JPH0162359U - - Google Patents
Info
- Publication number
- JPH0162359U JPH0162359U JP15635087U JP15635087U JPH0162359U JP H0162359 U JPH0162359 U JP H0162359U JP 15635087 U JP15635087 U JP 15635087U JP 15635087 U JP15635087 U JP 15635087U JP H0162359 U JPH0162359 U JP H0162359U
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- electrode
- wafer
- heating
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims 2
- 239000012530 fluid Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
Description
図面は本考案装置の一実施例を示す構成説明図
である。
１…反応室、２…被処理ウエーハ、３…ウエー
ハ載置電極、４…高周波電源、６…接地電極、７
…ガス導入口、８…排気口、９…加熱ランプ、１
０…石英窓、１１…反射鏡、１２…加熱装置。
The drawing is a configuration explanatory diagram showing one embodiment of the device of the present invention. DESCRIPTION OF SYMBOLS 1... Reaction chamber, 2... Wafer to be processed, 3... Wafer mounting electrode, 4... High frequency power supply, 6... Ground electrode, 7
...Gas inlet, 8...Exhaust port, 9...Heating lamp, 1
0...Quartz window, 11...Reflector, 12...Heating device.
Claims (1)
ハ載置電極３を設け、このウエーハ載置電極３と
接地電極６との間に高周波電源４を接続し、ウエ
ーハ載置電極３に載置された被処理ウエーハ２を
加熱する加熱装置１２を設けると共に、反応室１
にフレオン系ガス供給源に接続されたガス導入口
７と排気装置に接続された排気口８を設けてなる
プラズマ・加熱処理装置。 (2) 反応室１を金属製とし、この反応室１に接
地電極６を兼ねさせた実用新案登録請求の範囲第
１項記載のプラズマ・加熱処理装置。 (3) 加熱装置１２はウエーハ載置電極３に対向
する反応室１の部分を石英窓１０とし、この石英
窓１０の外側に設けられた加熱ランプ９と反射鏡
１１とよりなる実用新案登録請求の範囲第１項記
載のプラズマ・加熱処理装置。 (4) 加熱装置１２はウエーハ載置電極３内に設
けられたヒータまたはジヤケツトに外部より循環
させる加熱流体である実用新案登録請求の範囲第
１項、第２項のいずれかに記載されたプラズマ・
加熱処理装置。[Claims for Utility Model Registration] (1) A wafer placement electrode 3 paired with a ground electrode 6 is provided in the reaction chamber 1, and a high frequency power source 4 is connected between the wafer placement electrode 3 and the ground electrode 6. A heating device 12 for heating the wafer to be processed 2 placed on the wafer placement electrode 3 is provided, and a reaction chamber 1 is also provided.
A plasma/heat processing apparatus is provided with a gas inlet 7 connected to a Freon gas supply source and an exhaust port 8 connected to an exhaust device. (2) The plasma/heat treatment apparatus according to claim 1, wherein the reaction chamber 1 is made of metal, and the reaction chamber 1 also serves as a ground electrode 6. (3) The heating device 12 has a quartz window 10 in the part of the reaction chamber 1 facing the wafer mounting electrode 3, and a heating lamp 9 and a reflecting mirror 11 are provided outside the quartz window 10.Request for Utility Model Registration The plasma/heat treatment apparatus according to item 1. (4) The heating device 12 is a heater provided in the wafer mounting electrode 3 or a heating fluid that is circulated from the outside to the jacket.・
Heat treatment equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15635087U JPH0162359U (en) | 1987-10-13 | 1987-10-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15635087U JPH0162359U (en) | 1987-10-13 | 1987-10-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0162359U true JPH0162359U (en) | 1989-04-20 |
Family
ID=31434814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15635087U Pending JPH0162359U (en) | 1987-10-13 | 1987-10-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0162359U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS559948A (en) * | 1978-07-07 | 1980-01-24 | Fuji Sash Kogyo Kk | Vertically mobile window |
| JPS5753939A (en) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Dry etching method for thin film |
-
1987
- 1987-10-13 JP JP15635087U patent/JPH0162359U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS559948A (en) * | 1978-07-07 | 1980-01-24 | Fuji Sash Kogyo Kk | Vertically mobile window |
| JPS5753939A (en) * | 1980-09-17 | 1982-03-31 | Matsushita Electric Ind Co Ltd | Dry etching method for thin film |
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