JPH01319965A - Substrate adsorption device - Google Patents
Substrate adsorption deviceInfo
- Publication number
- JPH01319965A JPH01319965A JP63152696A JP15269688A JPH01319965A JP H01319965 A JPH01319965 A JP H01319965A JP 63152696 A JP63152696 A JP 63152696A JP 15269688 A JP15269688 A JP 15269688A JP H01319965 A JPH01319965 A JP H01319965A
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- pressure
- wafer
- convex portions
- substrate
- annular
- Prior art date
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子(LS I、VLS I等)を製造
するための半導体ウェハ、もしくは液晶素子を製造する
ためのガラスプレート等の基板を平坦に吸着固定する装
置に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention is for flattening a semiconductor wafer for manufacturing semiconductor devices (LSI, VLSI, etc.) or a substrate such as a glass plate for manufacturing liquid crystal devices. The present invention relates to a device for suctioning and fixing.
従来、この種の基板を加工する装置、例えば投影型露出
装置、レーザリペア装置等においては、基板を真空吸着
して所定の平面内に平坦化矯正する真空吸着ホルダーが
使用されている。特にこの種の製造装置では、基板を高
い精度で平坦化する必要がある。投影型露光装置(ステ
ッパー)の場合、レチクルの回路パターンを等倍、11
5、又は1/10等の倍率で基板表面へ結像投影するた
めの投影レンズが設けられている。この投影レンズは広
い投影領域を確保しつつ、特に縮小投影しンズの場合は
1μm以下の高い解像力を得る必要があるため、年々高
N、 A、化され、それに伴って焦点深度も浅(なって
きている、ある種の投影レンズでは、15X15■角の
フィールド内で±1μm程度の焦点深度しかなく、これ
に伴ってより高精度な焦点合わせの技術も要求されてき
ている。Conventionally, in apparatuses for processing this type of substrate, such as projection type exposure apparatuses and laser repair apparatuses, vacuum suction holders have been used that vacuum suction the substrate to flatten and straighten it within a predetermined plane. Particularly in this type of manufacturing equipment, it is necessary to planarize the substrate with high precision. In the case of a projection exposure device (stepper), the circuit pattern on the reticle is printed at the same magnification, 11
A projection lens is provided for forming and projecting an image onto the substrate surface at a magnification of, for example, 5 or 1/10. These projection lenses need to secure a wide projection area while also achieving high resolution of 1 μm or less, especially in the case of reduced projection lenses. Some of the emerging projection lenses have a depth of focus of only about ±1 .mu.m within a 15.times.15 square field, and as a result, more precise focusing techniques are also required.
一方、露光すべき15X15a+a各内の領域、前面に
おいて±1μmの焦点深度しかないため、基板上の露光
すべき1つの領域の全面は、投影レンズの最良結像面と
正確に一致させる必要がある。On the other hand, since there is only a depth of focus of ±1 μm at the front of each 15×15a+a area to be exposed, the entire surface of one area to be exposed on the substrate must be precisely aligned with the best imaging plane of the projection lens. .
ところがウェハやガラスプレートの表面には、局所的に
は数μm程度、全面では数十μm程度のそりや凹凸が存
在するため、そのままでは良好な解像特性でパターンを
露出することは困難である。However, the surface of a wafer or glass plate has warps and unevenness of several micrometers locally and several tens of micrometers across the entire surface, making it difficult to expose patterns with good resolution characteristics. .
そこで、−例として第3図(A)、(B)に示すような
ウェハホルダー(真空チャック)lによってウェハWを
平坦化矯正することが考えられている。Therefore, as an example, it has been considered to flatten and straighten the wafer W using a wafer holder (vacuum chuck) l as shown in FIGS. 3(A) and 3(B).
このウェハホルダー1は、ステッパーのウェハステージ
の最上部に投影レンズと対向するように設けられ、ウェ
ハステージとともに、投影レンズの下を2次元移動(ス
テッピング等)する。This wafer holder 1 is provided at the top of a wafer stage of a stepper so as to face a projection lens, and moves two-dimensionally (stepping, etc.) under the projection lens together with the wafer stage.
第3図(A)はウェハホルダー1の平面図であり、第3
図(B)は第3図(A)のC−3矢印断面図である。ウ
ェハホルダー1は、ウェハWよりも十分に厚い金属、又
はセラミックス材で円板状に作られており、載置面の形
状は、ウェハWの直径よりもわずかに小さい径の円形で
あるものとする。ウェハホルダーlの中心部には、ウェ
ハWの載置や取りはずしのためのウェハ受渡し昇降機構
2が上下動のときに貫通するような円形開口部1aが形
成されている。またウェハホルダーlの載置面には、ホ
ルダー1の中心から放射方向に同心円状の複数の環状凸
部10が放射方向に一定ピッチでリム状に形成されてい
る。ここで載置面の最外周側に位置する環状凸部10a
の半径は、ウェハWの中心から直線的な切欠き(オリエ
ンテーションフラッ))OFまでの半径よりもわずかに
小さく定められている。また各環状凸部10の上端面の
幅(径方向の寸法)は極力小さくなるように作られてお
り、研削・ラッピングが処されたその各上端面によって
規定される面が、平坦化の基準平面となる。尚、最も内
側の環状凸部10gは開口部1aの周囲に形成され、こ
の凸部10gと凸部10aによって雰囲気圧(大気圧)
とのリークが防止される。さらに各環状凸部10の間の
各凹部(環状)11には、真空吸着のための吸気孔IC
が径方向に並べて形成され、各吸気孔ICはホルダ−1
内部に径方向に伸びたスリーブ状の孔1bと連通してい
る。この孔1bを真空源につなげて、減圧することによ
って、ウェハWの裏面と輪帯状の各凹部11とでかこま
れた空間が負圧になり、ウェハWの裏面は複数の環状凸
部10の上端面にならって平坦化矯正される。FIG. 3(A) is a plan view of the wafer holder 1, and the third
Figure (B) is a sectional view taken along the line C-3 in Figure 3 (A). The wafer holder 1 is made of a metal or ceramic material that is sufficiently thicker than the wafer W in the shape of a disk, and the shape of the mounting surface is circular with a diameter slightly smaller than the diameter of the wafer W. do. A circular opening 1a is formed in the center of the wafer holder l, through which a wafer delivery lifting mechanism 2 for placing and removing a wafer W passes when moving up and down. Further, on the mounting surface of the wafer holder l, a plurality of concentric annular convex portions 10 are formed in a rim shape at a constant pitch in the radial direction from the center of the holder 1 in a radial direction. Here, an annular convex portion 10a located on the outermost side of the mounting surface
The radius is set to be slightly smaller than the radius from the center of the wafer W to the linear notch (orientation flat) OF. In addition, the width (radial dimension) of the upper end surface of each annular convex portion 10 is made as small as possible, and the surface defined by each upper end surface that has been subjected to grinding and lapping is the standard for flattening. It becomes a flat surface. The innermost annular convex portion 10g is formed around the opening 1a, and this convex portion 10g and the convex portion 10a reduce the atmospheric pressure (atmospheric pressure).
