JPH01287930A - Semiconductor device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a bass basin film for a semiconductor device.

[Summary of the Invention] The present invention provides a highly reliable semiconductor device with excellent moisture resistance by using a phosphorus nitride film or a phothrone film in a passivation film of the semiconductor device.

[Prior Art] A passivation film for a semiconductor device has conventionally been formed using, for example, an IEDM.
Tech, Digest 1987209-21
2, a laminated film of a CVD oxide film, a CVD nitride film, and a polyimide film, a single-layer film of a CVD oxide film, and a single-layer film of a CVD nitride film have been used.

[Problem to be solved by the invention] In the above-mentioned conventional technology, the 5i02 film is used as the CVD oxide film.
A S iz N 4 film is widely used as a CVD nitride film. Among these, the SiO□ film does not have sufficient moisture resistance, and if it is to be used as a single layer film, the film thickness must be increased to 1 μm or more. In this case, the deposition time is longer and the underlying Ag wiring layer is Hillocks and voids are generated, reducing the moisture resistance of semiconductor devices and the reliability of wiring layers. Furthermore, if an attempt is made to use a single-layer Si or N4 film, the film stress will be high and will cause voids and notches in the underlying AI2 wiring layer, reducing its reliability. Moreover, even if it is used in a laminated film, the time required for deposition becomes long, which causes the same problem as above, and a new problem of a decrease in throughput arises. SUMMARY OF THE INVENTION The present invention is intended to solve these problems, and its purpose is to provide a highly reliable semiconductor device with excellent moisture resistance.

[Means for Solving the Problems 1] The semiconductor device of the present invention is characterized in that a phosphorus nitride film or a phothrone film is used as a passivation film of the semiconductor device.

[Example 1 An example of the present invention will be described along with the drawings. FIG. 1 is a main sectional view showing one embodiment of the present invention. The underlying Ag wiring 11103' is patterned on the insulating film 102 on the Si substrate, and a passivation film of phosphorus nitride (PxNy) III or phosphron (PxNyO) is formed on top of it as a passivation film.
z) A film 104 is formed. The deposition temperature of these films can vary from 400°C to 900°C. 500℃
If above, the dielectric breakdown electric field of the film at any temperature is IOM
V/cm or more, resulting in a very dense film. In this case, even if the film thickness is less than 1000 Å, the breakdown electric field is 10 M.
V/cm or more, and is of better quality than CV D Si Oz III, Si, N, and films, so it is possible to make the film thinner. The deposition rate of the film is CV D Si O * film and S 1sN4
Since it is larger than a film, it can be deposited in a short time, and as well as improving throughput, hillocks and voids are less likely to appear in the underlying A2 wiring layer. As a result, a highly reliable semiconductor device can be obtained.

Although the deposition temperature can be varied as described above, it is desirable to deposit at a temperature as low as possible, below the melting point of the Afi wiring layer.

In the above embodiments of the present invention, a single-layer phosphorus nitride film or phosthrone film was used, but as shown in FIG.
Even with the structure of the Ox film 201 and the two-layer film, reliability equivalent to that of the single-layer film described above can be obtained. Further, in this case, the film stress is smaller than that of a single layer film, and voids in the AJ2 wiring layer 202 are also reduced, making it possible to provide a more reliable semiconductor device. In the case of a two-layer film, the film thickness ratio with the CVD5 i O2 film can be set arbitrarily.
When 03 is thicker, the moisture resistance is further improved, and when it is thinner, film stress is reduced and void generation in the underlying layer and l wiring layer is suppressed.

[Effects of the Invention] As described above, according to the present invention, by using a phosphorus nitride film or a phosphron film as a passivation film of a semiconductor device, it is highly moisture resistant and reliable, reducing the occurrence of voids in the underlying A4 wiring layer. This makes it possible to provide semiconductor devices with high performance.

[Brief explanation of the drawing]

1 and 2 are main sectional views of a semiconductor device showing an embodiment of the present invention. 101... Silicon substrate 102... Insulating film 103... A2 wiring layer 104... Phosphorus nitride film or Phosuron film 201...
・CV D Si Os film 202...AI2 wiring layer 203...Phosphorus nitride film or phothrone film Applicant: Seiko Epson Corporation

Claims (1)

[Claims] A semiconductor device characterized in that a phosphorus nitride film or a phothrone film is used as a passivation film of the semiconductor device.