JPH0151072B2 - - Google Patents
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- JPH0151072B2 JPH0151072B2 JP55142914A JP14291480A JPH0151072B2 JP H0151072 B2 JPH0151072 B2 JP H0151072B2 JP 55142914 A JP55142914 A JP 55142914A JP 14291480 A JP14291480 A JP 14291480A JP H0151072 B2 JPH0151072 B2 JP H0151072B2
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- grain size
- propagation loss
- piezoelectric
- crystal grain
- surface acoustic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
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- Compositions Of Oxide Ceramics (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
本発明は微細な結晶粒からなるチタン酸鉛系圧
電磁器および、当該磁器を用いた弾性表面波
(SAW)素子に関するものである。
圧電セラミツクスは、電気機械結合係数が大き
く、特性改善が比較的容易であることから、弾性
表面波(SAW)用材料として注目され、PZTを
中心に多くの材料組成が開発されてきた。なかで
もPbTiO3を主成分とする圧電磁器のPbの一部を
La、PrあるいはNd等の希土類元素で、また、Ti
の一部をMnおよびIn、GaあるいはAl元素で置換
した磁器は、SAW遅延時間温度係数が零である
ばかりでなく、電気機械結合係数が大きく、か
つ、誘電率が小さい等の特徴を有する優れた材料
であり、特に高周波用基板材料として有望視され
ている。しかし、一般に圧電磁器の適用周波数領
域は、100MHz程度までであり、100MHz以上の高
周波用材料としては、従来、単結晶や薄膜が対象
とされ、圧電磁器は含まれていない。その理由
は、圧電磁器は周波数が高くなると急激に伝搬損
失が増大するためである。
本発明は上記問題点を解消し、従来不可能であ
ろうと考えられていた高周波領域においても使用
可能な、伝搬損失の小さな圧電磁器、および当該
磁器を用いた弾性表面波素子を提供することを目
的とするものである。
以下、実施例により本発明を詳しく説明する。
実施例 1
まず、PbTiO3系セラミツクスのSAW伝搬損失
の結晶粒径依存性、周波数依存性を検討するため
に結晶粒径の異なる多数の試料を作成し、その結
晶性、誘電特性、圧電特性、およびSAW特性を
測定した。
用いた組成は、PbOが45.6モル%、TiO2が49.4
モル%、Nd2O3が2.9モル%、MnO2が1.1モル%
およびIn2O3が1.0モル%である。この組成からな
るセラミツクスは、SAW遅延時間温度係数が、
1PPm/℃以下であり、かつ、SAW伝搬速度が
約2610m/s、電気機械結合係数が2.2%、誘電
率が220、およびキユリー温度が320℃と極めて特
性に優れた材料である。
上記組成比の原料粉をポツトミルを用い約1時
間湿式混合を行ない、乾燥後、850℃で2時間仮
焼結を行なつた。この仮焼結体をライカイ機を用
いて粉砕し、再びポツトミルを用い混合した。乾
燥後、350Kg/cm2の圧力でプレス成形し、1150℃
〜1300℃の温度範囲で、10分〜20時間焼結した。
結晶粒径は焼結温度、焼結時間により制御した。
焼結後のペレツトサイズは、16φ×2mmtである。
この焼結体を後1mm厚まで研摩し、両面にクロム
一金電極を蒸着して、分極処理を行つた。分極処
理は、5.5×103V/cmの電界を150℃で10分間印加
した。その後、誘電および圧電特性等の測定を行
い。片面を鏡面研摩し、ホトリソグラフイにより
等間隔に4組のAlすだれ状電極を形成した。一
番端のSAW励信用電極にrfパルスを印加し、伝
播距離が異なる残りの各受信電極での信号の減衰
量より伝搬損失を求めた。
第1図に、密度ρ、結晶格子の軸比c/a、誘電
率εT 33および誘電損失tanδの結晶粒径依存性を示
す。密度および軸比は結晶粒径の減少と共にゆる
やかに減少するが、誘電率は逆に増加し、結晶粒
径が0.1μm以下で急激に大きくなる。また、誘電
損失は結晶粒径が0.1μmまで小さくなつてもほと
んど変化せず一定で、結晶粒径が0.1μm以下で増
大する傾向を示す。
第2図に厚み方向振動および径方向振動の電気
機械結合係数KtおよびKp、厚み方向振動および
径方向振動の周波数定数NtおよびNp、径方向振
動での機械的品質係数QMの結晶粒径依存性を示
す。ただし、Kpだけは、結晶粒径が約0.2μmで
最大値を示し、結晶粒径が大きくなると逆に小さ
くなつている。
従来、一般に圧電磁器においては、結晶粒径が
1μm以下になると強誘電性や圧電性が劣化、あ
るいは消滅すると言われて来た。たとえば、
PbTiO3磁器と同じ結晶構造をもつBaTiO3磁器
では、結晶粒径が1μm以下になると、誘電率が
4倍以上に大きくなり、また、強誘電性や圧電性
が消滅する。この原因は、結晶の異方性
(BaTiO3の場合、c−a/a=1%、aおよびcは
