JPH0150117B2 - - Google Patents
Info
- Publication number
- JPH0150117B2 JPH0150117B2 JP15244388A JP15244388A JPH0150117B2 JP H0150117 B2 JPH0150117 B2 JP H0150117B2 JP 15244388 A JP15244388 A JP 15244388A JP 15244388 A JP15244388 A JP 15244388A JP H0150117 B2 JPH0150117 B2 JP H0150117B2
- Authority
- JP
- Japan
- Prior art keywords
- carbide
- cathode
- mec
- composition
- gas laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 150000001247 metal acetylides Chemical class 0.000 claims description 8
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical class O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 239000003870 refractory metal Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000011866 long-term treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000013028 medium composition Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Landscapes
- Lasers (AREA)
Description
本発明は量子エレクトロニクス、さらに特定す
ればガスたとえばCO2ガスレーザー陰極および製
法に関する。
周知のように、ガス特にCO2レーザーは金属か
ら作つた陰極を使用する、これはニツケル、白金
などの金属が陰極の基本的性質すなわち導電性お
よび電子放出性を満足させるからである（米国特
許第3500242号参照）。しかしこれらの陰極は長期
間のレーザー動作を行なうことができない、これ
は動作ガス混合物成分との相互作用およびイオン
衝撃効果の下のスパツタリングによるためであ
る。
周知のガスレーザー用陰極は、約0.7mmの薄壁
円筒スリーブであつて、電気伝導放出物質、コバ
ルすなわちNi28％、Co18％、Fe54％の合金から
作る（O.K.Ilyina et al.“Series of Carbon
Dioxide Lasers Based on the Principal
Structure of LG−17 Type”、（Kvantovaya
Electron―ika”、1971、６、p.78参照）。
この陰極は、他の金属陰極と同様に、イオン衝
撃効果のもとでスパツタリングを行う。その結
果、動作ガス混合物の組成が急激に変化して放射
出力が急速に減少し、そのために装置の寿命が
500時間を越えない期間に制限される。
放出性および高い導電性を有する耐熱金属の炭
化物からつくつた電子−イオン装置のための陰極
も知られている（Rakitin S.P.et al.“Some
Results of Application of Carbides of Transi
―tion Metals for Cathodes of Electronic
Devices”、“Radiotchnika ｉ Electronika”、
1964、IX ５、p902−904参照）。
金属に比べると、種々の耐熱金属の炭化物はイ
オン衝撃の条件のもとで著しくスパツターされる
ことはないので、CO2レーザーガス混合物の活性
成分と実質的に反応しない。
炭化物からなる陰極を含む装置は一般に粉末冶
金圧縮成形および焼結の方法によつて製造され
る。しかし、0.5−0.8mmの比較的薄い壁を有する
ガスレーザー用陰極をこれらの方法によつてつく
ることはカーバイドが脆いので困難である（L.I.
Struck“Basic Characteristics of Compression
―Moulding of Carbides”in Coll.“Refractory
Carbides”、Kiev、“Naukova Dumka”、1970、
p.45−51参照）。
耐熱金属炭化物の陰極を含む装置の製造方法は
従来技術において知られており、この方法はグラ
フアイト素材をタンタルまたはニオブの五塩化物
およびアルゴンの雰囲気中において加熱し、グラ
フアイトを金属塩化物と高温度において反応させ
て炭化物被覆物を形成する（Repnikov N.N.et
al.“Physico−Chemical Conditions for Deposi
―tion of Niobium Carbide on Graphite”、in
Coll.“Temperature―Stable Protective
Coatings”、Leningrad、“Nauka”、1968、p.124
参照）。しかし、この方法によるガスレーザー用
陰極の製造はレーザーの寿命を顕著には延さな
い、これはグラフアイト基板の活性がレーザーの
ガス媒体と相互に反応して炭化物自身の有用な性
質を十分に利用することを妨げるためである。
また耐熱金属の炭化物から装置特に陰極を製造
する方法が従来知られている。この方法金属素材
を粉末状グラフアイト装入物中でタンタルおよび
ニオブを含むアルゴンの雰囲気中で加熱する。こ
の方法は拡散型浸炭法にもとずく（Samsonov
G.V.et al.“Refoactory Coatings”、Moscow、
“Metallurgiya”Publishing House、1973、
p.135参照。しかし、この方法によるガスレーザ
ー用陰極の製造はガス媒体組成に悪影響を与える
活性金属基材が存在するために有効ではない。
本発明は放出性および導電性が高くスプレー率
が低いことを特徴とし、これによつて装置の寿命
を延すことができることを特徴とするガスレーザ
ー陰極の構造を提供することであり、またこのよ
うな陰極の製造方法を提供することである。
本発明は導電性かつ放出性物質からなるスリー
ブのガスレーザー陰極であつて、このスリーブが
周期律第5A族金属の炭化物からなる３層で形成
され、２つの外層の組成がMeC0.8-0.95、内層の組
成がMEC0.5であることを特徴とするガスレーザ
ー陰極である。
さらに本発明はタンタルまたはニオブの素材を
粉末状グラフアイト装入物中で温度範囲2000〜
