第２図示
のようなホットウォール型の装置が、量産性に優れてい
ることから最も一般的に使用されている。In the manufacturing process of semiconductor devices such as LSIs, there is a step of forming a silicon nitride (SiN) film on a wafer (substrate) of Si or the like. A low pressure CVD method is usually used for this purpose. As an apparatus for performing low pressure CVD, a hot wall type apparatus as shown in the second figure is most commonly used because it is excellent in mass productivity.
この装置によりＳｉＮ膜を生成するには、まず、多数の
ウェーハ１を石英製のポート２に立てて並べ、石英製の
反応管３内に挿入する。ウェーハ１は、反応管３の外周
に配置されたヒータ４により、６００〜９００℃程度′
の一定温度に加熱される。反応管３内を真空ポンプ５（
ロータリーポンプ等）により真空引きした後、反応管入
口部からＮＨ３（アンモニア）ガスを、また、反応管入
口部より反応管内部に向かってのばしたノズル６からは
５ｉ）ＩｚＣｌ ｚ（ジクロロシラン）ガスを、流量調
整器７を通して導入する。そして反応管３内の圧力を０
．１〜５Ｔｏｒｒ程度の一定圧力に保つことにより、ウ
ェーハ１の表面に５ｉＮ（窒化シリコン）膜を生成する
。このような方法で作られたＳｉＮ膜は、膜質が緻密で
、しかも極めて均一性の良い膜圧分布が多数枚のつ工−
ハｌについて容易に得ることができるので広く用いられ
ている。To generate a SiN film using this apparatus, first, a large number of wafers 1 are lined up in a quartz port 2 and inserted into a quartz reaction tube 3. The wafer 1 is heated to approximately 600 to 900°C by a heater 4 placed around the outer periphery of the reaction tube 3.
heated to a constant temperature. A vacuum pump 5 (
After vacuuming with a rotary pump, etc.), NH3 (ammonia) gas is supplied from the inlet of the reaction tube, and 5i) IzCl z (dichlorosilane) is supplied from the nozzle 6 extending from the inlet of the reaction tube toward the inside of the reaction tube. Gas is introduced through a flow regulator 7. Then, the pressure inside the reaction tube 3 is reduced to 0.
．． A 5iN (silicon nitride) film is formed on the surface of the wafer 1 by maintaining a constant pressure of about 1 to 5 Torr. The SiN film made by this method has a dense film quality and an extremely uniform film pressure distribution that can be applied to many pieces of wood.
It is widely used because it can be easily obtained.
しかしながらこの方法では、反応副生成物として多量の
ＮＨ，ＣＩ （塩化アンモニウム）も同時に生成され
る。これは常温で固体であり、反応管３内の低温部や排
気配管８の内壁に付着したり、真空ポンプ５のオイルに
混入したりする。反応管３内に付着したＮＨａＣｌは、
反応管３内の圧力変動等によって剥離し、ウェーハ１の
表面に付着してＳｉＮ膜に欠陥を生ずる。このような欠
陥はウェーハの歩留まりを低下させるため、ＮＨａＣ１
の付着はできるだけ少なくする必要がある。また、真空
ポンプ５のオイルに混入したＮＨａＣ１は、オイルを劣
化させ、真空ポンプ５の故障の原因となる。そのため従
来は、オイルを頻繁に交換したり、フィルタによる濾過
をｊテったりする必要があり、メンテナンスが煩雑にな
るという課題があった。However, in this method, large amounts of NH and CI (ammonium chloride) are also produced as reaction by-products. This is solid at room temperature, and may adhere to the low-temperature part of the reaction tube 3 or the inner wall of the exhaust pipe 8, or get mixed into the oil of the vacuum pump 5. NHaCl attached inside the reaction tube 3 is
It peels off due to pressure fluctuations in the reaction tube 3 and adheres to the surface of the wafer 1, causing defects in the SiN film. Since such defects reduce wafer yield, NHaC1
Adhesion must be minimized as much as possible. Further, NHaC1 mixed into the oil of the vacuum pump 5 deteriorates the oil and causes the vacuum pump 5 to malfunction. Therefore, in the past, it was necessary to frequently change the oil and filtration with a filter, which caused the problem of complicated maintenance.
