JPH0129008B2 - - Google Patents
Info
- Publication number
- JPH0129008B2 JPH0129008B2 JP9865681A JP9865681A JPH0129008B2 JP H0129008 B2 JPH0129008 B2 JP H0129008B2 JP 9865681 A JP9865681 A JP 9865681A JP 9865681 A JP9865681 A JP 9865681A JP H0129008 B2 JPH0129008 B2 JP H0129008B2
- Authority
- JP
- Japan
- Prior art keywords
- base metal
- cathode
- electron
- grain size
- life
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010953 base metal Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 description 16
- 239000003638 chemical reducing agent Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007373 indentation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J1/26—Supports for the emissive material
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
- Solid Thermionic Cathode (AREA)
Description
本発明は電子管用陰極に係り、特にカラーブラ
ウン管などに装置される速動型陰極や長寿命陰極
などに好適な電子管用陰極の基体金属に関するも
のである。
カラーブラウン管などに装着される速動型陰極
や長寿命陰極に使用される基体金属は、通常タン
グステン、ジルコニウム、けい素、ランタン、イ
ツトリウム、ハフニウム、マグネシウムなどの還
元剤を微量添加したニツケル基合金よりなつてい
る。そしてこの基体金属の一方の表面には、バリ
ウム、ストロンチウム、カルシウムなどのアルカ
リ土類金属の炭酸化物が被着され、電子管製造工
程中にこれら炭酸化物を酸化物に変化させて電子
放射物質として使用される。この電子放射物質は
基体金属中の還元剤により活性化され、安定した
電子放射特性を発揮するものである。
ところで最近のカラーテレビジヨン装置は電源
の投入後数秒以内に出画する所謂速動型となつて
おり、これには陰極構体の熱容量を小さくして昇
温時間を短縮した速動型陰極が使用されている。
この陰極構体の熱容量を小さくする手段として
は陰極スリーブや基体金属の小形化や薄肉化が企
てられている。
このうち陰極スリーブに関してはNi―Cr―Ｗ
合金などの強化材料を採用することにより薄肉化
できることが特開昭53−119662号などに示されて
いる。
一方基体金属については比較的高い放射電流密
度を期待する陰極の場合には、基体金属中に必要
量の還元剤を確保することが電子放射特性を維持
する上で必須であるとされてきた。この還元剤は
加熱時に電子放射物質と反応し、これを活性化す
るために消費される。また還元剤は基体金属の表
面から熱蒸発によつて外部に放出される。このよ
うに基体金属中の還元剤は動作寿命期間中、徐々
にその有効量が減少する。そして電子放射物質の
活性化は基体金属内部の還元剤が反応界面まで拡
散し、反応することによつて行なわれ、その結
果、還元剤の種類や濃度に依存した反応生成物が
反応界面に形成されることが知られている。この
反応生成物は従来中間層と呼ばれているものであ
る。
一般に高濃度還元剤を使用すると、還元剤拡散
に対して阻止効果があるか、または高電気抵抗を
示す中間層が形成されると云われている。従つて
現在使用されている基体金属には、例えば0.01〜
0.5％のマグネシウム、けい素、ジルコニウムな
どを微量に制御した還元剤が添加されている。そ
のため、より陰極の速動性を増加させるために
は、基体金属の肉厚を薄くすると同時に、還元剤
の基体金属内部から電子放射物質との反応界面へ
の拡散量が維持されるように配慮する必要がある
ことになる。
本発明は前述した問題点に鑑みなされたもので
あり、速動性の優れた長寿命の電子管用陰極を提
供することを目的とし、拡散路就中基体金属にお
ける結晶粒界の分布に着目し、これを制御するこ
とにより速動型で長寿命の電子管陰極を得ようと
するものである。
即ち、本発明は基体金属の結晶粒分布について
電子放射物質が被着形成されている側の基体金属
の上表面近傍の結晶粒径を細粒とすることによ
り、拡散速度の大きい粒界を多数確保すると共
に、電子放射物質が被着形成されている側に対向
する下表面近傍の結晶粒径を粗粒とし、拡散速度
の大きい粒界を少数に限ることにより、電子放射
物質が被着形成されていない側の下表面からの陰
極の動作寿命期間中における還元剤の熱蒸発によ
る散逸を抑えて、還元剤の有効量維持を実現する
と共に、電子放射物質と還元剤との活性化のため
の電子放射物質被着形成されている上表面近傍に
おける実質的な反応界面を増加させ、活性度の高
い高効率な電子管用陰極を得るようにしたもので
ある。
次に本発明の一実施例を第２図により説明する