2200〜℃に加熱し、この温度に５〜10時間保持す
ることを特徴とするガスレーザー陰極の製造方法
である。
本発明の方法によつて製造したガスレーザー陰
極はスパツタリングが少なくガス媒体中における
安定性があり、機械的強さが大きく導電性および
放出性が高い性質を有する。本発明の陰極のこれ
らの利益はガスレーザーの寿命を約10倍に延ばす
ことができる。
本発明のガスレーザー陰極の製造方法の態様と
して、0.5〜0.7mmの薄い壁を有し、機械的に耐久
性のある陰極構造を得る単純な方法である。
本発明は次の詳細な実施態様の説明によつてさ
らに明らかになるであろう。
本発明のガスレーザー陰極は円筒形スリーブで
あつてその壁は３層構造を有し、周期律第5A族
金属の炭化物からつくる。２つの外側層１の組成
はMeC0.8-0.95、内層２の組成はセミ炭化物
MeC0.5である。これらの層１−２−１の厚みの
比１：１：１〜１：0.25：１の範囲で選択する。
これらのパラメーターは、陰極の動作特性、すな
わち低いスパツタリング率およびガス媒体中の安
定性などと、レーザー構造部材としての機械的強
さとの組合せを必要とすることによつて説明され
る。
実験的に示したように、陰極の所要の動作特性
はモノ炭化物MeC0.8-0.95の組成によつて達成さ
れ、２つの外側の炭化物層１の組成はこの特定し
た範囲を越えてはならない、内層の組成がセミ炭
化物MeC0.5であつて、このセミ炭化物はモノ炭
化物より粘度が大きい。
これの３層の厚みの比が１：１：１ないし１：
0.25：１であることは実験的に見つけたのである
が、これによつてレーザー構造部材として陰極の
機械的強さを必要な程度にすることができる。
本発明の陰極の製法の実施態様においては、タ
ンタルまたはニオブの金属素材は壁の厚みが製品
陰極の壁の厚みよりわずかに薄いが、この金属素
材を粉末状グラフアイト装入物中で不活性媒体中
で温度範囲2000〜2200℃に加熱し、この温度に５
〜10時間保持する。処理条件および素材の厚みは
炭化物形成反応がおきて、所要の組成および厚み
の比率を有する３層炭化物構造を形成するように
選択した。
この場合における３層陰極構造は周期律第5A
族金属をMe−Ｃ状態図において炭化して得られ
る、すなわち炭素に接触する外層はモノ炭化物
MeCxが形成され、ここでｘは炭化物の炭素数が
上限の１に近い値を意味する、一方内層は長時間
の処理においてセミ炭化物に変態する。
実際の反応速度は多くのパラメータによつて変
化するので、所要の正確度をもつて理論的に計算
することができない。それであるから処理条件お
よび製品陰極のパラメータは実験的に確かめるこ
とが必要である。処理温度が2000℃より低い時は
炭化物形成が著しく遅くなり、その結果炭化物形
成時間はかなり長くなる。2200℃より高い温度で
は炭化物形成と共に成長する炭化物層に欠陥を生
じ、製品陰極は内部応力および塑性変形によつて
形が変る。ニオブ炭化物陰極の製造においては、
処理温度範囲を2000〜2100℃に保持する、タンタ
ル炭化物の場合は処理温度範囲を2100〜2200℃に
保持する。所要のパラメータを有する陰極を製造
する全ての条件は相互に関連しているので、処理
時間は総合的な因子であり、その値は金属組織学
的分析によつて実験的に見い出す。処理温度を下
げ、かつ製品の組成MeC0.5内層の厚みを薄くす
る時は処理時間が長くなる。タンタルおよびニオ
ブのセミ炭化物は均一性の範囲がきわめて狭くて
六方晶形格子を有し、セミ炭化物組成の変形はＸ
線分析結果からは認めることができなかつた。
本発明の製法の実施態様の特殊な条件および、
これによつて得られた製品陰極のパラメータを第
１表に示す。
TECHNICAL FIELD This invention relates to quantum electronics, and more particularly to gases such as CO 2 gas laser cathodes and methods of manufacture. As is well known, gas, especially CO 2 lasers, use cathodes made of metals, since metals such as nickel, platinum, etc. satisfy the basic properties of cathodes, namely conductivity and electron emission (U.S. Pat. (See No. 3500242). However, these cathodes are not capable of long-term laser operation, due to interaction with the working gas mixture components and sputtering under ion bombardment effects. The well-known cathode for gas lasers is a thin-walled cylindrical sleeve of approximately 0.7 mm and is made from an electrically conductive emissive material, cobal, an alloy of 28% Ni, 18% Co, and 54% Fe (OKIlyina et al. “Series of Carbon
Dioxide Lasers Based on the Principal
Structure of LG−17 Type”, (Kvantovaya
Electron-ika”, 1971 , 6, p. 78). This cathode, like other metal cathodes, sputters under ion bombardment effects. As a result, the composition of the working gas mixture changes rapidly. radiated power decreases rapidly, thereby shortening the life of the device.
Limited to a period not exceeding 500 hours. Cathodes for electron-ion devices made from carbides of refractory metals with emissivity and high conductivity are also known (Rakitin SPet al. “Some