格子定数)に起因する内部応力が結晶粒に作用す
るためであると考えられている。
しかしながら、本発明の圧電磁器は、従来の通
説に反し、結晶粒径が1μm以下となつても、0.1μ
mまでは、第1図のごとく誘電率は極端に大きく
ならず、かつ、第2図のごとく、圧電特性も特に
劣化していない。
次に、SAW伝搬損失の測定結果について述べ
る。
第3図に、測定周波数をパラメータとして、
SAW伝搬損失の結晶粒径依存性を示す。第3図
において、SAW伝搬損失αは、結晶粒径Dの変
化に対し、下に凸の曲線的変化を示している。
SAW伝搬損失が比較的小さい領域は、低周波
(たとえば60MHz)では0.1〜5μm程度であり、高
周波(たとえば630MHz)では、0.1〜1μm程度で
ある。高周波用材料として考えるとき、最適な結
晶粒径は0.1〜1μmと判定可能である。
第4図に、結晶粒径Dをパラメータとして、
SAW伝搬損失の周波数依存性を示す。D=0.2、
0.9μmとしたときの伝搬損失は、D>1μm(たと
えば、D=5μm)およびD<0.1μm(たとえばD
=0.07μm)としたときの伝搬損失に比べ明らか
に小さいことが判る。また、第4図中に破線で示
した特性は、これまで報告されている圧電セラミ
ツクスの中で最低の伝搬損失を示すといわれてい
るPZT系セラミツクスの特性である。
D=0.2、0.9μmの結晶粒径を有する本PbTiO3
系セラミツクスは、従来のPZT系セラミツクス
の伝搬損失の約4分の1程度(同一周波数での
dB値比較)と、明らかに小さいことは、明白で
ある。
さて、ここで、上述の第3図、第4図の特性変
化に対し、やや詳しく説明しておく。
第3図において、D≧1μmでの特性を最小自
乗法を用いて検討した結果、本PbTiO3系セラミ
ツクスでは伝搬損失α(dB/cm)は結晶粒径D
(cm)、周波数f(MHz)と、ほゞ
D1×10-3f2+3×103D3f4 (1)
なる関係で結ばれていることが判つた。
(1)式の第1項はセラミツクスの内部摩擦に起因
する損失であり、第2項は結晶粒による散乱損失
である。(1)式に依れば、結晶粒径Dが小さく、第
2項が第1項に対して無視できる領域では、
SAW伝搬損失は、セラミツクスの内部摩擦その
ものと考えて良いことになる。したがつて、第3
図のD<1μm、特にD<0.1μmの範囲で、Dが減
少するに従い、伝播損失が増大している原因は、
内部摩擦の増大であることが推定され、これは、
前述の第2図に示した、圧電特性の0.1μm近傍以
下での特性劣化と対応するものと考えられる。
一方、(1)式の第1項が、第2項に比べ無視でき
る領域では、SAW伝搬損失はほとんど結晶粒径
による散乱損失のみとなる。第4図において、D
=5μmの伝搬損失がD<1μmの伝搬損失に比べ、
f≧100MHz以上の周波数領域で明らかに大きく
なつているのは、このためと考えられる。
実施例 2
実施例1で示した圧電セラミツクスとしては、
SAW伝搬損失が、従事のものに比べ極めて小さ
い試料を用いて、高周波フイルタを試作し、その
フイルタ特性を評価した。
試料としては、実施例1で得られたD0.5μm
のPbTiO3系セラミツクスを用いた。
電極パターンには、入出力電極とも、電極幅、
ピツチ、交差幅が一定の正規型電極を用いた。設
定中心周波数は130、260、325、500MHzの4種で
ある。電極パターンの主要寸法を第1表に示す。
電極パターン設計は、まず、電極幅、ピツチ電極
対数を定め、次に50Ω測定系における不整合損失
(ミスマツチロス)が最低となるよう交差幅を定
めた。
得られた素子の振幅周波数特性の代表例を第5
図および第6図に示す。第5図および第6図は、
中心周波数がそれぞれ260MHzおよび500MHzにな
るように設計した素子に対応した特性であり、挿
入損失が約20dBの極めて良好なフイルター特性
を示している。なお素子特性の概要を第2表にま
とめて示す。また、これらのフイルターの中心周
波数の温度変化は、約5PPm/℃であり零より若
干大きな値となつた。
以上、実施例1、2として、PbO、TiO2、
Nd2O3、In2O3からなる磁器組成物の材料特性お
よび弾性表面波特性についてのみ示したが、Nd
のかわりに、Pr、Sm、Gd等の希土類元素の少な
くとも1元素、Inのかわりに、Al、Gaで置換し
た試料においても、ほゞ同様の特性を得ることが
できた。これらの材料の組成は圧電磁器として周
知のものでよい。
The present invention relates to a lead titanate-based piezoelectric ceramic made of fine crystal grains and a surface acoustic wave (SAW) element using the ceramic. Piezoelectric ceramics have a large electromechanical coupling coefficient and are relatively easy to improve, so they have attracted attention as materials for surface acoustic waves (SAW), and many material compositions have been developed, including PZT. Among them, some of the Pb in piezoelectric ceramics whose main component is PbTiO 3 is