が、説明を明確にするため従来のものを第１図に
示し、対比して説明する。
即ち、第１図において電子放射物質１は基体金
属２の一方の面に被着形成されているが、この基
体金属２は、電子放射物質１の被着形成されてい
る側と、その対向面とでは結晶粒分布における特
異的な差は存在してない。これに比較し本発明の
ものは第２図に示すように基体金属３の電子放射
物質１の被着形成されている側の上表面近傍で結
晶粒分布が細粒となつており、その対向面である
下表面近傍が粗粒となつていることを特徴として
いる。
次に第２図に示すような基体金属３の製造方
法、およびこのような基体金属を使用した電子管
用陰極の特性について更に詳しく説明する。
実施例 １
0.06重量％のマグネシウム―0.03重量％のけい
素―5.0重量％のタングステン―残ニツケルの化
学組成を有するニツケル合金から、通常の圧延、
焼鈍工程を経て直径1.5mmで板厚が40μｍおきに
150μｍに至るまでの各基体金属を用いて傍熱型
陰極を作成した。これらの基体金属の断面はいず
れも第１図のような結晶粒径を呈するものであ
る。
一方同様にして得られた各板厚の基体金属を陰
極に組み込む前にマイクロヴイツカーズ試験器を
用いて第３図に示すようにダイヤモンド錘の対角
長5μｍ程度の圧痕１０を基体金属の片方の面に
くまなく付けたのち、10-5Torrの真空中で700
℃、10分間加熱することにより各基体金属におけ
る結晶粒分布を第２図に示すよう調整した。その
後通常の方法により陰極を作成した。
このようにして作られた電子管用陰極を電子管
に組み込み、電子放射の強制寿命試験を行なつた
結果を第４図に示す。
即ち、板厚50μｍの本発明に係る基体金属３を
用いた寿命曲線５は同じ板厚の従来の基体金属２
を用いた寿命曲線７に較べ約30％の寿命増加が認
められた。寿命曲線４および６は板厚がいずれも
150μｍの場合のそれぞれ本発明に係る基体金属
３と従来の基体金属２を使用した結果であり、こ
の曲線４および６を対比すると、本発明の寿命特
性４が優れているが、その差は板厚50μｍの場合
よりもかなり小さい。
なお、従来と本発明に係る50μｍおよび150μｍ
の板厚の基体金属の結晶粒径を表１に示す。
The present invention relates to a cathode for an electron tube, and more particularly to a base metal of a cathode for an electron tube suitable for a fast-acting cathode or a long-life cathode installed in a color cathode ray tube or the like. The base metal used for fast-acting cathodes and long-life cathodes installed in color cathode ray tubes, etc. is usually made from nickel-based alloys with trace amounts of reducing agents such as tungsten, zirconium, silicon, lanthanum, yttrium, hafnium, and magnesium added. It's summery. Carbonates of alkaline earth metals such as barium, strontium, and calcium are deposited on one surface of this base metal, and these carbonates are converted into oxides during the electron tube manufacturing process and used as electron emitting materials. be done. This electron emitting material is activated by the reducing agent in the base metal and exhibits stable electron emitting characteristics. By the way, recent color television equipment is a so-called fast-acting type that displays images within a few seconds after the power is turned on, and this uses a fast-acting cathode that reduces the heat capacity of the cathode structure and shortens the heating time. has been done. As a means to reduce the heat capacity of the cathode assembly, attempts have been made to make the cathode sleeve and base metal smaller and thinner. Of these, the cathode sleeve is made of Ni-Cr-W.