Results of Application of Carbides of Transi
―tion Metals for Cathodes of Electronic
Devices”, “Radiotchnika i Electronika”,
1964, IX 5, p. 902-904). Compared to metals, carbides of various refractory metals are not significantly sputtered under conditions of ion bombardment and therefore do not substantially react with the active components of the CO 2 laser gas mixture. Devices containing carbide cathodes are generally manufactured by powder metallurgy compaction and sintering methods. However, it is difficult to make cathodes for gas lasers with relatively thin walls of 0.5-0.8 mm by these methods due to the brittleness of carbides (LI
Struck“Basic Characteristics of Compression
―Moulding of Carbides”in Coll. “Refractory
Carbides”, Kiev, “Naukova Dumka”, 1970,
(See p. 45-51). Methods for manufacturing devices containing refractory metal carbide cathodes are known in the prior art, and this method involves heating a graphite material in an atmosphere of tantalum or niobium pentachloride and argon to convert the graphite into a metal chloride. React at high temperatures to form carbide coatings (Repnikov NNet
al. “Physico−Chemical Conditions for Deposit
―tion of Niobium Carbide on Graphite”, in
Coll.“Temperature―Stable Protective
Coatings”, Leningrad, “Nauka”, 1968, p.124
reference). However, the production of cathodes for gas lasers by this method does not significantly extend the lifetime of the laser, because the activity of the graphite substrate interacts with the gas medium of the laser and the useful properties of the carbide itself are not fully exploited. This is to prevent them from being used. Furthermore, methods for manufacturing devices, particularly cathodes, from carbides of refractory metals are known. In this method, a metal stock is heated in a powdered graphite charge in an argon atmosphere containing tantalum and niobium. This method is based on the diffusion carburizing method (Samsonov
GVet al. “Refoactory Coatings”, Moscow,
“Metallurgiya” Publishing House, 1973,
See p.135. However, the production of cathodes for gas lasers by this method is not effective due to the presence of active metal substrates that adversely affect the gas medium composition. The present invention provides a gas laser cathode structure which is characterized by high emission and conductivity and low spray rate, thereby extending the life of the device. An object of the present invention is to provide a method for manufacturing such a cathode. The present invention is a gas laser cathode having a sleeve made of a conductive and emissive material, and the sleeve is formed of three layers made of a carbide of a group 5A metal of the periodic table, and the two outer layers have a composition of MeC 0.8-0.95 , This is a gas laser cathode characterized in that the composition of the inner layer is MEC 0.5 . Furthermore, the present invention is capable of dissolving tantalum or niobium materials in a powdered graphite charge at temperatures ranging from 2000 to 2000.