This prevents leaks. Furthermore, each recess (annular) 11 between each annular convex part 10 has an intake hole IC for vacuum suction.
are arranged in the radial direction, and each intake hole IC is connected to the holder-1.
It communicates with a sleeve-shaped hole 1b extending radially inside. By connecting this hole 1b to a vacuum source and reducing the pressure, the space defined by the back surface of the wafer W and the annular concave portions 11 becomes negative pressure, and the back surface of the wafer W is surrounded by a plurality of annular convex portions 10. It is flattened and corrected following the upper end surface.
このウェハホルダー1によると、同心円状の環状凸部1
0の径方向のピッチが大きい、すなわち凹部11の径方
向の幅が大きいと、各凹部11を減圧したときのウェハ
Wの変形(たわみ量)が、ステッパーで決定されている
焦点深度に対して無視できない程度になっている。これ
を防ぐためには環状凸部10のピッチを小さく(凹部1
1の幅を小さく)すればよい訳であるが、このことは必
然的に、ウェハWの裏面全面積に対する接触面積の割合
い(接触率)を大きくすることを意味する。According to this wafer holder 1, the concentric annular convex portion 1
If the radial pitch of 0 is large, that is, the radial width of the recesses 11 is large, the deformation (deflection amount) of the wafer W when each recess 11 is depressurized will be smaller than the depth of focus determined by the stepper. It has become impossible to ignore. In order to prevent this, the pitch of the annular convex part 10 should be made small (the concave part 1
1), but this necessarily means increasing the ratio of the contact area (contact ratio) to the total area of the back surface of the wafer W.
一般にウェハは、その両面に微小なゴミ粒子を伴って装
置に供給される場合が多く、ウェハホルダ71の載置面
(凸部10)とウェハ裏面との間にゴミを挟んだまま吸
着保持を行なった場合、ウェハ上面の平面度は、そのゴ
ミの大きさに応じた面積で局所的に悪化する。またその
ゴミの硬さによっては、最悪の場合、載置面の凸部10
の上端面に損傷を与えることにもなる。Generally, wafers are often supplied to the equipment with minute dust particles on both sides of the wafer, and the wafer is held by suction with the dust sandwiched between the mounting surface (convex portion 10) of the wafer holder 71 and the back surface of the wafer. In this case, the flatness of the top surface of the wafer deteriorates locally in an area corresponding to the size of the dust. Also, depending on the hardness of the dust, in the worst case, the convex part 10 of the placement surface
This may also cause damage to the upper end surface of the .
従って、ウェハ(基板)の吸着時における変形を小さく
押さえるために、凸部10のピッチを小さくして、密に
配列した同心円タイプは、ゴミによる影響に対して致命
的な欠点を持っていると言える。Therefore, in order to suppress the deformation during suction of the wafer (substrate), the concentric type in which the pitch of the convex parts 10 is made small and arranged densely has a fatal drawback against the influence of dust. I can say it.
本発明は、上記のような問題点に鑑み、吸着時の基板の
変形(たわみ、そり等)を小さくしつつ、接触率も同時
に小さく押さえる構造の吸着装置を提供することを目的
とする。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide a suction device having a structure that reduces deformation (deflection, warpage, etc.) of a substrate during suction and at the same time keeps the contact ratio low.
本発明は、上記問題点を解決するために、ホルダーの載
置面には、基板裏面の複数の部分領域を減圧するために
、その部分領域を囲んで閉じた形状(輪帯状、あるいは
孤立状)の第1の凸部を複数形成し、さらに、第1の凸
部で囲まれた内側の凹部を雰囲気圧よりも小さい第1の
圧力に減圧する減圧手段と;複数の凸部の外側の凹部を
、第1の圧力と雰囲気圧との間の圧力にtFi節する圧
力調節手段とを設け、少なくとも前記基板の吸着開始時
には、減圧手段と圧力11節手段とによって基板裏面の
ほぼ全体を減圧するように構成した。In order to solve the above-mentioned problems, the present invention has a mounting surface of a holder with a closed shape (ring-shaped or isolated shape) surrounding a plurality of partial regions on the back surface of the substrate in order to depressurize the plurality of partial regions on the back surface of the substrate. ) forming a plurality of first convex portions, further comprising a pressure reducing means for reducing the pressure in an inner concave portion surrounded by the first convex portions to a first pressure lower than atmospheric pressure; A pressure regulating means is provided to set the recess to a pressure tFi between the first pressure and the atmospheric pressure, and at least when the substrate starts to be attracted, almost the entire back surface of the substrate is reduced in pressure by the pressure reducing means and the pressure regulating means. It was configured to do so.
本発明では、ウェハ等の基板裏面の局所的な複数ケ所を
第1の圧力で真空吸着して確実な固定を行なうとともに
、真空吸着する複数の局所領域以外の部分を、第1の圧
力と大気圧との間の圧力に調整するため、圧力調整の働
く領域を広くしたとしても、基板の変形(たわみ)を全
体的に小さくすることができる。In the present invention, a plurality of localized locations on the back surface of a substrate such as a wafer are vacuum-adsorbed with a first pressure to ensure reliable fixation, and portions other than the plurality of localized regions to be vacuum-adsorbed are Since the pressure is adjusted to between the atmospheric pressure and the atmospheric pressure, the deformation (deflection) of the substrate can be reduced overall even if the area in which the pressure adjustment works is widened.
ここで第3図に示したものと、本発明の趣旨に添ったも
のとの差異を第4図、第5図、第6図を参照して説明す
る。第6図は第3図に示した一部ピッチの環状凸部10
を備えたホルダー1での吸着の様子を模式的に誇張して
示したもので、凸部10のピッチを小さくして凹部11
を減圧することで、ウェハW(直径3.5.6.8イン
チ程度)には局所的に極めて小さなたわみ量Δδ1が存
在するものの、はぼ均一な平面に矯正される。Here, the differences between what is shown in FIG. 3 and what is in accordance with the spirit of the present invention will be explained with reference to FIGS. 4, 5, and 6. Figure 6 shows the annular convex portion 10 with a partial pitch shown in Figure 3.
This is a schematic exaggerated illustration of the suction state in the holder 1 equipped with
By reducing the pressure, the wafer W (about 3.5.6.8 inches in diameter) is corrected to a nearly uniform plane, although there is locally an extremely small amount of deflection Δδ1.