JP-A-53-119662 and other publications show that the thickness can be reduced by using reinforcing materials such as alloys. On the other hand, in the case of a cathode that is expected to have a relatively high radiation current density with respect to the base metal, it has been considered essential to ensure the required amount of reducing agent in the base metal in order to maintain electron emission characteristics. This reducing agent reacts with the electron emitting substance during heating and is consumed to activate it. Further, the reducing agent is released from the surface of the base metal to the outside by thermal evaporation. Thus, the effective amount of the reducing agent in the base metal gradually decreases over the course of its operating life. Activation of the electron emitting substance is carried out when the reducing agent inside the base metal diffuses to the reaction interface and reacts, resulting in the formation of reaction products at the reaction interface depending on the type and concentration of the reducing agent. It is known that This reaction product is conventionally called an intermediate layer. It is generally said that when a high concentration reducing agent is used, there is a blocking effect on the diffusion of the reducing agent or an intermediate layer exhibiting high electrical resistance is formed. Therefore, the base metals currently used include, for example, 0.01~
A reducing agent containing a controlled amount of 0.5% magnesium, silicon, zirconium, etc. is added. Therefore, in order to further increase the rapidity of the cathode, the thickness of the base metal should be made thinner, and at the same time consideration should be given to maintaining the amount of diffusion of the reducing agent from inside the base metal to the reaction interface with the electron emitting substance. It turns out you need to. The present invention has been made in view of the above-mentioned problems, and aims to provide a cathode for an electron tube with excellent rapidity and long life.The present invention focuses on the distribution of crystal grain boundaries in the base metal during the diffusion path. By controlling this, we aim to obtain a fast-acting and long-life electron tube cathode. That is, in the present invention, by making the crystal grain size of the base metal fine near the upper surface of the base metal on the side where the electron emitting substance is deposited, a large number of grain boundaries with a high diffusion rate are formed. At the same time, by coarsening the crystal grain size near the lower surface facing the side on which the electron emitting material is deposited, and by limiting the number of grain boundaries where the diffusion rate is high to a small number, the electron emitting material can be deposited. This suppresses the dissipation of the reducing agent from the lower surface of the untreated side due to thermal evaporation during the operating life of the cathode, thereby maintaining an effective amount of the reducing agent, and also for the activation of the electron-emitting substance and the reducing agent. By increasing the substantial reaction interface near the upper surface where the electron emitting material is deposited, a highly active and highly efficient cathode for an electron tube can be obtained. Next, one embodiment of the present invention will be explained with reference to FIG. 2, but for clarity of explanation, a conventional one is shown in FIG. 1 and explained in comparison. That is, in FIG. 1, the electron emitting material 1 is deposited on one side of the base metal 2, but the base metal 2 is formed on the side on which the electron emitting material 1 is deposited and on the opposite surface. There is no specific difference in grain distribution between the two. In contrast, in the case of the present invention, as shown in FIG. 2, the crystal grain distribution is fine near the upper surface of the base metal 3 on the side where the electron emitting material 1 is deposited, and It is characterized by coarse grains near the lower surface. Next, the method for manufacturing the base metal 3 as shown in FIG. 2 and the characteristics of an electron tube cathode using such a base metal will be explained in more detail. Example 1 A nickel alloy having a chemical composition of 0.06% by weight of magnesium, 0.03% by weight of silicon, 5.0% by weight of tungsten, and the remainder of nickel was conventionally rolled,
After the annealing process, the plate is 1.5mm in diameter and every 40μm in thickness.
Indirectly heated cathodes were created using various base metals up to 150 μm thick. The cross sections of these base metals all exhibit crystal grain sizes as shown in FIG. On the other hand, before assembling the base metal of each plate thickness obtained in the same manner into the cathode, use a micro-Witzkers tester to make an indentation 10 with a diagonal length of about 5 μm with a diamond weight on the base metal, as shown in Figure 3. After applying it all over one side, it was heated to 700°C in a vacuum of 10 -5 Torr.
The crystal grain distribution in each base metal was adjusted as shown in FIG. 2 by heating at ℃ for 10 minutes. Thereafter, a cathode was created using a conventional method. The cathode for an electron tube thus produced was assembled into an electron tube, and a forced life test for electron emission was conducted. The results are shown in FIG. That is, the life curve 5 using the base metal 3 according to the present invention with a plate thickness of 50 μm is the same as that of the conventional base metal 2 with the same plate thickness.