This is a method for producing a gas laser cathode, which is characterized by heating the cathode to 2200° C. and maintaining it at this temperature for 5 to 10 hours. The gas laser cathode produced by the method of the present invention exhibits less sputtering, is stable in a gas medium, has large mechanical strength, and has high electrical conductivity and emission properties. These benefits of the cathode of the present invention can extend the lifetime of gas lasers by about 10 times. As an embodiment of the method of manufacturing the gas laser cathode of the invention, it is a simple method to obtain a mechanically durable cathode structure with thin walls of 0.5-0.7 mm. The invention will become more apparent from the following detailed description of embodiments. The gas laser cathode of the present invention is a cylindrical sleeve whose walls have a three-layer structure and are made of a carbide of a group 5A metal of the periodic table. The composition of the two outer layers 1 is MeC 0.8-0.95 , and the composition of the inner layer 2 is semi-carbide.
MeC is 0.5 . The thickness ratio of these layers 1-2-1 is selected within the range of 1:1:1 to 1:0.25:1.
These parameters are explained by requiring a combination of the operating properties of the cathode, such as low sputtering rate and stability in gaseous media, and mechanical strength as a laser structural member. As shown experimentally, the required operating characteristics of the cathode are achieved by a composition of monocarbide MeC 0.8-0.95 , the composition of the two outer carbide layers 1 must not exceed this specified range, and the inner layer The composition is semi-carbide MeC 0.5 , and this semi-carbide has a higher viscosity than mono-carbide. The ratio of the thickness of these three layers is 1:1:1 or 1:
It was experimentally found that the ratio is 0.25:1, which allows the cathode to have the necessary mechanical strength as a laser structural member. In an embodiment of the cathode manufacturing method of the present invention, the tantalum or niobium metal stock, whose wall thickness is slightly less than the wall thickness of the production cathode, is inert in a powdered graphite charge. Heat in a medium to a temperature range of 2000-2200℃ and keep at this temperature for 5 minutes.
Hold for ~10 hours. Processing conditions and material thicknesses were selected such that the carbide-forming reaction occurred to form a three-layer carbide structure with the desired composition and thickness ratio. The three-layer cathode structure in this case is based on periodic law 5A.
Obtained by carbonizing group metals in the Me-C phase diagram, i.e. the outer layer in contact with carbon is a monocarbide.
MeCx is formed, where x means the carbon number of the carbide close to the upper limit of 1, while the inner layer transforms into semi-carbide in long-term treatment. The actual reaction rate depends on many parameters and cannot be calculated theoretically with the required accuracy. Therefore, it is necessary to verify the processing conditions and parameters of the product cathode experimentally. When the processing temperature is lower than 2000°C, carbide formation is significantly slowed down, resulting in a significantly longer carbide formation time. Temperatures higher than 2200°C cause defects in the carbide layer that grows with carbide formation, and the product cathode changes shape due to internal stress and plastic deformation. In the production of niobium carbide cathode,
The processing temperature range is maintained at 2000-2100°C, and in the case of tantalum carbide, the processing temperature range is maintained at 2100-2200°C. Since all the conditions for producing a cathode with the required parameters are interrelated, the processing time is an overall factor, the value of which is found experimentally by metallographic analysis. When lowering the processing temperature and reducing the thickness of the inner layer of the product composition MeC 0.5 , the processing time becomes longer. Tantalum and niobium semicarbides have a hexagonal lattice with a very narrow range of homogeneity, and the deformation of the semicarbide composition is
It could not be recognized from the line analysis results. Special conditions of the embodiment of the process of the invention and
Table 1 shows the parameters of the product cathode thus obtained.