ただし、この場合凸部10の上端面(基準面)とウェハ
裏面との接触率がかなり大きくなるため、ウェハ裏面と
の間に塵介が挟み込まれる確率がそれだけ高くなる。ゴ
ミの大きさが数μm程度あると、ウェハ裏面には局所的
に大きな凹凸が生じ、投影レンズの焦点深度以上になる
ことがある。However, in this case, since the contact ratio between the upper end surface (reference surface) of the convex portion 10 and the back surface of the wafer becomes considerably large, the probability that dust particles will be caught between the upper end surface (reference surface) of the convex portion 10 and the back surface of the wafer increases accordingly. If the size of the dust is about several micrometers, large irregularities may occur locally on the back surface of the wafer, and the depth of focus may exceed the depth of focus of the projection lens.
そこで第4図に示したホルダー1の部分断面のように、
環状凸部のピッチを不等間隔にし、真空吸着すべき凹部
11aは、ピッチの狭い凸部10a、10b、及び凸部
10c、10dの夫りで囲み、その間の凹部11b(凸
部10bと10cの間)は、比較的広いピッチにしてお
く、ここで凹部11a、llbを吸気孔ICを介して減
圧(−300〜−760+mHg程度)すると、第4図
のように、凹部両側の凸部とウェハ裏面とが強固に圧接
するため、幅の広い凹部11bのところではウェハWが
上方にΔδ2だけそり上がってしまうこともある。また
凸部fob、10cとウェハ裏面との間に、部分的にわ
ずかなすき間が生じていると、凹部11aから凹部11
bへ真空圧のリークが生じることにもなる。このリーク
は時間的に徐々に進行し、やがて凹部11bもかなり低
い圧力に減圧される。このため凹部11bに対向するウ
ェハの一部も、大きく落ち込むようにたわむことになる
。ただし、凹部11bを大気圧に解放するような構造に
した場合は、凹部11bのリークによる減圧は生じない
ので、第4図のようにΔδ8だけそった状態で固定され
てしまうことになる。Therefore, as shown in the partial cross section of the holder 1 shown in Fig. 4,
The pitch of the annular convex portions is set at unequal intervals, and the concave portion 11a to be vacuum-adsorbed is surrounded by convex portions 10a, 10b with a narrow pitch, and convex portions 10c, 10d. (between) are kept at a relatively wide pitch.If the recesses 11a and 11b are depressurized (about -300 to -760+mHg) through the intake hole IC, the convex parts on both sides of the recess and the Since the back surface of the wafer is firmly pressed, the wafer W may warp upward by Δδ2 at the wide recess 11b. Furthermore, if there is a slight gap partially between the convex portion fob, 10c and the back surface of the wafer, the concave portion 11a may
Vacuum pressure will also leak to b. This leak progresses gradually over time, and eventually the pressure in the recess 11b is also reduced to a considerably low pressure. As a result, a portion of the wafer facing the recess 11b also bends down to a large extent. However, if the concave portion 11b is constructed to be open to atmospheric pressure, no pressure reduction will occur due to leakage from the concave portion 11b, and the concave portion 11b will be fixed in a warped state by Δδ8 as shown in FIG.
そこで本発明では、ウェハが吸着されるときに、はぼ密
封状態にされる凹部11bの圧力を大気圧よりもわずか
に小さい負圧に調整することで、第4図に示したウェハ
のたわみを、第5図に示したたわみ量Δδ、のように低
減するようにしたのである。その圧力調整は凹部11b
に形成された孔leを介して積極的あるいは消極的に行
なう圧力調節手段により実行される。Therefore, in the present invention, when the wafer is sucked, the pressure in the recess 11b, which is brought into a nearly sealed state, is adjusted to a negative pressure slightly lower than atmospheric pressure, thereby reducing the wafer deflection shown in FIG. , the amount of deflection Δδ shown in FIG. 5 is reduced. The pressure is adjusted by the recess 11b.
This is carried out by means of positive or negative pressure regulation via holes le formed in the.
ここで第4図、第5図、第6図に示したたわみ量におい
て、凹部11bの減圧を適当な値にすることで、はぼΔ
δ2〉Δδ、≧Δδ、にすることができ、ステフパーの
投影光学系統によって決定される焦点深度等の諸量に対
して、実用上、たわみ量Δδ、を十分小さく押さえるこ
とができる。Here, in the amount of deflection shown in FIGS. 4, 5, and 6, by setting the reduced pressure in the recess 11b to an appropriate value, Δ
δ2>Δδ, ≧Δδ, and the amount of deflection Δδ can be kept sufficiently small for practical purposes with respect to various quantities such as the depth of focus determined by the projection optical system of the stepper.
しかも、凸部10a〜10dの接触率を小さくできるこ
とから、ゴミを挟み込む確率はかなり小さなものになる
。Moreover, since the contact ratio of the convex portions 10a to 10d can be reduced, the probability of dust being caught becomes considerably small.
第1図(A)、(B)は本発明の第1の実施例による吸
着装置(ウェハホルダー)の構造を示し、第3図と同じ
部材には同じ符号をつけである。ここで第1図(A)は
ホルダー1の平面図、第1図(B)は第1図(A)のC
−1矢視断面図である。1A and 1B show the structure of a suction device (wafer holder) according to a first embodiment of the present invention, and the same members as in FIG. 3 are given the same reference numerals. Here, FIG. 1(A) is a plan view of the holder 1, and FIG. 1(B) is the C of FIG. 1(A).
-1 arrow sectional view.
ウェハホルダー1の載置面の最外周には、リム状に環状
凸部10aが形成され、これとピッチ12(実用上2〜
5ないし6請)で環状凸部10bが形成される。またホ
ルダー1の中央の開口部1aの周囲にも、ピッチltで
2つの環状凸部10e、10fが形成される。さらに、
環状凸部10bと10eの間のほぼ中央部にも、ピッチ
2!で2つの環状凸部10c、10dが同心円に形成さ
れる。A rim-shaped annular convex portion 10a is formed on the outermost periphery of the mounting surface of the wafer holder 1, and a pitch of 12 (in practice, 2 to
An annular convex portion 10b is formed with 5 to 6 convex portions. Two annular protrusions 10e and 10f are also formed around the central opening 1a of the holder 1 at a pitch lt. moreover,
There is also a pitch of 2! approximately in the center between the annular convex portions 10b and 10e. Two annular protrusions 10c and 10d are formed concentrically.
