JPH0131932B2 - - Google Patents
Info
- Publication number
- JPH0131932B2 JPH0131932B2 JP4096281A JP4096281A JPH0131932B2 JP H0131932 B2 JPH0131932 B2 JP H0131932B2 JP 4096281 A JP4096281 A JP 4096281A JP 4096281 A JP4096281 A JP 4096281A JP H0131932 B2 JPH0131932 B2 JP H0131932B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- metal
- film
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 30
- 239000007789 gas Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 description 16
- 239000010408 film Substances 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 229910001882 dioxygen Inorganic materials 0.000 description 10
- 239000002344 surface layer Substances 0.000 description 9
- 229920006254 polymer film Polymers 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910001006 Constantan Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002344 gold compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】
本発明は金属酸化物薄膜の製造方法に関するも
のであり、例えばIC基板、磁気記録媒体、電気
材料などのエレクトロニクスの分野あるいは各種
装飾に用いるもので、詳しくは、有機、無機材質
基板表面に800〜1000A゜程度の膜厚を有する金属
薄膜を附着し、金属薄膜としての特性を損ずるこ
となく、1000〜3000A゜の表面層のみを酸化する
方法に関するもので金属薄膜の表面に高温の酸素
を含むガス（以下含酸素ガスとよぶ）を吹きつけ
反対の基板側を冷却することを特徴とするもので
ある。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing metal oxide thin films, which are used in the field of electronics such as IC substrates, magnetic recording media, and electrical materials, or in various decorations. This method involves attaching a metal thin film with a thickness of approximately 800 to 1000 A° to the surface of an inorganic material substrate, and oxidizing only the surface layer of 1000 to 3000 A° without impairing the properties of the metal thin film. This method is characterized by blowing a high-temperature oxygen-containing gas (hereinafter referred to as oxygen-containing gas) onto the substrate to cool the opposite substrate side.
近年薄膜技術の進歩は著しく、その応用範囲も
多岐にわたつており例えば、薄膜技術として、ス
パツタリング、真空蒸着、イオンプレーテイング
などがあり、その応用としてIC技術、電気材料
などのエレクトロニクスあるいは各種装飾に用い
られている。 Thin film technology has made remarkable progress in recent years, and its application range is wide-ranging.For example, thin film technology includes sputtering, vacuum evaporation, ion plating, etc., and its applications include IC technology, electronics such as electrical materials, and various decorations. It is used.
基板上に薄膜を形成する技術は一種元素から成
る場合は可成の精度で再現性良く出来うるが、化
合物、あるいは合金にすることはむづかしく、従
来、合金又は化合物の薄膜を形成する方法として
反応性スパタリング、あるいは反応性蒸着法で化
合物を形成していた。反応性蒸着は例えばSio2薄
膜を基板面に形成する場合、真空蒸着装置に酸素
ガスを導入し、酸素ガスの雰囲気中でSioを蒸着
しSiO2（SiOx：ｘ＝１〜２）を作る方法が用いら
れている。その反応は次の通りである。 The technique of forming a thin film on a substrate can be made with reasonable precision and good reproducibility when it consists of one type of element, but it is difficult to form a compound or alloy, and conventional methods for forming thin films of alloys or compounds have been Compounds were formed using reactive sputtering or reactive vapor deposition. For example, when forming a Sio 2 thin film on a substrate surface, reactive evaporation is a method of introducing oxygen gas into a vacuum evaporation device and evaporating Sio in an atmosphere of oxygen gas to create SiO 2 (SiOx: x = 1 to 2). is used. The reaction is as follows.
Sio＋O2→Siox（ｘ＝１〜２）
また反応性スパタリング法ではターゲツトを化
合物にして化合物の薄膜を作ると、形成した薄膜
の成分がターゲツトの化合物と異なるため、例え
ば酸化物のスパタリングでは放電ガスのArの中
に酸素ガスを適当に混合してO2を補い、元の成
分と同じ組成の薄膜を作るようにする方法が用い
られている。しかし反応性蒸着および反応性スパ
タリングによる化合物の形成は、
元の成分と同じ組成、あるいは目的とする化
合物の組成を基板面に生成することがむづかし
い。 Sio + O 2 → Siox (x = 1 to 2) In addition, in the reactive sputtering method, when the target is a compound and a thin film of the compound is made, the components of the formed thin film are different from the target compound. A method is used to supplement O 2 by appropriately mixing oxygen gas into Ar to create a thin film with the same composition as the original component. However, when forming a compound by reactive vapor deposition and reactive sputtering, it is difficult to produce the same composition as the original component or the composition of the target compound on the substrate surface.
