JPH0165150U - - Google Patents

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Publication number
JPH0165150U
JPH0165150U JP1987160134U JP16013487U JPH0165150U JP H0165150 U JPH0165150 U JP H0165150U JP 1987160134 U JP1987160134 U JP 1987160134U JP 16013487 U JP16013487 U JP 16013487U JP H0165150 U JPH0165150 U JP H0165150U
Authority
JP
Japan
Prior art keywords
semiconductor integrated
integrated circuit
separation region
unit
unit block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1987160134U
Other languages
Japanese (ja)
Other versions
JPH0610698Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987160134U priority Critical patent/JPH0610698Y2/en
Publication of JPH0165150U publication Critical patent/JPH0165150U/ja
Application granted granted Critical
Publication of JPH0610698Y2 publication Critical patent/JPH0610698Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

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  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案を説明する為の平面図、第２図
は従来例を説明する為の平面図である。 １１はＰ＋型分離領域、１２はアイランド、１
３はインジエクタ領域、１７は接地電極である。 FIG. 1 is a plan view for explaining the present invention, and FIG. 2 is a plan view for explaining a conventional example. 11 is a P + type isolation region, 12 is an island, 1
3 is an injector region, and 17 is a ground electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] １本のインジエクタ領域に対し多数個のインバ
ータトランジスタを形成して単位ブロツクを構成
し、該単位ブロツクを複数個並設した半導体集積
回路において、前記単位ブロツクの間に分離領域
を設けて前記単位ブロツクを夫々単独アイランド
に形成し、前記分離領域表面に接地電極を配設し
たことを特徴とする半導体集積回路。 In a semiconductor integrated circuit in which a plurality of inverter transistors are formed in one injector region to constitute a unit block, and a plurality of unit blocks are arranged in parallel, a separation region is provided between the unit blocks to form a unit block. 1. A semiconductor integrated circuit, characterized in that each of the semiconductor integrated circuits is formed as an individual island, and a ground electrode is provided on the surface of the separation region.
JP1987160134U 1987-10-20 1987-10-20 Semiconductor integrated circuit Expired - Lifetime JPH0610698Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987160134U JPH0610698Y2 (en) 1987-10-20 1987-10-20 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987160134U JPH0610698Y2 (en) 1987-10-20 1987-10-20 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPH0165150U true JPH0165150U (en) 1989-04-26
JPH0610698Y2 JPH0610698Y2 (en) 1994-03-16

Family

ID=31441935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987160134U Expired - Lifetime JPH0610698Y2 (en) 1987-10-20 1987-10-20 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH0610698Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0412530A (en) * 1990-05-02 1992-01-17 Matsushita Electron Corp Semiconductor integrated circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160134A (en) * 1984-12-29 1986-07-19 Hitachi Ltd Exponential underflow detection circuit
JPS61214558A (en) * 1985-03-20 1986-09-24 Hitachi Ltd semiconductor equipment

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160134A (en) * 1984-12-29 1986-07-19 Hitachi Ltd Exponential underflow detection circuit
JPS61214558A (en) * 1985-03-20 1986-09-24 Hitachi Ltd semiconductor equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0412530A (en) * 1990-05-02 1992-01-17 Matsushita Electron Corp Semiconductor integrated circuit

Also Published As

Publication number Publication date
JPH0610698Y2 (en) 1994-03-16

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