JPH01293502A - Positive characteristic thermistor - Google Patents
Positive characteristic thermistorInfo
- Publication number
- JPH01293502A JPH01293502A JP12458988A JP12458988A JPH01293502A JP H01293502 A JPH01293502 A JP H01293502A JP 12458988 A JP12458988 A JP 12458988A JP 12458988 A JP12458988 A JP 12458988A JP H01293502 A JPH01293502 A JP H01293502A
- Authority
- JP
- Japan
- Prior art keywords
- ceramics
- porous
- minute quality
- quality parts
- minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 3
- 239000012212 insulator Substances 0.000 claims abstract 2
- 230000007704 transition Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000004043 responsiveness Effects 0.000 abstract description 6
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 4
- 238000005245 sintering Methods 0.000 abstract description 3
- 238000003475 lamination Methods 0.000 abstract description 2
- 241000486661 Ceramica Species 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 230000005012 migration Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000001089 mineralizing effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
- H01C7/025—Perovskites, e.g. titanates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、チタン酸バリウム系酸化物を主成分とする半
導体セラミクスからなる正特性サーミスタに関し、特に
該サーミスタの特性を応用して各種センサとして利用す
る際の検出感度及び応答性を向上できるようにしたｔｉ
造に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a positive temperature coefficient thermistor made of semiconductor ceramics containing barium titanate-based oxide as a main component, and in particular to a positive temperature coefficient thermistor that can be used as various sensors by applying the characteristics of the thermistor. ti improves detection sensitivity and responsiveness when used.
Regarding construction.
一般に、正特性サーミスタは、ある所定の温度以上にな
ると、その抵抗値が急激に上昇する正の温度特性を有す
る抵抗体素子である。上記正特性サーミスタは、従来か
ら、このサーミスタにおける熱放散量、ひいては抵抗値
の流量又は湿度に対する依存性を利用した流量、湿度セ
ンサあるいは風速、液面センサ等に応用されている。Generally, a positive temperature coefficient thermistor is a resistor element having positive temperature characteristics whose resistance value rapidly increases when the temperature exceeds a certain predetermined temperature. The positive temperature coefficient thermistor has conventionally been applied to a flow rate, humidity sensor, wind speed, liquid level sensor, etc. that utilizes the amount of heat dissipated in the thermistor, and thus the dependence of the resistance value on the flow rate or humidity.
しかしながら、上記従来の正特性サーミスタを各種セン
サとして採用する場合、検出感度及び応答性の両方を高
くするのは困難という問題点がある。これは、上記従来
のサーミスタは、−ａ的に非常に粒径の小さいセラミク
ス粉末の焼結体であることから、その被検出流体が接触
する有効な検出表面積が小さく、その結果検出感度が低
くなり易い、一方、外形を大きくすれば有効表面積も大
きくなり、検出感度を向上できるものの、熱時定数が大
きくなり、応答速度が遅くなる。However, when employing the above conventional positive temperature coefficient thermistor as various sensors, there is a problem that it is difficult to increase both detection sensitivity and responsiveness. This is because the above-mentioned conventional thermistor is a sintered body of ceramic powder with a very small particle size, so the effective detection surface area that comes into contact with the fluid to be detected is small, resulting in low detection sensitivity. On the other hand, if the outer shape is made larger, the effective surface area becomes larger and the detection sensitivity can be improved, but the thermal time constant becomes larger and the response speed becomes slower.
ここで、上記怒度、応答性を向上するためにセラミクス
焼結体を全体的にポーラス状に形成し、多孔賞状にする
ことが考えられる。この多孔質セラミクスからなる正特
性サーミスタによれば、有効表面積を増大できるから、
それだけ感度を向上でき、かつ体積が大きくなることは
ないから熱時定数を小さくでき、その結果応答性を向上
させることができ、各種センサとしての性能を向上でき
る。Here, in order to improve the above-mentioned degree of anger and responsiveness, it is conceivable to form the ceramic sintered body into a porous shape as a whole to make it a porous award. According to this positive temperature coefficient thermistor made of porous ceramics, the effective surface area can be increased.