ＳｉＮ膜を生成する他の方法として、ＳｉＨ＊ （モノ
シラン）ガスとＮＨ，ガスの反応を用いる方法がある。Another method for producing a SiN film is a method using a reaction between SiH* (monosilane) gas and NH gas.
この方法は原料ガスにＣ２成分を含まないため、Ｎ８４
Ｃ１は発生しない。従って、欠陥の極めて少ないＳｉＮ
膜が容易に得られ、また真空ポンプ５のメンテナンスも
容易であるという利点がある。This method does not contain C2 components in the raw material gas, so N84
C1 does not occur. Therefore, SiN with extremely few defects
There are advantages in that a membrane can be easily obtained and maintenance of the vacuum pump 5 is also easy.
しかしながら、５ｉＨａガスとＮＨ３ガスで第２図のよ
うな減圧ＣＶＤ装置を用いてＳｉＮ膜を生成する場合は
、均一なウェーハ面内膜厚分布を得ることが困難である
。However, when producing a SiN film using a low pressure CVD apparatus as shown in FIG. 2 using 5iHa gas and NH3 gas, it is difficult to obtain a uniform film thickness distribution within the wafer surface.
そこで、第３図に一例として示すように、反応管部構造
の工夫が必要である。第３図において、ウェーハ１はポ
ート２の上に直接立てられるのではなく、まず、ポート
２の上にウェーハ１よりも直径の大きな円板状のウェー
ハホルダ９が配置され、その両面にウェーハ１が保持さ
れる。このような方法を用いることにより均一なウェー
ハ面内膜厚分布が得られるが、ウェーハとウェーハの間
隔を広くとる必要があり、チャージ枚数が少なくなるた
め、スループットは大幅に低下する。また、構造が複雑
になるため作業も煩雑になるという課題があった。Therefore, as shown in FIG. 3 as an example, it is necessary to devise a structure for the reaction tube. In FIG. 3, the wafer 1 is not placed directly on the port 2, but a disk-shaped wafer holder 9 with a larger diameter than the wafer 1 is placed above the port 2, and the wafer 1 is placed on both sides of the wafer holder 9. is retained. By using such a method, a uniform in-plane film thickness distribution on the wafer can be obtained, but the distance between the wafers needs to be wide, and the number of wafers to be charged is reduced, resulting in a significant decrease in throughput. Another problem was that the structure was complicated, making the work complicated.
本発明は、膜厚の均一性が良く、しかも欠陥の少ないＳ
ｉＮ膜を、装置のメンテナンスの容易な方法で得ること
を目的とする。The present invention provides S with good film thickness uniformity and fewer defects.
The purpose of this invention is to obtain an iN film using a method that allows easy maintenance of the device.
本発明方法は上記の課題を解決し、上記の目的を達成す
るため、第１図示のように反応管３内に多数のウェーハ
Ｉを載置したポート２を搬入し、反応管３内の圧力を０
．１〜５ Ｔｏｒｒの範囲の一定圧力に保ち、ウェーハ
１の温度を ６００〜９００℃の範囲の一定温度に保っ
て原料ガスを反応管３内に導入し、ウェーハ１上に窒化
シリコン膜を生成する方法において、原料ガスとして５
ｉＨ３（Ｊ （モノクロロシラン）ガスとＮＨ３（ア
ンモニア）ガスを用いることを特徴とするものである。In order to solve the above-mentioned problems and achieve the above-mentioned object, the method of the present invention carries in a port 2 on which a large number of wafers I are placed into a reaction tube 3 as shown in the first diagram, and the pressure inside the reaction tube 3 is 0
．． The raw material gas is introduced into the reaction tube 3 while maintaining a constant pressure in the range of 1 to 5 Torr and the temperature of the wafer 1 at a constant temperature in the range of 600 to 900°C, and a silicon nitride film is produced on the wafer 1. In the method, 5 as the raw material gas
This method is characterized by using iH3 (J (monochlorosilane) gas and NH3 (ammonia) gas).