Rare earth elements such as La, Pr or Nd, and Ti
Porcelain in which some of the elements are replaced with Mn, In, Ga, or Al elements not only have a zero SAW delay time temperature coefficient, but also have excellent characteristics such as a large electromechanical coupling coefficient and a small dielectric constant. This material is particularly promising as a high-frequency substrate material. However, the applicable frequency range of piezoelectric ceramics is generally up to about 100 MHz, and materials for high frequencies of 100 MHz or higher have conventionally been targeted at single crystals and thin films, and piezoelectric ceramics have not been included. The reason is that the propagation loss of piezoelectric ceramics increases rapidly as the frequency increases. The present invention solves the above-mentioned problems and provides a piezoelectric ceramic with small propagation loss that can be used even in a high frequency range, which was previously thought to be impossible, and a surface acoustic wave element using the ceramic. This is the purpose. Hereinafter, the present invention will be explained in detail with reference to Examples. Example 1 First, in order to study the crystal grain size dependence and frequency dependence of the SAW propagation loss of PbTiO 3 -based ceramics, a number of samples with different crystal grain sizes were prepared, and their crystallinity, dielectric properties, piezoelectric properties, and SAW characteristics were measured. The composition used was 45.6 mol% PbO and 49.4 mol% TiO2.
Mol%, 2.9 mol% Nd2O3 , 1.1 mol% MnO2
and In 2 O 3 is 1.0 mol %. Ceramics with this composition have a SAW delay time temperature coefficient of
It is a material with extremely excellent properties, with a SAW propagation speed of approximately 2610 m/s, an electromechanical coupling coefficient of 2.2%, a dielectric constant of 220, and a Curie temperature of 320°C. The raw material powders having the above composition ratio were wet-mixed for about 1 hour using a pot mill, and after drying, they were pre-sintered at 850°C for 2 hours. This pre-sintered body was pulverized using a Raikai machine and mixed again using a pot mill. After drying, press molding at a pressure of 350Kg/cm 2 and 1150℃
Sintered at a temperature range of ~1300°C for 10 minutes to 20 hours.
The grain size was controlled by sintering temperature and sintering time.