薄膜の表面層の一部を化合物にすることはむ
づかしい。 It is difficult to make a part of the surface layer of a thin film into a compound.
反応性スパタリングにおいて特に化合物の薄
膜生成速度が遅い。 In reactive sputtering, the rate of compound thin film formation is particularly slow.
などの欠点を有している。It has drawbacks such as:
本発明者は、上記従来の欠点に鑑み反応性蒸
着、反応性スパタリングの欠点をなくすべく種々
の実験、考案を行つた結果、基板面に形成した
800〜3000A゜程度の膜厚を有する薄膜の表面層に
高温の含酸素ガスを吹き付け、前記基板の反対側
を冷却することで薄膜全体としての特性を損ずる
ことなく200A゜程度のごく表面層のみを酸素化合
物に容易に変ることにより酸化膜厚を形成できる
ことがわかつた。 In view of the above-mentioned conventional drawbacks, the present inventor conducted various experiments and devised methods to eliminate the drawbacks of reactive vapor deposition and reactive sputtering, and as a result, the present inventors discovered that
By spraying high-temperature oxygen-containing gas onto the surface layer of a thin film with a film thickness of about 800 to 3000 A° and cooling the opposite side of the substrate, only the very surface layer of about 200 A° can be removed without damaging the properties of the thin film as a whole. It was found that a thick oxide film can be formed by easily converting oxide into an oxygen compound.
以下本発明の実施例における金属酸化物薄膜の
製造方法の詳細を述べる。 The details of the method for manufacturing a metal oxide thin film in Examples of the present invention will be described below.
実施例 １
ガラス基板１にFe膜を1000A゜の膜厚に真空蒸
着し、第１図に示すような真鍮の冷却槽２に固定
する。冷却部は、液体窒素温度（77゜K）から常
温（300゜K）まで任意な温度設定が選べる構造に
なつており、本実施例では冷媒にメチルアルコー
ルとドライアイスを用い
−10℃の温度設定を行い銅−コンスタンタン熱電
対４を用いて測定した。蒸着したFe薄膜３側は
常温雰囲気に置き、下方よりも高温の酸素ガス５
を吹き付ける。酸素ガスは第２図に示す如く
150Kg／cm2のガスボンベ（図示せず）をレギユレ
ーター７でその圧力、流量を調整し、セラミツク
ヒーター９で所定温度に加熱し、ノズル１０を経
てFe薄膜３に吹き付ける。ガス温度は常温から
800℃位まで可変で、温度はＣ−Ａ熱電体６を用
いてコントロールした。ヒーターの周囲はステン
レスの円筒８をガラス繊維で３重に断熱した。こ
の場合のガス温度は500℃で流量0.5／minとし
た。Example 1 An Fe film was vacuum-deposited to a thickness of 1000 A° on a glass substrate 1 and fixed in a brass cooling tank 2 as shown in FIG. The cooling section has a structure that allows you to select any temperature setting from liquid nitrogen temperature (77°K) to room temperature (300°K). Settings were made and measurements were taken using copper-constantan thermocouple 4. The side of the deposited Fe thin film 3 is placed in a room temperature atmosphere, and oxygen gas 5 is heated at a higher temperature than the bottom side.
Spray. As shown in FIG. 2, oxygen gas is supplied to a 150 kg/cm 2 gas cylinder (not shown) by adjusting its pressure and flow rate with a regulator 7, heating it to a predetermined temperature with a ceramic heater 9, and passing it through a nozzle 10 onto the Fe thin film 3. Spray. Gas temperature ranges from room temperature
The temperature was variable up to about 800°C and was controlled using a C-A thermoelectric element 6. Around the heater, a stainless steel cylinder 8 was triple-insulated with glass fiber. In this case, the gas temperature was 500°C and the flow rate was 0.5/min.