反応管３内に多数のウェーハ１をＲ置したポート２を搬
入し、反応管３内の圧力を０．１〜５ Ｔｏｒｒの範囲
の一定圧力に保ち、ウェーハ１の温度を６００〜９００
℃の範囲の一定温度に保ってＳｉＨ，Ｃ１ガスとＮＨ，
ガスを反応管３内に導入すると、多数のウェーハ１の表
面にＳｉＮ膜が生成される。Port 2 with a large number of wafers 1 placed R is carried into the reaction tube 3, the pressure inside the reaction tube 3 is maintained at a constant pressure in the range of 0.1 to 5 Torr, and the temperature of the wafers 1 is set to 600 to 900 Torr.
SiH, C1 gas and NH, kept at a constant temperature in the range of °C.
When gas is introduced into the reaction tube 3, SiN films are generated on the surfaces of many wafers 1.
以下図面に基づいて本発明の詳細な説明する。 The present invention will be described in detail below based on the drawings.
第１図は本発明方法で使用する減圧ＣＶＤ装置の一例を
示す説明図である。FIG. 1 is an explanatory diagram showing an example of a reduced pressure CVD apparatus used in the method of the present invention.
第１図中、３は石英製の反応管、２はこの反応管３内に
搬入された石英製のポート、１はこのポート２に立てて
並べられた多数枚のウェーハ、４は反応管３内の多数枚
のウェーハ１を加熱するためのヒータ、５は反応管３内
を排気配管８を介して排気する真空ポンプ、６はノズル
、７は流量調整器である。In FIG. 1, 3 is a quartz reaction tube, 2 is a quartz port carried into this reaction tube 3, 1 is a large number of wafers lined up in this port 2, and 4 is a reaction tube 3. 5 is a vacuum pump for evacuating the inside of the reaction tube 3 via an exhaust pipe 8, 6 is a nozzle, and 7 is a flow rate regulator.
本発明方法で使用す為第１図示の減圧ＣＶＤ装置は、従
来方法で使用する第２図示の減圧ＣＶＤ装置と全く同じ
であり、本発明方法では原料ガスとして５ｉ８３Ｃ７！
ガスとＮＨ３ガスを使用している。The low pressure CVD apparatus shown in the first figure for use in the method of the present invention is exactly the same as the low pressure CVD apparatus shown in the second figure used in the conventional method, and in the method of the present invention, 5i83C7!
Gas and NH3 gas are used.
ＳｉＮ膜の生成は、従来の５ｉＨ２Ｃｌ ２ガスとＮ）
Ｉｆｆガスを用いた場合と同様に行う。即ち、多数枚の
ウェーハ１をポート２に立てて並べ、これを反応管３内
に挿入する。多数枚のウェーハ１を反応管３の外周に配
置されたヒータ４により、６００〜９００℃程度の一定
温度に加熱する。反応管３内を真空ポンプ５ （ロータ
リーポンプ等）により真空引きした後、反応管３人口部
からＮＨ３ガスを、また反応管３人口部より反応管３内
部に向かってのばしたノズル６からはＳｉＨ３Ｃｌガス
をそれぞれ流Ｍ調整器７を通して導入する。そして、反
応管３内の圧力を０．１〜５ Ｔｏｒｒ程度の一定圧力
に保つことにより、ウェーハ１の表面にＳｉＮ膜を生成
する。The generation of SiN film is performed using conventional 5iH2Cl2 gas and N).
It is carried out in the same manner as when using Iff gas. That is, a large number of wafers 1 are lined up in the port 2 and inserted into the reaction tube 3. A large number of wafers 1 are heated to a constant temperature of about 600 to 900° C. by a heater 4 disposed around the outer periphery of a reaction tube 3. After evacuating the inside of the reaction tube 3 with a vacuum pump 5 (rotary pump, etc.), NH3 gas is supplied from the reaction tube 3's opening, and from the nozzle 6 extending from the reaction tube 3's opening toward the inside of the reaction tube 3. SiH3Cl gas is introduced through a flow M regulator 7 in each case. Then, by maintaining the pressure inside the reaction tube 3 at a constant pressure of about 0.1 to 5 Torr, a SiN film is formed on the surface of the wafer 1.