The pellet size after sintering is 16φ× 2mmt .
This sintered body was then polished to a thickness of 1 mm, chromium-gold electrodes were deposited on both sides, and polarization treatment was performed. In the polarization treatment, an electric field of 5.5×10 3 V/cm was applied at 150° C. for 10 minutes. Afterwards, we measured dielectric and piezoelectric properties. One side was mirror polished, and four sets of Al interdigital electrodes were formed at equal intervals by photolithography. An RF pulse was applied to the SAW excitation electrode at the end, and the propagation loss was determined from the amount of signal attenuation at each of the remaining receiving electrodes, which had different propagation distances. FIG. 1 shows the dependence of the density ρ, the axial ratio c/a of the crystal lattice, the dielectric constant ε T 33 and the dielectric loss tan δ on the crystal grain size. The density and axial ratio gradually decrease as the crystal grain size decreases, but the dielectric constant increases, and sharply increases when the crystal grain size is 0.1 μm or less. Further, the dielectric loss remains constant and hardly changes even when the crystal grain size is reduced to 0.1 μm, and shows a tendency to increase when the crystal grain size is 0.1 μm or less. Figure 2 shows the electromechanical coupling coefficients K t and K p for thickness direction vibration and radial direction vibration, frequency constants N t and N p for thickness direction vibration and radial direction vibration, and mechanical quality factor Q M for radial direction vibration. Shows grain size dependence. However, only K p shows a maximum value when the crystal grain size is approximately 0.2 μm, and conversely decreases as the crystal grain size increases. Conventionally, in piezoelectric ceramics, the crystal grain size is generally
It has been said that when the thickness becomes less than 1 μm, ferroelectricity and piezoelectricity deteriorate or disappear. for example,
In BaTiO 3 porcelain, which has the same crystal structure as PbTiO 3 porcelain, when the crystal grain size becomes 1 μm or less, the dielectric constant increases by more than four times, and ferroelectricity and piezoelectricity disappear. The cause of this is thought to be that internal stress due to crystal anisotropy (in the case of BaTiO 3 , c-a/a = 1%, a and c are lattice constants) acts on the crystal grains. . However, contrary to conventional wisdom, the piezoelectric ceramic of the present invention has a crystal grain size of 0.1 μm or less even if the crystal grain size is 1 μm or less.
Up to m, the dielectric constant does not become extremely large as shown in FIG. 1, and the piezoelectric properties do not particularly deteriorate as shown in FIG. Next, we will discuss the measurement results of SAW propagation loss. Figure 3 shows the measurement frequency as a parameter.
The dependence of SAW propagation loss on grain size is shown. In FIG. 3, the SAW propagation loss α shows a curved downward convex change with respect to a change in the crystal grain size D.
The region where the SAW propagation loss is relatively small is about 0.1 to 5 μm at low frequencies (for example, 60 MHz), and about 0.1 to 1 μm at high frequencies (for example, 630 MHz). When considered as a high frequency material, the optimum crystal grain size can be determined to be 0.1 to 1 μm. In Figure 4, with the grain size D as a parameter,
This shows the frequency dependence of SAW propagation loss. D=0.2,
The propagation loss when 0.9 μm is D>1 μm (for example, D=5 μm) and D<0.1 μm (for example, D
It can be seen that the propagation loss is clearly smaller than the propagation loss when the value is 0.07 μm). Furthermore, the characteristics indicated by the broken line in FIG. 4 are those of PZT ceramics, which is said to exhibit the lowest propagation loss among the piezoelectric ceramics reported so far. D = 0.2, this PbTiO 3 with a grain size of 0.9 μm
The propagation loss of PZT-based ceramics is about one-fourth of that of conventional PZT-based ceramics (at the same frequency).
dB value comparison), it is obvious that it is clearly small. Now, the characteristic changes shown in FIGS. 3 and 4 described above will be explained in some detail. In Figure 3, as a result of examining the characteristics when D≧1μm using the least squares method, the propagation loss α (dB/cm) of this PbTiO 3 ceramic is
(cm) and frequency f (MHz), it was found that the relationship is approximately D1×10 −3 f 2 +3×10 3 D 3 f 4 (1). The first term in equation (1) is loss due to internal friction of ceramics, and the second term is scattering loss due to crystal grains. According to equation (1), in a region where the grain size D is small and the second term can be ignored with respect to the first term,
SAW propagation loss can be thought of as the internal friction of ceramics itself. Therefore, the third
The reason why the propagation loss increases as D decreases in the range of D < 1 μm, especially D < 0.1 μm, is as follows.