この場合、環状凸部10bと10cのピッチと、環状凸
部10dと10eのピッチとはほぼ2.で等しくなって
いる。この実施例ではI−z/l+ ≦1/3程度に設
定されている。このため、環状凸部Jobとlocでは
さまれた輪帯状の凹部1】bと、環状凸部10dとlO
eではさまれた輪帯状の凹部lidとの径方向の幅(2
1)はかなり広くなっている。そこで本実施例では、こ
の幅21の2つの輪帯状の凹部11b、lidについて
は、本来の真空吸着力を発生する凹部1.1a、11c
、11eと同じ吸着力が働かないように、第1図(B)
に示す如く、スリーブ状の孔1dと凹部内11b、li
dに形成した孔1eとを介して、その凹部11b、li
d内を大気圧よりは低く、孔1bで引かれる真空圧より
は高い負圧にするようにした。従って、本実施例の場合
、環状凸部10a、10bで規定される幅l!の輪帯状
の吸着面の内側、環状凸部10e、10fで規定される
幅!!の輪帯状の吸着面、及び環状凸部10c、10d
で規定される幅1.の輪帯状の吸着面の内側と外側はい
ずれも弱い負圧に付勢されている。In this case, the pitch between the annular protrusions 10b and 10c and the pitch between the annular protrusions 10d and 10e are approximately 2. are equal. In this embodiment, it is set to about I-z/l+≦1/3. Therefore, an annular concave portion 1]b sandwiched between annular convex portions Job and loc, an annular convex portion 10d and lO
The radial width (2
1) is quite wide. Therefore, in this embodiment, the two annular recesses 1.1b and lid having a width of 21 are replaced with recesses 1.1a and 11c that generate the original vacuum suction force.
, 11e so that the same adsorption force does not work, as shown in Figure 1 (B).
As shown, the sleeve-shaped hole 1d and the inside of the recess 11b, li
d through the hole 1e formed in the recess 11b, li.
The pressure inside d was set to be lower than the atmospheric pressure, but higher than the vacuum pressure drawn through the hole 1b. Therefore, in the case of this embodiment, the width l defined by the annular convex portions 10a and 10b! The width defined by the annular protrusions 10e and 10f on the inside of the annular suction surface! ! annular suction surface and annular convex portions 10c, 10d
Width defined by 1. Both the inner and outer sides of the annular suction surface are energized by weak negative pressure.
本実施例では、3つの環状の真空吸着面を設けたが、こ
れはいくつにしてもよい。また環状吸着面の径方向のl
1i(ピッチI!、□)も、3つとも等しくする必要は
ない。さらに弱い負圧に減圧する輪帯状の凹部11b、
lidの幅(ピッチ2.)も、互いに等しく必要はなく
、適宜な寸法関係に定めることができる。In this embodiment, three annular vacuum suction surfaces are provided, but any number may be provided. Also, l in the radial direction of the annular suction surface
It is not necessary that all three 1i (pitch I!, □) be equal. An annular recess 11b that further reduces the pressure to a weaker negative pressure;
The widths (pitch 2.) of the lids do not have to be equal to each other, and can be determined in an appropriate dimensional relationship.
ところで第1図のホルダー1では、ウェハWの外周部は
環状凸部10aよりもわずかにオーバーハングしており
、第4図に示したウェハの変形のし方から、ウェハ外周
は上方にそり上がることが予想される。このそり量は、
材料力学上のモデル弐からおおよそ求めることが可能で
あり、特に載置面内側での真空吸着面及び凸部の配置寸
法によって支配的に決定され得る。従って、外周部のそ
りが許容できる範囲内におさまるように、環状凸部10
a、10 b、 10 c、 10 d等の配置、ピッ
チ7!+、it等を決定すればよい、また環状凸部10
a〜10fの各上端部は、わずかな幅をもつ平面となっ
ていることが望ましい。By the way, in the holder 1 shown in FIG. 1, the outer circumference of the wafer W slightly overhangs the annular convex portion 10a, and due to the way the wafer is deformed as shown in FIG. 4, the outer circumference of the wafer warps upward. It is expected that. This amount of warpage is
It can be roughly determined from the material mechanics model 2, and in particular, it can be predominantly determined by the arrangement dimensions of the vacuum suction surface and the convex portion inside the mounting surface. Therefore, the annular convex portion 10 is
Arrangement of a, 10 b, 10 c, 10 d, etc., pitch 7! +, it, etc., and the annular convex portion 10
It is desirable that each upper end portion of a to 10f is a flat surface with a slight width.
さて、第7図は、第1図に示したウェハホルダー1とと
もに使用される圧力調節手段の一例を示すブロック図で
ある。吸排気源30は約300mmHHの真空圧を発生
するとともに、加圧気体を発生することができる。真空
圧、又は加圧気体はバイブ31を通ってホルダーlの孔
1bにつながれている。圧力il1節器32は吸排気S
aOからの真空圧を入力して、バイブ33を介して孔1
dへ所定の負圧(ただしバイブ31を介して孔1bへ、
加えられる真空圧よりも高く、大気圧よりも低い)を供
給する。バイブ32に供給される負圧の大きさは制御系
34からの指令に応答して調整される。Now, FIG. 7 is a block diagram showing an example of pressure regulating means used together with the wafer holder 1 shown in FIG. 1. The suction/exhaust source 30 can generate a vacuum pressure of about 300 mmHH as well as pressurized gas. Vacuum pressure or pressurized gas passes through the vibrator 31 and is connected to the hole 1b of the holder l. The pressure il1 moderator 32 is the intake and exhaust S
Input vacuum pressure from aO to hole 1 via vibrator 33.
d to a predetermined negative pressure (however, to the hole 1b via the vibrator 31,
(higher than the applied vacuum pressure and lower than atmospheric pressure). The magnitude of the negative pressure supplied to the vibrator 32 is adjusted in response to commands from the control system 34.
また制御系34は吸排気源30も制御し、真空圧の供給
と加圧気体の供給との切り換え、その供給のタイミング
等をコントロールする。加圧気体の供給は、ウェハWを
ホルダー1から取り出すとき、各凹部11a、llb、
llc、lidが負圧に保持され続けないようにするた
めである。The control system 34 also controls the suction/exhaust source 30, switching between supplying vacuum pressure and pressurized gas, and controlling the timing of the supply. When the wafer W is taken out from the holder 1, the pressurized gas is supplied to each of the recesses 11a, llb,
This is to prevent the llc and lid from continuing to be held at negative pressure.
このため圧力調節器32には制御系34からの指令に応
じて、加圧気体をバイブ33へ供給する機能も備えてい
る。この第7図の方法は、載1面内の輪帯状の凹部11
b、lidの夫々を強制的に−様な負圧に保持するもの
であり、第1図に示したようにピッチ11と!、が1:
3程度の場合凹部11b、lidの減圧は凹部11aS
Ilc、lieの減圧の1720〜1/30程度で十
分な効果を得られることが実験によって確認された。For this reason, the pressure regulator 32 also has a function of supplying pressurized gas to the vibrator 33 in response to commands from the control system 34. The method shown in FIG.
b, lid are forcibly maintained at -like negative pressure, and as shown in Fig. 1, the pitch is 11 and ! , is 1:
If the pressure is about 3, the recess 11b is used, and the lid pressure is reduced by the recess 11aS.
It has been confirmed through experiments that a sufficient effect can be obtained at about 1,720 to 1/30 of the reduced pressure of Ilc and lie.
