JPH0148672B2 - - Google Patents
Info
- Publication number
- JPH0148672B2 JPH0148672B2 JP3167883A JP3167883A JPH0148672B2 JP H0148672 B2 JPH0148672 B2 JP H0148672B2 JP 3167883 A JP3167883 A JP 3167883A JP 3167883 A JP3167883 A JP 3167883A JP H0148672 B2 JPH0148672 B2 JP H0148672B2
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- paste
- baking
- connection
- printing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
本発明はW又はMo導体の同時焼成多層基板上
にCu導体配線とガラス被覆層とを交互に複層形
成して成る多層配線基板のW又はMo導体とCu導
体との接続技術に関するものである。
最近、W又はMo導体の同時焼成多層基板技術
とCu導体材料とを使用した厚膜多層配線技術と
を組み合わせた多層配線基板が見られるようにな
つてきた。この方法は、Cu導体の導電率が高く、
マイグレーシヨンを起こしにくくて、W又はMo
導体の信号速度に比べて約20%(厚膜形成法)短
くなるため高速化用途例えばコンピユーター、テ
レビチユーナー等に最適である。又多層配線基板
の上部形成Cuの配線層は種類の異なるLSIを載せ
るときの設計変更部としても使用出来るためであ
る。
この多層配線基板の従来の作成法は、スルーホ
ールを設けたグリーンシート上にW又はMo粉末
を溶剤等で調製したペーストをスクリーン印刷に
てスルーホール埋めと配線部とを形成し、これを
所望枚数だけ積層接着して、樹脂抜き後非酸化零
囲気中にて焼結し、上面にW又はMo部の露出し
た多層基板を得る。この露出したW又はMo上に
Niメツキを施し、その上にCuペーストを印刷し
て窒素雰囲気中で焼き付け後、その上面をガラス
ペーストでスクリーン印刷して被覆し、窒素雰囲
気中で焼き付ける。このCuペースト印刷、焼き
付け、ガラスペースト印刷、焼き付け工程を反復
して所望の2〜5層を形成して作成されていた。
この従来法によると、W又はMo導体+Niメツ
キ+Cu導体との密着性は良好となるが、Cuペー
スト焼き付けとガラスペースト焼き付け工程の反
復形成で、3層形成品までは良好な接続結線が出
来るが、しかし4〜5層形成品になるにつれての
焼き付け回数が増加するにつれ接続部の結合が弱
くなり、接続不良の発生もみられる様になつてき
た。
本発明は焼き付け回数を増加して積層数をどん
なに増しても、接続結線部に異常が生ぜず強固な
結合状態であり、かつ多層配線基板として使用さ
れる時、導通抵抗の経時変化の起きないものを作
成すべく鋭意研究の結果、下記の方法を見い出し
た。
本発明の要旨を第1図A図の多層配線基板の省
略断面図及びB図の一部拡大断面図により述べれ
ば、W又はMo導体2の同時焼成多層基板1上
に、Cu導体配線3とガラス被覆層4とを交互に
複層形成して成る多層配線基板のW又はMo導体
2とCu導体3との接続法において該W又はMo導
体2の接続部7にNiメツキ5を施し、その上に
更にNiペースト6を印刷し水素/窒素雰囲気で
焼き付けた後、Cuペースト3を印刷し窒素雰囲
気で焼き付けてW又はMo導体2とCu導体3との
接続を形成したことを特徴とするものである。
本発明の採用により、焼き付け回数を10回繰返
しても導通抵抗は殆ど変化しない強個な結線とな
り、かつ多層配線基板としての実用通電試験も
4000時間経過後も何等異常を認めず現在続行中で
ある。
本発明の導体接続法で強固な結線が出来た理由
として、W又はMoとCu間に、どちらとも反応し
やすいNi層を介在したこと、窒素雰囲気にて酸
化されるW又はMo層をNiメツキにて確実完全に
被覆したこと(直接のNiペースト被覆では不充
分)、Niペースト被覆によりCuペーストとの接触
凹凸面の食い込みにより、一段と反応結合層を強
固に形成したこと等によるものと判断される。ま
た窒素雰囲気中にてCuとガラスの焼き付けを行
つたのは、ガラス層の水素による強度劣化を防止
するためである。
以下、実施例につき説明するが、本発明の要旨
を越えない範囲内において、これに限定されな
い。
可塑剤、分散剤、溶剤等を添加して調製したア
ルミナ含有量96%の泥漿をキヤリアフイルム上
に、公知のドクターブレード工法でキヤステイン
グして、厚さ0.5mmのグリーンシートを成形した。
これを120×60mm寸法に裁断して10枚を作り、こ
の内の9枚に上下層との結線用のスルーホールを
穿設し、この孔内へW金属粉末よりなるベースト
を充填した。以上10枚のシート上面に所望の回路
配線をWペーストでスクリーン印刷にて形成し、
乾燥後10枚を上、下層との導通のない1枚を最下
層として積層圧着した。これを脂樹抜き後、水素
と窒素との混合雰囲気中の1550℃にて焼結し、多
層基板を得た。この基板の最上面に露出したWメ
タライズ上にNiメツキを厚さ3〜5μm施し、そ
の上にNi粉末よりなるペーストにて厚さ15〜20μ
mをクリーン印刷にて塗布し、水素と窒素との混
合雰囲気中の850℃にて焼き付けた。
次にNiメタライズ上を通り所望の回路配線を、
市販のデユポン製Ciペースト(No.9922)にて厚さ
15〜20μmをスクリーン印刷して配線を形成し、
窒素雰囲気中の850℃にて焼き付けた。このCuメ
タライズ上面を市販のデユポン製ガラスペースト
(No.4175)にてスクリーン印刷を2回反復して厚
さ30〜40μmの被覆層を形成し、乾燥後、窒素雰
囲気中の850℃にて焼き付けた。
以上のCuペーストでの回路配線印刷、焼き付
け、ガラスペースト被覆印刷、焼き付けの工程を
反復繰返して5層を形成し、目的の多層配線基板
を製作した。
比較例
上記実施例と同じ方法で10層形成したW配線の
同時焼成多層基板上にNiペースト印刷とその焼
き付けの工程を省略した以外はすべて実施例と同
じ方法で多層配線基板を製作した。
以上の実施例、比較例でのW配線の同時焼成基
板上にCuペースト配線印刷、焼き付け、ガラス
ペースト印刷、焼き付けを一層として、各層毎に
導通抵抗を測定したものを第1表に示す。
The present invention relates to a technology for connecting W or Mo conductors and Cu conductors in a multilayer wiring board formed by alternately forming Cu conductor wiring and glass coating layers on a co-fired multilayer board of W or Mo conductors. . Recently, multilayer wiring boards that combine co-fired multilayer board technology of W or Mo conductors and thick film multilayer wiring technology using Cu conductor materials have become available. This method has high conductivity of Cu conductor,
