JPH0176027U - - Google Patents
Info
- Publication number
- JPH0176027U JPH0176027U JP1987170549U JP17054987U JPH0176027U JP H0176027 U JPH0176027 U JP H0176027U JP 1987170549 U JP1987170549 U JP 1987170549U JP 17054987 U JP17054987 U JP 17054987U JP H0176027 U JPH0176027 U JP H0176027U
- Authority
- JP
- Japan
- Prior art keywords
- sample chamber
- chamber
- plasma
- ecr
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Description
図面は、本考案の一実施例を示す概略的な構成
説明図である。
１…試料室、２…ロード室、３…アンロード室
、４…プラズマ室、５…プラズマ引出窓、６…Ｅ
ＣＲ―ＣＶＤ手段、７…石英窓、８…導波管、９
…原料ガス導入系路、１０…電磁コイル、１１…
シヤツタ、１２…反応性ガス導入系路、１３，１
４…ゲート弁、Ａ…基板、ａ…下面（成膜面）。
The drawings are schematic configuration explanatory diagrams showing one embodiment of the present invention. 1...Sample chamber, 2...Loading chamber, 3...Unloading chamber, 4...Plasma chamber, 5...Plasma drawer window, 6...E
CR-CVD means, 7...quartz window, 8...waveguide, 9
... Raw material gas introduction line, 10... Electromagnetic coil, 11...
Shutter, 12... Reactive gas introduction line, 13, 1
4... Gate valve, A... Substrate, a... Bottom surface (film formation surface).
Claims (1)
によつてプラズマ室に生成させたプラズマを、発
散磁界の作用を利用して試料室に引出し、該試料
室内に配置した基板上に薄膜を形成するようにし
たＥＣＲ―ＣＶＤ手段を具備してなるものであつ
て、このＥＣＲ―ＣＶＤ手段が、前記プラズマ室
を前記試料室の下部に連接されてなり、前記基板
の下面側をその成膜対象となしていることを特徴
とするインライン式成膜装置。 An ECR in which plasma generated in a plasma chamber by microwave discharge due to electron cyclotron resonance is extracted into a sample chamber using the action of a divergent magnetic field, and a thin film is formed on a substrate placed within the sample chamber. The ECR-CVD means is equipped with a CVD means, in which the plasma chamber is connected to the lower part of the sample chamber, and the film is formed on the lower surface of the substrate. Characteristic in-line film deposition equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987170549U JPH0176027U (en) | 1987-11-08 | 1987-11-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1987170549U JPH0176027U (en) | 1987-11-08 | 1987-11-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0176027U true JPH0176027U (en) | 1989-05-23 |
Family
ID=31461595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1987170549U Pending JPH0176027U (en) | 1987-11-08 | 1987-11-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0176027U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59100516A (en) * | 1982-11-12 | 1984-06-09 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Apparatus and assembly for producing photocell element |
| JPS62131513A (en) * | 1985-12-04 | 1987-06-13 | Hitachi Ltd | Multi-chamber separation type plasma CVD equipment |
-
1987
- 1987-11-08 JP JP1987170549U patent/JPH0176027U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59100516A (en) * | 1982-11-12 | 1984-06-09 | エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド | Apparatus and assembly for producing photocell element |
| JPS62131513A (en) * | 1985-12-04 | 1987-06-13 | Hitachi Ltd | Multi-chamber separation type plasma CVD equipment |
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