さて、第8図は圧力調節手段の他の変形例であって、第
7図のように凹部11b、lidを強制約に減圧するの
ではなく、凹部11a、llc、lidの真空圧(約−
300−〇g程度)が、ウェハWの裏面と各環状凸部の
上端面との部分的なわずかなすき間を通って凹部11b
、lidヘリークする現象(実際上は好しくない現象)
を積極的に利用して、自然に凹部11b、lidを減圧
させようとするものである。第8図はホルダー1の部分
断面を示し、孔1dと大気との間に、流量を半固定で調
整できるオリフィス40を設けである。Now, FIG. 8 shows another modification of the pressure regulating means, in which the vacuum pressure in the recesses 11a, llc, and lid (approximately -
(approximately 300 g) passes through a small partial gap between the back surface of the wafer W and the upper end surface of each annular convex portion and enters the concave portion 11b.
, lid leak phenomenon (actually undesirable phenomenon)
The purpose is to actively utilize this to naturally reduce the pressure in the recess 11b and lid. FIG. 8 shows a partial cross section of the holder 1, in which an orifice 40 is provided between the hole 1d and the atmosphere, the flow rate of which can be semi-fixedly adjusted.
オリフィス40には、孔1dと大気とをつなぐニードル
穴を持つ円柱部材40aが回転自在に設けられ、この円
柱部材40aを適宜回転することによって、ニードル穴
を通る流量を調節することができる。The orifice 40 is rotatably provided with a cylindrical member 40a having a needle hole connecting the hole 1d and the atmosphere, and by appropriately rotating the cylindrical member 40a, the flow rate passing through the needle hole can be adjusted.
ウェハWを載置して凹部11aに真空圧を供給すると、
環状凸部10b (又は10c)の上端面とウェハ裏面
との間からリークが生じ、凹部11b(又は10d)、
吸気孔1e、及び孔1d内の空間も減圧し始める。とこ
ろが、オリフィス40のニードル穴を通して孔】dは大
気圧にわずかにリークしているため、凹部11b(又は
11d)は凹部11aのような高い真空圧まで達するこ
となく、ある圧力状態で安定する。ここでオリフィス4
0のニードル穴の流量を絞っておけば、凹部11b(l
id)の圧力は、かなり高い真空圧(凹部11aに近い
値)にまで達することになり、流量を絞らなければ、大
気圧よりもわずかに低い圧力までしか達しないようにな
る。When the wafer W is placed and vacuum pressure is supplied to the recess 11a,
Leakage occurs between the upper end surface of the annular convex portion 10b (or 10c) and the back surface of the wafer, and the concave portions 11b (or 10d),
The spaces within the intake hole 1e and the hole 1d also begin to be depressurized. However, since the hole d slightly leaks to the atmospheric pressure through the needle hole of the orifice 40, the recess 11b (or 11d) does not reach the high vacuum pressure as the recess 11a, but stabilizes at a certain pressure state. Here orifice 4
If the flow rate of the needle hole 0 is restricted, the recess 11b (l
The pressure in id) will reach a considerably high vacuum pressure (a value close to that of the recess 11a), and unless the flow rate is throttled, it will reach only a pressure slightly lower than atmospheric pressure.
従って、第8図のような構成の圧力1j1節手段の場合
、ウェハWの真空吸着の開始時には、凹部11aととも
に凹部11bも瞬間的に高い真空圧になり、その後オリ
フィス40の作用で凹部11bは、凹部11aの圧力よ
りも高く大気圧よりも低い圧力に移行することになる。Therefore, in the case of the pressure 1j1 node means configured as shown in FIG. , the pressure shifts to higher than the pressure in the recess 11a and lower than atmospheric pressure.
尚、第8図に示したオリフィス40は、手動又は電動に
よって適宜流量可変にして使ってもよい。Incidentally, the orifice 40 shown in FIG. 8 may be used by adjusting the flow rate manually or electrically as appropriate.
ところで理想的には、凹部11a、llc、11eの真
空圧と、凹部11b、11dの圧力とはある所定の差が
安定して生じていることが望ましい。そこで第7図に示
した圧力調節手段を多少変形することが考えられる。例
えば、まずバイブ31の一部、もしくはホルダー1の凹
部の11a111c、lieのいずれかからパイプをひ
き出し、ここに第1の圧力センサーを設け、真空吸着時
の背圧をモニターする。そして圧力調節器32は流量可
変のニードル弁等で構成し、さらにバイブ33の一部か
らパイプをひき出し、ここに第2の圧力センサーを設け
る。そして第1の圧力センサーと第2の圧力センサーと
がモニターした圧力の差を演算し、その差が所定値にな
るようにニードル弁で流量を調整することもできる。あ
るいはパイプ33とバイブ31との間の差圧を直接、差
圧センサーで求めて、その差圧が所定値(吸着開始時と
吸着完了後とで異なってもよい)になるようにニードル
弁を制御してもよい。By the way, ideally, it is desirable that a certain predetermined difference is stably generated between the vacuum pressure in the recesses 11a, llc, and 11e and the pressure in the recesses 11b and 11d. Therefore, it is conceivable to slightly modify the pressure adjusting means shown in FIG. 7. For example, first, a pipe is pulled out from a part of the vibrator 31 or from one of the recesses 11a111c and lie of the holder 1, and a first pressure sensor is provided there to monitor the back pressure during vacuum suction. The pressure regulator 32 is composed of a variable flow rate needle valve or the like, and a pipe is drawn out from a part of the vibrator 33, and a second pressure sensor is provided there. It is also possible to calculate the difference between the pressures monitored by the first pressure sensor and the second pressure sensor, and adjust the flow rate using the needle valve so that the difference becomes a predetermined value. Alternatively, the differential pressure between the pipe 33 and the vibrator 31 is directly determined using a differential pressure sensor, and the needle valve is adjusted so that the differential pressure becomes a predetermined value (which may be different at the start of adsorption and after the completion of adsorption). May be controlled.
尚、このように圧力センサー、差圧センサー等を用いる
場合、あるいは第7図に示した構成を用いる場合も、凹
部11a、llc、lieの 真空圧の時間的変化と凹
部11b、lidの減圧の時間的変化とを適宜調整して
おくことができることは言うまでもない。In addition, when using a pressure sensor, a differential pressure sensor, etc. in this way, or when using the configuration shown in FIG. It goes without saying that temporal changes can be adjusted as appropriate.
次に、第2図(A)、(B)を参照して本発明の第2の
実施例による吸着装置について説明する。Next, an adsorption device according to a second embodiment of the present invention will be described with reference to FIGS. 2(A) and 2(B).