It is estimated that this is due to an increase in internal friction, which is
It is thought that this corresponds to the deterioration of the piezoelectric characteristics in the vicinity of 0.1 μm or less, as shown in FIG. 2 described above. On the other hand, in a region where the first term of equation (1) can be ignored compared to the second term, the SAW propagation loss is almost solely due to scattering loss due to the crystal grain size. In Figure 4, D
=5μm propagation loss compared to D<1μm propagation loss,
This is considered to be the reason why it becomes clearly large in the frequency region of f≧100 MHz or higher. Example 2 The piezoelectric ceramics shown in Example 1 are as follows:
We fabricated a prototype high-frequency filter using a sample whose SAW propagation loss was extremely small compared to that of the sample used, and evaluated its filter characteristics. As a sample, D0.5μm obtained in Example 1
PbTiO 3 ceramics were used. The electrode pattern includes electrode width,
Regular electrodes with constant pitch and intersection width were used. There are four set center frequencies: 130, 260, 325, and 500MHz. The main dimensions of the electrode pattern are shown in Table 1.
In designing the electrode pattern, we first determined the electrode width and the number of pitch electrode pairs, and then determined the intersection width to minimize mismatch loss in the 50Ω measurement system. A typical example of the amplitude frequency characteristics of the obtained element is shown in the fifth section.
As shown in FIG. Figures 5 and 6 are
These characteristics correspond to elements designed to have center frequencies of 260 MHz and 500 MHz, respectively, and exhibit extremely good filter characteristics with an insertion loss of approximately 20 dB. A summary of the device characteristics is summarized in Table 2. Furthermore, the temperature change in the center frequency of these filters was approximately 5PPm/°C, which was slightly larger than zero. As mentioned above, as Examples 1 and 2, PbO, TiO 2 ,
Although only the material properties and surface acoustic wave properties of the ceramic composition consisting of Nd 2 O 3 and In 2 O 3 are shown, Nd
Instead, almost similar characteristics could be obtained in samples in which at least one rare earth element such as Pr, Sm, or Gd, or In was replaced with Al or Ga. The composition of these materials may be those known as piezoelectric ceramics.
【表】【table】
【表】【table】
【表】
以上のごとく、本発明の結晶粒径が0.1μm〜1μ
mの範囲にあるPbTiO3系セラミツクスは、SAW
伝播損失が従来のものに比べ小さく、かつ低誘電
率で、温度安定性に優れた材料であり、これを用
いた弾性表面波素子は、高周波領域でも、挿入損
失が20dB程度と小さく、優れた温度特性を示す
素子であることは明らかである。[Table] As shown above, the crystal grain size of the present invention is 0.1 μm to 1 μm.
PbTiO 3 ceramics in the range of SAW
It is a material that has lower propagation loss than conventional materials, has a low dielectric constant, and has excellent temperature stability.Surface acoustic wave elements using this material have a low insertion loss of about 20 dB even in the high frequency range, and have excellent performance. It is clear that the device exhibits temperature characteristics.
第1図は、本発明の圧電セラミツクスの結晶学
的特性および誘電的特性の結晶粒径依存性、第2
図は、圧電特性の結晶粒径依存性、第3図は、
SAW伝搬損失の結晶粒径依存性、第4図は、
PZT系セラミツクスの伝搬損失と比較した、本
発明のセラミツクスの伝搬損失の周波数依存性、
第5図および第6図は得られた高周波フイルタの
振幅特性の代表例を示す図である。
Figure 1 shows the crystal grain size dependence of the crystallographic properties and dielectric properties of the piezoelectric ceramic of the present invention, and the second
The figure shows the dependence of piezoelectric properties on crystal grain size.