Less likely to cause migration, W or Mo
It is approximately 20% shorter than the signal speed of a conductor (thick film formation method), making it ideal for high-speed applications such as computers and television tuners. Moreover, the Cu wiring layer formed on the upper part of the multilayer wiring board can also be used as a design change part when mounting different types of LSIs. The conventional method for making this multilayer wiring board is to screen print a paste prepared by using W or Mo powder in a solvent on a green sheet provided with through holes to fill the through holes and form wiring parts, and then print the paste as desired. A number of the substrates are laminated and bonded, and after removing the resin, they are sintered in a non-oxidizing zero atmosphere to obtain a multilayer substrate with the W or Mo portion exposed on the upper surface. On this exposed W or Mo
After applying Ni plating and printing Cu paste on top of it and baking it in a nitrogen atmosphere, the top surface is covered by screen printing with glass paste and baking it in a nitrogen atmosphere. The Cu paste printing, baking, glass paste printing, and baking steps were repeated to form desired 2 to 5 layers. According to this conventional method, the adhesion between the W or Mo conductor + Ni plating + Cu conductor is good, but by repeating the Cu paste baking and glass paste baking processes, it is possible to make good connections up to three layers. However, as the number of times of baking increases as the product is made up of 4 to 5 layers, the bond at the connection portion becomes weaker, and connection failures are becoming more common. No matter how many layers are laminated by increasing the number of times of baking, the present invention maintains a strong bond without causing abnormalities in the connection and wiring parts, and when used as a multilayer wiring board, conduction resistance does not change over time. As a result of intensive research to create something, I discovered the following method. The gist of the present invention will be described with reference to an abbreviated sectional view of a multilayer wiring board in FIG. 1A and a partially enlarged sectional view in FIG. In a method of connecting W or Mo conductors 2 and Cu conductors 3 of a multilayer wiring board formed by alternately forming multiple layers with glass coating layers 4, Ni plating 5 is applied to the connection portions 7 of the W or Mo conductors 2, and Further, Ni paste 6 is printed on top and baked in a hydrogen/nitrogen atmosphere, and then Cu paste 3 is printed and baked in a nitrogen atmosphere to form a connection between W or Mo conductor 2 and Cu conductor 3. It is. By adopting the present invention, a strong connection with almost no change in conduction resistance can be achieved even after repeated baking 10 times, and it can also be used in practical conduction tests as a multilayer wiring board.