第2図(A)は、そのウェハホルダー1の平面図であり
、第2図(B)は、第2図(A)のC−2矢視断面図で
ある。第2図(B)に示すように、本実施例ではホルダ
ー1をi3!1面を有する載置部IAと、載置部IAと
一体に底側に設けられる底部IBとで構成する。載置部
IAの載置面の外周部には、第1図の場合と同様に環状
凸部10aが形成され、ホルダーlの中央を上下動する
ウェハ受渡し昇降機構2が通る開口部1aの周囲にも、
環状凸部10fが形成される。そしてこの2つの環状凸
部10a、10fではさまれた大きな輪帯状の凹部11
の内には、2次元的にほぼ一定のピッチで微小円形凸部
10gが複数配列される。FIG. 2(A) is a plan view of the wafer holder 1, and FIG. 2(B) is a sectional view taken along the line C-2 in FIG. 2(A). As shown in FIG. 2(B), in this embodiment, the holder 1 is composed of a placing part IA having an i3!1 surface and a bottom part IB provided integrally with the placing part IA on the bottom side. An annular convex portion 10a is formed on the outer periphery of the placement surface of the placement portion IA, as in the case of FIG. Also,
An annular convex portion 10f is formed. A large annular concave portion 11 sandwiched between these two annular convex portions 10a and 10f
A plurality of minute circular convex portions 10g are arranged two-dimensionally at a substantially constant pitch within.
これら円形凸部10gの径は2〜数圓程度であり、その
各上端面と環状凸部10a、10fの各上端面とは、基
準平面となるように研削、ラッピング加工等がなされて
いる。また各円形凸部Logの配列ピッチは数m〜士数
−程度に設定される。さらに本実施例では第2図(A)
でも示したように、互いに隣り合う3つの微小円形凸部
10gをみたとき、それがどこでもほぼ正三角形の頂点
の位置になるように配列されている。The diameter of these circular convex portions 10g is approximately 2 to several circles, and the respective upper end surfaces of the circular convex portions 10g and the respective upper end surfaces of the annular convex portions 10a and 10f are ground, lapped, etc. so as to form a reference plane. Further, the arrangement pitch of each circular convex portion Log is set to about several meters to about 100 meters. Furthermore, in this example, FIG. 2(A)
As shown, when looking at the three minute circular protrusions 10g adjacent to each other, they are arranged so that they are almost at the vertices of an equilateral triangle.
さて大きな輪帯状の凹部11の内には、さらに孔1eが
設けられ、この孔1eは第2図(B)に示すように、載
置部IAの裏面(底部IBとの接合面)の開口部1aの
周囲付近に形成された環状凹部1fにつながっている。Now, a hole 1e is further provided in the large annular recess 11, and this hole 1e is an opening on the back surface (joint surface with the bottom part IB) of the placement part IA, as shown in FIG. 2(B). It is connected to an annular recess 1f formed near the periphery of the portion 1a.
さらに載置部IAの裏面で、各微小円形凸部Logの存
在する部分には、大きな輪帯状の凹部1gが同心円に形
成されており、この凹部1gは各微小円形凸部Logの
中心に形成された吸気孔ICとつながっている。Furthermore, on the back surface of the placement part IA, a large annular concave portion 1g is formed concentrically in the area where each minute circular convex portion Log exists, and this concave portion 1g is formed at the center of each minute circular convex portion Log. It is connected to the intake hole IC.
その輪帯状の凹部1gは、内側の環状凹部1fとはつな
がっていない。The annular recess 1g is not connected to the inner annular recess 1f.
一方、底部IBには、輪帯状の凹部1gとつながる孔1
bと、環状凹部1fとつながる孔1dとが形成され、こ
の底部IBと載置部IAとをリークが起こらないように
第2図(B)のように密着して一体化する。On the other hand, the bottom part IB has a hole 1 connected to the annular recess 1g.
A hole 1d connected to the annular recess 1f is formed, and the bottom part IB and the mounting part IA are brought into close contact and integrated as shown in FIG. 2(B) to prevent leakage.
また孔1b、Idは、それぞれ例えば第7図に示したよ
うな吸排気源30及び圧力調節器32へつながれる。Further, the holes 1b and Id are connected to an intake/exhaust source 30 and a pressure regulator 32, respectively, as shown in FIG. 7, for example.
このような構造において、孔1bに約−300mmHg
以上の真空圧を供給すると、凹部1g内を通じて全ての
孔1cに真空圧が供給される。このためウェハWの裏面
は、全ての微小円形凸部Logの上端面(実際には微小
なリング状)に吸着固定される。そして、孔1dを介し
て凹部1fに負圧を供給すると、載置面の凹部11全体
が孔1eを介して減圧される。In such a structure, approximately -300 mmHg is applied to the hole 1b.
When the above vacuum pressure is supplied, the vacuum pressure is supplied to all the holes 1c through the recess 1g. Therefore, the back surface of the wafer W is suctioned and fixed to the upper end surfaces (actually, minute ring shapes) of all the minute circular convex portions Log. Then, when negative pressure is supplied to the recess 1f through the hole 1d, the entire recess 11 on the mounting surface is depressurized through the hole 1e.
本実施例によれば、微小円形凸部Logの径を小さくで
きるため、ウェハ裏面との接触率をかなり小さく押さえ
ることが可能である。また第2図(A)、(B)に示し
たホルダー1でも、真空吸着のための圧力制御、及び吸
着面以外の面を弱く減圧するための圧力制御等は先の第
1実施例で延べた各種方法をそのまま適用し得ることは
言うまでもない。According to this embodiment, since the diameter of the minute circular convex portion Log can be made small, it is possible to keep the contact rate with the back surface of the wafer considerably small. Also, in the holder 1 shown in FIGS. 2(A) and 2(B), the pressure control for vacuum suction and the pressure control for weakly reducing the pressure on surfaces other than the suction surface are explained in the first embodiment. It goes without saying that the various methods described above can be applied as they are.
また本実施例では個々の微小円形凸部10gが単独で局
所的な吸着力を発生するタイプ、所謂吸盤タイプを説明
したが、各吸盤の形状は円形以外に正方形(2〜数■角
)にしてもよい。Furthermore, in this embodiment, a so-called suction cup type, in which each minute circular convex part 10g independently generates a local adsorption force, was explained, but the shape of each suction cup may be square (2 to several squares) instead of circular. You can.
以上、本発明の各実施例では、構造上の特徴を活して、
ウェハ裏面と載置面との間に挟み込まれるゴミ粒子をス
タティック(機械的な運動をともなわず)に、除去する
ことが可能である。このことを簡単に説明するが、この
場合、ホルダー1の孔1b、ldには第7図のような強
制的な加減圧手段が接続されているものとする。As described above, in each embodiment of the present invention, by taking advantage of the structural features,
Dust particles caught between the wafer back surface and the mounting surface can be removed statically (without mechanical movement). This will be briefly explained. In this case, it is assumed that the holes 1b and ld of the holder 1 are connected to a forced pressurizing means as shown in FIG.