Approximately 30% lifespan increase was observed compared to lifespan curve 7 using Life curves 4 and 6 have both plate thicknesses.
These are the results of using the base metal 3 according to the present invention and the conventional base metal 2, respectively, in the case of 150 μm. Comparing these curves 4 and 6, it can be seen that the life characteristic 4 of the present invention is excellent, but the difference is It is considerably smaller than the case with a thickness of 50 μm. In addition, 50 μm and 150 μm according to the conventional method and the present invention
Table 1 shows the crystal grain size of the base metal with a plate thickness of .
【表】
また表２に従来と本発明に係る50μｍの板厚の
基体金属の上下各表面から5μｍの深さ（1/10）
の深さにおける結晶粒径と寿命との関係を示す。
なおこの表２の寿命の判定は初期放射電流に対し
て放射電流が50％に減衰するまでの時間が表１に
示した上下各表面側の結晶粒径がそれぞれ30μｍ
の従来の基体金属に対して30％以上改善されたも
のを◎、10％以上改善されたものを〇、10％未満
の顕著な効果が認められないものを△で示してあ
る。[Table] Table 2 also shows the depth (1/10) of 5 μm from each of the upper and lower surfaces of the base metal with a thickness of 50 μm according to the conventional method and the present invention.
The relationship between grain size and life at depth is shown.
The lifespan in Table 2 is determined based on the time it takes for the radiation current to decay to 50% of the initial radiation current when the crystal grain size on each of the upper and lower surfaces shown in Table 1 is 30 μm.
◎ indicates an improvement of 30% or more over the conventional base metal, ○ indicates an improvement of 10% or more, and △ indicates an improvement of less than 10%.
【表】
本発明に係る基体金属の効果が極めて明確に現
れるのは図示および表示していないが基体金属の
厚さが約75μｍ以下である。
第４図からわかるように本発明の電子管用陰極
の特徴は速動性を具備した長寿命のものと云え
る。
なおこの種の電子管用陰極の基体金属の結晶粒
径と寿命との関係については、Ｄを平均結晶粒
径、ｔを加熱時間、Ｋ、ｎを定数とするとき、一
般に
Ｄ＝Ktn
で表され、平均結晶粒径Ｄは加熱時間に伴つて増
大する。しかしこのように結晶粒径が増大しても
基体金属の上下両表面の結晶粒径の相対的な相違
は維持されることが確認されており、結果的にそ
れが寿命特性の向上に寄与していると考えてよ
い。
前述した実施例１で示したマイクロヴイツカー
ズダイヤモンド錘による片面残留圧縮応力―焼鈍
方法以外にシヨツトピーニング―焼鈍方式、粒末
焼結―圧延法で細粒化した圧延板の一表面をレー
ザ走査により、この一表面近傍の領域を限定的に
焼鈍し粗粒化する方式、粉末焼結―圧延法で細粒
化した圧延板と通常の溶解―圧延法で得られた圧
延板とを張り合せて圧延したクラツド板を用いる
方式などによつても得られることは云う迄もな
い。
なお本発明の効果が充分に得られる結晶粒分布
の程度は前記表２からわかるように基体金属の結
晶粒径が電子放射物質が被着されている側の基体
金属の板厚の１／10の深さ領域における平均結晶
粒径が5μｍ以下で、かつ電子放射物質が被着形
成されている面の対向面の基体金属の板厚の１／
10深さ領域における平均粒径が20μｍ以上である
場合に最も良好な効果が得られる。
即ち例えば板厚が50μｍの場合5μｍの深さにお
ける平均粒径が5μｍ以下、20μｍ以上と云うこと
である。
上述のように本発明は速動型に好適な長寿命の
電子管用陰極を提供できるのでその工業的価値は
極めて大である。[Table] Although not shown or shown, the effect of the base metal according to the present invention is extremely evident when the thickness of the base metal is about 75 μm or less. As can be seen from FIG. 4, the cathode for an electron tube according to the present invention is characterized by rapid action and long life. The relationship between the crystal grain size of the base metal of this type of electron tube cathode and its life is generally expressed as D=Kt n , where D is the average crystal grain size, t is the heating time, and K and n are constants. The average crystal grain size D increases with heating time. However, it has been confirmed that even if the crystal grain size increases in this way, the relative difference in the crystal grain size on both the upper and lower surfaces of the base metal is maintained, and as a result, this contributes to improving the life characteristics. It can be considered that In addition to the one-sided residual compressive stress-annealing method using the Micro Vitzker's diamond weight shown in Example 1, one surface of the rolled plate made fine by the shot peening-annealing method and the grain-end sintering-rolling method was laser-treated. A method of annealing a region near one surface to coarsen the