The sensitivity can be improved accordingly, and since the volume does not increase, the thermal time constant can be reduced, and as a result, the response can be improved, and the performance of various sensors can be improved.
しかし、上記多孔質の正特性サーミスタでは、このセラ
ミクス焼結体の両生面に、例えば無電解めっきによりＮ
ｉ電極膜を形成し、あるいはＡｇペーストを焼き付けて
電極膜を形成する際に、該Ｎｌ、Ａｇが上記ポーラス内
に浸透して上記焼結体が導体になってしまうという問題
がある。また、上記多孔質焼結体の表面は、ザラザラし
た凹凸状であることから、電極膜を形成しても接着強度
が低く、結局電極膜の形成が困難という問題が生じる。However, in the above-mentioned porous positive temperature coefficient thermistor, N is applied to the amphoteric surface of the ceramic sintered body by, for example, electroless plating.
When forming an i-electrode film or baking an Ag paste to form an electrode film, there is a problem that the Nl and Ag permeate into the pores and the sintered body becomes a conductor. Further, since the surface of the porous sintered body is rough and uneven, even if an electrode film is formed, the adhesive strength is low, resulting in a problem that it is difficult to form an electrode film.
本発明の目的は、各種センサーとしての検出感度及び応
答性を向上できるとともに、電極の浸透を防止でき、か
つ接着強度を確保できる正特性サーミスタを提供するこ
とにある。An object of the present invention is to provide a positive temperature coefficient thermistor that can improve the detection sensitivity and responsiveness of various sensors, prevent penetration of electrodes, and ensure adhesive strength.
本発明は、半導体セラミクスからなる正特性サーミスタ
において、多孔質のセラミクスからなる多孔質部の両側
に緻密質のセラミクスからなる緻密質部を配置して一体
焼結し、該緻密質部の外面に電極膜を形成したことを特
徴としている。The present invention provides a positive temperature coefficient thermistor made of semiconductor ceramics, in which dense parts made of dense ceramics are arranged on both sides of a porous part made of porous ceramics and are integrally sintered. It is characterized by the formation of an electrode film.
ここで、本発明における上記多孔質部は、空孔率を従来
のものより大きくしたセラミクス焼結体からなるもので
あり、この高空孔率は焼結時温度によって焼失し得る樹
脂粉末等の添加量を適宜選択することによって実現でき
、目的とする表面積。Here, the above-mentioned porous part in the present invention is made of a ceramic sintered body with a higher porosity than conventional ones, and this high porosity is achieved by adding resin powder etc. that can be burned out depending on the temperature during sintering. The desired surface area can be achieved by selecting the amount appropriately.
体積に応じて決定され石、また緻密質部は、従来と同程
度のセラミクス焼結体を採用でき、その粒子径等は無電
解めっきあるいは焼付けによって電極膜を形成する際に
、該電極が内部に入り込むことがなく、かつ電極膜の密
着強度が確保できる表面性状を得る観点から選択される
。Ceramic sintered bodies can be used for the stones and dense parts, which are determined according to the volume, and the particle size etc. can be adjusted depending on the internal structure of the electrode when forming the electrode film by electroless plating or baking. It is selected from the viewpoint of obtaining a surface quality that does not penetrate the electrode film and ensures the adhesion strength of the electrode film.
本発明に係る正特性サーミスタによれば、セラミクスか
らなる多孔質部の両側に緻密質部を一体焼結し、該緻密
質部に電極膜を形成したので、上記多孔質部によって、
体積を小さく保持しながら表面積を増大できるから検出
感度を向上できるとともに、熱時定数が小さくなってそ
れだけ応答速度を向上できる。その結果、各種センサと
して採用した場合の性能を向上できる。また、電極膜の
形成部が緻密質であるので、該電極膜を形成する際の電
極金属の浸透を防止できるとともに、電極膜の接着強度
を確保できる。According to the positive temperature coefficient thermistor according to the present invention, the dense portion is integrally sintered on both sides of the porous portion made of ceramics, and the electrode film is formed on the dense portion.