実施例 ２
Fe金属をその厚さが1000A゜程度に真空蒸着し
た高分子フイルム３０を第３図に示すようにフイ
ルム送り軸１１にセツトし、冷却用のクーリング
キヤン１２を経て、フイルム巻取り軸１３で巻取
る構造になつている。高分子フイルムへの鉄金属
の蒸着は通常の電子ビームを用いて高分子フイル
ム面に蒸着した。クーリングキヤン１２は500φ
中空円筒表面にハードクロムを鏡面仕上にし、温
度調節は冷媒を用いて常温から−30℃まで可変出
来るようにした。また送り、巻取り軸もフイルム
速度が０〜100ｍ／minの範囲で調整出来る構造
である。蒸着膜側の下方は実施例１と同様の構造
を有するガス供給部１４より成り、第４図に示す
ように酸素ノズル１５が多数の孔１６を有し、蒸
着フイルムの幅方向に均一分布させた。酸素供給
法及び加熱、温度調節は実施例１と同様の方法で
行つた。すなわち、第４図に示す如く150Kg／cm2
のガスボンベ（図示せず）をレギユレータ７でそ
の圧力、流量を調整し、セラミツクヒータ１７で
所定温度で加熱し、多数の孔１６を経て薄膜に吹
き付ける。本実施例ではフイルム送り速度10ｍ／
min、酸素ガス流量
1.0／min、酸素ガス温度500℃の条件下で行つ
た。Example 2 A polymer film 30 on which Fe metal is vacuum-deposited to a thickness of about 1000 A° is set on the film feed shaft 11 as shown in FIG. It has a structure that winds up at 13. Iron metal was deposited onto the polymer film using an ordinary electron beam. Cooling canister 12 is 500φ
The surface of the hollow cylinder is coated with hard chrome to give it a mirror finish, and the temperature can be adjusted from room temperature to -30℃ using a refrigerant. The film feed and take-up shafts are also structured so that the film speed can be adjusted within the range of 0 to 100 m/min. The lower part on the vapor deposited film side consists of a gas supply section 14 having the same structure as in Example 1, and as shown in FIG. Ta. The oxygen supply method, heating, and temperature control were performed in the same manner as in Example 1. That is, as shown in Figure 4, 150Kg/cm 2
The pressure and flow rate of a gas cylinder (not shown) are adjusted by a regulator 7, heated to a predetermined temperature by a ceramic heater 17, and sprayed onto the thin film through a large number of holes 16. In this example, the film feed speed is 10 m/
The oxygen gas flow rate was 1.0/min, and the oxygen gas temperature was 500°C.
実施例 ３
蒸着金属をコバルト金属に変え、実施例２と同
様に行つた。Example 3 The same procedure as in Example 2 was carried out except that the vapor-deposited metal was changed to cobalt metal.
実施例 ４
高分子フイルム上にニツケル金属を真空蒸着し
た薄膜に対して実施例２と同様の方法で行なつ
た。Example 4 The same method as in Example 2 was applied to a thin film of nickel metal deposited on a polymer film by vacuum evaporation.
実施例 ５
ガラス基板上にニツケル金属をスパタリングし
た薄膜に対して実施例１と同様の方法で行なつ
た。Example 5 A thin film of nickel metal sputtered onto a glass substrate was treated in the same manner as in Example 1.
実施例 ６
高分子フイルム上にクロム金属を真空蒸着した
薄膜に対して実施例２と同様の方法で行なつた。Example 6 The same method as in Example 2 was carried out on a thin film in which chromium metal was vacuum-deposited on a polymer film.
実施例 ７
高分子フイルム上にチタン金属を真空蒸着した
薄膜に対して実施例２と同様の方法で行なつた。Example 7 The same method as in Example 2 was carried out on a thin film of titanium metal vacuum-deposited on a polymer film.
実施例 ８
高分子フイルムフイルム上にSio金属を真空蒸
着した薄膜に対して実施例２と同様の方法で行な
つた。Example 8 The same method as in Example 2 was carried out on a thin film of Sio metal vacuum deposited on a polymer film.
実施例 ９
高分子フイルム上に鉄金属を真空蒸着した薄膜
に対して実施例２と同様の方法で行なつた。但し
酸素ガスのかわりにオゾンガスを用いた
次に本発明の実施例の効果を調べるために、ラ
ウエ法によるＸ線回折及びESCAによる表面状態
を調べた。その結果例えば実施例１では蒸着金属
層の表面にその厚さにおいて1000A゜程度のFe2O3
の金属酸化物が生成していることが判明した。実
施例２の場合も実施例１と同様にFe2O3の金化合
物が表面に生成していた。また実施例３のコバル
ト金属はCoからCo3O4に表面層のみ変化してお
り、２〜３分子層位いまでがCo3O4の酸化状態で
高分子層フイルム側に入るに従つてCoOの結晶構
造になつていることが解つた。実施例１、２と実
施例９との比較において、表面におけるFeの酸
化状態は酸素ガスよりオゾンガスを用いた方が安
定している。また、ガス温度が高温になるに従つ
て、冷媒との接触時間が長くなるに従い蒸着膜の
内側まで酸化状態が進んでいる。ガス温度は、
200℃〜800℃位までが最適で、温度が200℃より
低いと表面層が十分に酸化されず、温度が800℃
より高いと表面層以外の他の層が酸化される。ガ
スとの接触時間は10-3〜１秒程度が最適であつ
た。他の実施例であるニツケル、クロム、チタ
ン、Sioについても同様に表面層が金属酸化物に
なつている。Example 9 The same method as in Example 2 was carried out on a thin film in which iron metal was vacuum-deposited on a polymer film. However, ozone gas was used instead of oxygen gas.Next, in order to examine the effects of the embodiments of the present invention, the surface condition was examined by X-ray diffraction using the Laue method and ESCA. As a result, for example, in Example 1, Fe 2 O 3 with a thickness of about 1000 A° was deposited on the surface of the vapor-deposited metal layer.