まず、ウェハ受渡し昇降機構2の載置面をホルダー1の
載置面よりも上方に突出させた状態で、ウェハWを昇降
機構2の上に保持する。昇降機構2の上面には不図示で
はあるが真空吸着部が形成されている。そして昇降機構
2を降下させつつ、孔1bには高い真空圧(約−300
mat(g)を供給し、孔1dにも比較的に高い真空圧
を同時に供給する。ウェハWが載置面上に接触すると、
孔1b。First, the wafer W is held on the elevating mechanism 2 with the mounting surface of the wafer delivery elevating mechanism 2 protruding above the mounting surface of the holder 1 . Although not shown, a vacuum suction section is formed on the upper surface of the lifting mechanism 2. Then, while lowering the lifting mechanism 2, a high vacuum pressure (approximately -300
mat(g) is supplied, and a relatively high vacuum pressure is simultaneously supplied to the hole 1d. When the wafer W comes into contact with the mounting surface,
Hole 1b.
又は1dの背圧が急激に低下するので、この変化を検出
して昇降機構2の吸着を中断する。その後昇降機構2は
第1図(B)、又は第2図(B)の位置まで降下して停
止する。Or, since the back pressure 1d suddenly decreases, this change is detected and the suction of the lifting mechanism 2 is interrupted. Thereafter, the elevating mechanism 2 descends to the position shown in FIG. 1(B) or FIG. 2(B) and stops.
さてこの状態のとき環状凸部10a〜10fの上端面、
又は微小円形凸部10gの上端面とウェハ裏面との間に
ゴミが挟み込まれたものとする。Now, in this state, the upper end surfaces of the annular convex portions 10a to 10f,
Or suppose that dust is caught between the upper end surface of the minute circular convex portion 10g and the back surface of the wafer.
次に、孔1bと1dのうち、いずれか一方に供給してい
る真空圧を加圧に切り替える。すると挟み込まれたゴミ
粒子のまわりでリーク(空気流)が生じ、ゴミ粒子は真
空圧が加わっている側へ力を受け、移動し得る。このた
めゴミ粒子は凸部10a〜10f、10gの上端面から
凹部側へ排除される。そこで孔1bと1dへ加える真空
圧と加圧とを複数回交互に繰り返すことによって、ウェ
ハ裏面に付着していたゴミ粒子を載置面の凹部に排除す
ることができる。この場合、ウェハ裏面の一部はかなら
ず吸着されていなければならない。Next, the vacuum pressure being supplied to either one of the holes 1b and 1d is switched to pressurization. A leak (airflow) then occurs around the trapped dust particles, and the dust particles receive a force toward the side where the vacuum pressure is applied, allowing them to move. Therefore, the dust particles are removed from the upper end surfaces of the convex portions 10a to 10f and 10g toward the concave portions. Therefore, by alternately repeating the vacuum pressure and pressurization applied to the holes 1b and 1d a plurality of times, the dust particles adhering to the back surface of the wafer can be removed to the recessed portion of the mounting surface. In this case, a part of the back surface of the wafer must be attracted.
この操作の後、先に説明したように所定の圧力状態に保
持すればよい。従って、このようなゴミ除去を実施する
ことも考えると、各凸部10a〜1Of、Logの接触
面の幅を極力小さくした方が望ましいが、ホルダー1の
製造の容易さも考慮して0.2 ass程度が限度と思
われる。After this operation, it is sufficient to maintain a predetermined pressure state as described above. Therefore, in consideration of carrying out such dust removal, it is desirable to make the width of the contact surface of each convex portion 10a to 1Of, Log as small as possible, but considering the ease of manufacturing the holder 1, it is preferable to Ass seems to be the limit.
尚、ホルダー1の載置面の凸部(又は凹部)の高さは0
.1〜0.5 m程度でよ(、またその平面形状も自由
に設定することができる。例えば第1図に示したホルダ
ー形状で、中央に形成した環状凸部10d、IOCを省
略し、環状凸部10bと108の間の広い輪帯状の凹部
に、微小ドツト0.5〜2!ll11程度の円形、また
は矩形)を規則的に所定ピッチで配列した構造にし、そ
の微小ドツトの各上端面を基準平面にしてもよい。この
場合も、環状凸部10bと10eの間の凹部を弱く減圧
すれば、同等の効果を得ることができる。Note that the height of the convex part (or concave part) on the mounting surface of holder 1 is 0.
.. 1 to 0.5 m (and its planar shape can be freely set. For example, in the holder shape shown in Fig. 1, the annular convex portion 10d formed in the center and the IOC are omitted, and The wide annular recess between the convex portions 10b and 108 has a structure in which minute dots (circular or rectangular shapes of about 0.5 to 2!ll11) are regularly arranged at a predetermined pitch, and the upper end surface of each of the minute dots is may be used as the reference plane. In this case as well, the same effect can be obtained by slightly reducing the pressure in the recess between the annular protrusions 10b and 10e.
また吸着固定すべき基板は、角形のガラスプレートでも
よく、この場合、ガラスプレートの外形に合わせてホル
ダーの載置面の形状を作ればよい。Further, the substrate to be fixed by suction may be a rectangular glass plate, and in this case, the shape of the mounting surface of the holder may be made to match the outer shape of the glass plate.
以上のように本発明によれば、基板を吸着固定する際、
基板の裏面と載置面との接触率を著しく低減できるため
、ゴミの影響を除去できるとともに、接触率が小さいこ
とによる基板の矯正力不足も十分補うことができ、基板
、特にウェハのたわみ量は、実用上十分に小さく押さえ
ることができる。As described above, according to the present invention, when a substrate is suctioned and fixed,
Since the contact ratio between the back surface of the substrate and the mounting surface can be significantly reduced, the influence of dust can be removed, and the lack of straightening force for the substrate due to the small contact ratio can be sufficiently compensated for, thereby reducing the amount of deflection of the substrate, especially the wafer. can be kept small enough for practical use.
第1図(A)、(B)は本発明の第1の実施例による吸
着装置の構造を示す平面図と断面図、第2図(A)、(
B)は第2の実施例による吸着装置の構造を示す平面図
と断面図、第3図(A)、(B)は従来考えられていた
吸着装置の構造を示す平面図と断面図、第4図、第5図
、第6図は従来考えられていたホルダーと本発明による
ホルダーとの各吸着の様子を模式的に誇張して示す部分
断面図、第7図は強制的な圧力調節手段の構成を示すブ
ロック図、第8図はオリフィスを用いた圧力調節手段を
組み込んだホルダーの構成を示す部分断面図である。
〔主要部分の符号の説明]
1・・・ウェハホルダー、
lb、ld・・・スリーブ状の孔、
1c・・・吸気孔、
1e・・・孔、
10a、10b、10c、10d、10e。
10f・・・環状凸部、
Log・・・微小円形凸部、
11、lla、llb、llc、lid、11e・・・
輪帯状凹部、
30・・・吸排気源、
32・・・圧力調節手段、
40・・・オリフィス1(A) and (B) are a plan view and a sectional view showing the structure of an adsorption device according to a first embodiment of the present invention, and FIG. 2(A) and (
B) is a plan view and a sectional view showing the structure of the adsorption device according to the second embodiment, and FIGS. 4, 5, and 6 are partial cross-sectional views schematically exaggerating the states of adsorption between the conventional holder and the holder according to the present invention, and FIG. 7 is a forced pressure adjustment means. FIG. 8 is a partial sectional view showing the structure of a holder incorporating pressure regulating means using an orifice. [Description of symbols of main parts] 1... Wafer holder, lb, ld... Sleeve-shaped hole, 1c... Intake hole, 1e... Hole, 10a, 10b, 10c, 10d, 10e. 10f...Annular convex portion, Log...Minute circular convex portion, 11, lla, llb, llc, lid, 11e...