Since the surface area can be increased while keeping the volume small, the detection sensitivity can be improved, and the thermal time constant can be reduced, so the response speed can be improved accordingly. As a result, performance can be improved when employed as various sensors. Further, since the electrode film forming portion is dense, it is possible to prevent the electrode metal from penetrating when forming the electrode film, and to ensure the adhesive strength of the electrode film.
以下、本発明の実施例を図について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図ないし第３図は本発明の一実施例による正特性サ
ーミスタを説明するための図である。1 to 3 are diagrams for explaining a positive temperature coefficient thermistor according to an embodiment of the present invention.
第１図において、１は本実施例のＢａＴｉ○。In FIG. 1, 1 is BaTi○ of this example.
系半導体セラミクスからなる正特性サーミスタであり、
これは外形約５鶴角の直方体状のものである。このサー
ミスタ１は、多孔質のセラミクスからなる多孔質部２の
両側に緻密質のセラミクスからなる緻密質部３を配！し
、両者２．３を一体焼結し、さらに上記緻密質部３の外
面に外部電極膜４を形成して構成されている。また、上
記多孔質部２の厚さは約３ｍで、緻密質部３の厚さは約
１鶴になっている。It is a positive characteristic thermistor made of semiconductor ceramics,
This is a rectangular parallelepiped with an external shape of approximately 5 squares. This thermistor 1 has dense parts 3 made of dense ceramics on both sides of a porous part 2 made of porous ceramics! However, both parts 2 and 3 are integrally sintered, and an external electrode film 4 is further formed on the outer surface of the dense part 3. Further, the thickness of the porous portion 2 is approximately 3 m, and the thickness of the dense portion 3 is approximately 1 mm.
次に本実施例の正特性サーミスタ１の製造方法について
説明する。Next, a method of manufacturing the positive temperature coefficient thermistor 1 of this embodiment will be explained.
■ まず、主成分としてのチタン酸バリウムに、半導体
化剤としてＹｚＯｓ、鉱化剤として５ｉＯ８及びＡ１ｇ
Ｏ３，特性改善剤としテＭ ｎ ＣＯｓを添加して混合
した後、仮焼する。■ First, barium titanate as the main component, YzOs as a semiconducting agent, and 5iO8 and A1g as mineralizing agents.
O3 and MnCOs as a property improving agent are added and mixed, and then calcined.
■ 次に、上記仮焼したセラミクス体を再び粉砕し、こ
れにアクリル系有機バインダーを混合し、スラリー状の
セラミクス材料を生成する。(2) Next, the calcined ceramic body is crushed again, and an acrylic organic binder is mixed therein to produce a slurry-like ceramic material.
■ ここで、上記セラミクス材料を２つに分け、一方の
セラミクス材料に有機セルロース樹脂粉末を１０〜５０
重量％添加して混合した後、これをドクターブレード法
によって、多孔質用グリーンシート５に成形する。また
、他方のセラミクス材料を同じくドクターブレード法に
よって、緻密質用グリーンシート６に成形する。■Here, divide the above ceramic material into two, and add 10 to 50% organic cellulose resin powder to one ceramic material.
After adding and mixing in weight percent, this is formed into a porous green sheet 5 by a doctor blade method. Further, the other ceramic material is formed into a dense green sheet 6 by the same doctor blade method.
■ そして、上記多孔質用グリーンシート５を緻密質用
グリーンシート６でサンドインチ状に挟んで積層し、こ
れを積層方向に圧着する。次に、この積層体７を所定の
寸法ごとにカッティングし、直方体状のセラミクス素体
８を形成する。(2) Then, the above-mentioned porous green sheet 5 is sandwiched between dense green sheets 6 in a sandwich-like manner and laminated, and these are pressed together in the lamination direction. Next, this laminate 7 is cut into predetermined dimensions to form a rectangular parallelepiped-shaped ceramic body 8.