It was found that metal oxides were produced. In the case of Example 2, as in Example 1, a gold compound of Fe 2 O 3 was generated on the surface. In addition, only the surface layer of the cobalt metal in Example 3 changed from Co to Co 3 O 4 , and as it entered the polymer layer film side, 2 to 3 molecular layers were in the oxidized state of Co 3 O 4 . It was found that the crystal structure is that of CoO. In a comparison between Examples 1 and 2 and Example 9, the oxidation state of Fe on the surface is more stable when ozone gas is used than when oxygen gas is used. Further, as the gas temperature becomes higher and the contact time with the refrigerant becomes longer, the oxidation state progresses to the inside of the deposited film. The gas temperature is
The optimum temperature is between 200℃ and 800℃.If the temperature is lower than 200℃, the surface layer will not be sufficiently oxidized, and the temperature will be lower than 800℃.
If the temperature is higher, layers other than the surface layer will be oxidized. The optimal contact time with the gas was about 10 -3 to 1 second. Other examples of nickel, chromium, titanium, and Sio also have surface layers made of metal oxides.
本発明の効果は、基板面に真空蒸着又はスパタ
リングした金属の表面層のみを高温加熱した含酸
素ガスで局部酸化し、冷媒を用いて基板の改質を
防ぐことにある。例えば、CO、Fe系の強磁性層
を形成し、その磁気特性を低下させることなく表
面の一部分に防錆等の目的で酸化保護膜を形成す
るような場合に有用である。勿論本発明を実施す
るにあたり、他の金属についても同様の効果があ
る。 The effect of the present invention is that only the surface layer of the metal vacuum-deposited or sputtered on the substrate surface is locally oxidized with a high temperature heated oxygen-containing gas, and the modification of the substrate is prevented using a coolant. For example, it is useful when a CO or Fe-based ferromagnetic layer is formed and an oxidation protective film is formed on a portion of the surface for the purpose of preventing rust, etc., without degrading the magnetic properties. Of course, when implementing the present invention, similar effects can be obtained with other metals.
第１図は本発明の一実施例における金属酸化物
薄膜の製造方法を実施する装置の構成を示す図、
第２図は同装置の要部を示す図、第３図は本発明
の他の実施例における金属酸化物薄膜の製造方法
を実施する装置の構成を示す図、第４図は同装置
の要部を示す図である。
１……ガラス基板、２……冷却槽、３……Fe
薄膜、５……酸素ガス、１２……クーリングキヤ
ン、１４……ガス供給部、３０……高分子フイル
ム。
FIG. 1 is a diagram showing the configuration of an apparatus for carrying out a method for producing a metal oxide thin film in an embodiment of the present invention;
FIG. 2 is a diagram showing the main parts of the same apparatus, FIG. 3 is a diagram showing the configuration of an apparatus for carrying out a method for manufacturing a metal oxide thin film in another embodiment of the present invention, and FIG. 4 is a diagram showing the main parts of the same apparatus. FIG. 1...Glass substrate, 2...Cooling tank, 3...Fe
Thin film, 5...Oxygen gas, 12...Cooling canister, 14...Gas supply section, 30...Polymer film.
Claims (1)
含む高温ガスで加熱するとともに、前記基板の他
方主面を冷却する工程を有することを特徴とする
金属酸化物薄膜の製造方法。1. A method for producing a metal oxide thin film, which comprises the steps of heating a metal thin film formed on one main surface of a substrate with high-temperature gas containing oxygen, and cooling the other main surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56040962A JPS57156029A (en) | 1981-03-20 | 1981-03-20 | Production of thin film of metallic oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56040962A JPS57156029A (en) | 1981-03-20 | 1981-03-20 | Production of thin film of metallic oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57156029A JPS57156029A (en) | 1982-09-27 |
| JPH0131932B2 true JPH0131932B2 (en) | 1989-06-28 |
Family
ID=12595103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56040962A Granted JPS57156029A (en) | 1981-03-20 | 1981-03-20 | Production of thin film of metallic oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57156029A (en) |
-
1981
- 1981-03-20 JP JP56040962A patent/JPS57156029A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57156029A (en) | 1982-09-27 |
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