このような方法で生成されたＳｉＮ膜は、膜質や膜厚の
均一性が５ｉＨｚＣ１ｚガスとＮＯ，ガスを用いた場合
とほとんど同等で、極めて良好である。また、反応副生
成物のＮＨ２ＯＮは、５ｉＨ３Ｃｌが５ｉＨｔＣｌ ！
に比べＣ１成分が２であることから極めて少なくなる。The SiN film produced by such a method has extremely good film quality and uniformity of film thickness, which are almost the same as those using 5 iHz C1z gas and NO gas. In addition, the reaction by-product NH2ON is 5iH3Cl is 5iHtCl!
Since the C1 component is 2, the amount is extremely small.
従って、ＳｉＮ膜の欠陥は大幅に減少する。Therefore, defects in the SiN film are significantly reduced.
さらに、真空ポンプ５のオイル中へのＮｌ（、Ｃｌの混
入も減少するからオイルの劣化も少なくなり、真空ポン
プ５のメンテナンスは極めて容易になる。Furthermore, since the mixing of Nl (and Cl) into the oil of the vacuum pump 5 is reduced, deterioration of the oil is also reduced, and maintenance of the vacuum pump 5 becomes extremely easy.
上述のように本発明によれば、膜厚の均一性が優れ、し
かも欠陥の少ないＳｉＮ膜を多数枚のウェーハについて
容易に得ることができ、また真空ポンプ５等の装置のメ
ンテナンスが容易になる。As described above, according to the present invention, SiN films with excellent film thickness uniformity and few defects can be easily obtained on a large number of wafers, and maintenance of equipment such as the vacuum pump 5 is facilitated. .
第１図は本発明方法で使用する減圧ＣＶＤ装置の一例を
示す説明図、第２図及び第３図は従来方法で使用する減
圧ＣＶＤ装置の各側を示す説明図である。
１・・・・・・ウェーハ、２・・・・・・ポート、３・
・・・・・反応管、４・・・・・・ヒータ、５・・・・
・・真空ポンプ、６・・・・・・ノズル、７・・・・・
・流Ｎ調整器、８・・・・・・排気配管、９・旧・・ウ
ェーハホルダ。
か
「FIG. 1 is an explanatory view showing an example of a low pressure CVD apparatus used in the method of the present invention, and FIGS. 2 and 3 are explanatory views showing each side of the low pressure CVD apparatus used in the conventional method. 1...Wafer, 2...Port, 3.
...Reaction tube, 4...Heater, 5...
...Vacuum pump, 6...Nozzle, 7...
・Flow N regulator, 8...Exhaust piping, 9.Old...Wafer holder. mosquito"
Claims (1)
搬入し、反応管３内の圧力を０．１〜５Ｔｏｒｒの範囲
の一定圧力に保ち、ウェーハ１の温度を６００〜９００
℃の範囲の一定温度に保って原料ガスを反応管３内に導
入し、ウェーハ１上に窒化シリコン膜を生成する方法に
おいて、原料ガスとしてＳｉＨ＿３Ｃｌ（モノクロロシ
ラン）ガスとＮＨ＿３（アンモニア）ガスを用いること
を特徴とする窒化シリコン膜生成方法。The port 2 carrying a large number of wafers 1 is carried into the reaction tube 3, the pressure inside the reaction tube 3 is maintained at a constant pressure in the range of 0.1 to 5 Torr, and the temperature of the wafers 1 is raised to 600 to 900 Torr.
In a method of producing a silicon nitride film on a wafer 1 by introducing a raw material gas into a reaction tube 3 while keeping it at a constant temperature in the range of °C, SiH_3Cl (monochlorosilane) gas and NH_3 (ammonia) gas are used as the raw material gases. A method for producing a silicon nitride film characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8646788A JPH01258433A (en) | 1988-04-08 | 1988-04-08 | Formation of silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8646788A JPH01258433A (en) | 1988-04-08 | 1988-04-08 | Formation of silicon nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01258433A true JPH01258433A (en) | 1989-10-16 |
Family
ID=13887763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8646788A Pending JPH01258433A (en) | 1988-04-08 | 1988-04-08 | Formation of silicon nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01258433A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010008444A (en) * | 1998-12-31 | 2001-02-05 | 김영환 | Method for removing defect of wafer |
-
1988
- 1988-04-08 JP JP8646788A patent/JPH01258433A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010008444A (en) * | 1998-12-31 | 2001-02-05 | 김영환 | Method for removing defect of wafer |
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