Even after 4,000 hours, no abnormalities were observed and the process is currently continuing. The reason why the conductor connection method of the present invention was able to make a strong connection is that a Ni layer, which easily reacts with both, is interposed between W or Mo and Cu, and the W or Mo layer, which is oxidized in a nitrogen atmosphere, is plated with Ni. This is thought to be due to the fact that the Ni paste coating ensured complete coverage (direct Ni paste coating was insufficient), and that the Ni paste coating bit into the uneven surface in contact with the Cu paste, forming an even stronger reaction bonding layer. Ru. The reason why Cu and glass were baked in a nitrogen atmosphere was to prevent the strength of the glass layer from deteriorating due to hydrogen. Examples will be described below, but the present invention is not limited thereto within the scope of the gist of the present invention. A slurry with an alumina content of 96% prepared by adding plasticizers, dispersants, solvents, etc. was casted onto a carrier film using a known doctor blade method to form a green sheet with a thickness of 0.5 mm.
This was cut to a size of 120 x 60 mm to make 10 pieces, nine of these pieces were made with through holes for connection to the upper and lower layers, and basest made of W metal powder was filled into these holes. Form the desired circuit wiring on the top surface of the above 10 sheets using W paste by screen printing,
After drying, 10 sheets were stacked and pressed together, with 10 sheets as the top layer and 1 sheet with no conduction to the bottom layer as the bottom layer. After removing the resin, this was sintered at 1550°C in a mixed atmosphere of hydrogen and nitrogen to obtain a multilayer board. Ni plating is applied to a thickness of 3 to 5 μm on the W metallization exposed on the top surface of this substrate, and a paste made of Ni powder is applied on top to a thickness of 15 to 20 μm.
M was applied by clean printing and baked at 850°C in a mixed atmosphere of hydrogen and nitrogen. Next, the desired circuit wiring is routed over the Ni metallization.
The thickness was measured using commercially available Dupont Ci paste (No.9922).
Form wiring by screen printing 15 to 20 μm,
Baked at 850°C in a nitrogen atmosphere. Screen printing was repeated twice on the top surface of this Cu metallization with commercially available Dupont glass paste (No. 4175) to form a coating layer with a thickness of 30 to 40 μm, and after drying, it was baked at 850°C in a nitrogen atmosphere. Ta. The above steps of printing circuit wiring with Cu paste, baking, glass paste coating printing, and baking were repeated to form five layers, and the desired multilayer wiring board was manufactured. Comparative Example A multilayer wiring board was manufactured in the same manner as in the example except that the Ni paste printing and baking steps were omitted on a co-fired multilayer board with 10 layers of W wiring formed using the same method as in the above example. Table 1 shows the conduction resistance measured for each layer of Cu paste wiring printed, baked, glass paste printed, and baked on the co-fired substrate of W wiring in the above Examples and Comparative Examples.