■ 次に、上記セラミクス素体８を、まず７００℃まで
１．０℃／ｗｉｎより遅い昇温速度で加熱してバインダ
ー及び多孔質用グリーンシート５内の樹脂粉末を焼失さ
せ、しかる後１３５０℃で約１時間加熱し、焼結体を生
成する０次に、この焼結体の両側面にオーミック性のＡ
ｇペーストを塗布し、これを焼付けて外部電極膜４を形
成する。これにより、両側が緻密質部３で真ん中が多孔
質部２の正特性サーミスタ１が製造される。(2) Next, the ceramic body 8 is first heated to 700°C at a temperature increase rate slower than 1.0°C/win to burn out the binder and the resin powder in the porous green sheet 5, and then heated to 1350°C. The sintered body is heated for about 1 hour to form a sintered body.
G paste is applied and baked to form the external electrode film 4. As a result, a positive temperature coefficient thermistor 1 having dense portions 3 on both sides and a porous portion 2 in the middle is manufactured.
次に本実施例の作用効果について説明する。Next, the effects of this embodiment will be explained.
本実施例の正特性サーミスタ１によれば、セラミクスか
らなる多孔π部２をセラミクスからなる緻密質部３でサ
ンドイッチ状に挟んで一体焼結し、該緻密質部３に外部
電極膜４を形成したので、この多孔π部２により、検出
に寄与する有効表面積が増大し、それだけ検出感度を向
上でき、しかも体積が増大することはないから熱時定数
を小さくでき、それだけ応答速度を速くできる。その結
果、各種センサとして採用した場合の性能を大幅に向上
できる。According to the positive temperature coefficient thermistor 1 of this embodiment, the porous π portion 2 made of ceramic is sandwiched between the dense portion 3 made of ceramic and integrally sintered, and the external electrode film 4 is formed on the dense portion 3. Therefore, this porous π section 2 increases the effective surface area that contributes to detection, thereby improving the detection sensitivity.Moreover, since the volume does not increase, the thermal time constant can be reduced, and the response speed can be increased accordingly. As a result, performance can be significantly improved when used as various sensors.
また、上記緻密質部３に電極膜４を形成したので、該電
極膜４を容易に形成できるとともに、ポーラス内への電
極金属の侵入を防止できる。さらに、表面性状が滑らか
な部分に電極膜４を形成しているから、接着強度を確保
できる。Furthermore, since the electrode film 4 is formed in the dense portion 3, the electrode film 4 can be easily formed, and the electrode metal can be prevented from entering into the porous interior. Furthermore, since the electrode film 4 is formed on a portion with a smooth surface, adhesive strength can be ensured.
ここで、上記正特性サーミスタ１を液面センサとして利
用する場合は、容器内の液面下限位置と上限位置とに上
記サーミスタを取付ければよい。Here, when the positive temperature coefficient thermistor 1 is used as a liquid level sensor, it is sufficient to attach the thermistor at the lower limit position and upper limit position of the liquid level in the container.
例えば液面が上限位置より高くなった場合、又は下限位
置より低くなった場合は、サーミスタの電圧、電流特性
が変化するから、これによりスイッチング回路を切り換
えることができ、センサとして機能することとなる。ま
た、上記正特性サーミスタ１は、流量、風速、湿度等の
センサとしても利用できる。For example, when the liquid level becomes higher than the upper limit position or lower than the lower limit position, the voltage and current characteristics of the thermistor change, which allows the switching circuit to be switched and functions as a sensor. . Furthermore, the positive temperature coefficient thermistor 1 can also be used as a sensor for flow rate, wind speed, humidity, etc.