The grain size dependence of SAW propagation loss, Figure 4, is
The frequency dependence of the propagation loss of the ceramics of the present invention compared to the propagation loss of PZT-based ceramics,
FIGS. 5 and 6 are diagrams showing representative examples of the amplitude characteristics of the obtained high frequency filter.
Claims (1)
径の結晶粒からなる圧電磁器組成物。 2 PbTiO3を主成分とし、Pbの一部をPr、Nd、
Sm、およびGdからなる群より選択した少なくと
も1元素で置換し、且つTiの一部をMn、In、Al
およびGaからなる群より選択した少なくとも1
元素で置換した組成を有する特許請求の範囲第1
項記載の圧電磁器組成物。 3 圧電基板上に、電気信号と弾性表面波信号の
交換機能を持つ金属電極を少なくとも1個附着さ
せた弾性表面波素子において、該圧電基板として
PbTiO3を主成分とし、且つ0.1〜1.0μmの粒径の
結晶粒からなる圧電磁器組成物を用いた弾性表面
波素子。 4 前記圧電基板として、PbTiO3を主成分と
し、Pbの一部をPr、Nd、SmおよびGdからなる
群より選択した少なくとも1元素で置換し、且つ
Tiの一部をMn、In、AlおよびGaからなる群よ
り選択した少なくとも1元素で置換した組成を有
する圧電磁器組成物を用いた特許請求の範囲第3
項記載の弾性表面波素子。[Claims] 1. A piezoelectric ceramic composition containing PbTiO 3 as a main component and comprising crystal grains with a grain size of 0.1 to 1.0 μm. 2 The main component is PbTiO3 , and some of the Pb is Pr, Nd,
At least one element selected from the group consisting of Sm, and Gd is substituted, and a part of Ti is replaced with Mn, In, and Al.
and at least one selected from the group consisting of Ga
Claim 1 having a composition substituted with an element
The piezoelectric ceramic composition described in . 3. In a surface acoustic wave element in which at least one metal electrode having a function of exchanging electric signals and surface acoustic wave signals is attached on a piezoelectric substrate, as the piezoelectric substrate
A surface acoustic wave device using a piezoelectric ceramic composition containing PbTiO 3 as a main component and having crystal grains with a grain size of 0.1 to 1.0 μm. 4 The piezoelectric substrate has PbTiO 3 as a main component, and a part of Pb is replaced with at least one element selected from the group consisting of Pr, Nd, Sm and Gd, and
Claim 3 using a piezoelectric ceramic composition having a composition in which a part of Ti is replaced with at least one element selected from the group consisting of Mn, In, Al, and Ga.
The surface acoustic wave device described in .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142914A JPS5768091A (en) | 1980-10-15 | 1980-10-15 | Piezoelectric porcelain composition and surface acoustic wave element utilizing it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55142914A JPS5768091A (en) | 1980-10-15 | 1980-10-15 | Piezoelectric porcelain composition and surface acoustic wave element utilizing it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5768091A JPS5768091A (en) | 1982-04-26 |
| JPH0151072B2 true JPH0151072B2 (en) | 1989-11-01 |
Family
ID=15326549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55142914A Granted JPS5768091A (en) | 1980-10-15 | 1980-10-15 | Piezoelectric porcelain composition and surface acoustic wave element utilizing it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5768091A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06238888A (en) * | 1993-02-22 | 1994-08-30 | Brother Ind Ltd | Ink jet device |
| JP3598874B2 (en) * | 1998-05-27 | 2004-12-08 | 株式会社村田製作所 | Piezoelectric ceramic composition and piezoelectric element using this piezoelectric ceramic composition |
| KR20010029246A (en) * | 1999-09-30 | 2001-04-06 | 강상훈 | Piezoelectric ceramic composition |
| CN103086713B (en) * | 2013-03-04 | 2015-03-04 | 江苏大学 | Near-zero-temperature coefficient piezoelectric ceramic for surface acoustic waves and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54142597A (en) * | 1978-04-28 | 1979-11-06 | Hitachi Ltd | Piezo-electric porcelain composite |
-
1980
- 1980-10-15 JP JP55142914A patent/JPS5768091A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5768091A (en) | 1982-04-26 |
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