【表】
第１表に示すパラメータを有する本発明によつ
て製造した種々な陰極を使用して、密封CO2レー
ザーで試験を行つた。比較の目的で同様な形を有
するコバル金属陰極を使用した密封CO2レーザー
も試験した。試験の結果、本発明によつて製造し
たタンタルまたはニオブの炭化物陰極を使用する
と、密封CO2レーザーの寿命を、コバル陰極500
時間から10000時間以上延すことができる。
同時に単位波長に対する単位放射出力の最大値
を得て、この値を寿命期間を通して実質的に一定
に保つことができる。またこの寿命に制限を与え
るものは陰極の影響によるのではなくて、他の因
子によつて制限されることがわかつた、他の因子
をなくすことができれば、ガスレーザーの寿命を
更に延すに違いない。
このように本発明の製法によつて製造したガス
レーザー陰極の利益はガスレーザーの寿命を数倍
も延すことである。これはCO2レーザーに限るの
ではなくて、陰極のスパツタリングが最も重要な
因子である他の多くのガスレーザー例えばCOレ
ーザー、ヘリウム−ネオンレーザーなどについて
もあてはまる。TABLE Tests were carried out in a sealed CO 2 laser using various cathodes made according to the invention with the parameters shown in Table 1. A sealed CO2 laser using a cobal metal cathode with a similar shape was also tested for comparison purposes. Tests have shown that tantalum or niobium carbide cathodes made in accordance with the present invention extend the lifetime of sealed CO2 lasers to 500
Can be extended from 10000 hours to more than 10000 hours. At the same time, a maximum value of unit radiation power for unit wavelength can be obtained and this value can be kept substantially constant over the lifetime. It has also been found that the lifespan is limited not by the influence of the cathode, but by other factors.If these other factors could be eliminated, the lifespan of gas lasers could be further extended. Must. Thus, the benefit of the gas laser cathode produced by the method of the present invention is that it extends the lifetime of the gas laser by several times. This is not limited to CO 2 lasers, but also applies to many other gas lasers, such as CO lasers, helium-neon lasers, etc., where cathode sputtering is the most important factor.
添付図面は本発明のガスレーザー陰極の長手方
向の断面図である。
１…外層、２…内層。
The accompanying drawing is a longitudinal cross-sectional view of a gas laser cathode according to the invention. 1...outer layer, 2...inner layer.
Claims (1)
ーザー陰極であつて、このスリーブが周期律第
5A族金属の炭化物からなる３層で形成され、２
つの外層の組成がMeC0.8-0.95、内層の組成がセミ
炭化物MeC0.5であるガスレーザー陰極。 ２ 電気伝導放出物質からなるスリーブが周期律
第5A族金属の炭化物からなる３層で形成され、
２つの外層の組成がMeC0.8-0.95、内層の組成がセ
ミ炭化物MeC0.5であるガスレーザー陰極をアル
ゴン雰囲気中で加熱して製造する方法であつて、
タンタルまたはニオブの素材を粉末グラフアイト
装入物中で温度範囲2000〜2200℃に加熱し、この
温度に５〜10時間保持することを特徴とする、ガ
スレーザー陰極の製法。[Scope of Claims] 1. A gas laser cathode having a sleeve made of an electrically conductive emitting material, the sleeve having a structure according to the periodic law.
It is formed of three layers consisting of carbides of group 5A metals, and
A gas laser cathode with an outer layer composition of MeC 0.8-0.95 and an inner layer composition of semi-carbide MeC 0.5 . 2. A sleeve made of an electrically conductive emitting material is formed of three layers made of a carbide of a group 5A metal of the periodic law,
A method for manufacturing a gas laser cathode in which two outer layers have a composition of MeC 0.8-0.95 and an inner layer has a semi-carbide MeC 0.5 composition by heating in an argon atmosphere, the method comprising:
A process for producing a gas laser cathode, characterized in that tantalum or niobium material is heated in a powdered graphite charge to a temperature range of 2000-2200°C and held at this temperature for 5-10 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15244388A JPS6427283A (en) | 1988-06-22 | 1988-06-22 | Gas laser cathode and manufacture of the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15244388A JPS6427283A (en) | 1988-06-22 | 1988-06-22 | Gas laser cathode and manufacture of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6427283A JPS6427283A (en) | 1989-01-30 |
| JPH0150117B2 true JPH0150117B2 (en) | 1989-10-27 |
Family
ID=15540638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15244388A Granted JPS6427283A (en) | 1988-06-22 | 1988-06-22 | Gas laser cathode and manufacture of the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6427283A (en) |
-
1988
- 1988-06-22 JP JP15244388A patent/JPS6427283A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6427283A (en) | 1989-01-30 |
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