Annular recess, 30... Suction/exhaust source, 32... Pressure adjustment means, 40... Orifice
Claims (2)
はそれよりも小さな形状の載置面を有し、該載置面には
前記基板の裏面の一部と接触する複数の凸部が形成され
、該凸部で囲まれた凹部を減圧することにより、前記基
板の裏面を前記複数の凸部の先端面で規定される基準面
にならわせて吸着固定する装置において、 前記載置面には、前記基板の裏面の複数の部分領域を減
圧するために、該部分領域を囲んで閉じた形状の第1の
凸部が複数形成されており;該第1の凸部で囲まれた内
側の凹部を雰囲気圧よりも小さい第1の圧力に減圧する
減圧手段と;前記複数の凸部の外側の凹部を、前記第1
の圧力と雰囲気圧との間の圧力に調節する圧力調節手段
とを設けたことを特徴とする基板の吸着装置。(1) It has a mounting surface with a shape equal to or smaller than the outer shape of the thin substrate to be flattened, and the mounting surface has a plurality of convex portions that come into contact with a part of the back surface of the substrate. In the apparatus for adsorbing and fixing the back surface of the substrate in alignment with a reference plane defined by the tip surfaces of the plurality of convex portions by reducing pressure in a concave portion formed and surrounded by the convex portions, is formed with a plurality of first convex portions in a closed shape surrounding the partial regions in order to reduce the pressure in the plurality of partial regions on the back surface of the substrate; surrounded by the first convex portions. pressure reducing means for reducing the pressure in the inner recess to a first pressure lower than atmospheric pressure;
1. A substrate adsorption device characterized by comprising: a pressure adjusting means for adjusting the pressure to a pressure between the pressure of the above and the atmospheric pressure.
る全面積に対して、前記第1の凸部の外側の凹部で規定
される全面積の方を大きく定めたことを特徴とする請求
項第1項記載の装置。(2) The total area defined by the recesses outside the first protrusion is set larger than the total area defined by the inner recess surrounded by the first protrusion. 2. A device according to claim 1, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63152696A JPH0831515B2 (en) | 1988-06-21 | 1988-06-21 | Substrate suction device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63152696A JPH0831515B2 (en) | 1988-06-21 | 1988-06-21 | Substrate suction device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01319965A true JPH01319965A (en) | 1989-12-26 |
| JPH0831515B2 JPH0831515B2 (en) | 1996-03-27 |
Family
ID=15546141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63152696A Expired - Fee Related JPH0831515B2 (en) | 1988-06-21 | 1988-06-21 | Substrate suction device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0831515B2 (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06244269A (en) * | 1992-09-07 | 1994-09-02 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor |
| US5738165A (en) * | 1993-05-07 | 1998-04-14 | Nikon Corporation | Substrate holding apparatus |
| JP2001118913A (en) * | 1999-10-18 | 2001-04-27 | Dainippon Printing Co Ltd | Substrate suction plate |
| JP2001118837A (en) * | 1992-09-07 | 2001-04-27 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| US6435492B1 (en) * | 1999-12-14 | 2002-08-20 | Esec Trading Sa | Die bonder and/or wire bonder with a suction device for pulling flat and holding down a curved substrate |
| JP2004303961A (en) * | 2003-03-31 | 2004-10-28 | Dainippon Printing Co Ltd | Suction plate device |
| JP2010231216A (en) * | 2010-04-23 | 2010-10-14 | Dainippon Printing Co Ltd | Color filter manufacturing method and color filter manufacturing apparatus |
| JP2014140059A (en) * | 2003-06-13 | 2014-07-31 | Nikon Corp | Substrate stage, exposure device, and method of manufacturing device |
| JP2019096864A (en) * | 2017-11-21 | 2019-06-20 | 日本特殊陶業株式会社 | Vacuum suction device |
| JP2019121666A (en) * | 2017-12-28 | 2019-07-22 | 富士電機株式会社 | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
| JP2021093547A (en) * | 2011-08-12 | 2021-06-17 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Bonding device of substrate and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318967A (en) * | 1976-08-05 | 1978-02-21 | Nec Corp | Wafer sucking jig |
| JPS6328048A (en) * | 1986-07-22 | 1988-02-05 | Oki Electric Ind Co Ltd | Wafer chucking device |
-
1988
- 1988-06-21 JP JP63152696A patent/JPH0831515B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5318967A (en) * | 1976-08-05 | 1978-02-21 | Nec Corp | Wafer sucking jig |
| JPS6328048A (en) * | 1986-07-22 | 1988-02-05 | Oki Electric Ind Co Ltd | Wafer chucking device |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001118837A (en) * | 1992-09-07 | 2001-04-27 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| JPH06244269A (en) * | 1992-09-07 | 1994-09-02 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor |
| US5738165A (en) * | 1993-05-07 | 1998-04-14 | Nikon Corporation | Substrate holding apparatus |
| JP2001118913A (en) * | 1999-10-18 | 2001-04-27 | Dainippon Printing Co Ltd | Substrate suction plate |
| US6435492B1 (en) * | 1999-12-14 | 2002-08-20 | Esec Trading Sa | Die bonder and/or wire bonder with a suction device for pulling flat and holding down a curved substrate |
| JP2004303961A (en) * | 2003-03-31 | 2004-10-28 | Dainippon Printing Co Ltd | Suction plate device |
| JP2015163970A (en) * | 2003-06-13 | 2015-09-10 | 株式会社ニコン | substrate stage |
| JP2014140059A (en) * | 2003-06-13 | 2014-07-31 | Nikon Corp | Substrate stage, exposure device, and method of manufacturing device |
| JP2010231216A (en) * | 2010-04-23 | 2010-10-14 | Dainippon Printing Co Ltd | Color filter manufacturing method and color filter manufacturing apparatus |
| JP2021093547A (en) * | 2011-08-12 | 2021-06-17 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Bonding device of substrate and method |
| JP2022174267A (en) * | 2011-08-12 | 2022-11-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Substrate bonding apparatus and method |
| JP2019096864A (en) * | 2017-11-21 | 2019-06-20 | 日本特殊陶業株式会社 | Vacuum suction device |
| JP2019121666A (en) * | 2017-12-28 | 2019-07-22 | 富士電機株式会社 | Semiconductor manufacturing apparatus and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0831515B2 (en) | 1996-03-27 |
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