【表】
(注) ×印は断線を示す。
第1表より明らかな様にWメタライズ上にNi
メツキを施しそれにCuをメタライズした比較品
は、その焼き付けの回数が増加するに従つて導通
抵抗が大きくなり、5層形成品(焼き付け回数10
回)になると接続断線が発生する。それに対して
Wメタライズ−Niメツキ−Niペースト焼き付け
−Cuメタライズの本発明品は、焼き付け回数が
増加しても導通抵抗の増加はなく、5層形成品も
異常は認められず良好な導体接続の多層配線基板
が完了した、この基板の実用通電試験4000時間経
過後も異常なく現在続行中である。[Table] (Note) × indicates a disconnection.
As is clear from Table 1, Ni on W metallization
The comparative product, which is plated and metallized with Cu, has a higher conduction resistance as the number of times it is baked increases.
), a disconnection occurs. On the other hand, with the product of the present invention consisting of W metallization, Ni plating, Ni paste baking, and Cu metallization, there is no increase in conduction resistance even when the number of baking increases, and no abnormality was observed in the 5-layer product, resulting in good conductor connection. The multilayer wiring board has been completed, and the practical energization test for this board is currently continuing without any abnormalities after 4,000 hours.
第1図Aは本発明の多層配線基板の省略断面図
を示し、図中円Bの拡大図をB図に示す。
1……セラミツク基板、2……W又はMo回路
配線、3,3′……Cu導体配線、4……ガラス被
覆層、5……Niメツキ、6……Niペースト焼き
付け層、7……接続部。
FIG. 1A shows an abbreviated sectional view of the multilayer wiring board of the present invention, and FIG. 1A shows an enlarged view of circle B in the figure. 1... Ceramic substrate, 2... W or Mo circuit wiring, 3, 3'... Cu conductor wiring, 4... Glass coating layer, 5... Ni plating, 6... Ni paste baking layer, 7... Connection Department.
Claims (1)
導体配線とガラス被覆層とを交互に複層形成して
成る多層配線基板のW又はMo導体とCu導体との
接続法において、該W又はMo導体の接続部にNi
メツキを施し、その上に更にNiペーストを印刷
し水素/窒素雰囲気で焼き付けた後、Cuペース
トを印刷し窒素雰囲気で焼き付けてW又はMo導
体とCu導体との接続を形成したことを特徴とす
る多層配線基板の導体接続法。1 Cu on a co-fired multilayer substrate of W or Mo conductor
In a method for connecting a W or Mo conductor and a Cu conductor in a multilayer wiring board formed by alternately forming multiple layers of conductor wiring and glass coating layers, Ni is added to the connection portion of the W or Mo conductor.
It is characterized by plating, printing Ni paste thereon, baking it in a hydrogen/nitrogen atmosphere, and then printing Cu paste and baking it in a nitrogen atmosphere to form a connection between the W or Mo conductor and the Cu conductor. Conductor connection method for multilayer wiring boards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3167883A JPS59155995A (en) | 1983-02-25 | 1983-02-25 | Method of connecting conductor of multilayer circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3167883A JPS59155995A (en) | 1983-02-25 | 1983-02-25 | Method of connecting conductor of multilayer circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59155995A JPS59155995A (en) | 1984-09-05 |
| JPH0148672B2 true JPH0148672B2 (en) | 1989-10-20 |
Family
ID=12337764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3167883A Granted JPS59155995A (en) | 1983-02-25 | 1983-02-25 | Method of connecting conductor of multilayer circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59155995A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63153893A (en) * | 1986-12-18 | 1988-06-27 | 伊勢電子工業株式会社 | Multilayer printed interconnection board |
-
1983
- 1983-02-25 JP JP3167883A patent/JPS59155995A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59155995A (en) | 1984-09-05 |
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