grain by scanning, and a method of rolling a rolled plate obtained by a powder sintering-rolling method to make the grain finer and a rolled plate obtained by a normal melting-rolling method. Needless to say, it can also be obtained by a method using clad plates rolled together. As can be seen from Table 2, the degree of crystal grain distribution at which the effects of the present invention can be sufficiently obtained is determined when the crystal grain size of the base metal is 1/10 of the plate thickness of the base metal on the side on which the electron emitting material is adhered. The average crystal grain size in the depth region of
The best effect is obtained when the average grain size in the 10 depth region is 20 μm or more. That is, for example, when the plate thickness is 50 μm, the average grain size at a depth of 5 μm is 5 μm or less and 20 μm or more. As described above, the present invention can provide a long-life cathode for an electron tube suitable for a fast-acting type, and therefore has extremely great industrial value.
第１図は従来の電子管用陰極の要部断面図、第
２図は本発明の電子管用陰極の要部断面図、第３
図はマイクロヴイツカースダイヤモンド錘の圧痕
図、第４図は従来及び本発明に係る電子管用陰極
の強制寿命試験における電子放射特性図である。
１…電子放射物質、２…従来の基体金属、３…
本発明に係る基体金属。
FIG. 1 is a sectional view of a main part of a conventional cathode for an electron tube, FIG. 2 is a sectional view of a main part of a cathode for an electron tube according to the present invention, and FIG.
The figure is a diagram of an indentation of a microvitskars diamond weight, and FIG. 4 is a diagram of electron emission characteristics in forced life tests of cathodes for electron tubes according to the prior art and the present invention. 1... Electron emitting material, 2... Conventional base metal, 3...
Base metal according to the present invention.
Claims (1)
着形成してなる基体金属を備えた電子管用陰極に
おいて、前記上表面から前記基体金属の板厚の
１／10の深さの領域における平均結晶粒径が5μ
ｍ以下であり、かつ対向面である下表面から前記
板厚の1/10の深さの領域における平均結晶粒径が
20μｍ以上であることを特徴とする電子管用陰
極。 ２ 基体金属の板厚が75μｍ以下であることを特
徴とする特許請求の範囲第１項記載の電子管用陰
極。[Scope of Claims] 1. In an electron tube cathode comprising a base metal formed by depositing an electron-emitting material on the upper surface of a nickel-based alloy, the cathode is provided at a depth of 1/10 of the plate thickness of the base metal from the upper surface. The average grain size in the area is 5μ
m or less, and the average grain size in a region at a depth of 1/10 of the plate thickness from the lower surface, which is the opposing surface, is
A cathode for an electron tube characterized by having a diameter of 20 μm or more. 2. The cathode for an electron tube according to claim 1, wherein the base metal has a thickness of 75 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9865681A JPS57212734A (en) | 1981-06-25 | 1981-06-25 | Cathode for electron tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9865681A JPS57212734A (en) | 1981-06-25 | 1981-06-25 | Cathode for electron tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57212734A JPS57212734A (en) | 1982-12-27 |
| JPH0129008B2 true JPH0129008B2 (en) | 1989-06-07 |
Family
ID=14225549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9865681A Granted JPS57212734A (en) | 1981-06-25 | 1981-06-25 | Cathode for electron tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57212734A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5584093B2 (en) * | 2010-11-05 | 2014-09-03 | 株式会社ユメックス | Cathode for short arc discharge lamp and method for producing the same |
-
1981
- 1981-06-25 JP JP9865681A patent/JPS57212734A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57212734A (en) | 1982-12-27 |
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