以上のように本発明に係る正特性サーミスタによれば、
多孔π部の両側に緻密質部を一体焼結し、該緻密質部に
外部電極膜を形成したので、各種センサーとしての検出
感度及び応答性を向上できる効果があるとともに、電極
金属の浸透を防止でき、かつ接着強度を確保できる効果
がある。As described above, according to the positive temperature coefficient thermistor according to the present invention,
A dense part is integrally sintered on both sides of the porous π part, and an external electrode film is formed on the dense part, which has the effect of improving the detection sensitivity and responsiveness of various sensors, and also prevents the penetration of electrode metal. This has the effect of preventing this and ensuring adhesive strength.
第１′ｒｆ！Ｊないし第３図は本発明の一実施例による
正特性サーミスタを説明するための図であり、第１図は
その側面図、第２図はその製造方法を説明するための分
解斜視図、第３図はその斜視図である。
図において、１は正特性サーミスタ、２は多孔π部、３
は緻密質部、４は外部電極膜である。
特許出願人 株式会社 村田製作所
代理人 弁理士 下 市 努
第１図1st rf! FIGS. J to 3 are diagrams for explaining a positive temperature coefficient thermistor according to an embodiment of the present invention, in which FIG. 1 is a side view thereof, FIG. 2 is an exploded perspective view for explaining its manufacturing method, and FIG. Figure 3 is a perspective view thereof. In the figure, 1 is a positive temperature coefficient thermistor, 2 is a porous π section, and 3 is a positive temperature coefficient thermistor.
4 is a dense part, and 4 is an external electrode film. Patent applicant Murata Manufacturing Co., Ltd. Representative Patent attorney Tsutomu Shimoichi Figure 1
Claims (1)
ら絶縁体に転移する抵抗温度特性を有する正特性サーミ
スタにおいて、多孔質のセラミクスからなる多孔質部の
両側に緻密質のセラミクスからなる緻密質部を配置して
一体焼結し、該緻密質部の外面に外部電極を形成したこ
とを特徴とする正特性サーミスタ。(1) In a positive temperature coefficient thermistor that is made of semiconductor ceramics and has a resistance-temperature characteristic that transitions from a conductor to an insulator at a predetermined temperature, there are dense parts made of dense ceramics on both sides of a porous part made of porous ceramics. 1. A positive temperature coefficient thermistor, characterized in that: are arranged and integrally sintered, and an external electrode is formed on the outer surface of the dense part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12458988A JPH01293502A (en) | 1988-05-20 | 1988-05-20 | Positive characteristic thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12458988A JPH01293502A (en) | 1988-05-20 | 1988-05-20 | Positive characteristic thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01293502A true JPH01293502A (en) | 1989-11-27 |
Family
ID=14889203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12458988A Pending JPH01293502A (en) | 1988-05-20 | 1988-05-20 | Positive characteristic thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01293502A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751539A3 (en) * | 1995-06-29 | 1997-05-28 | Murata Manufacturing Co | Positive characteristics thermistor device |
| CN1087866C (en) * | 1995-12-13 | 2002-07-17 | 株式会社村田制作所 | Positive characteristics thermistor device |
| WO2008123078A1 (en) * | 2007-03-19 | 2008-10-16 | Murata Manufacturing Co., Ltd. | Laminated positive temperature coefficient thermistor |
-
1988
- 1988-05-20 JP JP12458988A patent/JPH01293502A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0751539A3 (en) * | 1995-06-29 | 1997-05-28 | Murata Manufacturing Co | Positive characteristics thermistor device |
| US5790011A (en) * | 1995-06-29 | 1998-08-04 | Murata Manufacturing Co., Ltd. | Positive characteristics thermistor device with a porosity occupying rate in an outer region higher than that of an inner region |
| CN1087866C (en) * | 1995-12-13 | 2002-07-17 | 株式会社村田制作所 | Positive characteristics thermistor device |
| WO2008123078A1 (en) * | 2007-03-19 | 2008-10-16 | Murata Manufacturing Co., Ltd. | Laminated positive temperature coefficient thermistor |
| JPWO2008123078A1 (en) * | 2007-03-19 | 2010-07-15 | 株式会社村田製作所 | Multilayer positive temperature coefficient thermistor |
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